CN104576667A - 堆叠芯片spad图像传感器 - Google Patents
堆叠芯片spad图像传感器 Download PDFInfo
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- CN104576667A CN104576667A CN201410252328.2A CN201410252328A CN104576667A CN 104576667 A CN104576667 A CN 104576667A CN 201410252328 A CN201410252328 A CN 201410252328A CN 104576667 A CN104576667 A CN 104576667A
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- 239000004065 semiconductor Substances 0.000 claims abstract description 73
- 238000003384 imaging method Methods 0.000 claims abstract description 64
- 238000010791 quenching Methods 0.000 claims description 40
- 230000000171 quenching effect Effects 0.000 claims description 38
- 208000003580 polydactyly Diseases 0.000 claims description 10
- 230000008878 coupling Effects 0.000 claims description 8
- 238000010168 coupling process Methods 0.000 claims description 8
- 238000005859 coupling reaction Methods 0.000 claims description 8
- 229910052710 silicon Inorganic materials 0.000 claims description 6
- 239000010703 silicon Substances 0.000 claims description 6
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- 238000010586 diagram Methods 0.000 description 9
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- 230000015556 catabolic process Effects 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
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- 230000001960 triggered effect Effects 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 3
- 230000006870 function Effects 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
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- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
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- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14603—Special geometry or disposition of pixel-elements, address-lines or gate-electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14634—Assemblies, i.e. Hybrid structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1464—Back illuminated imager structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/71—Charge-coupled device [CCD] sensors; Charge-transfer registers specially adapted for CCD sensors
- H04N25/75—Circuitry for providing, modifying or processing image signals from the pixel array
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
- H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
- H04N25/772—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components comprising A/D, V/T, V/F, I/T or I/F converters
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Multimedia (AREA)
- Signal Processing (AREA)
- Solid State Image Pick-Up Elements (AREA)
Abstract
Description
Claims (26)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US14/065,275 | 2013-10-28 | ||
US14/065,275 US9299732B2 (en) | 2013-10-28 | 2013-10-28 | Stacked chip SPAD image sensor |
Publications (2)
Publication Number | Publication Date |
---|---|
CN104576667A true CN104576667A (zh) | 2015-04-29 |
CN104576667B CN104576667B (zh) | 2017-08-11 |
Family
ID=52994332
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201410252328.2A Active CN104576667B (zh) | 2013-10-28 | 2014-06-09 | 堆叠芯片spad图像传感器 |
Country Status (4)
Country | Link |
---|---|
US (1) | US9299732B2 (zh) |
CN (1) | CN104576667B (zh) |
HK (1) | HK1209897A1 (zh) |
TW (1) | TWI543350B (zh) |
Cited By (9)
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CN106303306A (zh) * | 2015-06-22 | 2017-01-04 | 豪威科技股份有限公司 | 具有单光子雪崩二极管和传感器平移的成像系统,及相关的方法 |
CN106298715A (zh) * | 2015-06-25 | 2017-01-04 | 台湾积体电路制造股份有限公司 | 混合接合焊盘结构 |
WO2017219223A1 (en) * | 2016-06-21 | 2017-12-28 | Shenzhen Genorivision Technology Co. Ltd. | An image sensor with large dynamic range |
CN107923987A (zh) * | 2015-09-08 | 2018-04-17 | 深圳帧观德芯科技有限公司 | 用于制作x射线检测器的方法 |
CN108475689A (zh) * | 2016-10-18 | 2018-08-31 | 索尼半导体解决方案公司 | 光电探测器 |
CN109155324A (zh) * | 2016-03-15 | 2019-01-04 | 达特茅斯学院 | 具有集群并行读出的堆叠背照式量子图像传感器 |
CN111095471A (zh) * | 2017-09-18 | 2020-05-01 | Asml荷兰有限公司 | 现场可编程检测器阵列 |
US20210242261A1 (en) * | 2020-01-30 | 2021-08-05 | Semiconductor Components Industries, Llc | Semiconductor devices with single-photon avalanche diodes and rectangular microlenses |
CN114361192A (zh) * | 2020-10-12 | 2022-04-15 | 意法半导体(R&D)有限公司 | Spad像素 |
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US9992477B2 (en) | 2015-09-24 | 2018-06-05 | Ouster, Inc. | Optical system for collecting distance information within a field |
KR101785793B1 (ko) * | 2015-10-27 | 2017-11-15 | 연세대학교 산학협력단 | 체내 투입 장비 및 그를 이용한 진단 장치 |
US10014340B2 (en) * | 2015-12-28 | 2018-07-03 | Taiwan Semiconductor Manufacturing Co., Ltd. | Stacked SPAD image sensor |
US10560652B2 (en) * | 2016-04-22 | 2020-02-11 | Sony Corporation | Stacked solid-state image sensor comprising vertical transistor for generating a pixel signal, switching between first and second driving methods thereof, and electronic apparatus |
US10269854B2 (en) * | 2016-04-26 | 2019-04-23 | Taiwan Semiconductor Manufacturing Co., Ltd. | Rerouting method and a structure for stacked image sensors |
GB2551483B (en) * | 2016-06-13 | 2020-05-27 | Toshiba Res Europe Limited | A photon detection device and a method of manufacturing a photon detection device |
US10545193B2 (en) | 2016-07-13 | 2020-01-28 | Stmicroelectronics (Research & Development) Limited | Charge pump overload detection |
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KR102460077B1 (ko) | 2016-08-05 | 2022-10-28 | 삼성전자주식회사 | 스택 이미지 센서 패키지 및 이를 포함하는 스택 이미지 센서 모듈 |
GB201704203D0 (en) | 2017-03-16 | 2017-05-03 | Pixquanta Ltd | An electromagnetic radiation detection device |
JP6929671B2 (ja) | 2017-03-17 | 2021-09-01 | キヤノン株式会社 | 撮像装置及び撮像システム |
US10312275B2 (en) | 2017-04-25 | 2019-06-04 | Semiconductor Components Industries, Llc | Single-photon avalanche diode image sensor with photon counting and time-of-flight detection capabilities |
US10636930B2 (en) | 2017-09-29 | 2020-04-28 | Taiwan Semiconductor Manufacturing Company Ltd. | SPAD image sensor and associated fabricating method |
US10204950B1 (en) * | 2017-09-29 | 2019-02-12 | Taiwan Semiconductor Manufacturing Company Ltd. | SPAD image sensor and associated fabricating method |
KR20200106202A (ko) * | 2018-01-26 | 2020-09-11 | 하마마츠 포토닉스 가부시키가이샤 | 광 검출 장치 |
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US11221400B2 (en) * | 2018-03-27 | 2022-01-11 | Omnivision Technologies, Inc. | Dual mode stacked photomultipliers suitable for use in long range time of flight applications |
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JP7261005B2 (ja) * | 2018-12-26 | 2023-04-19 | キヤノン株式会社 | 画像処理装置及び方法、及び撮像装置、及び撮像素子の制御方法 |
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2013
- 2013-10-28 US US14/065,275 patent/US9299732B2/en active Active
-
2014
- 2014-06-09 CN CN201410252328.2A patent/CN104576667B/zh active Active
- 2014-07-21 TW TW103124991A patent/TWI543350B/zh active
-
2015
- 2015-10-19 HK HK15110230.2A patent/HK1209897A1/zh unknown
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Cited By (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN106303306A (zh) * | 2015-06-22 | 2017-01-04 | 豪威科技股份有限公司 | 具有单光子雪崩二极管和传感器平移的成像系统,及相关的方法 |
CN106303306B (zh) * | 2015-06-22 | 2019-03-26 | 豪威科技股份有限公司 | 具有单光子雪崩二极管和传感器平移的成像系统,及相关的方法 |
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US9299732B2 (en) | 2016-03-29 |
TW201523847A (zh) | 2015-06-16 |
CN104576667B (zh) | 2017-08-11 |
US20150115131A1 (en) | 2015-04-30 |
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