CN104576899A - 发光装置的制造方法 - Google Patents
发光装置的制造方法 Download PDFInfo
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- CN104576899A CN104576899A CN201410769338.3A CN201410769338A CN104576899A CN 104576899 A CN104576899 A CN 104576899A CN 201410769338 A CN201410769338 A CN 201410769338A CN 104576899 A CN104576899 A CN 104576899A
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- light
- phosphor
- emitting device
- manufacturing
- phosphor dispersion
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Classifications
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/85—Packages
- H10H20/851—Wavelength conversion means
- H10H20/8511—Wavelength conversion means characterised by their material, e.g. binder
- H10H20/8512—Wavelength conversion materials
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/01—Manufacture or treatment
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/01—Manufacture or treatment
- H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
- H10H20/013—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials
- H10H20/0137—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials the light-emitting regions comprising nitride materials
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/85—Packages
- H10H20/851—Wavelength conversion means
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/85—Packages
- H10H20/851—Wavelength conversion means
- H10H20/8511—Wavelength conversion means characterised by their material, e.g. binder
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/85—Packages
- H10H20/852—Encapsulations
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/85—Packages
- H10H20/852—Encapsulations
- H10H20/854—Encapsulations characterised by their material, e.g. epoxy or silicone resins
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/01—Manufacture or treatment
- H10H20/036—Manufacture or treatment of packages
- H10H20/0361—Manufacture or treatment of packages of wavelength conversion means
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- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN107611241A (zh) * | 2017-10-23 | 2018-01-19 | 苏州创思得新材料有限公司 | 一种多相复合的Re,Ce:YAG陶瓷荧光片及其制备方法 |
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| JP5310700B2 (ja) * | 2010-10-27 | 2013-10-09 | パナソニック株式会社 | Ｌｅｄパッケージ製造システムおよびｌｅｄパッケージ製造システムにおける樹脂塗布方法 |
| JP5310699B2 (ja) * | 2010-10-27 | 2013-10-09 | パナソニック株式会社 | 樹脂塗布装置および樹脂塗布方法 |
| US9260654B2 (en) * | 2011-03-11 | 2016-02-16 | Konica Minolta, Inc. | Manufacturing method for light emitting device and phosphor mixture |
| JP5413404B2 (ja) | 2011-05-30 | 2014-02-12 | パナソニック株式会社 | Ｌｅｄパッケージ製造システムおよびｌｅｄパッケージ製造システムにおける樹脂塗布方法 |
| JP5413405B2 (ja) * | 2011-05-30 | 2014-02-12 | パナソニック株式会社 | 樹脂塗布装置および樹脂塗布方法 |
| EP2752897A4 (en) * | 2011-10-07 | 2015-04-29 | Konica Minolta Inc | MANUFACTURING METHOD FÜRLED DEVICE AND FLUORESCENT FABRICED DISPERSED SOLUTION USING THEREOF |
| WO2013121646A1 (ja) * | 2012-02-16 | 2013-08-22 | コニカミノルタ株式会社 | 発光装置の製造方法及び蛍光体塗布装置 |
| JP2013258339A (ja) * | 2012-06-13 | 2013-12-26 | Konica Minolta Inc | 発光装置及びその製造方法 |
| EP2853577A4 (en) | 2012-08-13 | 2016-01-06 | Konica Minolta Inc | METHOD FOR PRODUCING A PHOSPHORDISPERSION LIQUID AND METHOD FOR PRODUCING AN LED DEVICE |
| DE102012112316A1 (de) * | 2012-12-14 | 2014-06-18 | Osram Opto Semiconductors Gmbh | Verfahren und Vorrichtung zur Herstellung eines Strahlung emittierenden Halbleiterbauelements und Strahlung emittierendes Halbleiterbauelement |
| JP5994628B2 (ja) * | 2012-12-26 | 2016-09-21 | 日亜化学工業株式会社 | 発光装置の製造方法およびスプレーコーティング装置 |
| EP2940744A4 (en) * | 2012-12-27 | 2016-06-29 | Konica Minolta Inc | PHOSPHORDISPERSION, LED DEVICE AND METHOD FOR THE PRODUCTION THEREOF |
| WO2014199926A1 (ja) * | 2013-06-13 | 2014-12-18 | 旭硝子株式会社 | 蛍光体分散シートの色度座標検査方法、蛍光体分散シートの製造方法、光変換部材の製造方法およびｌｅｄパッケージの製造方法 |
| KR101474376B1 (ko) * | 2013-11-28 | 2014-12-18 | 주식회사 말콤 | 온도표시기능을 구비하는 led패키지용 시린지 및 이를 이용하는 led패키지 제조방법 |
| CN103840068B (zh) * | 2013-12-31 | 2017-09-19 | 杨毅 | 波长转换装置和发光装置 |
| TWI575778B (zh) * | 2014-05-07 | 2017-03-21 | 新世紀光電股份有限公司 | 發光二極體封裝結構 |
| KR102237112B1 (ko) | 2014-07-30 | 2021-04-08 | 엘지이노텍 주식회사 | 발광 소자 및 이를 구비한 광원 모듈 |
| KR20180011398A (ko) | 2016-07-21 | 2018-02-01 | 삼성디스플레이 주식회사 | 표시 장치 및 이의 제조 방법 |
| KR102053614B1 (ko) * | 2018-06-19 | 2019-12-09 | 주식회사 네모엘텍 | 퀀텀닷 led 조명 및 제조 장치 |
| CN108962798B (zh) * | 2018-08-03 | 2024-07-05 | 华南理工大学 | 三基色rgb-led全自动荧光粉胶高速智能涂覆设备及方法 |
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- 2011-08-02 WO PCT/JP2011/067635 patent/WO2012023425A1/ja not_active Ceased
- 2011-08-02 US US13/817,371 patent/US8835192B2/en not_active Expired - Fee Related
- 2011-08-02 CN CN201180040060.0A patent/CN103081142B/zh not_active Expired - Fee Related
- 2011-08-02 US US13/817,320 patent/US9153752B2/en active Active
- 2011-08-02 JP JP2012529552A patent/JP5299577B2/ja not_active Expired - Fee Related
- 2011-08-02 EP EP11818067.8A patent/EP2608284A1/en not_active Withdrawn
- 2011-08-02 CN CN201410769338.3A patent/CN104576899A/zh active Pending
- 2011-08-02 WO PCT/JP2011/067634 patent/WO2012023424A1/ja not_active Ceased
- 2011-08-02 JP JP2012529551A patent/JP5870923B2/ja not_active Expired - Fee Related
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Also Published As
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| JP5870923B2 (ja) | 2016-03-01 |
| CN103081142A (zh) | 2013-05-01 |
| JP2013229621A (ja) | 2013-11-07 |
| KR101478472B1 (ko) | 2014-12-31 |
| WO2012023424A1 (ja) | 2012-02-23 |
| JPWO2012023425A1 (ja) | 2013-10-28 |
| KR20130028148A (ko) | 2013-03-18 |
| US8835192B2 (en) | 2014-09-16 |
| CN103081142B (zh) | 2015-01-14 |
| US20130149801A1 (en) | 2013-06-13 |
| US9153752B2 (en) | 2015-10-06 |
| US20130143343A1 (en) | 2013-06-06 |
| WO2012023425A1 (ja) | 2012-02-23 |
| JPWO2012023424A1 (ja) | 2013-10-28 |
| US9306130B2 (en) | 2016-04-05 |
| JP5900425B2 (ja) | 2016-04-06 |
| EP2608284A1 (en) | 2013-06-26 |
| JP5299577B2 (ja) | 2013-09-25 |
| US20140349419A1 (en) | 2014-11-27 |
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