CN104812938B - Ald反应器中的衬底装载 - Google Patents

Ald反应器中的衬底装载 Download PDF

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CN104812938B
CN104812938B CN201280077254.2A CN201280077254A CN104812938B CN 104812938 B CN104812938 B CN 104812938B CN 201280077254 A CN201280077254 A CN 201280077254A CN 104812938 B CN104812938 B CN 104812938B
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substrate support
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V·基尔皮
J·科斯塔莫
W-M·李
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Picosun Oy
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Abstract

本发明涉及一种仪器和方法,所述仪器和方法用于将多个衬底装载到沉积反应器的装载室中的衬底支架内以在所述衬底支架内形成水平定向的衬底的垂直堆叠,用于转动衬底支架以形成垂直定向的衬底的水平堆叠,和用于将所述衬底支架下降至所述沉积反应器的反应室内用于沉积。获得的技术效果是:用于垂直流沉积反应器的顶部装载系统,其中衬底可以以水平定向装载,通过翻转整个衬底支架而消除了分别翻转每一个衬底的必要,和最小化了反应器集群中的装载距离。

Description

ALD反应器中的衬底装载
技术领域
本发明总的来说涉及沉积反应器。更特别地,本发明涉及原子层沉积反应器,其中材料通过顺序自饱和表面反应沉积在表面上。
背景技术
原子层外延(ALE)法由Tuomo Suntola博士在七十年代早期发明。该方法的另一种通用名是原子层沉积(ALD),并且现在该通用名取代ALE被使用。ALD是基于向至少一个衬底顺序引入至少两种反应性前体物质的特殊化学沉积方法。
由ALD生长的薄膜致密、无孔并且厚度均匀。例如,在实验中,氧化铝通过热ALD由三甲基铝(CH3)3Al(也称作TMA)和水在250-300℃生长,导致衬底晶片上仅约1%的不均匀度。
发明内容
存在多种用于将单一衬底或一批衬底装载到沉积反应器中的方法。目前发现,如果将衬底水平定向地装载到装载室中的衬底支架内,并且随后将衬底支架转动并下降至反应室内用于沉积,则可以获得一定的益处。
根据本发明的第一示例方面,提供了一种方法,其包括:
将多个衬底装载至沉积反应器的装载室中的衬底支架内,以在所述衬底支架内形成水平定向的衬底的垂直堆叠;和
转动所述衬底支架以形成垂直定向的衬底的水平堆叠,并且将所述衬底支架下降至所述沉积反应器的反应室内用于沉积。
在一些示例实施方式中,所述方法包括通过装载器将衬底一次一个地移动通过装载口进入所述装载室。在一些示例实施方式中,将衬底从传送室(沉积反应器外部的)移动至装载室(沉积反应器的)内。在一些示例实施方式中,衬底穿过水平定向的装载口。
水平定向基本上是指衬底表面的法向量指向垂直方向。相反地,垂直定向基本上是指衬底表面的法向量指向水平方向。
衬底可以是晶片。装载器可以是装载人员或装载设备,例如装载机器人。装载器可以是单一晶片装载器。取决于实施情况,所述装载口可以例如仅仅是一个开口、舱口或门、或装载锁。在一些示例实施方式中,装载器从装载设备拾取和返回站(pick up and returnstation)拾取衬底并将其传送(移动)至装载室内。所述传送可以通过传送室或不通过传送室发生。装载器可以从衬底盒中拾取衬底。衬底可以在盒中水平定向。在一些示例实施方式中,所述方法包括通过装置前端模块从衬底存储载体中将所述衬底装载至装载设备拾取和返回站内。衬底可以首先位于受控环境中,例如在衬底储存载体(例如FOUP或类似物)内的保护气氛(例如氮气氛)中。所述装置前端模块将衬底装载至装载设备拾取和返回站内,将衬底保持在受控环境(保护气氛)中。或者,装载设备拾取和返回站可以在真空下。传送室和装载室可以在真空下。装载设备拾取和返回站可以含有在盒中水平定向的衬底。如果需要,装载设备拾取和返回站可以是盒至盒的站,其将衬底从一个盒子传送至另一个盒子,从中所述装载设备可以更好地一次拾取一个衬底。装载设备拾取和返回站可以形成传送室的一部分。
在一些示例实施方式中,所述方法包括:
通过装置前端模块将所述衬底从衬底储存载体装载至装载设备拾取和返回站内;和
从所述装载设备拾取和返回站将所述衬底一次一个地经过传送室装载到所述装载室内。
在一些示例实施方式中,沉积反应器包含装载室和反应室之间的闸门(gate)。这可能是为了在将衬底装载进入装载室的过程中减少反应室的冷却。所述闸门可以是闸门阀。在将衬底装载进入装载室的过程中,闸门可以处在关闭位置。装载完成后,打开闸门以允许被装载的衬底批次下降进入反应室。其后可以关闭闸门。这些实施方式尤其适用于其中装载室在反应室顶部的反应器。因此,在一些示例实施方式中,所述方法包括:
在装载室和反应室之间提供闸门,所述装载室位于所述反应室的顶部。
在一些示例实施方式中,反应室被真空室包围。在这些实施方式中,闸门位于真空室和装载室之间可能是便利的。如果反应室加热器位于真空室内,则关闭了从真空室到装载室(在真空室顶部)的路径的闸门减少了从真空室至装载室的热传递。在将衬底装载进入装载室的过程中,闸门可以从顶部关闭真空室。
在一些实施方式中,设置转动(或翻转),使得所述转动是为摆动样移动。在一些其他示例实施方式中,所述转动可以是旋转移动。因此,在一些示例实施方式中,所述方法包括通过旋转移动来转动所述衬底支架。在一些示例实施方式中,所述方法包括通过致动器(或在本文和下文中更通常为转动机构)从侧面接入所述衬底支架,并通过所述致动器转动衬底支架。在一些示例实施方式中,所述衬底支架包括旋转中心。所述致动器可以被推至与所述旋转中心接触并且所述衬底支架可以围绕旋转中心处的旋转轴旋转。旋转轴可以由所述致动器限定。在一些示例实施方式中,装载室提供引线(feedthrough)通过装载室壁(例如侧壁)以使所述致动器进入装载室。所述致动器在转动衬底支架后可以通过同一引线返回(移回)。如果将例如热反射板或类似物整合入反应室盖,那么这些板具有更多空间来穿过。在一些示例实施方式中,所述衬底支架通过转动机构从两个相对的侧面接入。这些实施方式中的转动机构可以包括两个相对的致动器和两个旋转中心。
在一些其它示例实施方式中,所述转动可以是通过转动装置支持的自由移动。在一些示例实施方式中,所述转动设置为发生在沉积反应器的装载室内。
在一些实施方式中,设置转动,使得处于装载位置(即,处于装载衬底的位置)的衬底支架比处于转动位置(即,处于其中所述衬底形成水平堆叠的位置)的衬底支架离装载室门(或装载口)更近。即,在一些示例实施方式中,将装载的衬底支架转动而更远离装载室门。
在一些示例实施方式中,所述方法包括通过顺序自饱和表面反应将材料沉积在衬底表面上。因此,在一些示例实施方式中,所述方法包括:
将所述多个衬底在所述反应室内暴露于时间上隔开的前体脉冲,以通过顺序自饱和表面反应将材料沉积在衬底表面上。
根据本发明的第二示例方面提供了一种仪器,其中
装载器构造为将多个衬底装载到沉积反应器的装载室中的衬底支架内以在所述衬底支架内形成水平定向的衬底的垂直堆叠,所述仪器包括:
转动机构和升降机,所述转动机构构造为转动所述衬底支架以形成垂直定向衬底的水平堆叠,所述升降机构造为将所述衬底支架下降至所述沉积反应器的反应室内用于沉积。
在一些示例实施方式中,所述转动机构包括例如转动部件或转动设备。所述转动机构和升降机可以是组合的装置或分开的装置。所述转动和下降可以同时发生或相继发生。在一些示例实施方式中,装载器构造为将衬底一次一个地移动通过装载口进入所述装载室。
在一些示例实施方式中,所述仪器包括:
所述装载室和反应室之间的闸门,所述装载室位于所述反应室的顶部。
在一些示例实施方式中,所述仪器包括:
构造为将所述衬底从衬底存储载体装载至装载设备拾取和返回站内的装置前端模块;和
构造为将所述衬底从所述装载设备拾取和返回站一次一个地经过传送室装载至所述装载室内的装载设备。
在一些示例实施方式中,所述转动机构构造为通过旋转移动来转动所述衬底支架。
在一些示例实施方式中,所述转动机构构造为从侧面接入所述衬底支架,并且转动所述衬底支架。
在一些示例实施方式中,所述仪器构造为转动装载的衬底支架更远离装载室门(相对于装载位置)。
在一些实施方式中,所述仪器包括多个相互之间以预定方式放置的沉积反应器,并且所述装载设备构造为装载所述沉积反应器中的每一个。因此,可以形成反应器集群系统。
前面已经描述了本发明的不同非限定的示例方面和实施方式。上面的实施方式仅仅用来解释可以用来实施本发明的选择的方面或步骤。一些实施方式仅根据本发明的一些示例方面而提供。应理解,相应的实施方式还可以应用于其他示例方面。可以形成所述实施方式的任意适当的组合。
附图说明
现在将参考附图仅示例性地描述本发明,其中:
图1显示了根据一个示例实施方式的沉积反应器和衬底装载器的侧视图;
图2显示了根据一个示例实施方式的沉积过程中图1的沉积反应器的侧视图;
图3A-3C显示了根据一些示例实施方式在沉积反应器内转动衬底支架的示例;
图4显示了根据一个示例实施方式的沉积反应器集群;
图5显示了根据一个具体示例实施方式来转动衬底支架;
图6显示了根据另一个示例实施方式的沉积反应器的侧视图。
具体实施方式
在下面的描述中,原子层沉积(ALD)技术作为示例使用。ALD生长机理的基础知识对于本领域的技术人员来说是已知的。如本专利申请简介部分所述,ALD是一种特殊的化学沉积方法,其基于向至少一个衬底顺序引入至少两种反应性前体物质。将所述至少一个衬底在反应室内暴露于时间上隔开的前体脉冲,以通过顺序自饱和表面反应将材料沉积在衬底表面上。
基本的ALD沉积循环由四个顺序的步骤组成:脉冲A、吹扫A、脉冲B和吹扫B。脉冲A由第一前体蒸汽组成而脉冲B由另一前体蒸汽组成。惰性气体和真空泵被用来吹扫气相反应副产物以及脉冲A和脉冲B过程中来自反应空间的残留反应物分子。沉积顺序包括至少一个沉积循环。重复沉积循环直至沉积顺序产生了期望厚度的薄膜或涂层。沉积循环还可以更复杂。例如,所述循环可以包括三个或更多由吹扫步骤分隔开的反应物蒸汽脉冲。所有这些沉积循环形成定时的沉积顺序,所述定时的沉积顺序通过逻辑单元或微处理器控制。
图1显示根据一个示例实施方式的沉积反应器和衬底装载器的侧视图。所述沉积反应器包括容纳反应室103的真空室104。真空室104通过真空室顶部法兰113限定其顶部侧面、并且通过真空室底部115限定其底部侧面。反之,真空室104内的反应室103通过反应室顶部法兰114限定其顶部侧面。在反应室103的底部是向真空泵(未显示)延伸的排气管线105。图1还显示穿过真空室底部115的前体蒸汽进料管线106。
反应室103的顶部是装载室102。在装载室102的侧面上,沉积反应器包含与装载室102连接的装载口101,所述装载口101用于通过装载器131来装载和卸载衬底。在一些示例实施方式中,装载口101可以是闸门阀、装载锁或仅仅是门。衬底水平定向地(在本示例实施方式中,不是垂直定向)安插通过装载口101。
将提升机构(升降机,例如分度机构)141连接到装载室102。在图1所示实施例中,提升机构与装载室102的顶部连接。在装载室内,衬底支架121连接于提升机构141。取决于实施情况,反应室盖112可以连接至衬底支架112和/或提升机构141。
提升机构141控制衬底支架121的垂直位置。在图1所示的示例实施方式中,提升机构141包括电机(例如步进电机),所述电机按照期望的那样向上或向下移动与反应室盖112和/或衬底支架121相连的提升杆142。衬底支架121尽管由于画图特有的原因而画成具有均一封闭的轮廓,但可以尽可能的开放。
将衬底120通过装载器131经由装载口101装载到装载室102并从装载室102卸载。装载器131可以是机器人。图1显示装载器131包含延伸的装载臂132,装载器通过该装载臂夹持住衬底120。装载器131将水平定向的衬底120移动通过装载口101进入衬底支架121。衬底支架121具有合适的支撑物122a和122b来支撑衬底120。在本实施例中,支撑物122a位于衬底支架121的底部(该装载位置中的底部指向一侧)并且支撑物122b位于中间区域。装载器131然后从存储区或存储架(未显示)拾取下一个衬底。提升机构141将衬底支架121下降至下一个衬底的位置。装载器131将下一个水平定向的衬底120移动通过装载口101进入衬底支架121内,以此类推。
当所有的衬底被装载进入衬底支架121,在衬底支架121内形成了水平定向的衬底的垂直堆叠。衬底支架121然后被转动90度以形成垂直定向的衬底的水平堆叠。并且,通过提升机构141使衬底支架121下降进入反应室103。转动和下降步骤如箭头190所示。
形成的情况显示于图2的最右侧图,该图显示图1的沉积反应器,提升机构141在其最低位置。在该位置,反应室103用下降的反应室盖112从顶侧密封,并且ALD过程可以开始。然而应当注意,不必将反应室盖112连接至提升机构141,而其它通过盖子关闭反应室103的方法也是可以的。此外,真空室104在一些示例实施方式中在ALD过程中通过盖子关闭以分离真空室104和装载室102。用于该目的的真空室盖可以类似于反应室盖112整合入所述提升机构。
另一方面,图2最左侧图显示衬底支架121另一侧向的侧视图,如示例实施方式中用箭头20所示。该示例实施方式描述了一个实施例,其中衬底支架121可以通过绕旋转轴旋转而转动。吊挂部件或吊板223连接至反应室盖112。衬底支架两侧或侧板221在旋转中心224的位置点处连接至吊挂部件或吊板223。衬底支架可以围绕由旋转中心224限定的旋转轴旋转。
回到图2的最右侧图,在ALD过程中,前体蒸汽从前体蒸汽源(未显示)经进料管线106流入反应室103。在本实施例中,进料管线106穿过设置在反应室盖112内的通道。气体进入反应室103是发生在反应室103的顶部。反应室103内的流动方向是在垂直定向的衬底之间(并且沿着衬底的表面)从顶部向底部流向排出管线105。
将衬底支架121从第一定向(具有水平定向衬底的垂直堆叠)转动至第二定向(具有垂直定向衬底的水平堆叠)的方法可以以多种替代方式发生。一些例子显示于图3A-3C中。
图3A显示一个通过旋转移动来转动的初始实施例。在该实施例中,转动机构380a连接至衬底支架321a,在图3A中位于衬底支架321a的一侧或两侧的中心。转动机构380a促使衬底支架321a围绕连接点或类似的旋转中心旋转90度(一个实施例显示于图2的最左侧图)。
图3B显示通过摆动样移动来转动的初始实施例。在这个实施例中,转动机构380b连接至衬底支架321b,在图3B中接入衬底支架321b的一侧或两侧的底部。转动机构380b促使衬底支架321b通过摆动样移动围绕转动机构380b所限定的轴转动90度。衬底支架321b的位置由于摆动样移动在水平方向发生移动。这种具有摆动样移动的实施方式很适合要求最小化装载距离的实施,因为在这种实施方式中在装载位置的衬底支架比在转动位置的衬底支架距离装载口更近。然而,在其它实施方式中,例如图3A中通过平移移动并且然后旋转来移动衬底支架,也可以获得相同的效果。
在如图3A和3B所示的实施方式中,转动机构可以连接至提升机构141。
图3C显示通过转动机构支撑的自由移动来转动的初始实施例。在该实施例中,转动机构380c被连接至装载室102的壁上。转动机构380c具有夹持部件,该夹持部件夹持住衬底支架321c并且将其转动90度。
在之前和其它示例实施方式中,所述衬底可以是板状衬底,例如晶片。提升机构和转动机构可以形成组合的机构,或者它们可以是分离的机构。衬底支架的转动和下降可以同时发生或相继发生。
装载器可以在存储区域或存储架(例如从衬底盒)拾取衬底并且通过传送室将其传送至装载室内,其中装载器至少部分位于传送室内。所述传送室和装载室可以处于真空。存储区域或存储架自身可以位于传送室内或与传送室连接。
在一些示例实施方式中,装载器可以是装载人员或装载设备,例如装载机器人。装载器可以是单一晶片装载器。取决于实施情况,装载室的装载口可以例如仅仅是开口、舱口或门、或装载锁。在一些示例实施方式中,装载器从装载设备拾取和返回站拾取衬底并且将其传送(移动)至装载室内。传送可以通过传送室发生或不经过传送室发生。装载器可以从衬底盒拾取衬底。所述衬底在盒中可以水平定向。在一些示例实施方式中,通过装置前端模块将衬底从衬底存储载体装载至装载设备拾取与返回站内。所述衬底可以首先位于受控环境,例如在衬底存储载体(例如FOUP或类似物)内的保护气氛(例如氮气氛)内。装置前端模块卸载衬底至装载设备拾取和返回站内,将衬底保持在受控环境(保护气氛)中。或者,装载设备拾取和返回站可以在真空下。传送室和装载室可以在真空下。在替代的实施方式中,传送室和装载室可以在保护气氛中。装载设备拾取和返回站可以含有盒中水平定向的衬底。如果需要,装载设备拾取和返回站可以是盒至盒的站,其将衬底从一个盒子传送至另一个盒子,从中所述装载设备可以更好地一次拾取一个衬底。装载设备拾取和返回站可以形成传送室的一部分。
在一些示例实施方式中,多个沉积反应器以它们相互之间预定方式放置以形成反应器集群。一种这样的集群如图4所示。在该实施例中,反应器集群包含三个沉积反应器400a、400b和400c。沉积反应器分别通过装载口401a、401b和401c连接至位于中心区域的传送室460。至少部分位于传送室460内的单个衬底装载器(或装载机器人)431构造为装载沉积反应器400a-c中的每一个。
首先将衬底置于超清洁衬底存储载体403内的受控环境中。衬底存储载体403放入装置前端模块404中,该模块卸载衬底至装载设备拾取和返回站405内使得衬底保持在受控环境中,而没有暴露于周围空气。在装载设备拾取和返回站405内,装载设备可以一次一个地拾取衬底用于装载并在ALD过程之后使它们返回。取决于实施情况,装置前端模块404可以同时处理一个或更多衬底存储载体403。结果,每次运行装载设备时,装载设备拾取和返回站405可以含有一个或更多衬底盒450。
图4显示装载设备拾取和返回站405处的两个衬底盒450。衬底盒450显示出具有处于彼此顶部的衬底、形成了垂直堆叠的衬底盒。在替代的实施方式中,盒中的衬底可以彼此相邻而形成垂直定向的衬底的水平堆叠。
在一个示例实施方式中,装载器431包括延伸的装载臂432(向后和向前延伸),装载器431通过装载臂432夹持住衬底。类似于图1所示,装载器431将衬底移动通过装载口401a进入第一反应器400a的衬底支架。类似地,进行其它沉积反应器400b-c的装载。如果一开始衬底不是水平定向(在替代的实施方式中垂直定向)的,那么在进入装载口401a之前,装载器431转动衬底至水平位置。为了该目的,装载器431的延伸臂432可以是可旋转的。装载器431本身也是可旋转的。它还可以能够平移。在更高级的实施方式中,装载器包括连接处或类似物,臂可以在连接处或类似物处向下转动使得装载器(除了能够从一侧拾取衬底之外)还可以例如从衬底盒的顶侧拾取衬底。
在一些示例实施方式中,装载设备拾取和返回站405、传送室460和沉积反应器400a-c的装载室在真空下。所述系统可以是全自动化系统。在较不复杂的系统中,装载口401a-c作为装载锁来实施,并且将衬底手工地装载至反应器400a-c的装载室内。传送室460可以忽略,并且装载室可以如期望的那样泵入真空。
图5显示根据具体示例实施方式,衬底支架500在装载室502内的转动。在这个示例实施方式中,衬底520水平定向地通过装载口501接收进入装载室502。升降机(未显示)提升或下降衬底支架500使得每个衬底520可以依次推到它的位置。类似图1和2所示,衬底520被衬底支架500内的支撑物支撑。支撑物522b(相对于图1和2中的支撑物122b)部分显示于图5的左上图。
吊板523(其中一个显示于图5)连接至反应室盖(未显示)。衬底支架侧板521(其中一个显示于图5)在旋转中心524(其中一个显示于图5)处连接至吊板523。衬底支架可围绕由旋转中心524限定的旋转轴旋转。致动器销550在装载室壁引线551处施压穿过装载室502的侧壁。如图5右上图所示,将致动器销550的成型端塞压入旋转中心524的对应的成型插槽中。对应的销(未显示)压入衬底支架500的相对侧的旋转中心。如图5右下方图中箭头所示,通过转动一个或两个致动器销550旋转衬底支架500。图5右下方图显示衬底支架500转动大约45度的位置,并且图5左下方图显示衬底支架500转动大约90度以形成垂直定向衬底的水平堆叠的位置。
一种示例实施方式中的旋转运动更详细地显示于左上方图和左下方图之间的放大图集中。该放大图集用黑颜色显示具有插槽的旋转中心524。旋转中心524进一步包括两个间隔90度的翅片(fin)。旋转中心524位于吊板523的孔内。在图5左上方图中,旋转中心524的第一翅片在吊板孔的侧槽内,将衬底支架500锁定在起始位置。所述孔略微大于旋转中心524。在下个阶段,反应室升降机(参见图1和2)相对于衬底支架侧板521下降吊板523,所述侧板521由于从侧面施压的致动器销而保持在其之前的垂直位置。这种移动释放出旋转中心524使得它们可以旋转。现在致动器销550将衬底支架转动90度。在最后阶段,反应室升降机相对于衬底支架侧板521提升吊板523使得旋转中心524的第二翅片移至侧槽内,因而将衬底支架500锁定成90度的转动位置。
致动器销可以是气动的。两个致动器销可以支撑衬底支架使得一个致动器销在第一侧支撑衬底支架并且另一个致动器销在相对侧支撑衬底支架。取决于实施情况,致动器可以设计成另外的形状。在一些实施方式中,装载室壁引线551是旋转引线。用于旋转移动的轴承置于装载室的外侧。
图6根据另一个示例实施方式显示沉积反应器的侧视图。在该实施方式中,沉积反应器包含处于装载室102和反应室103之间的闸门670。这可能是为了在装载衬底进入装载室102的过程中减少反应室103的冷却,所述装载室102位于反应室103的顶部。闸门670可以是闸门阀。如图6下方图描述,闸门670在装载衬底进入装载室102的过程中可以是关闭位置。完成装载后,将闸门670打开(如图6上方图所描述)以允许装载的衬底批次下降至反应室103内。否则,关于图6所示实施方式的结构和操作,参考图1和2所示实施方式。
不对本专利的权利要求的范围和解释进行限制,下面列出了本文公开的一个或更多示例实施方式的某些技术效果:一个技术效果是用于垂直流沉积反应器的顶部装载系统,其中衬底可以水平定向地装载。另一种技术效果是通过翻转整个衬底支架(尤其是如果衬底是水平定向地存储的话)而消除了分别翻转每一个衬底的必要。另一种技术效果最小化了反应器集群中的装载距离。
前述说明书通过本发明具体的实施情况和实施方式的非限制性实施例而提供了本发明人目前设想的用于实施本发明的最佳方式的全面且信息量大的描述。然而本领域技术人员清楚本发明并不限制于上述提供的实施方式的细节,而是在不背离本发明的特点的情况下可以使用等价的手段在其它实施方式中实施。
此外,本发明的上述公开的实施方式的一些特征在没有相应地使用其它特征的情况下可以有利地使用。据此,前述说明书应被理解为仅仅对本发明原理进行说明而不是对其进行限定。因此,本发明的范围只通过所附专利权利要求来限定。

Claims (14)

1.一种方法,其包括:
将多个衬底装载到沉积反应器的装载室中的衬底支架内,以在所述衬底支架内形成水平定向的衬底的垂直堆叠;和
转动所述衬底支架以形成垂直定向的衬底的水平堆叠,并且将所述衬底支架下降至所述沉积反应器的反应室内用于沉积。
2.根据权利要求1所述的方法,其中所述装载包括通过装载器将衬底一次一个地移动通过装载口进入所述装载室。
3.根据权利要求1或2的方法,其包括:
在所述装载室和所述反应室之间提供闸门,所述装载室位于所述反应室的顶部。
4.根据权利要求1或2的方法,其包括:
通过装置前端模块将所述衬底从衬底存储载体装载至装载设备拾取和返回站内;和
从所述装载设备拾取和返回站将所述衬底一次一个地经过传送室装载到所述装载室内。
5.根据权利要求1或2的方法,其包括通过旋转移动来转动所述衬底支架。
6.根据权利要求1或2的方法,其包括通过致动器从侧面接入所述衬底支架,并且通过所述致动器转动所述衬底支架。
7.根据权利要求1或2的方法,其包括:
将所述多个衬底在所述反应室内暴露于时间上隔开的前体脉冲,以通过依次的自饱和表面反应将材料沉积在衬底表面上。
8.一种仪器,其中
装载器构造为将多个衬底装载到沉积反应器的装载室中的衬底支架内以在所述衬底支架内形成水平定向的衬底的垂直堆叠,所述仪器包括:
转动机构和升降机,所述转动机构构造为转动所述衬底支架以形成垂直定向的衬底的水平堆叠,所述升降机构造为将所述衬底支架下降至所述沉积反应器的反应室内用于沉积。
9.根据权利要求8所述的仪器,其中所述装载器构造为将衬底一次一个地移动通过装载口进入所述装载室。
10.根据权利要求8或9所述的仪器,其包括:
所述装载室和所述反应室之间的闸门,所述装载室位于所述反应室的顶部。
11.根据权利要求8或9所述的仪器,其包括:
装置前端模块和装载设备,所述装置前端模块构造为将所述衬底从衬底存储载体装载至装载设备拾取和返回站内;并且所述装载设备构造为将所述衬底从所述装载设备拾取和返回站一次一个地经过传送室装载至所述装载室内。
12.根据权利要求8或9所述的仪器,其中所述转动机构构造为通过旋转移动来转动所述衬底支架。
13.根据权利要求8或9所述的仪器,其中所述转动机构构造为从侧面接入所述衬底支架,并且转动所述衬底支架。
14.根据权利要求8或9所述的仪器,其中所述仪器包括多个相互之间按预定方式放置的沉积反应器,并且所述装载设备构造为装载所述沉积反应器中的每一个。
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Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10347516B2 (en) * 2014-11-11 2019-07-09 Applied Materials, Inc. Substrate transfer chamber
US9520312B2 (en) * 2014-12-19 2016-12-13 Varian Semiconductor Equipment Associates, Inc. System and method for moving workpieces between multiple vacuum environments
US10533251B2 (en) * 2015-12-31 2020-01-14 Lam Research Corporation Actuator to dynamically adjust showerhead tilt in a semiconductor processing apparatus
WO2018050953A1 (en) * 2016-09-16 2018-03-22 Picosun Oy Apparatus and methods for atomic layer deposition
EP3559307B1 (en) * 2017-02-08 2022-08-03 Picosun Oy Deposition or cleaning apparatus with movable structure and method of operation
CN110582591B (zh) 2017-05-02 2022-05-10 皮考逊公司 原子层沉积设备、方法和阀
KR102495121B1 (ko) * 2018-03-28 2023-02-06 어플라이드 머티어리얼스, 인코포레이티드 기판을 프로세싱하는 진공 프로세싱 장치 및 방법
EP3672040A1 (en) * 2018-12-17 2020-06-24 Nexperia B.V. Device for enabling a rotating and translating movement by means of a single motor; apparatus and system comprising such a device
JP7292110B2 (ja) * 2019-05-29 2023-06-16 キヤノン株式会社 成膜装置および成膜方法
CN114026268A (zh) * 2019-06-25 2022-02-08 皮考逊公司 衬底背面保护
KR20210149266A (ko) 2020-06-01 2021-12-09 삼성디스플레이 주식회사 기판 고정 장치, 이를 포함하는 성막 처리 설비 및 이를 이용한 성막 처리 방법
RU2752059C1 (ru) * 2020-07-14 2021-07-22 Пикосан Ой Устройство для атомно-слоевого осаждения (ald)
RU2748658C1 (ru) * 2020-07-16 2021-05-28 Пикосан Ой Устройство для осаждения или очистки с подвижной конструкцией и способ его эксплуатации
CN113174588A (zh) * 2021-04-26 2021-07-27 睿馨(珠海)投资发展有限公司 一种原子层沉积系统及沉积方法
JP7197739B2 (ja) * 2021-05-10 2022-12-27 ピコサン オーワイ 基板処理装置及び方法

Family Cites Families (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
SU1093728A1 (ru) * 1982-07-16 1984-05-23 Предприятие П/Я А-7873 Подложкодержатель
JP2670503B2 (ja) 1988-04-01 1997-10-29 東京エレクトロン株式会社 半導体ウエハの熱処理装置
JP2545591B2 (ja) 1988-09-30 1996-10-23 国際電気株式会社 ウェーハ処理装置
JPH03125453A (ja) 1989-10-09 1991-05-28 Toshiba Corp 半導体ウエハ移送装置
EP0757843A1 (en) * 1994-04-28 1997-02-12 Semitool, Inc. Semiconductor processing system with wafer container docking and loading station
JPH0817894A (ja) * 1994-06-27 1996-01-19 Dainippon Screen Mfg Co Ltd 基板表面処理装置
US6536131B2 (en) * 1996-07-15 2003-03-25 Semitool, Inc. Wafer handling system
JPH11111836A (ja) * 1997-10-02 1999-04-23 Speedfam Co Ltd 浸漬式ワーク収納方法及び装置
US6110011A (en) 1997-11-10 2000-08-29 Applied Materials, Inc. Integrated electrodeposition and chemical-mechanical polishing tool
JP3827881B2 (ja) 1999-01-29 2006-09-27 株式会社アルバック 真空処理装置及び基板起立装置
NL1017849C2 (nl) * 2001-04-16 2002-10-30 Univ Eindhoven Tech Werkwijze en inrichting voor het deponeren van een althans ten dele kristallijne siliciumlaag op een substraat.
JP4033689B2 (ja) * 2002-03-01 2008-01-16 東京エレクトロン株式会社 液処理装置および液処理方法
JP2004281613A (ja) 2003-03-14 2004-10-07 Hitachi Kokusai Electric Inc 基板処理装置
JP4319510B2 (ja) * 2003-10-15 2009-08-26 東京エレクトロン株式会社 熱処理装置及び熱処理方法
KR100549276B1 (ko) * 2003-12-31 2006-02-03 주식회사 테라세미콘 반도체 제조장치의 기판홀더 교환장치
FI121543B (fi) * 2005-11-17 2010-12-31 Beneq Oy Järjestely ALD-reaktorin yhteydessä
US20090016853A1 (en) * 2007-07-09 2009-01-15 Woo Sik Yoo In-line wafer robotic processing system
US10041169B2 (en) 2008-05-27 2018-08-07 Picosun Oy System and method for loading a substrate holder carrying a batch of vertically placed substrates into an atomic layer deposition reactor
US8282334B2 (en) 2008-08-01 2012-10-09 Picosun Oy Atomic layer deposition apparatus and loading methods
KR20100071550A (ko) * 2008-12-19 2010-06-29 한미반도체 주식회사 웨이퍼 카세트 반송장치
JP5476006B2 (ja) 2009-02-13 2014-04-23 株式会社国際電気セミコンダクターサービス 基板処理装置、基板処理装置の基板保持具の固定部及び半導体装置の製造方法
JP5247528B2 (ja) * 2009-02-23 2013-07-24 株式会社日立国際電気 基板処理装置、半導体装置の製造方法、基板処理方法及びガス導入手段
JP4988902B2 (ja) 2009-07-31 2012-08-01 株式会社日立国際電気 半導体デバイスの製造方法及び基板処理装置
JP5460775B2 (ja) 2009-07-31 2014-04-02 株式会社日立国際電気 半導体デバイスの製造方法、半導体デバイス及び基板処理装置
KR101744372B1 (ko) 2011-01-20 2017-06-07 도쿄엘렉트론가부시키가이샤 진공 처리 장치
JP2012174763A (ja) 2011-02-18 2012-09-10 Hitachi Kokusai Electric Inc 基板処理装置
KR20180128514A (ko) 2011-04-07 2018-12-03 피코순 오와이 플라즈마 소오스를 갖는 퇴적 반응기
US20120306139A1 (en) * 2011-06-03 2012-12-06 Arthur Keigler Parallel single substrate processing system holder

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