CN104756268B - 用于形成热电装置的系统和方法 - Google Patents

用于形成热电装置的系统和方法 Download PDF

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Publication number
CN104756268B
CN104756268B CN201380054288.4A CN201380054288A CN104756268B CN 104756268 B CN104756268 B CN 104756268B CN 201380054288 A CN201380054288 A CN 201380054288A CN 104756268 B CN104756268 B CN 104756268B
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substrate
etch
mask
etchant
layer
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Chinese (zh)
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CN104756268A (zh
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阿克拉姆·I·布卡伊
道格拉斯·W·谭
亚当·霍普金斯
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Silicium Energy Inc
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Silicium Energy Inc
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/10—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects operating with only the Peltier or Seebeck effects
    • H10N10/17—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects operating with only the Peltier or Seebeck effects characterised by the structure or configuration of the cell or thermocouple forming the device
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/01—Manufacture or treatment
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
  • Drying Of Semiconductors (AREA)
  • Measuring Temperature Or Quantity Of Heat (AREA)
CN201380054288.4A 2012-08-17 2013-08-16 用于形成热电装置的系统和方法 Expired - Fee Related CN104756268B (zh)

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US201261684681P 2012-08-17 2012-08-17
US61/684,681 2012-08-17
PCT/US2013/055462 WO2014028903A1 (en) 2012-08-17 2013-08-16 Systems and methods for forming thermoelectric devices

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CN104756268A CN104756268A (zh) 2015-07-01
CN104756268B true CN104756268B (zh) 2017-10-24

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US (1) US9515246B2 (enExample)
EP (1) EP2885823B1 (enExample)
JP (1) JP6353447B2 (enExample)
KR (1) KR20150086466A (enExample)
CN (1) CN104756268B (enExample)
WO (1) WO2014028903A1 (enExample)

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WO2021079733A1 (ja) * 2019-10-25 2021-04-29 パナソニックＩｐマネジメント株式会社 熱電変換装置、熱電変換装置の制御方法、熱電変換装置を用いて対象物を冷却及び／又は加熱する方法及び電子デバイス
JP7656866B2 (ja) * 2019-10-25 2025-04-04 パナソニックＩｐマネジメント株式会社 熱電変換装置、熱電変換装置の制御方法、熱電変換装置を用いて対象物を冷却及び／又は加熱する方法及び電子デバイス
US20230411178A1 (en) * 2020-10-29 2023-12-21 Board Of Regents, The University Of Texas System Equipment and process technologies for catalyst influenced chemical etching
JP7567547B2 (ja) * 2021-02-19 2024-10-16 Ａｇｃ株式会社 凹部を有するケイ素含有部材の製造方法
KR102844548B1 (ko) * 2022-12-20 2025-08-08 세메스 주식회사 금속촉매를 이용한 화학적 식각 방법
KR102871003B1 (ko) * 2023-11-06 2025-10-15 한국재료연구원 P-형 열전소재 에칭용 조성물 및 이를 이용한 열전소재의 에칭방법

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EP2885823A4 (en) 2016-03-30
EP2885823A1 (en) 2015-06-24
US9515246B2 (en) 2016-12-06
JP2015530743A (ja) 2015-10-15
US20150228883A1 (en) 2015-08-13
WO2014028903A1 (en) 2014-02-20
KR20150086466A (ko) 2015-07-28
EP2885823B1 (en) 2018-05-02
JP6353447B2 (ja) 2018-07-04
CN104756268A (zh) 2015-07-01

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