CN104934477A - 具有改进的栅极电荷的功率半导体晶体管 - Google Patents
具有改进的栅极电荷的功率半导体晶体管 Download PDFInfo
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- CN104934477A CN104934477A CN201510118084.3A CN201510118084A CN104934477A CN 104934477 A CN104934477 A CN 104934477A CN 201510118084 A CN201510118084 A CN 201510118084A CN 104934477 A CN104934477 A CN 104934477A
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- 239000004065 semiconductor Substances 0.000 title description 5
- 239000000758 substrate Substances 0.000 claims abstract description 29
- 238000009825 accumulation Methods 0.000 claims abstract description 10
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 8
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 8
- 239000010703 silicon Substances 0.000 claims abstract description 8
- 238000002955 isolation Methods 0.000 claims abstract description 7
- 210000000746 body region Anatomy 0.000 claims description 24
- 238000000034 method Methods 0.000 claims description 18
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- 238000007254 oxidation reaction Methods 0.000 claims description 5
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- 229920005591 polysilicon Polymers 0.000 description 9
- 230000004888 barrier function Effects 0.000 description 7
- 238000005516 engineering process Methods 0.000 description 5
- 230000008569 process Effects 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 230000008859 change Effects 0.000 description 3
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- 150000004706 metal oxides Chemical class 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
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Classifications
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7816—Lateral DMOS transistors, i.e. LDMOS transistors
- H01L29/7825—Lateral DMOS transistors, i.e. LDMOS transistors with trench gate electrode
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
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- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
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- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/76202—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO
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- H01L29/4238—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the conducting layer, e.g. the length, the sectional shape or the lay-out characterised by the surface lay-out
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- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
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- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
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- H01L29/66681—Lateral DMOS transistors, i.e. LDMOS transistors
- H01L29/66704—Lateral DMOS transistors, i.e. LDMOS transistors with a step of recessing the gate electrode, e.g. to form a trench gate electrode
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
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- H01L29/7833—Field effect transistors with field effect produced by an insulated gate with lightly doped drain or source extension, e.g. LDD MOSFET's; DDD MOSFET's
- H01L29/7835—Field effect transistors with field effect produced by an insulated gate with lightly doped drain or source extension, e.g. LDD MOSFET's; DDD MOSFET's with asymmetrical source and drain regions, e.g. lateral high-voltage MISFETs with drain offset region, extended drain MISFETs
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M3/00—Conversion of dc power input into dc power output
- H02M3/02—Conversion of dc power input into dc power output without intermediate conversion into ac
- H02M3/04—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters
- H02M3/10—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
- H02M3/145—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
- H02M3/155—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only
- H02M3/156—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of output voltage or current, e.g. switching regulators
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- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
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- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/1025—Channel region of field-effect devices
- H01L29/1029—Channel region of field-effect devices of field-effect transistors
- H01L29/1033—Channel region of field-effect devices of field-effect transistors with insulated gate, e.g. characterised by the length, the width, the geometric contour or the doping structure
- H01L29/1041—Channel region of field-effect devices of field-effect transistors with insulated gate, e.g. characterised by the length, the width, the geometric contour or the doping structure with a non-uniform doping structure in the channel region surface
- H01L29/1045—Channel region of field-effect devices of field-effect transistors with insulated gate, e.g. characterised by the length, the width, the geometric contour or the doping structure with a non-uniform doping structure in the channel region surface the doping structure being parallel to the channel length, e.g. DMOS like
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
Abstract
Description
Claims (20)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201911005869.4A CN111211087B (zh) | 2014-03-20 | 2015-03-18 | 具有改进的栅极电荷的功率半导体晶体管 |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US14/220,439 US9306059B2 (en) | 2014-03-20 | 2014-03-20 | Power semiconductor transistor with improved gate charge |
US14/220,439 | 2014-03-20 |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
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CN201911005869.4A Division CN111211087B (zh) | 2014-03-20 | 2015-03-18 | 具有改进的栅极电荷的功率半导体晶体管 |
Publications (2)
Publication Number | Publication Date |
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CN104934477A true CN104934477A (zh) | 2015-09-23 |
CN104934477B CN104934477B (zh) | 2019-11-19 |
Family
ID=54121558
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
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CN201911005869.4A Active CN111211087B (zh) | 2014-03-20 | 2015-03-18 | 具有改进的栅极电荷的功率半导体晶体管 |
CN201510118084.3A Active CN104934477B (zh) | 2014-03-20 | 2015-03-18 | 具有改进的栅极电荷的功率半导体晶体管 |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
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CN201911005869.4A Active CN111211087B (zh) | 2014-03-20 | 2015-03-18 | 具有改进的栅极电荷的功率半导体晶体管 |
Country Status (4)
Country | Link |
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US (2) | US9306059B2 (zh) |
KR (1) | KR101925668B1 (zh) |
CN (2) | CN111211087B (zh) |
HK (1) | HK1215469A1 (zh) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN106486550A (zh) * | 2015-08-27 | 2017-03-08 | 瑞萨电子株式会社 | 半导体器件以及制造半导体器件的方法 |
CN107342325A (zh) * | 2017-06-30 | 2017-11-10 | 东南大学 | 一种横向双扩散金属氧化物半导体器件 |
CN112447843A (zh) * | 2019-09-02 | 2021-03-05 | 无锡华润上华科技有限公司 | 场极板及横向扩散金属氧化物半导体器件 |
WO2021232809A1 (zh) * | 2020-05-21 | 2021-11-25 | 无锡华润上华科技有限公司 | 半导体器件 |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9306059B2 (en) * | 2014-03-20 | 2016-04-05 | Kinetic Technologies | Power semiconductor transistor with improved gate charge |
US9373712B2 (en) | 2014-09-29 | 2016-06-21 | Taiwan Semiconductor Manufacturing Co., Ltd. | Transistor and method of manufacturing the same |
US9799764B2 (en) * | 2015-12-31 | 2017-10-24 | Sk Hynix System Ic Inc. | Lateral power integrated devices having low on-resistance |
KR20210062765A (ko) * | 2019-11-21 | 2021-06-01 | 삼성전자주식회사 | Mos 구조를 포함하는 반도체 소자 |
CN114429954A (zh) * | 2020-10-29 | 2022-05-03 | 联华电子股份有限公司 | 半导体元件及其制作方法 |
CN114914293A (zh) * | 2022-05-30 | 2022-08-16 | 无锡沃达科半导体技术有限公司 | 一种双扩散mos晶体管结构及其制造方法 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20120098062A1 (en) * | 2010-10-26 | 2012-04-26 | Texas Instruments Incorporated | Hybrid active-field gap extended drain mos transistor |
US20120112274A1 (en) * | 2010-11-09 | 2012-05-10 | Kabushiki Kaisha Toshiba | Semiconductor device and method of fabricating the same |
CN103646964A (zh) * | 2011-01-26 | 2014-03-19 | 立锜科技股份有限公司 | 双扩散金属氧化物半导体元件及其制造方法 |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20060273379A1 (en) | 2005-06-06 | 2006-12-07 | Alpha & Omega Semiconductor, Ltd. | MOSFET using gate work function engineering for switching applications |
EP1966828A1 (en) * | 2005-12-19 | 2008-09-10 | Nxp B.V. | Asymmetrical field-effect semiconductor device with sti region |
US7405128B1 (en) * | 2007-02-14 | 2008-07-29 | Freescale Semiconductor, Inc. | Dotted channel MOSFET and method |
US8138049B2 (en) * | 2009-05-29 | 2012-03-20 | Silergy Technology | Fabrication of lateral double-diffused metal oxide semiconductor (LDMOS) devices |
US20110115018A1 (en) | 2009-11-13 | 2011-05-19 | Maxim Integrated Products, Inc. | Mos power transistor |
US9306059B2 (en) * | 2014-03-20 | 2016-04-05 | Kinetic Technologies | Power semiconductor transistor with improved gate charge |
-
2014
- 2014-03-20 US US14/220,439 patent/US9306059B2/en active Active
-
2015
- 2015-03-16 KR KR1020150036202A patent/KR101925668B1/ko active IP Right Grant
- 2015-03-18 CN CN201911005869.4A patent/CN111211087B/zh active Active
- 2015-03-18 CN CN201510118084.3A patent/CN104934477B/zh active Active
-
2016
- 2016-03-10 US US15/066,946 patent/US9673319B2/en active Active
- 2016-03-23 HK HK16103362.6A patent/HK1215469A1/zh unknown
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20120098062A1 (en) * | 2010-10-26 | 2012-04-26 | Texas Instruments Incorporated | Hybrid active-field gap extended drain mos transistor |
US20120112274A1 (en) * | 2010-11-09 | 2012-05-10 | Kabushiki Kaisha Toshiba | Semiconductor device and method of fabricating the same |
CN103646964A (zh) * | 2011-01-26 | 2014-03-19 | 立锜科技股份有限公司 | 双扩散金属氧化物半导体元件及其制造方法 |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN106486550A (zh) * | 2015-08-27 | 2017-03-08 | 瑞萨电子株式会社 | 半导体器件以及制造半导体器件的方法 |
CN107342325A (zh) * | 2017-06-30 | 2017-11-10 | 东南大学 | 一种横向双扩散金属氧化物半导体器件 |
CN107342325B (zh) * | 2017-06-30 | 2020-03-31 | 东南大学 | 一种横向双扩散金属氧化物半导体器件 |
CN112447843A (zh) * | 2019-09-02 | 2021-03-05 | 无锡华润上华科技有限公司 | 场极板及横向扩散金属氧化物半导体器件 |
WO2021232809A1 (zh) * | 2020-05-21 | 2021-11-25 | 无锡华润上华科技有限公司 | 半导体器件 |
CN113707715A (zh) * | 2020-05-21 | 2021-11-26 | 无锡华润上华科技有限公司 | 半导体器件 |
Also Published As
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CN111211087A (zh) | 2020-05-29 |
KR20150110346A (ko) | 2015-10-02 |
CN111211087B (zh) | 2024-01-02 |
US20150270389A1 (en) | 2015-09-24 |
US9306059B2 (en) | 2016-04-05 |
US20160197180A1 (en) | 2016-07-07 |
CN104934477B (zh) | 2019-11-19 |
KR101925668B1 (ko) | 2018-12-05 |
US9673319B2 (en) | 2017-06-06 |
HK1215469A1 (zh) | 2016-08-26 |
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