CN104946152B - 切割薄膜、切割/芯片接合薄膜及半导体装置的制造方法 - Google Patents

切割薄膜、切割/芯片接合薄膜及半导体装置的制造方法 Download PDF

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Publication number
CN104946152B
CN104946152B CN201510148818.2A CN201510148818A CN104946152B CN 104946152 B CN104946152 B CN 104946152B CN 201510148818 A CN201510148818 A CN 201510148818A CN 104946152 B CN104946152 B CN 104946152B
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China
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die
film
dicing
bonding film
bonding
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Chinese (zh)
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CN104946152A (zh
Inventor
木村雄大
三隅贞仁
村田修平
大西谦司
宍户雄一郎
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Nitto Denko Corp
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Nitto Denko Corp
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/50—Working by transmitting the laser beam through or within the workpiece
    • B23K26/53—Working by transmitting the laser beam through or within the workpiece for modifying or reforming the material inside the workpiece, e.g. for producing break initiation cracks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/52—Mounting semiconductor bodies in containers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
    • H01L2221/68336—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding involving stretching of the auxiliary support post dicing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Optics & Photonics (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Oil, Petroleum & Natural Gas (AREA)
  • Chemical & Material Sciences (AREA)
  • Plasma & Fusion (AREA)
  • Mechanical Engineering (AREA)
  • Dicing (AREA)
  • Adhesive Tapes (AREA)
  • Laser Beam Processing (AREA)
  • Adhesives Or Adhesive Processes (AREA)
  • Die Bonding (AREA)
CN201510148818.2A 2014-03-31 2015-03-31 切割薄膜、切割/芯片接合薄膜及半导体装置的制造方法 Active CN104946152B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2014-074017 2014-03-31
JP2014074017A JP6312498B2 (ja) 2014-03-31 2014-03-31 ダイシングフィルム、ダイシング・ダイボンドフィルム及び半導体装置の製造方法

Publications (2)

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CN104946152A CN104946152A (zh) 2015-09-30
CN104946152B true CN104946152B (zh) 2022-10-21

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Country Link
JP (1) JP6312498B2 (ko)
KR (2) KR102386082B1 (ko)
CN (1) CN104946152B (ko)
TW (1) TWI660436B (ko)

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JP6574685B2 (ja) * 2015-11-12 2019-09-11 日東電工株式会社 ダイシング・ダイボンドフィルム及び半導体装置の製造方法
JP6577341B2 (ja) * 2015-11-13 2019-09-18 日東電工株式会社 積層体および半導体装置の製造方法
JP6662074B2 (ja) * 2016-02-05 2020-03-11 日立化成株式会社 接着フィルム
CN107227123A (zh) * 2016-03-24 2017-10-03 日东电工株式会社 切割芯片接合薄膜及半导体装置的制造方法
JP2017183705A (ja) * 2016-03-24 2017-10-05 日東電工株式会社 ダイシングダイボンドフィルム、及び、半導体装置の製造方法
CN106206397B (zh) * 2016-08-05 2020-02-07 厦门市三安光电科技有限公司 用于半导体器件的薄膜及半导体器件的制作方法
KR102383560B1 (ko) * 2016-10-28 2022-04-08 가부시키가이샤 도교 세이미쓰 워크 분할 장치 및 워크 분할 방법
JP6980680B2 (ja) * 2016-11-02 2021-12-15 リンテック株式会社 ステルスダイシング用粘着シート
JP6877982B2 (ja) * 2016-12-08 2021-05-26 日東電工株式会社 接着フィルム、ダイシング・ダイボンドフィルム、半導体装置の製造方法及び半導体装置
KR20180116755A (ko) * 2017-04-17 2018-10-25 닛토덴코 가부시키가이샤 다이싱 다이 본드 필름
JP7017334B2 (ja) * 2017-04-17 2022-02-08 日東電工株式会社 ダイシングダイボンドフィルム
JP2019197784A (ja) * 2018-05-08 2019-11-14 株式会社ディスコ レーザー加工装置
KR20210107031A (ko) * 2018-12-28 2021-08-31 쇼와덴코머티리얼즈가부시끼가이샤 광경화성 점착제의 평가 방법, 다이싱·다이본딩 일체형 필름과 그 제조 방법, 및 반도체 장치의 제조 방법
JP6835296B1 (ja) * 2019-05-10 2021-02-24 昭和電工マテリアルズ株式会社 ピックアップ性の評価方法、ダイシング・ダイボンディング一体型フィルム、ダイシング・ダイボンディング一体型フィルムの評価方法及び選別方法、並びに半導体装置の製造方法

Citations (5)

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JP2009049400A (ja) * 2007-07-25 2009-03-05 Nitto Denko Corp 熱硬化型ダイボンドフィルム
CN102010677A (zh) * 2009-09-07 2011-04-13 日东电工株式会社 热固型芯片接合薄膜、切割/芯片接合薄膜及半导体装置
JP2011171588A (ja) * 2010-02-19 2011-09-01 Nitto Denko Corp ダイシング・ダイボンドフィルム
JP2012142368A (ja) * 2010-12-28 2012-07-26 Nitto Denko Corp ダイシング・ダイボンドフィルム及び半導体素子
JP2013038098A (ja) * 2011-08-03 2013-02-21 Nitto Denko Corp ダイシング・ダイボンドフィルム

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JP4358502B2 (ja) 2002-03-12 2009-11-04 浜松ホトニクス株式会社 半導体基板の切断方法
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CN102010677A (zh) * 2009-09-07 2011-04-13 日东电工株式会社 热固型芯片接合薄膜、切割/芯片接合薄膜及半导体装置
JP2011171588A (ja) * 2010-02-19 2011-09-01 Nitto Denko Corp ダイシング・ダイボンドフィルム
JP2012142368A (ja) * 2010-12-28 2012-07-26 Nitto Denko Corp ダイシング・ダイボンドフィルム及び半導体素子
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Also Published As

Publication number Publication date
JP2015198118A (ja) 2015-11-09
CN104946152A (zh) 2015-09-30
TW201539586A (zh) 2015-10-16
KR20150113878A (ko) 2015-10-08
TWI660436B (zh) 2019-05-21
KR20220050110A (ko) 2022-04-22
KR102493750B1 (ko) 2023-02-06
JP6312498B2 (ja) 2018-04-18
KR102386082B1 (ko) 2022-04-14

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