CN107210291B - 半导体装置 - Google Patents
半导体装置 Download PDFInfo
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- CN107210291B CN107210291B CN201680007637.0A CN201680007637A CN107210291B CN 107210291 B CN107210291 B CN 107210291B CN 201680007637 A CN201680007637 A CN 201680007637A CN 107210291 B CN107210291 B CN 107210291B
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Abstract
半导体装置(1)主要具备半导体元件基板(3)、半导体元件(13)、壳体件(15)以及密封树脂(29)。在半导体元件基板(3)中,在基底板(5)的表面隔着绝缘基板(7)配置有导电性的第1电路基板(9)。在壳体件(15)设置有从内壁向着配置有半导体元件(13)的一侧突出的电路基板台(17)和电极端子(19)。在电路基板台(17)直接安装有导电性的第2电路基板(21)。电极端子(19)与第2电路基板(21)通过布线(25)电连接,第2电路基板(21)与半导体元件(13)通过布线(27)电连接。
Description
技术领域
本发明涉及半导体装置,特别是涉及用密封树脂密封功率用的半导体元件的半导体装置。
背景技术
随着产业设备、铁路车辆或者汽车等的高性能化,使用搭载于它们的半导体装置的状态的温度(使用温度)有上升的倾向。近年来,半导体元件的小型化、高耐压化、高电流密度化得以发展,对于与此相伴的半导体元件的高温工作的开发正在加速。特别是,碳化硅(SiC)或者氮化镓(GaN)等宽带隙半导体与硅(Si)半导体相比带隙大,作为适合于近年来半导体元件的开发的材料而受到关注。
为了将能够进行高温工作的半导体元件装置化为半导体装置,需要即使半导体元件在150℃以上的高温下工作时,也要抑制密封树脂与其它部件的剥离以及绝缘基板的裂纹等,从而稳定地确保绝缘性。以往,提出了抑制这样的剥离以及裂纹等的方法。
例如,在专利文献1中提出了如下方法:用线膨胀率低的高耐热密封树脂来密封芯片的周边,用抗氧化劣化性优良的密封材料覆盖半导体装置的表面,从而提高芯片的周边以及模块的可靠性。另外,在专利文献2中提出了如下方法:与搭载有半导体元件的第1绝缘基板独立地,在构成半导体装置的壳体部件的部分搭载通过焊接固定有电阻元件的第2绝缘基板,从而抑制焊料由于从半导体元件产生的热而产生裂纹等。此外,还存在专利文献3。
现有技术文献
专利文献
专利文献1:日本特开2014-146774号公报
专利文献2:日本特开2007-329387号公报
专利文献3:日本特开平11-74433号公报
发明内容
发明所要解决的技术问题
如上所述,用密封树脂密封功率用的半导体元件的半导体装置要求即使在高温下工作的状态也稳定地确保绝缘性。
本发明是作为这样的开发的一环而完成的,其目的在于提供在较高温下也能够稳定地确保绝缘性的半导体装置。
解决技术问题的技术方案
本发明的半导体装置具备半导体元件基板、半导体元件、壳体件、电路基板台、导电性的第2电路基板、电极端子、布线以及密封材料。半导体元件基板包括基底板、配置于基底板的表面的绝缘基板以及配置于绝缘基板的表面的导电性的第1电路基板。半导体元件安装于半导体元件基板的第1电路基板。壳体件以包围半导体元件的方式装配于半导体元件基板。电路基板台设置于壳体件,以向着半导体元件位于的内侧突出的形态配置于与绝缘基板不同的高度位置。导电性的第2电路基板直接配置于电路基板台的表面。电极端子装配于壳体件。布线经由第2电路基板将半导体元件与电极端子电连接。密封材料被填充到由壳体件包围的区域,密封半导体元件、电路基板台以及布线。
发明效果
根据本发明的半导体装置,导电性的第2电路基板被直接配置于在与绝缘基板不同的高度位置配置的电路基板台。由此,当在高温下工作的状态下,即使在密封材料与第2电路基板的界面产生剥离,该剥离也不会到达配置有第1电路基板的绝缘基板,绝缘基板不会产生裂纹。其结果是,能够稳定地确保半导体装置的绝缘性。
附图说明
图1是本发明的实施方式1的半导体装置的俯视图。
图2是在该实施方式中图1所示的剖面线II-II处的剖视图。
图3是比较例的半导体装置的剖视图。
图4是用于说明图3所示的半导体装置的问题点的部分放大剖视图。
图5是用于说明在该实施方式中半导体装置的作用效果的部分放大剖视图。
图6是本发明的实施方式2的半导体装置的俯视图。
图7是在该实施方式中图6所示的剖面线VII-VII处的剖视图。
图8是本发明的实施方式3的半导体装置的俯视图。
图9是在该实施方式中图8所示的剖面线IX-IX处的剖视图。
图10是示出在该实施方式中填充有密封树脂的情形的部分放大剖视图。
图11是本发明的实施方式4的半导体装置的俯视图。
图12是在该实施方式中图11所示的剖面线XII-XII处的剖视图。
图13是在实施方式3中第1变形例的半导体装置的剖视图。
图14是在实施方式3中第2变形例的半导体装置的剖视图。
(符号说明)
1半导体装置;3半导体元件基板;5基底板;7绝缘基板;9第1电路基板;11粘合剂;13半导体元件;15壳体件;17电路基板台;18倾斜部;19电极端子;21第2电路基板;23粘接件;25布线;27布线;29密封树脂、31间隙。
具体实施方式
实施方式1
对实施方式1的半导体装置进行说明。该半导体装置是半导体功率模块。半导体功率模块广泛用于例如以家电设备以及汽车等为代表的进行电力控制的设备。
如图1以及图2所示,半导体装置1主要具备半导体元件基板3、半导体元件13、壳体件15以及密封树脂29。
在半导体元件基板3中,在基底板5的表面隔着绝缘基板7配置有导电性的第1电路基板9。作为绝缘基板7,使用例如陶瓷基板或者氮化铝等。作为第1电路基板9,使用例如对一张铜板实施基于半导体元件的布局等的规定的构图而得到的基板。
半导体元件13通过例如焊料等粘合剂11被安装于第1电路基板9。作为半导体元件13,例如形成并联连接于功率用半导体元件的回流二极管。在半导体装置1中,搭载有多个并联连接于功率用半导体元件的半导体元件13。
壳体件15通过粘接剂23被固定于半导体元件基板3。将从内壁向配置有半导体元件13的一侧突出的电路基板台17设置于壳体件15。该电路基板台17被配置于比绝缘基板7高的位置。另外,电路基板台17与壳体件15一体地形成。导电性的第2电路基板21被直接安装于电路基板台17。作为第2电路基板21,使用例如实施了规定的构图的铜板。另外,将铜的电极端子19设置于壳体件15。
电极端子19与第2电路基板21通过布线25电连接。另外,第2电路基板21与半导体元件13通过布线27电连接。这样,多个半导体元件13分别经由第2电路基板21电连接于电极端子19。
对直接安装有第2电路基板21的电路基板台17,设定足以安装第2电路基板21的宽度L1、长度L2以及厚度T1。宽度L1是沿着壳体件15的内壁的长度,设定为例如10mm~100mm。如果宽度L1窄于10mm,则不够安装第2电路基板21。另一方面,如果宽度L1超过100mm,则有可能成为填充密封树脂2时的障碍。
长度L2是从壳体件15的内壁突出的长度,设定为例如5mm~20mm。如果长度L2短于5mm,则不够安装第2电路基板21。另一方面,如果长度L2超过20mm,则有可能成为填充密封树脂2时的障碍。厚度T1设定为例如1mm~10mm。如果厚度T1薄于1mm,则机械强度不够。另一方面,如果厚度T1超过10mm,则会过厚而不合适。
另外,电路基板台17与绝缘基板7之间的高度方向的距离H1设定为例如3mm~10mm。如果距离H1短于3mm,则在填充密封树脂29时,密封树脂29有可能被填充得不够。另一方面,如果距离H1超过10mm,则有可能无法可靠地密封第2电路基板21等。
作为第1电路基板9、第2电路基板21以及电极端子19各自的材料,虽然例举了通常使用的铜(铜板),但只要是具有所需的散热特性的材料,则不限于铜。例如,也可以使用铝(Al)、铁(Fe)或者将铝与铁复合而成的材料。另外,也可以使用铜/殷钢(inver)/铜等的复合材料。进一步地,也可以使用铝-碳化硅合金(AlSiC)或者铜-钼合金(CuMo)等合金。
对第1电路基板9以及第2电路基板21等的表面通常实施镀镍(Ni),但只要是能够将所需的电流与电压供给到半导体元件13的构造,则既可以实施镀敷,也可以不实施镀敷。在实施镀敷的情况下,除镀镍之外,还可以实施例如镀金或者镀锡。
另外,在电极端子19、第1电路基板9以及第2电路基板21各自的与密封树脂29接触的部分,为了提高与密封树脂29的密合性,也可以在电极端子19、第1电路基板9以及第2电路基板21各自的表面设置微小的凹凸。或者,也可以进行底漆处理(primer treatment)等将密合性提高剂涂敷到电极端子19、第1电路基板9以及第2电路基板21各自的表面。作为密合性提高剂,使用例如硅烷偶联剂、聚酰亚胺或者环氧树脂等,但只要能够提高半导体元件基板3的电极部件与密封树脂29的密合性,则不限于这些。
绝缘基板7被设为使散布有氧化铝(Al2O3)、二氧化硅(SiO2)、氮化铝(AlN)、氮化硼(BN)、氮化硅(Si3N4)等陶瓷粉的树脂硬化而成的树脂硬化物基板。关于半导体元件基板3,将第1电路基板9粘附到这样的绝缘基板7的一个表面,将基底板5粘附到另一表面。
半导体元件基板3由于需要具备散热性和绝缘性,所以也可以使用如下半导体元件基板:作为绝缘基板7,使用将陶瓷板嵌入到树脂而得的树脂硬化物基板或者仅由陶瓷构成的绝缘基板,将第1电路基板粘附到该绝缘基板的一个表面,将基底板粘附到另一表面。
另外,作为绝缘基板7中包括的陶瓷粉,虽然例举了氧化铝(Al2O3)、二氧化硅(SiO2)、氮化铝(AlN)、氮化硼(BN)、氮化硅(Si3N4)等,但不限于此,也可以使用例如金刚石(C)、碳化硅(SiC)、氧化硼(B2O3)等。
除陶瓷粉之外,例如也可以使用硅树脂或者丙烯酸树脂等树脂制的粉体。在粉体的情况下,多使用形状为球状的粉体,但不限于此,也可以使用例如粉碎状、粒状、鳞状、聚集体等粉体。另外,作为粉体的填充量,对绝缘基板7填充能够得到所需的散热性和绝缘性的量即可。
作为用于绝缘基板7的树脂,通常使用环氧树脂,但不限于此。除此之外,也可以使用例如聚酰亚胺树脂、硅树脂或者丙烯酸树脂等,只要是兼具绝缘性与粘接性的材料的树脂即可。
作为用于基底板5的材料,通常使用铜(Cu)或者铝(Al)等金属,但不限于此。除此之外,例如也可以使用铝-碳化硅合金(AlSiC)或者铜-钼合金(CuMo)等合金。另外,作为基底板5的材料,也可以使用环氧树脂、聚酰亚胺树脂或者丙烯酸树脂等有机材料。
作为布线25、27,使用由铝或者金形成的剖面形状为圆形的线体,但不限于此。除圆形的线体之外,例如也可以使用将剖面形状是方形(矩形)的铜板做成带状而得到的线体。此外,在图1中,示出对一个半导体元件13连接有1根布线27的构造,但这只不过是为了方便进行与布线25、27相关的说明而简略示出的,在实际的半导体装置1中,会根据半导体元件13的电流密度等来设置所需根数的布线。
在布线27与半导体元件13的接合中,能够使用使铜或者锡等金属片熔融而接合的熔融接合或者施加超声波的超声波接合等,只要是能够将所需的电流与电压供给到半导体元件的接合方法即可。
作为密封树脂29的材料,使用例如环氧树脂,但不限于此,只要是具有期望的弹性率与耐热性的树脂,就能够用作密封树脂的材料。除环氧树脂之外,也可以使用例如硅树脂、聚氨酯树脂、聚酰亚胺树脂、聚酰胺树脂、聚酰胺酰亚胺树脂或者丙烯酸树脂等,只要是兼具绝缘性与粘接性的材料即可。
在上述半导体装置1中,安装于第1电路基板9的半导体元件13与电极端子19通过布线27、25经由第2电路基板21电连接。该第2电路基板21直接安装于壳体件15的电路基板台17。由此,能够更稳定地确保绝缘性。对于这点,与比较例的半导体装置对比地进行说明。
如图3所示,比较例的半导体装置101主要具备半导体元件基板103、半导体元件113、壳体件115以及密封树脂129。在半导体元件基板103中,隔着绝缘基板107将第1电路基板109配置于基底板105的表面。将第2电路基板121配置于绝缘基板107的表面。半导体元件113通过焊料等粘合剂111安装于第1电路基板9。
壳体件115通过粘接剂123固定于半导体元件基板103。电极端子119被安装于壳体件115。电极端子119与第2电路基板121通过布线125电连接,第2电路基板121与半导体元件113通过布线127电连接。在壳体件115的内侧区域填充有密封树脂129以密封半导体元件113以及布线125、127等。
在比较例的半导体装置101中,半导体元件113通过布线127、125经由第2电路基板121电连接于电极端子119。作为其电中继点的第2电路基板121被配置于配置有第1电路基板109的绝缘基板107的规定区域。
作为中继点的第2电路基板121的面积小于安装有半导体元件113的第1电路基板109的面积。因此,密封树脂129与第1电路基板109的接触面积较大,相对于此,密封树脂129与第2电路基板121的接触面积较小。
如果接触面积小,则与密封树脂129的粘接强度也变低。在此,如图4所示,当在粘接强度低的密封树脂129与第2电路基板121的界面产生剥离时,由于伴随着热循环或者高温保存的热历程,密封树脂129反复膨胀与收缩,从而剥离131有时会到达绝缘基板107。
进一步地,如果密封树脂129的膨胀与收缩反复发生,则会从剥离到达的绝缘基板107的部分开始在绝缘基板107中产生裂纹133,最终在半导体装置101产生绝缘不良。
相对于比较例,在上述半导体装置1中,如图1或者图2所示,第2电路基板21被直接安装于从壳体件15的内壁突出的电路基板台17。因此,如图5所示,即使在密封树脂29与第2电路基板21的界面产生剥离31,由于密封树脂29反复膨胀与收缩,该剥离31也会达到电路基板台17。由此,在第2电路基板21与密封树脂29的界面产生的剥离31不会使绝缘基板7产生裂纹。其结果是,能够可靠地抑制在半导体装置1产生绝缘不良。
特别是,在应用宽带隙半导体的在150℃以上的温度下工作的半导体装置中,在工作时,密封树脂中产生的应力较大,容易产生剥离,所以通过做成将第2电路基板21直接安装于电路基板台17的构造,能够稳定地确保半导体装置的绝缘性。
此外,在不是将第2电路基板21直接安装于电路基板台17的构造、而是使其它绝缘基板夹在第2电路基板与电路基板台17之间来安装的构造(未图示)中,与对于比较例的半导体装置所说明的同样地,设想为从剥离所到达的其它绝缘基板的部分开始在其它绝缘基板中产生裂纹,最终产生绝缘不良。
另外,第2电路基板21被安装于从壳体件15的内壁向搭载有半导体元件13的一侧突出的电路基板台17。由此,将半导体元件13与第2电路基板21电连接的布线27的长度较短就行,能够有助于使布线的寿命变长。
这样,在实施方式的半导体装置1中,能够抑制绝缘不良,并且能够延长布线的寿命,能够进一步提高作为半导体装置的可靠性。
实施方式2
在此,对将电路基板台配置为跨接相互对置的壳体件的内壁间的半导体装置进行说明。
如图6以及图7所示,半导体装置1主要具备半导体元件基板3、半导体元件13、壳体件15以及密封树脂29。特别是,在壳体件15,桥接构造的电路基板台17被设置为跨接相互对置的一个内壁和另一内壁。该电路基板台17配置于比绝缘基板7高的位置。另外,电路基板台17与壳体件15一体地形成。第2电路基板21被直接安装于该电路基板台17。此外,关于这以外的结构,与图1以及图2所示的半导体装置相同,所以,对同一部件附加同一符号,除必要的情况之外不重复进行其说明。
对直接安装有第2电路基板21的桥接构造的电路基板台17,设定足以安装第2电路基板21的宽度L3与厚度T2。宽度L3例如设定为5mm~30mm。如果宽度L3窄于5mm,则不够安装第2电路基板21。另一方面,如果宽度L3超过30mm,则有可能成为填充密封树脂2时的障碍。
厚度T2例如设定为1mm~10mm。如果厚度T2薄于1mm,则机械强度不够。另一方面,如果厚度T2超过10mm,则会过厚而不合适。
另外,电路基板台17与绝缘基板7之间的高度方向的距离H2例如设定为3mm~10mm。如果距离H2短于3mm,则在填充密封树脂29时,密封树脂29有可能被填充得不够。另一方面,如果距离H2超过10mm,则有可能无法可靠地密封第2电路基板21等。
在上述半导体装置1中,第2电路基板21直接安装于设置为跨接壳体件15的相互对置的一个内壁与另一内壁的桥接构造的电路基板台17。因此,即使在密封树脂29与第2电路基板21的界面产生剥离(未图示),由于密封树脂29反复膨胀与收缩,该剥离也达到电路基板台17。由此,在第2电路基板21与密封树脂29的界面产生的剥离不会使绝缘基板7产生裂纹。其结果是,能够可靠地抑制在半导体装置1产生绝缘不良,能够稳定地确保半导体装置的绝缘性。
另外,电路基板台17是桥接构造,从而容易使电路基板台17处的第2电路基板21的位置接近于半导体元件13。由此,将半导体元件13与第2电路基板21电连接的布线27的长度较短就行,能够有助于延长布线的寿命。
进一步地,通过使桥接构造的电路基板台17配置于壳体件15的中央附近,从而第2电路基板21被配置于与半导体装置1的外周部分隔开距离的位置,能够使第2电路基板21中产生的应力降低。由此,能够抑制在密封树脂29与第2电路基板21的界面产生剥离。
实施方式3
在此,对将倾斜部设置于电路基板台的半导体装置的第1例进行说明。
如图8以及图9所示,半导体装置1主要具备半导体元件基板3、半导体元件13、壳体件15以及密封树脂29。特别是,设置于壳体件15的电路基板台17具备倾斜部18。在电路基板台17,倾斜部18形成于与绝缘基板7对置的下表面侧。
第2电路基板21被直接安装于该电路基板台17。此外,对于这以外的结构,与图1以及图2所示的半导体装置相同,所以对同一部件附加同一符号,除必要的情况之外不重复进行其说明。
接下来,对形成有倾斜部18的电路基板台17具体进行说明。首先,与对图1以及图2所示的半导体装置说明的同样地,对电路基板台17设定足以安装第2电路基板21的宽度L1以及长度L2。宽度L1是沿着壳体件15的内壁的长度,例如设定为10mm~100mm。如果宽度L1窄于10mm,则不够安装第2电路基板21。另一方面,如果宽度L1超过100mm,则有可能成为填充密封树脂2时的障碍。
长度L2是从壳体件15的内壁突出的长度,例如设定为5mm~20mm。如果长度L2短于5mm,则不够安装第2电路基板21。另一方面,如果长度L2超过20mm,则有可能成为填充密封树脂2时的障碍。
另外,电路基板台17的内侧端部与绝缘基板7之间的高度方向的距离H1例如设定为3mm~10mm。如果距离H1短于3mm,则在填充密封树脂29时,密封树脂29有可能被填充得不够。另一方面,如果距离H1超过10mm,则有可能无法可靠地密封第2电路基板21等。
接下来,对倾斜部18进行说明。倾斜部18以从电路基板台17的突出前端部向着壳体件15而接近绝缘基板7的形态倾斜。倾斜部18相对于绝缘基板7以5°以上的倾角θ倾斜。
在此,如果将电路基板台17的长度L2设为20mm(容许最大值),将距离H1设为3mm(容许最小值),则最小的倾角θ为约8.5°。如果该倾角θ进一步地变小而变成小于5°的倾角θ,则在电路基板台17与绝缘基板7之间,密封树脂29有可能被填充得不够。因此,倾斜部18的倾角θ最好在5°以上。
在上述半导体装置中,除使绝缘基板7不产生裂纹的效果之外,还得到如下的效果。
在电路基板台17设置有以从电路基板台17的突出端部向着壳体件15而接近绝缘基板7的形态倾斜的倾斜部18。通过如图10所示设置倾斜部18,密封树脂29容易流入到电路基板台17与绝缘基板7之间的较窄的空间(参照箭头)。
由此,抑制由于未被充分填充密封树脂并在半导体装置内部残留气泡而在半导体装置的工作中发生放电。其结果是,能够更加稳定地确保半导体装置1的绝缘性。
实施方式4
在此,对在电路基板台设置有倾斜部的半导体装置的第2例进行说明。
如图11以及图12所示,半导体装置1主要具备半导体元件基板3、半导体元件13、壳体件15以及密封树脂29。特别是,设置于壳体件15的桥接构造的电路基板台17具备倾斜部18。在电路基板台17,倾斜部18形成于与绝缘基板7对置的下表面侧。
第2电路基板21被直接安装于该电路基板台17。此外,对于这以外的结构,与图6以及图7所示的半导体装置相同,所以,对同一部件附加同一符号,除必要的情况之外不重复进行其说明。
接下来,对形成有倾斜部18的桥接构造的电路基板台17具体进行说明。首先,与对于图6以及图7所示的半导体装置所说明的同样地,对电路基板台17设定足以安装第2电路基板21的宽度L3。宽度L3例如设定为5mm~30mm。如果宽度L3窄于5mm,则不够安装第2电路基板21。另一方面,如果宽度L3超过30mm,则有可能成为填充密封树脂2时的障碍。
另外,电路基板台17与绝缘基板7之间的高度方向的距离H2例如设定为3mm~10mm。如果距离H2短于3mm,则在填充密封树脂29时,密封树脂29有可能被填充得不够。另一方面,如果距离H2超过10mm,则有可能无法可靠地密封第2电路基板21等。
接下来,对倾斜部18进行说明。倾斜部18以从桥接构造的电路基板台17中的与壳体件15隔开距离的规定位置向着壳体件15而接近绝缘基板7的形态倾斜。倾斜部18相对于绝缘基板7以5°以上的倾角θ倾斜。与上述同样地,如果该倾角θ小于5°,则在电路基板台17与绝缘基板7之间,密封树脂29有可能被填充得不够。因此,倾斜部18的倾角θ最好在5°以上。
在上述半导体装置中,除使绝缘基板7不产生裂纹的效果之外,还能够得到如下的效果。
在电路基板台17,以从桥接构造的电路基板台17的规定位置向着壳体件15而绝缘基板7与电路基板台17之间的距离(高度)逐渐变短的形态设置倾斜部18。通过设置倾斜部18,密封树脂29容易流入到电路基板台17与绝缘基板7之间的较窄的空间。
由此,抑制由于未充分地填充密封树脂并在半导体装置内部残留气泡而在半导体装置的工作中发生放电。其结果是,能够更加稳定地确保半导体装置1的绝缘性。
此外,在图9或者图12中示出了倾斜部18的倾斜面平坦的情况,但只要倾角θ在5°以上,则倾斜面也可以是曲面,例如,如图13所示,也可以是凹面(向上凸)。另外,如图14所示,也可以是凸面(向下凸)。进一步地,对于桥接构造的电路基板台17的倾斜部18的倾斜面,也同样地可以设为凹面或者凸面(未图示)。
此外,在上述各实施方式中,以一体地形成电路基板台17与壳体件15的情况为例进行了说明。作为电路基板台,不限于此,例如,也可以将用与壳体件15相同的材料另行形成的电路基板台固定于壳体件。
对于在各实施方式中说明的半导体装置,根据需要能够进行各种组合,例如也可以将沿着壳体件15的内壁配置的电路基板台和桥接构造的电路基板组合。
本次公开的实施方式是示例,并非限制于此。本发明不通过上述说明的范围而是通过权利要求书来表示,旨在包括与权利要求书等同的含义以及范围内的全部变更。
产业上的可利用性
本发明能够有效地用于由密封树脂密封功率用的半导体元件的半导体装置。
Claims (16)
1.一种半导体装置,具备:
半导体元件基板,包括基底板、配置于所述基底板的表面的绝缘基板以及配置于所述绝缘基板的表面的导电性的第1电路基板;
半导体元件,安装于所述半导体元件基板的所述第1电路基板;
壳体件,以包围所述半导体元件的方式装配于所述半导体元件基板;
电路基板台,设置于所述壳体件,以向着所述半导体元件位于的内侧突出的形态配置于与所述绝缘基板不同的高度位置;
导电性的第2电路基板,直接配置于所述电路基板台的表面;
电极端子,装配于所述壳体件;
布线,将所述半导体元件、所述第2电路基板和所述电极端子按照所述半导体元件、所述第2电路基板以及所述电极端子的顺序电连接;以及
密封材料,被填充到由所述壳体件包围的区域,密封所述半导体元件、所述电路基板台以及所述布线。
2.根据权利要求1所述的半导体装置,其中,
所述电路基板台沿着所述壳体件的内壁配置。
3.根据权利要求2所述的半导体装置,其中,
所述电路基板台的沿着所述内壁的长度被设定为10mm以上且100mm以下,所述电路基板台的从所述内壁突出的长度被设定为5mm以上且20mm以下,所述电路基板台的厚度被设定为1mm以上且10mm以下。
4.根据权利要求1所述的半导体装置,其中,
所述绝缘基板与所述电路基板台之间的高度方向的距离被设定为3mm以上且10mm以下。
5.根据权利要求1所述的半导体装置,其中,
所述电极端子的水平部分和所述第2电路基板的高度不同。
6.根据权利要求2所述的半导体装置,其中,
在所述电路基板台的与所述绝缘基板对置的一侧设置有以从所述电路基板台的突出前端部向着所述壳体件而接近所述绝缘基板的形态倾斜的倾斜部。
7.根据权利要求6所述的半导体装置,其中,
所述倾斜部相对于所述绝缘基板的倾角为5°以上。
8.一种半导体装置,具备:
半导体元件基板,包括基底板、配置于所述基底板的表面的绝缘基板以及配置于所述绝缘基板的表面的导电性的第1电路基板;
半导体元件,安装于所述半导体元件基板的所述第1电路基板;
壳体件,以包围所述半导体元件的方式装配于所述半导体元件基板;
电路基板台,设置于所述壳体件,以向着所述半导体元件位于的内侧突出的形态配置于与所述绝缘基板不同的高度位置;
导电性的第2电路基板,直接配置于所述电路基板台的表面;
电极端子,装配于所述壳体件;
布线,经由所述第2电路基板将所述半导体元件和所述电极端子电连接;以及
密封材料,被填充到由所述壳体件包围的区域,密封所述半导体元件、所述电路基板台以及所述布线,其中,
所述电路基板台被配置成跨接所述壳体件的相互对置的一个内壁与另一内壁之间。
9.根据权利要求8所述的半导体装置,其中,
所述电路基板台的宽度被设定为5mm以上且30mm以下,所述电路基板台的厚度被设定为1mm以上且10mm以下。
10.根据权利要求8所述的半导体装置,其中,
所述绝缘基板与所述电路基板台之间的高度方向的距离被设定为3mm以上且10mm以下。
11.根据权利要求8所述的半导体装置,其中,
在所述电路基板台的与所述绝缘基板对置的一侧设置有以从与所述壳体件隔开距离的位置向着所述壳体件而接近所述绝缘基板的形态倾斜的倾斜部。
12.根据权利要求11所述的半导体装置,其中,
所述倾斜部相对于所述绝缘基板的倾角为5°以上。
13.根据权利要求1或8所述的半导体装置,其中,
所述电路基板台被一体地设置于所述壳体件。
14.根据权利要求1或8所述的半导体装置,其中,
所述电路基板台由与所述壳体件的材料相同的材料形成,
所述电路基板台与所述壳体件分体地固定于所述壳体件。
15.根据权利要求1或8所述的半导体装置,其中,
所述密封材料是环氧树脂以及硅树脂中的任意材料。
16.根据权利要求1或8所述的半导体装置,其中,
所述基底板通过有机材料以及无机材料中的任意材料形成。
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