CN104703406A - 电子部件安装装置及具备电子部件安装装置的半导体装置 - Google Patents

电子部件安装装置及具备电子部件安装装置的半导体装置 Download PDF

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CN104703406A
CN104703406A CN201410747912.5A CN201410747912A CN104703406A CN 104703406 A CN104703406 A CN 104703406A CN 201410747912 A CN201410747912 A CN 201410747912A CN 104703406 A CN104703406 A CN 104703406A
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metal pattern
electronic unit
type electronic
insulated substrate
melf type
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CN104703406B (zh
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小原太一
米山玲
大月高实
舌间英树
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Mitsubishi Electric Corp
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Abstract

目的在于提供一种能够抑制MELF型电子部件的位置偏移,并且降低施加至MELF型电子部件的热应力的技术。电子部件安装装置(1)具有:绝缘基板(13),其形成有金属图案(13b);以及MELF型电子部件(14)。MELF型电子部件(14)与第1容纳部(13c)嵌合,该第1容纳部(13c)由金属图案(13b)和从金属图案(13b)的缺损部露出的绝缘基板(13)构成。电子部件安装装置(1)还具有导电性部件(15),其形成于MELF型电子部件(14)和金属图案(13b)之间,在MELF型电子部件(14)和绝缘基板(13)之间不形成导电性部件(15)。

Description

电子部件安装装置及具备电子部件安装装置的半导体装置
技术领域
本发明涉及在绝缘基板安装有MELF型电子部件的电子部件安装装置、以及具备电子部件安装装置的半导体装置。
背景技术
当前,对将MELF型电子部件安装于安装基板上时的位置偏移进行抑制的技术提出有多种方案。例如,在专利文献1公开的技术中,通过形成U字型(コ字型)的导电电极,从而能抑制所述的位置偏移,其中,所述U字型的导电电极具有比MELF型电子部件的直径大的内侧尺寸。
专利文献1:日本特开2006-32511号公报
通常,如果由于使用安装于安装基板上的电子部件或半导体元件等而发热,则该热量传递至安装基板,在安装基板产生热应力而使安装基板发生翘曲。但是,在专利文献1的技术中,焊料等导电性部件以漫入至MELF型电子部件的下侧的方式进行设置,因此,MELF型电子部件与安装基板牢固地接合。因此,安装基板的热应力相对较大地施加至MELF型电子部件,其结果,有时对MELF型电子部件产生不良影响。
特别地,在安装基板采用陶瓷基板,在该陶瓷基板上安装发热量较大的电力开关元件等电力半导体元件(功率半导体元件)的情况下,可以认为会向MELF型电子部件施加更显著的热应力。
发明内容
因此,本发明就是鉴于上述问题而提出的,其目的在于提供一种能够抑制MELF型电子部件的位置偏移,并且降低施加至MELF型电子部件的热应力的技术。
本发明涉及的电子部件安装装置具备:绝缘基板,其形成有金属图案;以及MELF型电子部件。所述MELF型电子部件与第1容纳部或第2容纳部嵌合,其中,该第1容纳部由所述金属图案和从所述金属图案的缺损部露出的所述绝缘基板构成,该第2容纳部由在通过所述金属图案的缺损部分离开的所述金属图案的彼此相对的侧部的上部所形成的凹陷构成。所述电子部件安装装置还具有导电性部件,该导电性部件形成于所述MELF型电子部件和所述金属图案之间,所述导电性部件不形成于所述MELF型电子部件和所述绝缘基板之间。
发明的效果
根据本发明,由于MELF型电子部件与第1容纳部或第2容纳部嵌合,因此能够抑制绝缘基板和MELF型电子部件之间的位置偏移。另外,由于没有在MELF型电子部件和绝缘基板之间形成导电性部件,因此能够提高MELF型电子部件与绝缘基板之间的柔性。因此,能够降低从绝缘基板向MELF型电子部件施加的热应力。
附图说明
图1是表示实施方式1所涉及的半导体装置的结构的俯视图。
图2表示实施方式1所涉及的半导体装置的结构,是沿着A1-A1线的剖面图。
图3表示实施方式1所涉及的半导体装置的结构,是沿着B1-B1线的剖面图。
图4是表示实施方式2所涉及的半导体装置的结构的俯视图。
图5表示实施方式2所涉及的半导体装置的结构,是沿着A2-A2线的剖面图。
图6表示实施方式2所涉及的半导体装置的结构,是沿着B2-B2线的剖面图。
图7是表示实施方式3所涉及的半导体装置的结构的俯视图。
图8表示实施方式3所涉及的半导体装置的结构,是沿着A3-A3线的剖面图。
图9表示实施方式3所涉及的半导体装置的结构,是沿着B3-B3线的剖面图。
图10是表示实施方式4所涉及的半导体装置的结构的俯视图。
图11表示实施方式4所涉及的半导体装置的结构,是沿着A4-A4线的剖面图。
图12表示实施方式4所涉及的半导体装置的结构,是沿着B4-B4线的剖面图。
图13是表示实施方式5所涉及的半导体装置的结构的俯视图。
图14表示实施方式5所涉及的半导体装置的结构,是沿着A5-A5线的剖面图。
图15表示实施方式5所涉及的半导体装置的结构,是沿着B5-B5线的剖面图。
标号的说明
1电子部件安装装置、13绝缘基板、13b金属图案、13c第1容纳部、13d侧部、13e第2容纳部、13f切口部、14 MELF型电子部件、15导电性部件、31电力半导体元件。
具体实施方式
(实施方式1)
图1是表示本发明的实施方式1所涉及的半导体装置的结构的俯视图,图2是沿着图1的A1-A1线示出该结构的剖面图,图3是沿着图1的B1-B1线示出该结构的剖面图。
如图1~图3所示,本实施方式1所涉及的半导体装置具有:电子部件安装装置1;电力半导体元件31;以及焊料32。电子部件安装装置1具有:基座板11;焊料12;绝缘基板13;MELF型电子部件14;以及导电性部件15。
在绝缘基板13的背面(图2、图3的下表面)形成有通过焊料12而与基座板11接合的背面金属图案13a。另一方面,在绝缘基板13的正面(图2、图3的上表面)形成有金属图案13b。电力半导体元件31经由金属图案13b和焊料32安装到绝缘基板13上。
下面,关于基座板11的材质,假设为含有Cu而进行说明,但并不限定于此,只要能够满足散热性,也可以含有其他金属(例如Al)。另外,关于绝缘基板13的材质,假设为含有AlN等陶瓷而进行说明,但并不限定于此,只要能够满足绝缘性和散热性,也可以含有例如Al2O3、Si3N4、BN等陶瓷。另外,关于背面金属图案13a和金属图案13b的材质,假设为含有Cu而进行说明,但并不限定于此,也可以含有其他具有导电性且能进行接合的金属(例如Al)。
如图1~图3所示,由金属图案13b和从金属图案13b的缺损部露出的绝缘基板13,形成有第1容纳部13c。在本实施方式1中,通过金属图案13b的缺损部从金属图案13b的-y侧端延伸设置至+y侧端,从而将金属图案13b分离成-x侧和+x侧。并且,通过金属图案13b的缺损部从金属图案13b的-x侧端延伸设置至+x侧端,从而将金属图案13b分离成-y侧和+y侧。由此,在俯视观察时,金属图案13b通过所述缺损部以十字形切开,分离成4个。并且,由该分离后的金属图案13b的彼此相对的侧部13d、和从金属图案13b的缺损部露出的绝缘基板13,形成有第1容纳部13c。
MELF型电子部件14例如是MELF型的电阻元件或MELF型的二极管,呈圆柱形状。下面,在MELF型电子部件14中,将与呈圆形的两个面垂直的方向记为“延伸方向”。
如图1~图3所示,MELF型电子部件14在将其延伸方向与x方向对齐的状态下,与第1容纳部13c嵌合。在这里,与MELF型电子部件14嵌合的第1容纳部13c形成为具有比MELF型电子部件14的直径宽的宽度,MELF型电子部件14的大于或等于一半的部分嵌合至第1容纳部13c内。
导电性部件15例如是焊料或银膏等接合部件,形成于MELF型电子部件14和金属图案13b之间。在本实施方式1中,在MELF型电子部件14的曲面和绝缘基板13接触的状态下,导电性部件15将MELF型电子部件14、与所述4个金属图案13b各自的侧部13d接合。由此,4个金属图案13b经由MELF型电子部件14电连接。
另一方面,在MELF型电子部件14和绝缘基板13之间不形成导电性部件15。对于按照上述方式形成导电性部件15这一点,例如能够通过导电性部件15使用粘性尽可能高的材料、或者形成后述的实施方式5的切口部13f而实现。
在如上所述的本实施方式1所涉及的半导体装置(电子部件安装装置1)中,由于MELF型电子部件14与第1容纳部13c嵌合,因此能够抑制绝缘基板13和MELF型电子部件14之间的位置偏移。另外,由于在MELF型电子部件14与绝缘基板13之间不形成导电性部件15,因此能够提高MELF型电子部件14与绝缘基板13之间的柔性,能够使导电性部件15易于吸收从绝缘基板13传递向MELF型电子部件14的热应力。由此,能够降低施加至MELF型电子部件14的热应力,因而能够实现可靠性高的半导体装置(电子部件安装装置1)。
另外,上述效果在如本实施方式1所示,在绝缘基板13上安装发热量较大的电力半导体元件31的情况下特别有效。另外,电力半导体元件31的材料优选含有宽带隙半导体(例如SiC或GaN等)。在按照上述方式构成的情况下,能够实现耐热性能优异的装置。
(实施方式2)
图4是表示本发明的实施方式2所涉及的半导体装置的结构的俯视图,图5是沿着图4的A2-A2线示出该结构的剖面图,图6是沿着图4的B2-B2线示出该结构的剖面图。另外,在本实施方式2所涉及的半导体装置中,对于与以上说明的结构要素相同或相似的要素标注相同的参照标号,下面以不同点为中心进行说明。
如图4~图6所示,在本实施方式2中,与实施方式1同样地,由金属图案13b和从金属图案13b的缺损部露出的绝缘基板13,形成有第1容纳部13c。但是,本实施方式2与实施方式1的不同之处在于,通过金属图案13b的缺损部从金属图案13b的-y侧端延伸设置至+y侧端,从而将金属图案13b分离成-x侧和+x侧。并且,金属图案13b的缺损部从-x侧的金属图案13b的+x侧端朝向-x侧延伸设置至中途为止,并且从+x侧的金属图案13b的-x侧端朝向+x侧延伸设置至中途为止。由此,在俯视观察时,金属图案13b通过所述缺损部以十字形切开,分离成2个。并且,由该分离后的金属图案13b的彼此相对的侧部13d、和从金属图案13b的缺损部露出的绝缘基板13,形成有第1容纳部(金属切口部)13c。
MELF型电子部件14在将其延伸方向与x方向对齐的状态下,与第1容纳部13c嵌合。在这里,与MELF型电子部件14嵌合的第1容纳部(金属切口部)13c形成为具有比MELF型电子部件14的直径窄的宽度,MELF型电子部件14的小于或等于一半的下部嵌合至第1容纳部(金属切口部)13c内。
在本实施方式2中,与实施方式1同样地,导电性部件15形成于MELF型电子部件14和金属图案13b之间,而不形于MELF型电子部件14和绝缘基板13之间。但是,本实施方式2与实施方式1的不同之处在于,在MELF型电子部件14和绝缘基板13之间设置有空隙的状态下,导电性部件15将MELF型电子部件14、与所述2个金属图案13b各自的2个侧部13d及其上部接合。由此,2个金属图案13b经由MELF型电子部件14电连接。
在以上所述的本实施方式2所涉及的半导体装置(电子部件安装装置1)中,在MELF型电子部件14和绝缘基板13之间设置有空隙的状态下,导电性部件15将MELF型电子部件14、与金属图案13b的侧部13d及其上部接合。由此,能够进一步提高MELF型电子部件14和绝缘基板13之间的柔性,所以能够降低施加至MELF型电子部件14的热应力。因此,能够实现可靠性更高的半导体装置(电子部件安装装置1)。
(实施方式3)
图7是表示本发明的实施方式3所涉及的半导体装置的结构的俯视图,图8是沿着图7的A3-A3线示出该结构的剖面图,图9是沿着图7的B3-B3线示出该结构的剖面图。另外,在本实施方式3所涉及的半导体装置中,对于与以上说明的结构要素相同或相似的要素标注相同的参照标号,下面以不同点为中心进行说明。
如图7~图9所示,在本实施方式3中,与实施方式1同样地,由金属图案13b和从金属图案13b的缺损部露出的绝缘基板13,形成有第1容纳部13c。并且,在俯视观察时,通过所述缺损部以十字形切开而分离成4个,由该分离后的金属图案13b的彼此相对的侧部13d和从金属图案13b露出的绝缘基板13,形成有第1容纳部(狭缝)13c。
MELF型电子部件14在将其延伸方向与x方向对齐的状态下,与第1容纳部13c嵌合。在这里,与MELF型电子部件14嵌合的第1容纳部(狭缝)13c形成为具有比MELF型电子部件14的直径窄的宽度,MELF型电子部件14的小于或等于一半的下部嵌合至第1容纳部(狭缝)13c内。
在本实施方式3中,与实施方式2同样地,导电性部件15形成于MELF型电子部件14和金属图案13b之间,而不形成于MELF型电子部件14和绝缘基板13之间。并且,在MELF型电子部件14和绝缘基板13之间设置有空隙的状态下,导电性部件15将MELF型电子部件14、与所述4个金属图案13b各自的侧部13d及其上部接合。由此,4个金属图案13b经由MELF型电子部件14电连接。
在如上所述的本实施方式3所涉及的半导体装置(电子部件安装装置1)中,在MELF型电子部件14和绝缘基板13之间设置有空隙的状态下,导电性部件15将MELF型电子部件14、与金属图案13b的侧部13d及其上部接合。由此,与实施方式2同样地,能够降低施加至MELF型电子部件14的热应力,所以能够实现可靠性更高的半导体装置(电子部件安装装置1)。另外,本实施方式3所涉及的第1容纳部(狭缝)13c能够比实施方式2所涉及的第1容纳部(金属切口部)13c更简单地形成,因而能够容易地形成半导体装置(电子部件安装装置1)。
(实施方式4)
图10是表示本发明的实施方式4所涉及的半导体装置的结构的俯视图,图11是沿着图10的A4-A4线示出该结构的剖面图,图12是沿着图10的B4-B4线示出该结构的剖面图。另外,在本实施方式4所涉及的半导体装置中,对于与以上说明的结构要素相同或相似的要素标注相同的参照标号,下面以不同点为中心进行说明。
在本实施方式4中,金属图案13b通过金属图案13b的缺损部分离成2个。如图12所示,在一个金属图案13b的与另一个金属图案13b相对的侧部13d的上部、以及另一个金属图案13b的与一个金属图案13b相对的侧部13d的上部分别形成有凹陷(台阶部),由该凹陷构成第2容纳部13e。第2容纳部13e的凹陷例如形成为具有与MELF型电子部件14的曲面形状相同或类似的形状。
在本实施方式4中,与实施方式1同样地,导电性部件15形成于MELF型电子部件14和金属图案13b之间,而不形成于MELF型电子部件14和绝缘基板13之间。但是,本实施方式4与实施方式1的不同之处在于,在MELF型电子部件14和绝缘基板13之间设置有空隙的状态下,导电性部件15将MELF型电子部件14、与所述2个金属图案13b各自的凹陷的内部接合。由此,2个金属图案13b经由MELF型电子部件14电连接。
根据如上所述的本实施方式4所涉及的半导体装置(电子部件安装装置1),能够获得与实施方式1同样的效果。另外,与将MELF型电子部件14向实施方式1~3中所说明的第1容纳部13c嵌合相比,在与第2容纳部13e嵌合的情况下,易于使MELF型电子部件14的位置与设计上的位置相吻合。因此,根据本实施方式4,能够提高安装MELF型电子部件14的位置精度。
(实施方式5)
图13是表示本发明的实施方式5所涉及的半导体装置的结构的俯视图,图14是沿着图13的A5-A5线示出该结构的剖面图,图15是沿着图13的B5-B5线示出该结构的剖面图。另外,在本实施方式5所涉及的半导体装置中,对于与以上说明的结构要素相同或相似的要素标注相同的参照标号,下面以不同点为中心进行说明。
如图13~15所示,在本实施方式5中,在位于多个导电性部件15之间的绝缘基板13的正面上形成有切口部13f。在这里,切口部13f形成为将多个导电性部件15彼此隔开。
根据如上所述的本实施方式5所涉及的半导体装置(电子部件安装装置1),能够获得与实施方式1同样的效果。另外,在例如导电性部件15是焊料的情况下,能够通过切口部13f,抑制焊料球或者焊料桥。因此,能够改善成品率。另外,通过在绝缘基板13形成切口部13f,从而能够减少绝缘基板13所需材料的使用量,因此能够期待低成本化。
另外,本发明在其发明的范围内,能够将各实施方式自由组合、或者将各实施方式适当地变形、省略。

Claims (9)

1.一种电子部件安装装置,其具有:
绝缘基板,其形成有金属图案;以及
MELF型电子部件,
所述MELF型电子部件与第1容纳部或第2容纳部嵌合,其中,该第1容纳部由所述金属图案和从所述金属图案的缺损部露出的所述绝缘基板构成,该第2容纳部由在通过所述金属图案的缺损部分离开的所述金属图案的彼此相对的侧部的上部所形成的凹陷构成,
该电子部件安装装置还具有导电性部件,该导电性部件形成于所述MELF型电子部件和所述金属图案之间,
所述导电性部件不形成于所述MELF型电子部件和所述绝缘基板之间。
2.根据权利要求1所述的电子部件安装装置,其中,
所述第1容纳部由在俯视观察时被十字形地切开而分离成4个的所述金属图案的彼此相对的侧部、和从所述金属图案的所述缺损部露出的所述绝缘基板形成,
所述导电性部件在所述MELF型电子部件和所述绝缘基板接触的状态下,将所述MELF型电子部件与所述金属图案的所述侧部接合。
3.根据权利要求1所述的电子部件安装装置,其中,
所述导电性部件在所述MELF型电子部件和所述绝缘基板之间设置有空隙的状态下,将所述MELF型电子部件与所述金属图案接合。
4.根据权利要求3所述的电子部件安装装置,其中,
所述第1容纳部由在俯视观察时被十字形地切开而分离成2个的所述金属图案的彼此相对的侧部、和从所述金属图案的所述缺损部露出的所述绝缘基板形成,
所述导电性部件将所述MELF型电子部件与所述金属图案的所述侧部及其上部接合。
5.根据权利要求3所述的电子部件安装装置,其中,
所述第1容纳部由在俯视观察时被十字形地切开而分离成4个的所述金属图案的彼此相对的侧部、和从所述金属图案的所述缺损部露出的所述绝缘基板形成,
所述导电性部件将所述MELF型电子部件与所述金属图案的所述侧部及其上部接合。
6.根据权利要求1或3所述的电子部件安装装置,其中,
所述导电性部件将所述MELF型电子部件与所述金属图案的所述第2容纳部的所述凹陷的内部接合。
7.根据权利要求1至5中任一项所述的电子部件安装装置,其中,
在位于多个所述导电性部件之间的所述绝缘基板的正面上,形成有切口部。
8.一种半导体装置,其具有:
电子部件安装装置;以及
电力半导体元件,
所述电子部件安装装置具有:
绝缘基板,其形成有金属图案;以及
MELF型电子部件,
所述MELF型电子部件与第1容纳部或第2容纳部嵌合,其中,该第1容纳部由所述金属图案和从所述金属图案的缺损部露出的所述绝缘基板构成,该第2容纳部由在通过所述金属图案的缺损部分离开的所述金属图案的彼此相对的侧部的上部所形成的凹陷构成,
所述电子部件安装装置还具有导电性部件,该导电性部件形成于所述MELF型电子部件和所述金属图案之间,
所述导电性部件不形成于所述MELF型电子部件和所述绝缘基板之间,
所述电力半导体元件安装在所述绝缘基板上。
9.根据权利要求8所述的半导体装置,其中,
所述电力半导体元件的材质含有宽带隙半导体。
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