JP6312498B2 - ダイシングフィルム、ダイシング・ダイボンドフィルム及び半導体装置の製造方法 - Google Patents

ダイシングフィルム、ダイシング・ダイボンドフィルム及び半導体装置の製造方法 Download PDF

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Publication number
JP6312498B2
JP6312498B2 JP2014074017A JP2014074017A JP6312498B2 JP 6312498 B2 JP6312498 B2 JP 6312498B2 JP 2014074017 A JP2014074017 A JP 2014074017A JP 2014074017 A JP2014074017 A JP 2014074017A JP 6312498 B2 JP6312498 B2 JP 6312498B2
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JP
Japan
Prior art keywords
film
dicing
die
bonding film
bonding
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2014074017A
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English (en)
Japanese (ja)
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JP2015198118A (ja
Inventor
木村　雄大
雄大 木村
三隅　貞仁
貞仁 三隅
村田　修平
修平 村田
謙司 大西
謙司 大西
雄一郎 宍戸
雄一郎 宍戸
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nitto Denko Corp
Original Assignee
Nitto Denko Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nitto Denko Corp filed Critical Nitto Denko Corp
Priority to JP2014074017A priority Critical patent/JP6312498B2/ja
Priority to TW104109052A priority patent/TWI660436B/zh
Priority to KR1020150042298A priority patent/KR102386082B1/ko
Priority to CN201510148818.2A priority patent/CN104946152B/zh
Publication of JP2015198118A publication Critical patent/JP2015198118A/ja
Application granted granted Critical
Publication of JP6312498B2 publication Critical patent/JP6312498B2/ja
Priority to KR1020220043723A priority patent/KR102493750B1/ko
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/50—Working by transmitting the laser beam through or within the workpiece
    • B23K26/53—Working by transmitting the laser beam through or within the workpiece for modifying or reforming the material inside the workpiece, e.g. for producing break initiation cracks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/52—Mounting semiconductor bodies in containers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
    • H01L2221/68336—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding involving stretching of the auxiliary support post dicing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Oil, Petroleum & Natural Gas (AREA)
  • Mechanical Engineering (AREA)
  • Plasma & Fusion (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Chemical & Material Sciences (AREA)
  • Dicing (AREA)
  • Adhesive Tapes (AREA)
  • Adhesives Or Adhesive Processes (AREA)
  • Die Bonding (AREA)
  • Laser Beam Processing (AREA)
JP2014074017A 2014-03-31 2014-03-31 ダイシングフィルム、ダイシング・ダイボンドフィルム及び半導体装置の製造方法 Active JP6312498B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2014074017A JP6312498B2 (ja) 2014-03-31 2014-03-31 ダイシングフィルム、ダイシング・ダイボンドフィルム及び半導体装置の製造方法
TW104109052A TWI660436B (zh) 2014-03-31 2015-03-20 切晶膜、切晶黏晶膜及半導體裝置之製造方法
KR1020150042298A KR102386082B1 (ko) 2014-03-31 2015-03-26 다이싱 필름, 다이싱·다이본드 필름 및 반도체 장치의 제조 방법
CN201510148818.2A CN104946152B (zh) 2014-03-31 2015-03-31 切割薄膜、切割/芯片接合薄膜及半导体装置的制造方法
KR1020220043723A KR102493750B1 (ko) 2014-03-31 2022-04-08 다이싱·다이본드 필름 및 반도체 장치의 제조 방법

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2014074017A JP6312498B2 (ja) 2014-03-31 2014-03-31 ダイシングフィルム、ダイシング・ダイボンドフィルム及び半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JP2015198118A JP2015198118A (ja) 2015-11-09
JP6312498B2 true JP6312498B2 (ja) 2018-04-18

Family

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JP2014074017A Active JP6312498B2 (ja) 2014-03-31 2014-03-31 ダイシングフィルム、ダイシング・ダイボンドフィルム及び半導体装置の製造方法

Country Status (4)

Country Link
JP (1) JP6312498B2 (ko)
KR (2) KR102386082B1 (ko)
CN (1) CN104946152B (ko)
TW (1) TWI660436B (ko)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6574685B2 (ja) * 2015-11-12 2019-09-11 日東電工株式会社 ダイシング・ダイボンドフィルム及び半導体装置の製造方法
JP6577341B2 (ja) * 2015-11-13 2019-09-18 日東電工株式会社 積層体および半導体装置の製造方法
JP6662074B2 (ja) * 2016-02-05 2020-03-11 日立化成株式会社 接着フィルム
CN107227123A (zh) * 2016-03-24 2017-10-03 日东电工株式会社 切割芯片接合薄膜及半导体装置的制造方法
JP2017183705A (ja) * 2016-03-24 2017-10-05 日東電工株式会社 ダイシングダイボンドフィルム、及び、半導体装置の製造方法
CN106206397B (zh) * 2016-08-05 2020-02-07 厦门市三安光电科技有限公司 用于半导体器件的薄膜及半导体器件的制作方法
KR102383560B1 (ko) * 2016-10-28 2022-04-08 가부시키가이샤 도교 세이미쓰 워크 분할 장치 및 워크 분할 방법
JP6980680B2 (ja) * 2016-11-02 2021-12-15 リンテック株式会社 ステルスダイシング用粘着シート
JP6877982B2 (ja) * 2016-12-08 2021-05-26 日東電工株式会社 接着フィルム、ダイシング・ダイボンドフィルム、半導体装置の製造方法及び半導体装置
KR20180116755A (ko) * 2017-04-17 2018-10-25 닛토덴코 가부시키가이샤 다이싱 다이 본드 필름
JP7017334B2 (ja) * 2017-04-17 2022-02-08 日東電工株式会社 ダイシングダイボンドフィルム
JP2019197784A (ja) * 2018-05-08 2019-11-14 株式会社ディスコ レーザー加工装置
KR20210107031A (ko) * 2018-12-28 2021-08-31 쇼와덴코머티리얼즈가부시끼가이샤 광경화성 점착제의 평가 방법, 다이싱·다이본딩 일체형 필름과 그 제조 방법, 및 반도체 장치의 제조 방법
JP6835296B1 (ja) * 2019-05-10 2021-02-24 昭和電工マテリアルズ株式会社 ピックアップ性の評価方法、ダイシング・ダイボンディング一体型フィルム、ダイシング・ダイボンディング一体型フィルムの評価方法及び選別方法、並びに半導体装置の製造方法

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JP3408805B2 (ja) 2000-09-13 2003-05-19 浜松ホトニクス株式会社 切断起点領域形成方法及び加工対象物切断方法
JP4578050B2 (ja) * 2001-09-04 2010-11-10 グンゼ株式会社 ウェハダイシングテープ用基材
JP4358502B2 (ja) 2002-03-12 2009-11-04 浜松ホトニクス株式会社 半導体基板の切断方法
JP2005191297A (ja) * 2003-12-25 2005-07-14 Jsr Corp ダイシングフィルム及び半導体ウェハの切断方法
JP4891603B2 (ja) * 2005-12-07 2012-03-07 電気化学工業株式会社 粘着シート及びそれを用いた電子部品製造方法。
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JP2009049400A (ja) * 2007-07-25 2009-03-05 Nitto Denko Corp 熱硬化型ダイボンドフィルム
JP2009164556A (ja) * 2007-12-11 2009-07-23 Furukawa Electric Co Ltd:The ウエハ加工用テープ
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JP2011060848A (ja) * 2009-09-07 2011-03-24 Nitto Denko Corp 熱硬化型ダイボンドフィルム、ダイシング・ダイボンドフィルム、及び、半導体装置
JP4927187B2 (ja) * 2010-02-19 2012-05-09 日東電工株式会社 ダイシング・ダイボンドフィルム
JP2011187571A (ja) * 2010-03-05 2011-09-22 Nitto Denko Corp ダイシング・ダイボンドフィルム
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TW201207070A (en) * 2010-07-05 2012-02-16 Nitto Denko Corp Active energy ray-curable pressure-sensitive adhesive for re-release and dicing die-bonding film
JP2012079936A (ja) * 2010-10-01 2012-04-19 Nitto Denko Corp ダイシング・ダイボンドフィルム、及び、半導体装置の製造方法
JP2012142368A (ja) * 2010-12-28 2012-07-26 Nitto Denko Corp ダイシング・ダイボンドフィルム及び半導体素子
TW201305306A (zh) * 2011-07-25 2013-02-01 Nitto Denko Corp 接著片及其用途
JP5828706B2 (ja) * 2011-08-03 2015-12-09 日東電工株式会社 ダイシング・ダイボンドフィルム
JP2013038181A (ja) * 2011-08-05 2013-02-21 Nitto Denko Corp ダイシング・ダイボンドフィルム
JP5554351B2 (ja) * 2012-01-25 2014-07-23 古河電気工業株式会社 ウエハ加工用テープ

Also Published As

Publication number Publication date
JP2015198118A (ja) 2015-11-09
CN104946152A (zh) 2015-09-30
TW201539586A (zh) 2015-10-16
KR20150113878A (ko) 2015-10-08
TWI660436B (zh) 2019-05-21
KR20220050110A (ko) 2022-04-22
KR102493750B1 (ko) 2023-02-06
CN104946152B (zh) 2022-10-21
KR102386082B1 (ko) 2022-04-14

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