JP6240678B2 - Ald反応炉における基板の装填 - Google Patents
Ald反応炉における基板の装填 Download PDFInfo
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- JP6240678B2 JP6240678B2 JP2015543487A JP2015543487A JP6240678B2 JP 6240678 B2 JP6240678 B2 JP 6240678B2 JP 2015543487 A JP2015543487 A JP 2015543487A JP 2015543487 A JP2015543487 A JP 2015543487A JP 6240678 B2 JP6240678 B2 JP 6240678B2
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- 239000000758 substrate Substances 0.000 title claims description 223
- 230000008021 deposition Effects 0.000 claims description 52
- 238000006243 chemical reaction Methods 0.000 claims description 50
- 230000007246 mechanism Effects 0.000 claims description 38
- 238000000034 method Methods 0.000 claims description 25
- 238000003860 storage Methods 0.000 claims description 14
- 230000033001 locomotion Effects 0.000 claims description 13
- 239000002243 precursor Substances 0.000 claims description 8
- 239000000463 material Substances 0.000 claims description 5
- 238000006557 surface reaction Methods 0.000 claims description 5
- 229920006395 saturated elastomer Polymers 0.000 claims description 4
- 238000000151 deposition Methods 0.000 description 45
- 238000000231 atomic layer deposition Methods 0.000 description 15
- 239000000725 suspension Substances 0.000 description 8
- 239000007789 gas Substances 0.000 description 6
- 239000012298 atmosphere Substances 0.000 description 5
- 238000010926 purge Methods 0.000 description 5
- 235000012431 wafers Nutrition 0.000 description 5
- 230000000694 effects Effects 0.000 description 4
- 238000003877 atomic layer epitaxy Methods 0.000 description 3
- 238000005234 chemical deposition Methods 0.000 description 2
- 230000003028 elevating effect Effects 0.000 description 2
- 239000012299 nitrogen atmosphere Substances 0.000 description 2
- 239000000376 reactant Substances 0.000 description 2
- 239000012713 reactive precursor Substances 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 239000012080 ambient air Substances 0.000 description 1
- 239000006227 byproduct Substances 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 238000005096 rolling process Methods 0.000 description 1
- 238000009738 saturating Methods 0.000 description 1
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
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- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
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Description
水平に向けられた基板群の鉛直方向の積み重ねを堆積反応炉の装填室内の基板ホルダの内部に形成するために、複数の基板を基板ホルダに装填することと、
鉛直に向けられた基板群の水平方向の積み重ねを形成するべく基板ホルダを転回させ、堆積のために基板ホルダを堆積反応炉の反応室内に下降させることと、
を含む方法が提供される。
装置前端モジュールによって前記複数の基板を基板収納キャリアから装填装置の取り上げおよび返却ステーションに装填することと、
前記複数の基板を一度に1枚ずつ前記装填装置取りだしおよび返却ステーションから移送室経由で前記装填室に装填することと、
を含む。
反応室の上にある装填室と反応室との間にゲートを設けること、
を含む。
材料を順次自己飽和表面反応によって前記複数の基板の表面に堆積させるために、反応室内で複数の基板を時間的に隔てられた複数の前駆体パルスに暴露すること、
を含む。
水平に向けられた基板群の鉛直方向の積み重ねを堆積反応炉の装填室内の基板ホルダの内部に形成するために、複数の基板を基板ホルダに装填するべくローダが構成され、本装置は、
鉛直に向けられた基板群の水平方向の積み重ねを形成するために基板ホルダを転回させるように構成された転回機構と、堆積のために基板ホルダを堆積反応炉の反応室内に下降させるように構成されたエレベータと、
を備える。
反応室の上にある装填室と反応室との間にゲートを備える。
前記複数の基板を基板収納キャリアから装填装置の取り上げおよび返却ステーションに装填するように構成された装置前端モジュールと、
前記複数の基板を一度に1枚ずつ装填装置の取り上げおよび返却ステーションから移送室経由で装填室内に装填するように構成された装填装置と、
を備える。
Claims (14)
- 水平に向けられた基板群の鉛直方向の積み重ねを堆積反応炉の装填室内の基板ホルダの内部に形成するために、複数の基板を前記基板ホルダに装填することと、
鉛直に向けられた基板群の水平方向の配列を形成するべく前記基板ホルダを転回させ、堆積のために前記基板ホルダを前記堆積反応炉の反応室内に下降させることと、
を含む方法。 - 前記装填は、複数の基板を一度に1枚ずつローダによって装填ポート経由で前記装填室内に移動させることを含む、請求項1に記載の方法。
- 前記反応室の上にある前記装填室と前記反応室との間にゲートを設けることを含む、請求項1または2に記載の方法。
- 前記複数の基板を、装置前端モジュールによって、基板収納キャリアから、装填装置の取り上げおよび返却ステーションに装填することと、
前記複数の基板を、一度に1枚ずつ、前記装填装置の取り上げおよび返却ステーションから移送室経由で前記装填室に装填することと、
を含む、請求項1から3の何れかに記載の方法。 - 前記基板ホルダを回転運動によって転回させることを含む、請求項1から4の何れかに記載の方法。
- アクチュエータによって一側面から前記基板ホルダにアクセスし、前記アクチュエータによって前記基板ホルダを転回させることを含む、請求項1から5の何れかに記載の方法。
- 材料を順次自己飽和表面反応によって前記複数の基板の表面に堆積させるために、前記反応室内で前記複数の基板を時間的に隔てられた複数の前駆体パルスに暴露すること、
を含む請求項1から6の何れかに記載の方法。 - 水平に向けられた基板群の鉛直方向の積み重ねを堆積反応炉の装填室内の基板ホルダの内部に形成するべく、複数の基板を前記基板ホルダに装填するようにローダが構成され、
鉛直に向けられた基板群の水平方向の配列を形成するために前記基板ホルダを転回させるように構成された転回機構と、堆積のために前記基板ホルダを前記堆積反応炉の反応室内に下降させるように構成されたエレベータとを備える、
装置。 - 前記ローダは、複数の基板を一度に1枚ずつ装填ポート経由で前記装填室に移動させるように構成される、請求項8に記載の装置。
- 前記反応室の上にある前記装填室と前記反応室との間にゲートを備える、
請求項8または9に記載の装置。 - 前記複数の基板を収納キャリアから装填装置の取り上げおよび返却ステーションに装填するように構成された装置前端モジュールと、
前記複数の基板を一度に1枚ずつ前記装填装置の取り上げおよび返却ステーションから移送室経由で前記装填室に装填するように構成された装填装置と、
を備える、請求項8から10の何れかに記載の装置。 - 前記転回機構は、前記基板ホルダを回転運動によって転回させるように構成される、請求項8から11の何れかに記載の装置。
- 前記転回機構は、前記基板ホルダに一側面からアクセスして前記基板ホルダを転回させるように構成される、請求項8から12の何れかに記載の装置。
- 互いに対して所定パターンで位置決めされた複数の堆積反応炉を備える請求項11に記載の装置であって、前記装填装置は前記複数の堆積反応炉の各々に装填するべく構成される、装置。
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