CN105256287B - 前驱体空间分隔式制备铝酸铋薄膜的方法 - Google Patents
前驱体空间分隔式制备铝酸铋薄膜的方法 Download PDFInfo
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DE3683039D1 (de) * | 1986-04-04 | 1992-01-30 | Ibm Deutschland | Verfahren zum herstellen von silicium und sauerstoff enthaltenden schichten. |
CN1033384C (zh) * | 1993-01-15 | 1996-11-27 | 山东大学 | 钛酸铋铁电薄膜的制备方法 |
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CN103469173B (zh) * | 2013-09-12 | 2015-10-28 | 大连理工大学 | 空穴导电特性氧化镓膜的制备方法及空穴导电特性氧化镓膜 |
CN104451600B (zh) * | 2014-12-04 | 2017-01-18 | 华东师范大学 | 一种氧化铋薄膜材料的制备方法 |
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