CN104684244A - 电子部件内置基板、电子部件内置基板的制造方法 - Google Patents

电子部件内置基板、电子部件内置基板的制造方法 Download PDF

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CN104684244A
CN104684244A CN201410710038.8A CN201410710038A CN104684244A CN 104684244 A CN104684244 A CN 104684244A CN 201410710038 A CN201410710038 A CN 201410710038A CN 104684244 A CN104684244 A CN 104684244A
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insulating barrier
resin insulating
conductor
wiring layer
via hole
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CN104684244B (zh
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清水敬介
中村雄一
山口刚
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Ibiden Co Ltd
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Ibiden Co Ltd
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Abstract

电子部件内置基板、电子部件内置基板的制造方法。提供可靠性高的电子部件内置基板的制造方法。在第2树脂绝缘层(550F)上的第2导体布线层(558F)上覆盖有第3树脂绝缘层(650Fa)的状态下进行腔室(651)的去钻污处理，因此，在第2树脂绝缘层(550F)和第2导体布线层(558F)之间不会产生间隙，该第2导体布线层(558F)的可靠性不会下降。

Description

电子部件内置基板、电子部件内置基板的制造方法
技术领域
本发明涉及在设置于树脂绝缘层的腔室中内置有电子部件的电子部件内置基板以及电子部件内置基板的制造方法。
背景技术
专利文献1公开了一种将半导体元件埋入于绝缘层的印刷布线板。该专利文献1中，在配置电子部件的支承导体布线层上层叠树脂绝缘层，在所层叠的树脂绝缘层中利用激光切出到达支承导体布线层的切缝，并取下被切断的树脂绝缘层，由此形成了收纳电子部件的腔室。
专利文献1：日本特开2012-191204号公报
在利用专利文献1的制造方法制造的印刷布线板中，可知存在这样的问题：形成了收纳电子部件的腔室后的树脂绝缘层上的布线图案的可靠性低。可以推测其原因在于，在利用激光切取树脂绝缘层之后进行用于去除激光残渣的去钻污(desmear)处理时，形成了腔室后的树脂绝缘层的表面被挖到，在该树脂绝缘层和导体图案之间产生间隙，从而该导体图案的可靠性下降。
发明内容
本发明正是为了解决上述的课题而完成的，其目的在于，提供一种可靠性高的电子部件内置基板和该电子部件内置基板的制造方法。此外，提供一种能够在内置的电子部件上形成密间距的焊盘的电子部件内置基板和该电子部件内置基板的制造方法。
本发明申请的电子部件内置基板的制造方法包含如下步骤：在第1树脂绝缘层上形成包括第1导体焊盘和电子部件配置用的支承导体布线层的第1导体布线层；在所述第1树脂绝缘层和所述第1导体布线层上层叠第2树脂绝缘层；形成贯通所述第2树脂绝缘层并到达所述第1导体焊盘的第1过孔导体，并且，在所述第2树脂绝缘层上形成包括与该第1过孔导体连接的第2导体焊盘的第2导体布线层；在所述第2树脂绝缘层和所述第2导体布线层上层叠第3树脂绝缘层；利用激光形成贯通所述第3树脂绝缘层和所述第2树脂绝缘层并使所述支承导体布线层的一部分露出的腔室；对所述腔室实施去钻污处理；在所述支承导体布线层上配置电子部件；在所述第3树脂绝缘层和所述电子部件上层叠第4树脂绝缘层；形成贯通所述第3树脂绝缘层和第4树脂绝缘层并到达所述第2导体焊盘的第2过孔用开口、和贯通所述第4树脂绝缘层并到达所述电子部件的焊盘的第3过孔用开口；以及通过镀覆，在所述第2过孔用开口中形成第2过孔导体，在所述第3过孔用开口中形成第3过孔导体，并且，在所述第4树脂绝缘层上形成与所述第2过孔导体连接的第3导体焊盘和与所述第3过孔导体连接的第4导体焊盘。
本发明申请的电子部件内置基板内置有电子部件，所述电子部件内置基板具有：第1树脂绝缘层；第1导体布线层，其形成在该第1树脂绝缘层上并包括第1导体焊盘；第2树脂绝缘层，其层叠在所述第1树脂绝缘层、所述第1导体布线层上；第2导体布线层，其形成在所述第2树脂绝缘层上并包括第2导体焊盘；第1过孔导体，其贯通所述第2树脂绝缘层并将第1导体焊盘和所述第2导体焊盘连接起来；第3树脂绝缘层，其层叠在所述第2树脂绝缘层、所述第2导体布线层上；腔室，其贯通所述第2树脂绝缘层和第3树脂绝缘层，用于内置所形成的电子部件；电子部件，其被内置于所述腔室并具有端子；第4树脂绝缘层，其层叠在所述第3树脂绝缘层和所述电子部件上；第3导体布线层，其形成在所述第4树脂绝缘层上并包括第3导体焊盘和第4导体焊盘；第2过孔导体，其将所述第2导体焊盘和所述第3导体焊盘连接起来；以及第3过孔导体，其将所述电子部件的端子和所述第4导体焊盘连接起来。并且，所述第2过孔导体贯通第3树脂绝缘层和第4树脂绝缘层，并且所述第2过孔导体是利用填充镀覆进行填充而成的，所述第3过孔导体贯通第4树脂绝缘层，并且所述第3过孔导体是利用填充镀覆进行填充而成的。
在利用本发明申请的制造方法而得的电子部件内置基板中，在第2树脂绝缘层和第2导体布线层上层叠第3树脂绝缘层，利用激光形成贯通第3树脂绝缘层和第2树脂绝缘层而使支承导体布线层的一部分露出的腔室，并对腔室实施去钻污处理。即，在第2树脂绝缘层上的第2导体布线层上覆盖有第3树脂绝缘层的状态下进行去钻污处理，因此，在第2树脂绝缘层和第2导体布线层之间不会产生间隙，该第2导体布线层的可靠性不会下降。而且，形成贯通第3树脂绝缘层和第4树脂绝缘层并到达第2导体布线层的第2过孔用开口、以及贯通第4树脂绝缘层并到达电子部件的焊盘的第3过孔用开口，在第2过孔用开口中形成第2过孔导体，在第3过孔用开口中形成第3过孔导体。即，与电子部件的焊盘连接的第3过孔导体仅贯通第4树脂绝缘层，被贯通的树脂绝缘层较薄，因此，能够在内置的电子部件上形成密间距的焊盘(第4导体焊盘)。
本发明申请的电子部件内置基板具备：贯通第4树脂绝缘层、第3树脂绝缘层并到达第2导体布线层的第2过孔导体；以及贯通第4树脂绝缘层并到达电子部件的焊盘的第3过孔导体。即，与电子部件的焊盘连接的第3过孔导体仅贯通第4树脂绝缘层，被贯通的树脂绝缘层较薄，因此，能够在内置的电子部件上形成密间距的焊盘(第4导体焊盘)。
附图说明
图1的(A)是本发明的第1实施方式的电子部件内置基板的剖视图，图1的(B)是图1的(A)的局部放大图。
图2是示出第1实施方式的电子部件内置基板的制造方法的工序图。
图3是示出第1实施方式的电子部件内置基板的制造方法的工序图。
图4是示出第1实施方式的电子部件内置基板的制造方法的工序图。
图5是示出第1实施方式的电子部件内置基板的制造方法的工序图。
图6是示出第1实施方式的电子部件内置基板的制造方法的工序图。
图7是示出第1实施方式的电子部件内置基板的制造方法的工序图。
图8是示出第1实施方式的电子部件内置基板的制造方法的工序图。
图9的(A)是示出第1实施方式的电子部件内置基板的应用例的剖视图，图9的(B)是电子部件内置基板的俯视图。
图10是示出第1实施方式的电子部件内置基板的应用例的剖视图。
图11的(A)是第2实施方式的电子部件内置基板的剖视图，图11的(B)是图11的(A)的局部放大图，图11的(C)是第2实施方式的变形例的电子部件内置基板的剖视图。
标号说明
10：电子部件内置基板；30：核心基板；36：通孔导体；50F：树脂绝缘层；58F：导体布线层；60F：过孔导体；90：电子部件；450F：第1树脂绝缘层；458Ff：支承导体布线层；550F：第2树脂绝缘层；558F：第2导体布线层；650F：最外层的树脂绝缘层；650Fa：第3树脂绝缘层；659Fb：第4树脂绝缘层；660F：第2过孔导体；660Ff：第3过孔导体。
具体实施方式
[第1实施方式]
图1的(A)示出第1实施方式的电子部件内置基板的剖面。第1实施方式的电子部件内置基板10具有核心基板30。该核心基板30具有：具备第1面F和与该第1面相反侧的第2面S的绝缘基板20；在绝缘基板20的第1面F上形成的第1面侧导体布线层34F；以及在绝缘基板20的第2面上形成的第2面侧导体布线层34S。核心基板30还具有连接第1面侧导体布线层34F和第2面侧导体布线层34S的通孔导体36。通孔导体36形成于贯通核心基板30的贯通孔28的内壁，在通孔导体36内填充有填充树脂21。图1的(A)所示的核心基板30例如通过US7786390中公开的方法来制造。核心基板30的第1面侧导体布线层34F、第2面侧导体布线层34S包括通孔连接盘(through hole land)，该通孔连接盘形成在未图示的多个导体电路和通孔导体36的周围。电子部件内置基板以及绝缘基板20的第1面与核心基板30的第1面是相同的面，电子部件内置基板以及绝缘基板20的第2面与核心基板30的第2面是相同的面。在该例中，通孔导体为圆筒形状，但贯通孔的形状和通孔导体的形状也可以是，在核心基板30的第1面F和第2面S各自的表面具有开口且各自的开口部朝向中心逐渐变细、并在中心部相连接的沙漏形状。
在核心基板30的第1面F上形成有上侧的积层55F。在积层55F中，在核心基板上和第1面侧导体布线层34F上形成有树脂绝缘层50F。在该树脂绝缘层50F上形成有导体布线层58F。导体布线层58F和第1面侧导体布线层34F通过贯通树脂绝缘层50F的过孔导体60F相连接。在树脂绝缘层50F上形成有树脂绝缘层150F。在该树脂绝缘层150F上形成有导体布线层158F。导体布线层158F和导体布线层58F通过贯通树脂绝缘层150F的过孔导体160F相连接。在树脂绝缘层150F上形成有树脂绝缘层250F。在该树脂绝缘层250F上形成有导体布线层258F。导体布线层258F和导体布线层158F通过贯通树脂绝缘层250F的过孔导体260F相连接。同样地，进一步形成有4层的树脂绝缘层350F、第1树脂绝缘层450F、第2树脂绝缘层550F、最外层的树脂绝缘层650F，并且形成有导体布线层358F、第1导体布线层458F、第2导体布线层558F、第3导体布线层658F和过孔导体360F、过孔导体460F、第1过孔导体560F、第2过孔导体660F，上侧的积层55F由7层的积层构成。
在核心基板30的第2面S上形成有下侧的积层55S。在积层55S中，在核心基板上和第2面侧导体布线层34S上形成有树脂绝缘层50S。在该树脂绝缘层50S上形成有导体布线层58S。导体布线层58S和第2面侧导体布线层34S通过贯通树脂绝缘层50S的过孔导体60S相连接。在树脂绝缘层50S上形成有树脂绝缘层150S。在该树脂绝缘层150S上形成有导体布线层158S。导体布线层158S和导体布线层58S通过贯通树脂绝缘层150S的过孔导体160S相连接。在树脂绝缘层150S上形成有树脂绝缘层250S。在该树脂绝缘层250S上形成有导体布线层258S。导体布线层258S和导体布线层158S通过贯通树脂绝缘层250S的过孔导体260S相连接。同样地，进一步形成有4层的树脂绝缘层350S、第1树脂绝缘层450S、第2树脂绝缘层550S、最外层的树脂绝缘层650S，并且形成有导体布线层358S、第1导体布线层458S、第2导体布线层558S、第3导体布线层658S和过孔导体360S、过孔导体460S、第1过孔导体560S、第2过孔导体660S，下侧的积层55S由7层的积层构成。
图1的(B)放大示出图1的(A)中的内置电子部件90的最外层的树脂绝缘层650F和与最外层的树脂绝缘层相接的第2树脂绝缘层550F。
电子部件90为CPU、存储器等IC芯片，在表层设置有再布线层。这里，示出了收纳有源元件的例子，但也能够收纳由芯片电容、电阻等无源元件构成的电子部件。
最外层的树脂绝缘层650F为第3树脂绝缘层650Fa和第4树脂绝缘层650Fb的双层构造。在第2树脂绝缘层550F和第3树脂绝缘层650Fa中形成有腔室651，在该腔室中收纳有电子部件90。在第2树脂绝缘层550F下的第1树脂绝缘层450F上形成有支承电子部件的支承导体布线层458Ff。在该支承导体布线层458Ff上借助粘接剂98配置有电子部件90。在电子部件90上覆盖有第4树脂绝缘层650Fb，电子部件90的端子(焊盘)92和第4树脂绝缘层650Fb上的第4导体焊盘658Ffp通过贯通该第4树脂绝缘层650Fb的第3过孔导体660Ff相连接。第2导体布线层558F和最外层的第3导体布线层658F通过贯通最外层的树脂绝缘层650F的第2过孔导体660F相连接。
第2树脂绝缘层的厚度t1为30μm，第3树脂绝缘层的厚度t2为10μm，第4树脂绝缘层的厚度t3为20μm。电子部件90的厚度t4为35μm，大致等于将第2树脂绝缘层的厚度t1和第3树脂绝缘层的厚度t2相加后、减去包括粘接剂98的支承导体布线层458Ff的厚度t5(5μm)而得到的值。即，腔室651的深度D1与电子部件90的厚度t4大致相等。
贯通最外层的树脂绝缘层650F的第2过孔导体660F的最大直径d1比贯通第4树脂绝缘层650Fb的第3过孔导体660Ff的最大直径d2大。与第2过孔导体660F连接的第3导体焊盘658Fp的直径f1比与第3过孔导体660Ff连接的第4导体焊盘658Ffp的直径f2大。
图9的(B)是图1的(A)所示的电子部件内置基板的俯视图。图9的(B)中的X1-X1剖面相当于图1的(A)。
在最外层的树脂绝缘层上分别呈锯齿状地配置有第3导体焊盘658Fp、第4导体焊盘658Ffp。图9的(A)示出安装有电子部件190A、190B的状态。电子部件190A的大直径侧焊盘192L经由焊料凸点194L与第3导体焊盘658Fp连接，小直径侧焊盘192M经由焊料凸点194M与第4导体焊盘658Ffp连接。并且，图10中，在图9的(A)的电子部件内置基板上形成有阻焊层70F、70S。
第1实施方式的电子部件内置基板具备：贯通最外层的树脂绝缘层650F并到达下层的第2导体布线层558F的第2过孔导体660F；以及贯通第4树脂绝缘层650Fb并到达电子部件90的焊盘92的第3过孔导体660Ff。即，与电子部件的焊盘连接的第3过孔导体660Ff仅贯通最外层的树脂绝缘层650F的第4树脂绝缘层650Fb，被贯通的树脂绝缘层较薄，因此，能够在内置的电子部件上形成密间距的第4导体焊盘658Ffp。
第4树脂绝缘层650Fb的无机填料含有量比第3树脂绝缘层650Fa的无机填料含有量多。因此，热膨胀率接近由硅构成的电子部件90，从而不易在该电子部件与第4树脂绝缘层的界面处产生裂纹。
[第1实施方式的电子部件内置基板的制造方法]
第1实施方式的电子部件内置基板10的制造方法如图2～图8所示。
(1)准备具有第1面F和与该第1面相反侧的第2面S的绝缘基板20、以及在这两面上层叠的由铜箔22、22构成的覆铜层叠板20z(图2的(A))。作为覆铜层叠板20，可以使用住友电木公司制造的ELC4785TH-G。
绝缘基板20的绝缘层由树脂和加强材料形成，作为该加强材料，例如可列举玻璃纤维织物、芳族聚酰胺纤维、玻璃纤维等。作为树脂，可列举环氧树脂、BT(双马来酰亚胺三嗪)树脂等。
(2)利用US7786390中公开的方法在绝缘基板20上形成通孔导体36、第1面侧导体布线层34F、第2面侧导体布线层34S，从而核心基板30完成(图2的(B))。
(3)在核心基板30的第1面、第2面上层叠树脂绝缘层，进而通过热压来形成树脂绝缘层50F、50S(图2的(C))，其中，该树脂绝缘层是在无机纤维中浸渍含有无机填料的树脂而构成的。这里，树脂绝缘层50S还可以使用由无机填料和树脂构成的绝缘层。
(4)利用CO2气体激光在树脂绝缘层50F上形成过孔导体用的开口51F，并在树脂绝缘层50S上形成过孔导体用的开口51S(图2的(D))。
(5)在树脂绝缘层表面和开口51F、51S的内壁上形成铜化学镀层52(图3的(A))。
(6)在铜化学镀层52上形成镀覆阻挡层54(图3的(B))。
(7)在从镀覆阻挡层54露出的铜化学镀层52上形成铜电镀层56(图3的(C))。
(8)去除镀覆阻挡层54。通过蚀刻来去除铜电镀层56之间的铜化学镀层52，从而形成导体布线层58F、58S和过孔导体60F、60S(图3的(D))。
(9)进一步重复5次图2的(C)～图3的(D)中的工序，在核心基板30的第1面F侧形成树脂绝缘层150F、250F、350F、第1树脂绝缘层450F、第2树脂绝缘层550F、导体布线层158F、258F、358F、第1导体布线层458F、第2导体布线层558F、过孔导体160F、260F、360F、460F、第1过孔导体560F。并且，在核心基板30的第2面S侧形成树脂绝缘层150S、250S、350S、第1树脂绝缘层450S、第2树脂绝缘层550S、导体布线层158S、258S、358S、第1导体布线层458S、第2导体布线层558S、过孔导体160S、260S、360S、460S、第10过孔导体560S(图4)。这里，在第2树脂绝缘层550F下的第1树脂绝缘层450F上，与第1导体布线层458F同时地形成载置电子部件的支承导体布线层458Ff。
(10)在第2树脂绝缘层550F、550S和第2导体布线层558F、558S上层叠构成最外层的树脂绝缘层的一部分的10μm的内层侧的树脂绝缘层(第3树脂绝缘层)650Fa、650Sa，并使其成为半硬化状态(图5的(A))。
(11)利用激光在第3树脂绝缘层650Fa和第2树脂绝缘层550F上形成到达支承导体布线层458Ff的切缝，取出被切断的第3树脂绝缘层650Fa和第2树脂绝缘层550F的部位，从而形成腔室651(图5的(B))。腔室651带有锥度。由于第3树脂绝缘层650Fa为半硬化状态，所以激光加工的形状性优异。
(12)进行去钻污处理，去除支承导体布线层458Ff上的因激光切断而形成的残渣(图6的(A))。这时，在第2树脂绝缘层550F上的第2导体布线层558F上覆盖有第3树脂绝缘层650Fa的状态下进行去钻污处理，因此，在第2树脂绝缘层550F和第2导体布线层558F之间不会产生间隙，该第2导体布线层558F的可靠性不会下降。还可以对支承导体布线层458Ff进行粗糙化处理。
(13)借助粘接剂98在支承导体布线层458Ff上配置电子部件90(图6的(B))。
(14)在第1面侧，在电子部件90和第3树脂绝缘层650Fa上层叠20μm的第4树脂绝缘层650Fb，在腔室651内和电子部件90之间填充源于第4树脂绝缘层的树脂650。这时，由于腔室带有锥度，所以树脂的填充容易。在第2面侧，在第3树脂绝缘层650Sa上层叠20μm的第4树脂绝缘层650Sb(图7的(A))。这里，第4树脂绝缘层650Fb、650Sb的厚度比第3树脂绝缘层650Fa、650Sa厚，并且，无机填料量较多。之后，使第4树脂绝缘层650Fb、650Sb成为半硬化状态(图7的(B))。
(15)在第1面侧，利用激光来形成贯通最外层的树脂绝缘层(第3树脂绝缘层和第4树脂绝缘层)650F并到达第2导体布线层558F的第3开口651F、以及贯通第4树脂绝缘层650Fb并到达电子部件的焊盘92的第4开口651Ff。在第2面侧，利用激光来形成贯通最外层的树脂绝缘层(第3树脂绝缘层和第4树脂绝缘层)650S并到达第2导体布线层558S的第3开口651S(图8的(A))。由于第4树脂绝缘层650Fb、650Sb为半硬化状态，所以激光加工的形状性优异。
(16)在第4树脂绝缘层650Fb、650Sb上以及第3开口651F、651S、第2开口651Ff的内壁上形成铜化学镀层652(图8的(B))。
(17)进一步重复图3的(B)～图3的(D)中的工序，在第1面侧的最外层的树脂绝缘层650F中形成第2过孔导体660F、第3过孔导体660Ff、第3导体布线层658F。在第2面侧的最外层的树脂绝缘层650S上形成第2过孔导体660S、第3导体布线层658S(图1)。由此，电子部件内置基板完成。
另外，还可以在最外层的树脂绝缘层上形成阻焊层。并且，还可以在第3导体布线层658F、658S上实施表面处理。表面处理中可以形成镍-金层(Ni/Au)、镀Sn、镍-钯-金层(Ni/Pd/Au)、镀Pd/Ag、OSP(Organic Solderability Preservative：有机可焊保护剂)膜。
(18)在第1面侧的利用导体布线层658F形成的第3导体焊盘658Fp、第4导体焊盘658Ffp处，在电子部件内置基板上安装电子部件190A、190B。电子部件190A的大直径侧焊盘192L经由焊料凸点194L与第3导体焊盘658Fp连接，小直径侧焊盘192M经由焊料凸点194M与第4导体焊盘658Ffp连接。
在第1实施方式的制造方法中，在第2树脂绝缘层550F上的第2导体布线层558F上覆盖有第3树脂绝缘层650Fa的状态下进行去钻污处理，因此，在第2树脂绝缘层550F和第2导体布线层558F之间不会产生间隙，该第2导体布线层558F的可靠性不会下降。
而且，形成贯通最外层的树脂绝缘层650F并到达第2导体布线层558F的第2过孔用开口651F、以及贯通第4树脂绝缘层650Fb并到达电子部件90的焊盘92的第3过孔用开口651Ff，在第2过孔用开口中形成第2过孔导体650F，在第3过孔用开口中形成第3过孔导体650Ff。即，与电子部件的焊盘连接的第3过孔导体仅贯通最外层的树脂绝缘层的第4树脂绝缘层，被贯通的树脂绝缘层较薄，因此，能够在内置的电子部件上形成密间距的焊盘(第4导体焊盘)。
[第2实施方式]
图11的(A)示出第2实施方式的电子部件内置基板，图11的(B)是图11的(A)的局部放大图。
第2实施方式的电子部件内置基板为第1树脂绝缘层450F、第2树脂绝缘层550F和最外层的树脂绝缘层650F这3层构造的不具备核心基板的积层式的层叠基板。
最外层的树脂绝缘层650F为第3树脂绝缘层650Fa和第4树脂绝缘层650Fb的双层构造。在第2树脂绝缘层550F和第3树脂绝缘层650Fa中形成有腔室651，在该腔室中收纳有电子部件90。在第2树脂绝缘层550F下的第1树脂绝缘层450F上形成有支承电子部件的支承导体布线层458Ff。在该支承导体布线层458Ff上借助粘接剂98配置有电子部件90。在电子部件90上覆盖有第4树脂绝缘层650Fb，电子部件90的端子(焊盘)92和第4树脂绝缘层650Fb上的第4导体焊盘658Ffp通过贯通该第4树脂绝缘层650Fb的第3过孔导体660Ff相连接。下层的第2导体布线层558F和最外层的第3导体布线层658F通过贯通最外层的树脂绝缘层650F的第2过孔导体660F相连接。在第1树脂绝缘层450F上形成有第1导体布线层458F，该第1导体布线层458F经由过孔导体460F与表层的焊盘34F连接。
[第2实施方式的变形例]
图11的(C)示出第2实施方式的变形例的电子部件内置基板。在第2实施方式的变形例的电子部件内置基板中，支承导体布线层458Ff和接地用焊盘34Fe经由接地用过孔导体460Fe相连接。在第2实施方式的变形例中，粘接剂98使用了具有导电性的粘接剂。

Claims (15)

1.一种电子部件内置基板，其内置有电子部件，所述电子部件内置基板具有：
第1树脂绝缘层；
第1导体布线层，其形成在该第1树脂绝缘层上并包括第1导体焊盘；
第2树脂绝缘层，其层叠在所述第1树脂绝缘层、所述第1导体布线层上；
第2导体布线层，其形成在所述第2树脂绝缘层上并包括第2导体焊盘；
第1过孔导体，其贯通所述第2树脂绝缘层并将第1导体焊盘和所述第2导体焊盘连接起来；
第3树脂绝缘层，其层叠在所述第2树脂绝缘层、所述第2导体布线层上；
腔室，其贯通所述第2树脂绝缘层和第3树脂绝缘层，用于内置所形成的电子部件；
电子部件，其被内置于所述腔室并具有端子；
第4树脂绝缘层，其层叠在所述第3树脂绝缘层和所述电子部件上；
第3导体布线层，其形成在所述第4树脂绝缘层上并包括第3导体焊盘和第4导体焊盘；
第2过孔导体，其将所述第2导体焊盘和所述第3导体焊盘连接起来；以及
第3过孔导体，其将所述电子部件的端子和所述第4导体焊盘连接起来，
在所述电子部件内置基板中，
所述第2过孔导体贯通第3树脂绝缘层和第4树脂绝缘层，并且所述第2过孔导体是利用填充镀覆进行填充而成的，
所述第3过孔导体贯通第4树脂绝缘层，并且所述第3过孔导体是利用填充镀覆进行填充而成的。
2.根据权利要求1所述的电子部件内置基板，其中，
所述第1导体布线的一部分为配置有所述电子部件的支承导体布线层。
3.根据权利要求1所述的电子部件内置基板，其中，
所述腔室形成为锥形。
4.根据权利要求3所述的电子部件内置基板，其中，
在所述腔室和所述电子部件之间填充有源于所述第4树脂绝缘层的树脂。
5.根据权利要求1所述的电子部件内置基板，其中，
所述第4树脂绝缘层的厚度比所述第3树脂绝缘层的厚度厚。
6.根据权利要求1所述的电子部件内置基板，其中，
配置有所述电子部件的支承导体布线层被接地。
7.根据权利要求2所述的电子部件内置基板，其中，
所述腔室的底面积比所述电子部件的投影面积大，所述支承导体布线层的面积比所述腔室的底面积大。
8.根据权利要求1所述的电子部件内置基板，其中，
在所述支承导体布线层和所述电子部件之间配置有粘接剂。
9.根据权利要求1所述的电子部件内置基板，其中，
所述腔室的深度与所述电子部件的厚度大致相等。
10.根据权利要求1所述的电子部件内置基板，其中，
所述电子部件形成有再布线层。
11.根据权利要求1所述的电子部件内置基板，其中，
所述第4树脂绝缘层的无机填料含有量比所述第3树脂绝缘层的无机填料含有量多。
12.一种电子部件内置基板的制造方法，其包含如下步骤：
在第1树脂绝缘层上形成包括第1导体焊盘和电子部件配置用的支承导体布线层的第1导体布线层；
在所述第1树脂绝缘层和所述第1导体布线层上层叠第2树脂绝缘层；
形成贯通所述第2树脂绝缘层并到达所述第1导体焊盘的第1过孔导体，并且，在所述第2树脂绝缘层上形成包括与该第1过孔导体连接的第2导体焊盘的第2导体布线层；
在所述第2树脂绝缘层和所述第2导体布线层上层叠第3树脂绝缘层；
利用激光形成贯通所述第3树脂绝缘层和所述第2树脂绝缘层而使所述支承导体布线层的一部分露出的腔室；
对所述腔室实施去钻污处理；
在所述支承导体布线层上配置电子部件；
在所述第3树脂绝缘层和所述电子部件上层叠第4树脂绝缘层；
形成贯通所述第3树脂绝缘层和第4树脂绝缘层并到达所述第2导体焊盘的第2过孔用开口、和贯通所述第4树脂绝缘层并到达所述电子部件的焊盘的第3过孔用开口；以及
通过镀覆，在所述第2过孔用开口中形成第2过孔导体，在所述第3过孔用开口中形成第3过孔导体，并且，在所述第4树脂绝缘层上形成与所述第2过孔导体连接的第3导体焊盘和与所述第3过孔导体连接的第4导体焊盘。
13.根据权利要求12所述的电子部件内置基板的制造方法，其中，
在所述去钻污处理之后，在从所述腔室露出的支承导体布线层的表面形成粗糙化层。
14.根据权利要求12所述的电子部件内置基板的制造方法，其中，
在所述第2树脂绝缘层和第2导体布线层上层叠所述第3树脂绝缘层之后，使该第3树脂绝缘层成为半硬化状态。
15.根据权利要求12所述的电子部件内置基板的制造方法，其中，
在所述第3树脂绝缘层上层叠所述第4树脂绝缘层之后，使该第4树脂绝缘层成为半硬化状态。
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