CN104810232B - 两次扫描 - Google Patents

两次扫描 Download PDF

Info

Publication number
CN104810232B
CN104810232B CN201510084685.7A CN201510084685A CN104810232B CN 104810232 B CN104810232 B CN 104810232B CN 201510084685 A CN201510084685 A CN 201510084685A CN 104810232 B CN104810232 B CN 104810232B
Authority
CN
China
Prior art keywords
tuftlet
data
pattern
chip
array
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201510084685.7A
Other languages
English (en)
Chinese (zh)
Other versions
CN104810232A (zh
Inventor
T.范德皮尤特
M.J-J.维兰德
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
ASML Netherlands BV
Original Assignee
Mapper Lithopraphy IP BV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mapper Lithopraphy IP BV filed Critical Mapper Lithopraphy IP BV
Publication of CN104810232A publication Critical patent/CN104810232A/zh
Application granted granted Critical
Publication of CN104810232B publication Critical patent/CN104810232B/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
    • G03F7/70475—Stitching, i.e. connecting image fields to produce a device field, the field occupied by a device such as a memory chip, processor chip, CCD, flat panel display
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
    • G06T1/00—General purpose image data processing
    • G06T1/20—Processor architectures; Processor configuration, e.g. pipelining
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/045—Beam blanking or chopping, i.e. arrangements for momentarily interrupting exposure to the discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/3002—Details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/302—Controlling tubes by external information, e.g. programme control
    • H01J37/3023—Programme control
    • H01J37/3026—Patterning strategy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
    • H01J37/3175—Projection methods, i.e. transfer substantially complete pattern to substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
    • H01J37/3177—Multi-beam, e.g. fly's eye, comb probe
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274—Photolithographic processes
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
    • G06T1/00—General purpose image data processing
    • G06T1/60—Memory management
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/3175—Lithography
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/3175—Lithography
    • H01J2237/31761—Patterning strategy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/3175—Lithography
    • H01J2237/31761—Patterning strategy
    • H01J2237/31764—Dividing into sub-patterns
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N1/00—Scanning, transmission or reproduction of documents or the like, e.g. facsimile transmission; Details thereof
    • H04N1/40—Picture signal circuits
    • H04N1/405—Halftoning, i.e. converting the picture signal of a continuous-tone original into a corresponding signal showing only two levels

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Analytical Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Theoretical Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electron Beam Exposure (AREA)
CN201510084685.7A 2009-05-20 2010-05-19 两次扫描 Active CN104810232B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US17976209P 2009-05-20 2009-05-20
US61/179,762 2009-05-20
CN201080032733.3A CN102460631B (zh) 2009-05-20 2010-05-19 两次扫描

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
CN201080032733.3A Division CN102460631B (zh) 2009-05-20 2010-05-19 两次扫描

Publications (2)

Publication Number Publication Date
CN104810232A CN104810232A (zh) 2015-07-29
CN104810232B true CN104810232B (zh) 2017-12-29

Family

ID=42664679

Family Applications (3)

Application Number Title Priority Date Filing Date
CN201510084685.7A Active CN104810232B (zh) 2009-05-20 2010-05-19 两次扫描
CN201510083714.8A Active CN104795303B (zh) 2009-05-20 2010-05-19 用于处理图案数据的方法
CN201080032733.3A Active CN102460631B (zh) 2009-05-20 2010-05-19 两次扫描

Family Applications After (2)

Application Number Title Priority Date Filing Date
CN201510083714.8A Active CN104795303B (zh) 2009-05-20 2010-05-19 用于处理图案数据的方法
CN201080032733.3A Active CN102460631B (zh) 2009-05-20 2010-05-19 两次扫描

Country Status (7)

Country Link
US (4) US9691589B2 (enExample)
EP (2) EP3144955A1 (enExample)
JP (3) JP2012527766A (enExample)
KR (3) KR101757837B1 (enExample)
CN (3) CN104810232B (enExample)
TW (1) TWI528411B (enExample)
WO (1) WO2010134026A2 (enExample)

Families Citing this family (84)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5484808B2 (ja) * 2008-09-19 2014-05-07 株式会社ニューフレアテクノロジー 描画装置及び描画方法
CN102460633B (zh) 2009-05-20 2014-12-17 迈普尔平版印刷Ip有限公司 用于光刻系统的图案数据转换器
JP5395551B2 (ja) * 2009-07-22 2014-01-22 日立ビアメカニクス株式会社 描画装置
CN102668015B (zh) * 2009-10-26 2015-06-17 迈普尔平版印刷Ip有限公司 带电粒子多子射束光刻系统、调节装置及其制造方法
JP5709465B2 (ja) * 2010-10-29 2015-04-30 キヤノン株式会社 描画装置、および、物品の製造方法
US9305747B2 (en) * 2010-11-13 2016-04-05 Mapper Lithography Ip B.V. Data path for lithography apparatus
US8884255B2 (en) * 2010-11-13 2014-11-11 Mapper Lithography Ip B.V. Data path for lithography apparatus
WO2012143548A2 (en) 2011-04-22 2012-10-26 Mapper Lithography Ip B.V. Network architecture and protocol for cluster of lithography machines
NL2006868C2 (en) 2011-05-30 2012-12-03 Mapper Lithography Ip Bv Charged particle multi-beamlet apparatus.
US8775517B1 (en) 2011-07-12 2014-07-08 Relationship Science LLC Viewing connectivity between user and entity of an information service
US8717641B2 (en) 2011-07-13 2014-05-06 Hewlett-Packard Development Company, L.P. System and method for edge identification to position components of a scanner
US8699098B2 (en) 2011-07-13 2014-04-15 Hewlett-Packard Development Company, L.P. Scanner gear assembly
JP5848135B2 (ja) * 2012-01-10 2016-01-27 株式会社ニューフレアテクノロジー 荷電粒子ビーム描画方法、荷電粒子ビーム描画プログラムおよび荷電粒子ビーム描画装置
JP6014342B2 (ja) * 2012-03-22 2016-10-25 株式会社ニューフレアテクノロジー マルチ荷電粒子ビーム描画装置及びマルチ荷電粒子ビーム描画方法
US8987689B2 (en) * 2012-05-31 2015-03-24 Taiwan Semiconductor Manufacturing Company, Ltd. Efficient scan for E-beam lithography
US9424372B1 (en) * 2012-06-11 2016-08-23 D2S, Inc. System and method for data path handling, shot count minimization, and proximity effects correction related to mask writing process
JP2014110306A (ja) * 2012-11-30 2014-06-12 Canon Inc 描画装置、および、物品の製造方法
US20140181455A1 (en) * 2012-12-20 2014-06-26 Apple Inc. Category based space allocation for multiple storage devices
EP2757571B1 (en) * 2013-01-17 2017-09-20 IMS Nanofabrication AG High-voltage insulation device for charged-particle optical apparatus
US8941085B2 (en) 2013-03-14 2015-01-27 Taiwan Semiconductor Manufacturing Company, Ltd. Electron beam lithography systems and methods including time division multiplex loading
US9013761B2 (en) 2013-04-16 2015-04-21 Hewlett-Packard Development Company, L.P. Scanner with a scan sensor having a width smaller than the platen
JP6209369B2 (ja) * 2013-06-13 2017-10-04 株式会社ニューフレアテクノロジー マルチ荷電粒子ビーム描画方法及びマルチ荷電粒子ビーム描画装置
JP2015023286A (ja) 2013-07-17 2015-02-02 アイエムエス ナノファブリケーション アーゲー 複数のブランキングアレイを有するパターン画定装置
EP2830083B1 (en) * 2013-07-25 2016-05-04 IMS Nanofabrication AG Method for charged-particle multi-beam exposure
JP2015119043A (ja) * 2013-12-18 2015-06-25 キヤノン株式会社 描画装置、描画方法及び物品の製造方法
JP6215061B2 (ja) * 2014-01-14 2017-10-18 株式会社アドバンテスト 電子ビーム露光装置
US9460260B2 (en) * 2014-02-21 2016-10-04 Mapper Lithography Ip B.V. Enhanced stitching by overlap dose and feature reduction
JP6211435B2 (ja) * 2014-02-26 2017-10-11 株式会社アドバンテスト 半導体装置の製造方法
EP2913838B1 (en) * 2014-02-28 2018-09-19 IMS Nanofabrication GmbH Compensation of defective beamlets in a charged-particle multi-beam exposure tool
EP2937889B1 (en) 2014-04-25 2017-02-15 IMS Nanofabrication AG Multi-beam tool for cutting patterns
EP3358599B1 (en) * 2014-05-30 2021-01-27 IMS Nanofabrication GmbH Compensation of dose inhomogeneity using row calibration
JP6890373B2 (ja) 2014-07-10 2021-06-18 アイエムエス ナノファブリケーション ゲーエムベーハー 畳み込みカーネルを使用する粒子ビーム描画機における結像偏向の補償
WO2016028335A1 (en) * 2014-08-19 2016-02-25 Intel Corporation Corner rounding correction for electron beam (ebeam) direct write system
TWI553609B (zh) * 2014-08-26 2016-10-11 友達光電股份有限公司 顯示裝置及其驅動方法
US9568907B2 (en) 2014-09-05 2017-02-14 Ims Nanofabrication Ag Correction of short-range dislocations in a multi-beam writer
US9653263B2 (en) 2015-03-17 2017-05-16 Ims Nanofabrication Ag Multi-beam writing of pattern areas of relaxed critical dimension
EP3096342B1 (en) 2015-03-18 2017-09-20 IMS Nanofabrication AG Bi-directional double-pass multi-beam writing
JP6587887B2 (ja) * 2015-03-23 2019-10-09 株式会社ニューフレアテクノロジー 荷電粒子ビーム描画装置及び荷電粒子ビーム描画方法
US10410831B2 (en) 2015-05-12 2019-09-10 Ims Nanofabrication Gmbh Multi-beam writing using inclined exposure stripes
US9823573B2 (en) * 2015-07-02 2017-11-21 Applied Materials, Inc. Correction of non-uniform patterns using time-shifted exposures
JP6616986B2 (ja) * 2015-09-14 2019-12-04 株式会社ニューフレアテクノロジー マルチ荷電粒子ビーム描画方法及びマルチ荷電粒子ビーム描画装置
JP2017063101A (ja) * 2015-09-24 2017-03-30 株式会社アドバンテスト 露光装置および露光方法
US9697310B2 (en) * 2015-11-02 2017-07-04 Winbond Electronics Corporation Level faults interception in integrated circuits
US10935962B2 (en) * 2015-11-30 2021-03-02 National Cheng Kung University System and method for identifying root causes of yield loss
JP2016115946A (ja) * 2016-02-18 2016-06-23 株式会社ニューフレアテクノロジー マルチ荷電粒子ビーム描画方法
JP6690984B2 (ja) * 2016-04-15 2020-04-28 株式会社ニューフレアテクノロジー マルチ荷電粒子ビーム露光方法及びマルチ荷電粒子ビームのブランキング装置
US10325756B2 (en) 2016-06-13 2019-06-18 Ims Nanofabrication Gmbh Method for compensating pattern placement errors caused by variation of pattern exposure density in a multi-beam writer
US10444629B2 (en) * 2016-06-28 2019-10-15 D2S, Inc. Bias correction for lithography
JP6589758B2 (ja) 2016-07-04 2019-10-16 株式会社ニューフレアテクノロジー マルチ荷電粒子ビーム描画装置及びマルチ荷電粒子ビーム描画方法
US10522472B2 (en) 2016-09-08 2019-12-31 Asml Netherlands B.V. Secure chips with serial numbers
US20180068047A1 (en) * 2016-09-08 2018-03-08 Mapper Lithography Ip B.V. Method and system for fabricating unique chips using a charged particle multi-beamlet lithography system
NL2019502B1 (en) 2016-09-08 2018-08-31 Mapper Lithography Ip Bv Method and system for fabricating unique chips using a charged particle multi-beamlet lithography system
NL2019503B1 (en) * 2016-09-08 2018-08-31 Mapper Lithography Ip Bv Fabricating unique chips using a charged particle multi-beamlet lithography system
JP7221198B2 (ja) * 2016-09-08 2023-02-13 エーエスエムエル ネザーランズ ビー．ブイ． 荷電粒子マルチビームレットリソグラフィーシステムを使用し、一意的チップを製作すること
US10418324B2 (en) 2016-10-27 2019-09-17 Asml Netherlands B.V. Fabricating unique chips using a charged particle multi-beamlet lithography system
KR102359084B1 (ko) * 2016-12-23 2022-02-07 에이에스엠엘 네델란즈 비.브이. 하전 입자 멀티-빔렛 리소그래피 시스템을 이용한 고유 칩 제조
US10325757B2 (en) * 2017-01-27 2019-06-18 Ims Nanofabrication Gmbh Advanced dose-level quantization of multibeam-writers
JP6665818B2 (ja) * 2017-03-15 2020-03-13 株式会社ニューフレアテクノロジー 荷電粒子ビーム描画方法及び荷電粒子ビーム描画装置
JP6591482B2 (ja) * 2017-05-22 2019-10-16 株式会社東海理化電機製作所 露光方法
JP6449940B2 (ja) * 2017-06-14 2019-01-09 株式会社ニューフレアテクノロジー マルチ荷電粒子ビーム描画方法
US10522329B2 (en) 2017-08-25 2019-12-31 Ims Nanofabrication Gmbh Dose-related feature reshaping in an exposure pattern to be exposed in a multi beam writing apparatus
US11569064B2 (en) 2017-09-18 2023-01-31 Ims Nanofabrication Gmbh Method for irradiating a target using restricted placement grids
JP2019114748A (ja) * 2017-12-26 2019-07-11 株式会社ニューフレアテクノロジー マルチ荷電粒子ビーム描画方法及びマルチ荷電粒子ビーム描画装置
US10651010B2 (en) 2018-01-09 2020-05-12 Ims Nanofabrication Gmbh Non-linear dose- and blur-dependent edge placement correction
US10840054B2 (en) 2018-01-30 2020-11-17 Ims Nanofabrication Gmbh Charged-particle source and method for cleaning a charged-particle source using back-sputtering
US10509328B2 (en) * 2018-04-27 2019-12-17 Applied Materials, Inc. Fabrication and use of dose maps and feature size maps during substrate processing
WO2019238553A1 (en) 2018-06-12 2019-12-19 Asml Netherlands B.V. System and method for scanning a sample using multi-beam inspection apparatus
KR102604859B1 (ko) * 2018-06-19 2023-11-21 에베 그룹 에. 탈너 게엠베하 이미지 포인트 노출 방법 및 장치
JP7189729B2 (ja) * 2018-10-30 2022-12-14 株式会社ニューフレアテクノロジー マルチ荷電粒子ビーム描画装置およびマルチ荷電粒子ビーム描画方法
KR102835338B1 (ko) * 2019-05-03 2025-07-17 아이엠에스 나노패브릭케이션 게엠베하 멀티 빔 라이터에서의 노출 슬롯의 지속 시간 조정
US11099482B2 (en) 2019-05-03 2021-08-24 Ims Nanofabrication Gmbh Adapting the duration of exposure slots in multi-beam writers
CN110335190A (zh) * 2019-06-20 2019-10-15 合肥芯碁微电子装备有限公司 基于cuda的直写式光刻机数据拓展方法
JP7137533B2 (ja) * 2019-06-28 2022-09-14 株式会社荏原製作所 電子ビーム照射装置
JP7316127B2 (ja) * 2019-07-10 2023-07-27 株式会社ニューフレアテクノロジー マルチビーム描画方法及びマルチビーム描画装置
US10921716B1 (en) 2019-10-08 2021-02-16 International Business Machines Corporation Lithographic dose characterization
KR20210099516A (ko) 2020-02-03 2021-08-12 아이엠에스 나노패브릭케이션 게엠베하 멀티―빔 라이터의 블러 변화 보정
JP7421364B2 (ja) * 2020-02-18 2024-01-24 株式会社ニューフレアテクノロジー マルチビーム描画方法及びマルチビーム描画装置
EP4111133A4 (en) * 2020-02-26 2024-11-06 Magic Leap, Inc. PROCEDURAL ELECTRON BEAM LITHOGRAPHY
KR20210132599A (ko) 2020-04-24 2021-11-04 아이엠에스 나노패브릭케이션 게엠베하 대전 입자 소스
US11822232B2 (en) * 2020-07-28 2023-11-21 Synopsys, Inc. Dose information generation and communication for lithography manufacturing systems
KR20230148231A (ko) * 2021-04-09 2023-10-24 가부시키가이샤 니콘 노광 장치 및 배선 패턴 형성 방법
EP4095882A1 (en) * 2021-05-25 2022-11-30 IMS Nanofabrication GmbH Pattern data processing for programmable direct-write apparatus
US12154756B2 (en) 2021-08-12 2024-11-26 Ims Nanofabrication Gmbh Beam pattern device having beam absorber structure
JP2024004285A (ja) * 2022-06-28 2024-01-16 株式会社ニューフレアテクノロジー マルチ荷電粒子ビーム描画方法及びマルチ荷電粒子ビーム描画装置

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6501869B1 (en) * 2000-03-20 2002-12-31 George Mason University Optical switching system
CN1934503A (zh) * 2004-03-23 2007-03-21 先锋株式会社 电子束描绘装置

Family Cites Families (89)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3157308A (en) 1961-09-05 1964-11-17 Clark Mfg Co J L Canister type container and method of making the same
US3159408A (en) 1961-10-05 1964-12-01 Grace W R & Co Chuck
US4063091A (en) * 1976-10-18 1977-12-13 American Optical Corporation High speed switching circuit
US4467211A (en) * 1981-04-16 1984-08-21 Control Data Corporation Method and apparatus for exposing multi-level registered patterns interchangeably between stations of a multi-station electron-beam array lithography (EBAL) system
US4430571A (en) * 1981-04-16 1984-02-07 Control Data Corporation Method and apparatus for exposing multi-level registered patterns interchangeably between stations of a multi-station electron-beam array lithography (EBAL) system
JPS58127324A (ja) 1982-01-25 1983-07-29 Toshiba Corp 電子ビ−ム露光装置の描画デ−タ作成装置
US4524308A (en) 1984-06-01 1985-06-18 Sony Corporation Circuits for accomplishing electron beam convergence in color cathode ray tubes
JPS61125126A (ja) * 1984-11-22 1986-06-12 Toshiba Mach Co Ltd 電子ビ−ム露光装置
DE3571290D1 (en) 1984-11-22 1989-08-03 Toshiba Machine Co Ltd A system for continuously exposing desired patterns and their backgrounds on a target surface
US5051844A (en) * 1989-01-30 1991-09-24 Eastman Kodak Company Digital halftoning with error diffusion
US5384463A (en) 1991-06-10 1995-01-24 Fujisu Limited Pattern inspection apparatus and electron beam apparatus
JP3145491B2 (ja) * 1992-01-31 2001-03-12 富士通株式会社 電子ビーム装置
US5363213A (en) 1992-06-08 1994-11-08 Xerox Corporation Unquantized resolution conversion of bitmap images using error diffusion
JP3086068B2 (ja) 1992-06-15 2000-09-11 富士通株式会社 パターン形状を検査する方法
AU6449994A (en) 1993-04-30 1994-11-21 Board Of Regents, The University Of Texas System Megavoltage scanning imager and method for its use
EP0766405A1 (en) 1995-09-29 1997-04-02 STMicroelectronics S.r.l. Successive approximation register without redundancy
US6133986A (en) 1996-02-28 2000-10-17 Johnson; Kenneth C. Microlens scanner for microlithography and wide-field confocal microscopy
JP3854640B2 (ja) * 1996-03-06 2006-12-06 株式会社 日立製作所 半導体素子製造方法
JPH10145592A (ja) * 1996-10-10 1998-05-29 Hewlett Packard Co <Hp> 濃淡画像の生成方法および生成装置
US5847959A (en) * 1997-01-28 1998-12-08 Etec Systems, Inc. Method and apparatus for run-time correction of proximity effects in pattern generation
JPH10289861A (ja) * 1997-04-16 1998-10-27 Nikon Corp マスクパターン形成方法
SE9800665D0 (sv) * 1998-03-02 1998-03-02 Micronic Laser Systems Ab Improved method for projection printing using a micromirror SLM
JPH11317352A (ja) 1998-03-02 1999-11-16 Nikon Corp 荷電粒子線露光装置
US6941006B1 (en) * 1998-03-05 2005-09-06 Dupont Photomasks, Inc. Method and system for calibrating the scan amplitude of an electron beam lithography instrument
US6288406B1 (en) 1998-03-06 2001-09-11 Dupont Photomasks, Inc. Electron beam lithography system having variable writing speed
JP2000043317A (ja) * 1998-07-29 2000-02-15 Dainippon Screen Mfg Co Ltd マルチビーム描画方法および装置
CN1173550C (zh) * 1998-12-25 2004-10-27 佳能精技股份有限公司 用于图像处理的方法与装置
US6556702B1 (en) * 1999-01-06 2003-04-29 Applied Materials, Inc. Method and apparatus that determines charged particle beam shape codes
JP2000260686A (ja) * 1999-03-08 2000-09-22 Toshiba Corp 露光方法及び露光装置
WO2001035165A1 (en) * 1999-11-07 2001-05-17 Ion Diagnostics, Inc. Data path design for multiple electron beam lithography system
US6570155B1 (en) * 2000-04-11 2003-05-27 Applied Materials, Inc. Bi-directional electron beam scanning apparatus
US6537738B1 (en) 2000-08-08 2003-03-25 Ball Semiconductor, Inc. System and method for making smooth diagonal components with a digital photolithography system
US7064869B2 (en) 2001-06-22 2006-06-20 Eastman Kodak Company Method for halftoning a multi-channel digital color image having at least one group of similar color channels
US6778258B2 (en) 2001-10-19 2004-08-17 Asml Holding N.V. Wafer handling system for use in lithography patterning
SE0104238D0 (sv) 2001-12-14 2001-12-14 Micronic Laser Systems Ab Method and apparatus for patterning a workpiece
US6768125B2 (en) 2002-01-17 2004-07-27 Ims Nanofabrication, Gmbh Maskless particle-beam system for exposing a pattern on a substrate
US6919952B2 (en) * 2002-03-19 2005-07-19 Mapper Lithography Ip B.V. Direct write lithography system
JP3966211B2 (ja) 2002-05-08 2007-08-29 株式会社ニコン 露光方法、露光装置及びデバイス製造方法
US7116447B2 (en) 2002-05-24 2006-10-03 Eastman Kodak Company Halftone dot-growth technique using a dot edge-detection scheme
CN1695150B (zh) * 2002-10-01 2011-06-15 麦克罗尼克激光系统公司 用于过程控制拐点特征修饰的方法和系统
KR101060557B1 (ko) * 2002-10-25 2011-08-31 마퍼 리쏘그라피 아이피 비.브이. 리소그라피 시스템
KR101077098B1 (ko) 2002-10-30 2011-10-26 마퍼 리쏘그라피 아이피 비.브이. 전자 빔 노출 시스템
WO2004061609A2 (en) * 2002-12-30 2004-07-22 Mark Yuk-Lun Wong Multi-display architecture using single video controller
US7359091B2 (en) * 2003-01-15 2008-04-15 Xerox Corporation Multi-bit output sampled threshold array halftoner
JP4365594B2 (ja) * 2003-01-27 2009-11-18 シャープ株式会社 パターン形成方法、薄膜トランジスタ基板の製造方法、液晶表示装置の製造方法、及び露光マスク
KR101068607B1 (ko) 2003-03-10 2011-09-30 마퍼 리쏘그라피 아이피 비.브이. 복수 개의 빔렛 발생 장치
JP4949843B2 (ja) 2003-05-28 2012-06-13 マッパー・リソグラフィー・アイピー・ビー．ブイ． 荷電粒子ビームレット露光システム
SG118283A1 (en) 2003-06-20 2006-01-27 Asml Netherlands Bv Lithographic apparatus and device manufacturing method
WO2005010618A2 (en) 2003-07-30 2005-02-03 Mapper Lithography Ip B.V. Modulator circuitry
JP4313145B2 (ja) * 2003-10-07 2009-08-12 株式会社日立ハイテクノロジーズ 荷電粒子ビーム描画方法及び荷電粒子ビーム描画装置
GB2414111B (en) 2004-04-30 2010-01-27 Ims Nanofabrication Gmbh Advanced pattern definition for particle-beam processing
US7075093B2 (en) * 2004-05-12 2006-07-11 Gorski Richard M Parallel multi-electron beam lithography for IC fabrication with precise X-Y translation
JP4159512B2 (ja) 2004-05-31 2008-10-01 日本電気株式会社 画像パターン補正方法、及びそれを適用した模擬画像生成方法、並びにパターン外観検査方法
EP1612835A1 (en) 2004-06-29 2006-01-04 Leica Microsystems Lithography GmbH Method for Reducing the Fogging Effect
JP4634076B2 (ja) 2004-06-30 2011-02-16 キヤノン株式会社 荷電粒子線露光装置及びデバイス製造方法
US7477772B2 (en) * 2005-05-31 2009-01-13 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method utilizing 2D run length encoding for image data compression
JP4585926B2 (ja) * 2005-06-17 2010-11-24 株式会社日立ハイテクノロジーズ パターンレイヤーデータ生成装置、それを用いたパターンレイヤーデータ生成システム、半導体パターン表示装置、パターンレイヤーデータ生成方法、及びコンピュータプログラム
US7706607B2 (en) 2005-06-23 2010-04-27 Microsoft Corporation Optimized color image encoding and decoding using color space parameter data
ATE537550T1 (de) * 2005-07-08 2011-12-15 Nexgen Semi Holding Inc Vorrichtung und verfahren zur kontrollierten fertigung von halbleitern mittels teilchenstrahlen
US8890095B2 (en) * 2005-07-25 2014-11-18 Mapper Lithography Ip B.V. Reliability in a maskless lithography system
JP5663717B2 (ja) * 2005-09-06 2015-02-04 カール ツァイス マイクロスコピー ゲーエムベーハーＣａｒｌ Ｚｅｉｓｓ Ｍｉｃｒｏｓｃｏｐｙ Ｇｍｂｈ 荷電粒子システム
US7868300B2 (en) * 2005-09-15 2011-01-11 Mapper Lithography Ip B.V. Lithography system, sensor and measuring method
US7709815B2 (en) 2005-09-16 2010-05-04 Mapper Lithography Ip B.V. Lithography system and projection method
US7244953B2 (en) * 2005-10-03 2007-07-17 Applied Materials, Inc. Beam exposure writing strategy system and method
EP1777730B1 (en) * 2005-10-19 2018-05-30 ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH Arrangement and method for compensating emitter tip vibrations
TWI432908B (zh) 2006-03-10 2014-04-01 Mapper Lithography Ip Bv 微影系統及投射方法
US7774287B2 (en) 2006-03-14 2010-08-10 Asml Netherlands B.V. System and method for moving a component through a setpoint profile, lithographic apparatus and device manufacturing method
KR101585370B1 (ko) 2006-08-31 2016-01-14 가부시키가이샤 니콘 이동체 구동 방법 및 이동체 구동 시스템, 패턴 형성 방법 및 장치, 노광 방법 및 장치, 그리고 디바이스 제조 방법
US7704653B2 (en) 2006-10-25 2010-04-27 Kla-Tencor Corporation Method of data encoding, compression, and transmission enabling maskless lithography
US8009269B2 (en) 2007-03-14 2011-08-30 Asml Holding N.V. Optimal rasterization for maskless lithography
JP2009122217A (ja) 2007-11-13 2009-06-04 Fujifilm Corp 電子ビーム描画方法、微細パターン描画システムおよび凹凸パターン担持体
US8445869B2 (en) 2008-04-15 2013-05-21 Mapper Lithography Ip B.V. Projection lens arrangement
WO2009106397A1 (en) 2008-02-26 2009-09-03 Mapper Lithography Ip B.V. Projection lens arrangement
US8089056B2 (en) 2008-02-26 2012-01-03 Mapper Lithography Ip B.V. Projection lens arrangement
US8018623B2 (en) * 2008-02-29 2011-09-13 Eastman Kodak Company Multi-level halftoning providing reduced error diffusion artifacts
JP2009237001A (ja) 2008-03-26 2009-10-15 Fujifilm Corp 電子ビーム描画方法、微細パターン描画システム、凹凸パターン担持体の製造方法および磁気ディスク媒体の製造方法
WO2009141428A1 (en) 2008-05-23 2009-11-26 Mapper Lithography Ip B.V. Imaging system
JP5743886B2 (ja) 2008-06-04 2015-07-01 マッパー・リソグラフィー・アイピー・ビー．ブイ． ターゲットを露光するための方法およびシステム
TWI479530B (zh) 2008-10-01 2015-04-01 Mapper Lithography Ip Bv 靜電透鏡結構、靜電透鏡陣列、帶電粒子的子束微影系統以及製造絕緣結構的方法
CN102460633B (zh) * 2009-05-20 2014-12-17 迈普尔平版印刷Ip有限公司 用于光刻系统的图案数据转换器
EP2433294B1 (en) * 2009-05-20 2016-07-27 Mapper Lithography IP B.V. Method of generating a two-level pattern for lithographic processing and pattern generator using the same
WO2011155122A1 (ja) 2010-06-07 2011-12-15 株式会社 日立ハイテクノロジーズ 回路パターン検査装置およびその検査方法
US9305747B2 (en) * 2010-11-13 2016-04-05 Mapper Lithography Ip B.V. Data path for lithography apparatus
WO2012062931A1 (en) * 2010-11-13 2012-05-18 Mapper Lithography Ip B.V. Method for determining a distance between two beamlets in a multi-beamlet exposure apparatus
US8584057B2 (en) * 2012-03-01 2013-11-12 Taiwan Semiconductor Manufacturing Copmany, Ltd. Non-directional dithering methods
JP2014007327A (ja) * 2012-06-26 2014-01-16 Canon Inc 描画装置、および物品の製造方法
EP2830083B1 (en) * 2013-07-25 2016-05-04 IMS Nanofabrication AG Method for charged-particle multi-beam exposure
JP6352529B2 (ja) 2015-04-03 2018-07-04 株式会社日立ハイテクノロジーズ 光量検出装置、それを用いた免疫分析装置および荷電粒子線装置
US12259108B2 (en) 2021-03-08 2025-03-25 Innotec, Corp. Light projector with overmolding to improve accuracy between light source, aperture, and lens

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6501869B1 (en) * 2000-03-20 2002-12-31 George Mason University Optical switching system
CN1934503A (zh) * 2004-03-23 2007-03-21 先锋株式会社 电子束描绘装置

Also Published As

Publication number Publication date
CN104795303A (zh) 2015-07-22
TWI528411B (zh) 2016-04-01
WO2010134026A2 (en) 2010-11-25
JP2012527766A (ja) 2012-11-08
JP6125562B2 (ja) 2017-05-10
WO2010134026A3 (en) 2011-01-13
CN102460631B (zh) 2015-03-25
JP2015181179A (ja) 2015-10-15
EP2433295A2 (en) 2012-03-28
US20140264066A1 (en) 2014-09-18
TW201123253A (en) 2011-07-01
KR20160083959A (ko) 2016-07-12
US20120286170A1 (en) 2012-11-15
US20140264085A1 (en) 2014-09-18
KR101854828B1 (ko) 2018-05-04
WO2010134026A4 (en) 2011-04-21
KR20170084348A (ko) 2017-07-19
EP3144955A1 (en) 2017-03-22
US10297420B2 (en) 2019-05-21
US20140264086A1 (en) 2014-09-18
US9691589B2 (en) 2017-06-27
CN104810232A (zh) 2015-07-29
US9978562B2 (en) 2018-05-22
CN102460631A (zh) 2012-05-16
CN104795303B (zh) 2017-12-05
KR20120036876A (ko) 2012-04-18
KR101757837B1 (ko) 2017-07-26
US10692696B2 (en) 2020-06-23
JP2017168848A (ja) 2017-09-21
KR101636523B1 (ko) 2016-07-06

Similar Documents

Publication Publication Date Title
CN104810232B (zh) 两次扫描
KR101614460B1 (ko) 리소그래피 시스템을 위한 패턴 데이터 전환
JP7178841B2 (ja) 限定的位置付けグリッドを用いるターゲットの照射方法
CN108608724A (zh) 一种无网结网版设计方法
US12040157B2 (en) Pattern data processing for programmable direct-write apparatus
TWI547766B (zh) 多調柵格化
TWI515759B (zh) 用於帶電粒子微影設備的數據途徑
US9984853B2 (en) Method for generating writing data
JP6548982B2 (ja) 描画データの作成方法
TW201123254A (en) Cell based vector format
CN106527058B (zh) 一种倾斜式扫描中数据移位的方法
CN105204298A (zh) 一种用于直写式光刻机图形发生器的凹四边形fpga硬件填充方法
Krecinic et al. Data path development for multiple electron beam maskless lithography

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
EXSB Decision made by sipo to initiate substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant
TR01 Transfer of patent right
TR01 Transfer of patent right

Effective date of registration: 20190529

Address after: Holland Weide Eindhoven

Patentee after: ASML Holland Co., Ltd.

Address before: About Holland

Patentee before: Mapper Lithography IP B. V.