JP6045749B2 - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
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- JP6045749B2 JP6045749B2 JP2016512001A JP2016512001A JP6045749B2 JP 6045749 B2 JP6045749 B2 JP 6045749B2 JP 2016512001 A JP2016512001 A JP 2016512001A JP 2016512001 A JP2016512001 A JP 2016512001A JP 6045749 B2 JP6045749 B2 JP 6045749B2
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- sealing resin
- resin member
- terminal
- semiconductor element
- semiconductor device
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Description
最初に本発明の実施の形態に係る半導体装置の全体構成について説明する。図1は本発明の実施の形態1による半導体装置の基本構造を示す断面図である。半導体装置100は、封止樹脂部材1、半導体素子2a、半導体素子2b、電極端子4、ボンディング配線6、ケース部材7、半導体素子基板11、接合材12、ベース板13、接着剤14などから構成されている。半導体素子2aおよび半導体素子2bは、半導体素子基板11にはんだなどの接合材12で固着されている。ベース板13は半導体素子基板11にはんだなどの接合材12で固着されている。ケース部材7はベース板13とシリコーン製の接着剤14によって固定されている。ベース板13が底板となり、ベース板13とケース部材7とで筐体を成している。ケース部材7は、使用温度領域内で熱変形を起こさず、しかも、絶縁性を維持することが求められている。このため、ケース部材7には、PPS(Poly Phenylene Sulfide)樹脂などの、軟化点が高い樹脂が使用されている。
本発明の実施の形態2では、本発明の実施の形態1と比較して、ケース部材7と一体化している端子部の構造が異なっている。実施の形態1は電極端子4の配線接続部4aが窪み3aに三辺を取り囲まれた構造であるが、実施の形態2では電極端子4の配線接続部4aが端子部3の窪み3aに四辺を囲まれた構造を有している。図7は、本発明の実施の形態2に係る端子部を示す側面図である。図8は、本発明の実施の形態2に係る端子部を示す斜視図である。
本発明の実施の形態3では、本発明の実施の形態1と比較して、ケース部材7と一体化している端子部の構造が異なっている。実施の形態1は、電極端子4の配線接続部4aがケース部材7から成る端子部3に三辺を取り囲まれた構造である。実施の形態3では図9と図10に示すような、電極端子4の配線接続部4aがケース部材7から成る端子部3から突出した構造を有している。端子部3には周囲から突出した段3dが形成されている。ボンディング配線6が接合される電極端子4の配線接続部4aは、端子部3の上面3uより高い位置に配置されている。
本発明の実施の形態4に係る半導体装置の構造を図11に示す。実施の形態1および2における、電極端子4および配線接続部4aは、ケース部材7の内部に含まれる半導体素子2a、半導体素子2b、電極端子4、ボンディング配線6、半導体素子基板11を覆う封止樹脂部材1により、封止されている。本実施の形態では、封止樹脂部材1を、半導体素子2a、半導体素子2b、電極端子4、ボンディング配線6、半導体素子基板11を覆う第1の封止樹脂部材1aと、ケース部材7から成る端子部3に三辺を取り囲まれた電極端子4および配線接続部4aを覆う第2の封止樹脂部材1bとで構成している。第2の封止樹脂部材1bには、第1の封止樹脂部材1aよりも低弾性率のものを使用する。
以下、本発明の効果を実施例1〜4と比較例とを対比させて説明する。先ず、比較例に関わる端子部の構造を図12と図13に基づいて説明する。比較例では配線接続部4aと端子部3に高低差が設けられていない。すなわちこの電極端子構造では電極端子4の配線接続部4aと端子部3の上面3uが同一平面上に存在している。電極端子4は端子部3にインサートモールドされている。
Claims (8)
- 第一主面には第一電極パターンが形成されており、第二主面には第二電極パターンが形成されている絶縁性基板と、
前記絶縁性基板の第一電極パターンに接合されているベース板と、
表側電極と裏側電極を有し、前記絶縁性基板の第二電極パターンに前記裏側電極が接合されている半導体素子と、
窪みが形成されている端子部を有する樹脂製のケース部材と、
前記ケース部材に固定されていて、配線接続部が前記窪みの底面から露呈している電極端子と、
前記電極端子の配線接続部と前記半導体素子の表側電極を接続するボンディング配線と、前記ケース部材の内側に充填され、前記絶縁性基板と前記半導体素子と前記ボンディング配線を封止する封止樹脂部材と、を備え、
前記端子部に形成されている窪みには前記ボンディング配線の入り口が設けられていて、前記入り口は装置内側を向きかつ開放されていて、
前記端子部に形成されている窪みは、前記入り口から奥面に向かうほど、幅が広くなっていることを特徴とする半導体装置。 - 前記端子部に形成されている窪みは、前記入り口に敷居が設けられていることを特徴とする請求項1に記載の半導体装置。
- 前記端子部に形成されている窪みは、前記電極端子の配線接続部を被覆する樹脂が充填されていることを特徴とする請求項2に記載の半導体装置。
- 前記封止樹脂部材は、前記絶縁性基板を封止する第1の封止樹脂部材と、前記電極端子の配線接続部を被覆する第2の封止樹脂部材を含み、
前記第1の封止樹脂部材と前記第2の封止樹脂部材は、異なる材料からなることを特徴とする請求項1に記載の半導体装置。 - 前記第2の封止樹脂部材は、前記第1の封止樹脂部材よりも弾性率が低いことを特徴と
する請求項4に記載の半導体装置。 - 前記第2の封止樹脂部材と前記第1の封止樹脂部材との接着強度は、5Mpa以下であることを特徴とする請求項4に記載の半導体装置。
- 前記半導体素子の少なくとも一部がワイドバンドギャップ半導体により形成されていることを特徴とする請求項1から6のいずれか1項に記載の半導体装置。
- 前記ワイドバンドギャップ半導体は、炭化珪素,窒化ガリウム系材料,ダイヤモンドのいずれかの半導体であることを特徴とする請求項7に記載の半導体装置。
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WO2019049400A1 (ja) | 2017-09-05 | 2019-03-14 | 三菱電機株式会社 | パワーモジュール及びその製造方法並びに電力変換装置 |
US11227808B2 (en) | 2017-09-05 | 2022-01-18 | Mitsubishi Electric Corporation | Power module and method for fabricating the same, and power conversion device |
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