HK1209897A1 - 堆叠芯片 圖像傳感器 - Google Patents
堆叠芯片 圖像傳感器Info
- Publication number
- HK1209897A1 HK1209897A1 HK15110230.2A HK15110230A HK1209897A1 HK 1209897 A1 HK1209897 A1 HK 1209897A1 HK 15110230 A HK15110230 A HK 15110230A HK 1209897 A1 HK1209897 A1 HK 1209897A1
- Authority
- HK
- Hong Kong
- Prior art keywords
- spad
- image sensor
- stacked chip
- stacked
- chip
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14603—Special geometry or disposition of pixel-elements, address-lines or gate-electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14634—Assemblies, i.e. Hybrid structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1464—Back illuminated imager structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/71—Charge-coupled device [CCD] sensors; Charge-transfer registers specially adapted for CCD sensors
- H04N25/75—Circuitry for providing, modifying or processing image signals from the pixel array
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
- H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
- H04N25/772—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components comprising A/D, V/T, V/F, I/T or I/F converters
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Multimedia (AREA)
- Signal Processing (AREA)
- Solid State Image Pick-Up Elements (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US14/065,275 US9299732B2 (en) | 2013-10-28 | 2013-10-28 | Stacked chip SPAD image sensor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| HK1209897A1 true HK1209897A1 (zh) | 2016-04-08 |
Family
ID=52994332
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| HK15110230.2A HK1209897A1 (zh) | 2013-10-28 | 2015-10-19 | 堆叠芯片 圖像傳感器 |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US9299732B2 (zh) |
| CN (1) | CN104576667B (zh) |
| HK (1) | HK1209897A1 (zh) |
| TW (1) | TWI543350B (zh) |
Families Citing this family (74)
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| US9628735B2 (en) * | 2015-06-22 | 2017-04-18 | Omnivision Technologies, Inc. | Imaging systems with single-photon-avalanche-diodes and sensor translation, and associated methods |
| US9704827B2 (en) | 2015-06-25 | 2017-07-11 | Taiwan Semiconductor Manufacturing Co., Ltd. | Hybrid bond pad structure |
| US10007007B2 (en) * | 2015-09-08 | 2018-06-26 | Shenzhen Xpectvision Technology Co., Ltd. | Methods for making an X-ray detector |
| US9992477B2 (en) | 2015-09-24 | 2018-06-05 | Ouster, Inc. | Optical system for collecting distance information within a field |
| KR101785793B1 (ko) * | 2015-10-27 | 2017-11-15 | 연세대학교 산학협력단 | 체내 투입 장비 및 그를 이용한 진단 장치 |
| US10014340B2 (en) * | 2015-12-28 | 2018-07-03 | Taiwan Semiconductor Manufacturing Co., Ltd. | Stacked SPAD image sensor |
| US11924573B2 (en) * | 2016-03-15 | 2024-03-05 | Trustees Of Dartmouth College | Stacked backside-illuminated quanta image sensor with cluster-parallel readout |
| EP3447801A4 (en) * | 2016-04-22 | 2020-03-25 | Sony Corporation | SOLID IMAGING ELEMENT, CONTROL METHOD AND ELECTRONIC DEVICE |
| US10269854B2 (en) * | 2016-04-26 | 2019-04-23 | Taiwan Semiconductor Manufacturing Co., Ltd. | Rerouting method and a structure for stacked image sensors |
| GB2551483B (en) * | 2016-06-13 | 2020-05-27 | Toshiba Res Europe Limited | A photon detection device and a method of manufacturing a photon detection device |
| WO2017219223A1 (en) * | 2016-06-21 | 2017-12-28 | Shenzhen Genorivision Technology Co. Ltd. | An image sensor with large dynamic range |
| US10545193B2 (en) | 2016-07-13 | 2020-01-28 | Stmicroelectronics (Research & Development) Limited | Charge pump overload detection |
| KR102544782B1 (ko) | 2016-08-04 | 2023-06-20 | 삼성전자주식회사 | 반도체 패키지 및 그 제조 방법 |
| KR102460077B1 (ko) | 2016-08-05 | 2022-10-28 | 삼성전자주식회사 | 스택 이미지 센서 패키지 및 이를 포함하는 스택 이미지 센서 모듈 |
| WO2018074530A1 (en) * | 2016-10-18 | 2018-04-26 | Sony Semiconductor Solutions Corporation | Photodetector |
| GB201704203D0 (en) | 2017-03-16 | 2017-05-03 | Pixquanta Ltd | An electromagnetic radiation detection device |
| JP6929671B2 (ja) | 2017-03-17 | 2021-09-01 | キヤノン株式会社 | 撮像装置及び撮像システム |
| US10312275B2 (en) | 2017-04-25 | 2019-06-04 | Semiconductor Components Industries, Llc | Single-photon avalanche diode image sensor with photon counting and time-of-flight detection capabilities |
| CN111095471B (zh) * | 2017-09-18 | 2023-01-24 | Asml荷兰有限公司 | 现场可编程检测器阵列 |
| US10204950B1 (en) * | 2017-09-29 | 2019-02-12 | Taiwan Semiconductor Manufacturing Company Ltd. | SPAD image sensor and associated fabricating method |
| US10636930B2 (en) | 2017-09-29 | 2020-04-28 | Taiwan Semiconductor Manufacturing Company Ltd. | SPAD image sensor and associated fabricating method |
| WO2019146725A1 (ja) | 2018-01-26 | 2019-08-01 | 浜松ホトニクス株式会社 | 光検出装置 |
| JP7461745B2 (ja) * | 2018-01-26 | 2024-04-04 | 浜松ホトニクス株式会社 | 光検出装置 |
| JP7114264B2 (ja) | 2018-02-09 | 2022-08-08 | キヤノン株式会社 | 光電変換装置及び撮像システム |
| JP7039310B2 (ja) | 2018-02-09 | 2022-03-22 | キヤノン株式会社 | 光電変換装置及び撮像システム |
| US11221400B2 (en) | 2018-03-27 | 2022-01-11 | Omnivision Technologies, Inc. | Dual mode stacked photomultipliers suitable for use in long range time of flight applications |
| US10340408B1 (en) | 2018-05-17 | 2019-07-02 | Hi Llc | Non-invasive wearable brain interface systems including a headgear and a plurality of self-contained photodetector units configured to removably attach to the headgear |
| US10158038B1 (en) | 2018-05-17 | 2018-12-18 | Hi Llc | Fast-gated photodetector architectures comprising dual voltage sources with a switch configuration |
| WO2019221799A1 (en) * | 2018-05-17 | 2019-11-21 | Hi Llc | Stacked photodetector assemblies |
| US10420498B1 (en) | 2018-06-20 | 2019-09-24 | Hi Llc | Spatial and temporal-based diffusive correlation spectroscopy systems and methods |
| US11089251B2 (en) * | 2018-07-12 | 2021-08-10 | Canon Kabushiki Kaisha | Image sensor and image capturing apparatus |
| US11213206B2 (en) | 2018-07-17 | 2022-01-04 | Hi Llc | Non-invasive measurement systems with single-photon counting camera |
| US11006876B2 (en) | 2018-12-21 | 2021-05-18 | Hi Llc | Biofeedback for awareness and modulation of mental state using a non-invasive brain interface system and method |
| JP7261005B2 (ja) * | 2018-12-26 | 2023-04-19 | キヤノン株式会社 | 画像処理装置及び方法、及び撮像装置、及び撮像素子の制御方法 |
| WO2020144211A1 (en) * | 2019-01-11 | 2020-07-16 | PixQuanta Limited | An electromagnetic radiation detection device |
| KR20200097841A (ko) | 2019-02-08 | 2020-08-20 | 삼성전자주식회사 | 이미지 센서 장치 |
| KR20200098802A (ko) | 2019-02-12 | 2020-08-21 | 삼성전자주식회사 | 디지털 픽셀을 포함하는 이미지 센서 |
| JP7327949B2 (ja) | 2019-02-27 | 2023-08-16 | キヤノン株式会社 | 光電変換装置、光電変換システム、及び移動体 |
| US10784302B1 (en) | 2019-03-07 | 2020-09-22 | Semiconductor Components Industries, Llc | Semiconductor device with single-photon avalanche diode pixels and a light attenuating layer |
| CN113795737A (zh) | 2019-05-06 | 2021-12-14 | Hi有限责任公司 | 用于时间相关的单光子计数的光电探测器架构 |
| WO2020236371A1 (en) | 2019-05-21 | 2020-11-26 | Hi Llc | Photodetector architectures for efficient fast-gating |
| CN113766871A (zh) | 2019-06-06 | 2021-12-07 | Hi有限责任公司 | 具有低功率的时间数字转换器架构的光电检测器系统 |
| JP7292135B2 (ja) * | 2019-07-09 | 2023-06-16 | キヤノン株式会社 | 撮像素子及び撮像装置 |
| JP2021027277A (ja) | 2019-08-08 | 2021-02-22 | キヤノン株式会社 | 光電変換装置、光電変換システム |
| DE102020101246A1 (de) * | 2019-08-29 | 2021-03-04 | Taiwan Semiconductor Manufacturing Co. Ltd. | Leitfähiger kontakt für ionen-substratdurchkontaktierung |
| US11398516B2 (en) | 2019-08-29 | 2022-07-26 | Taiwan Semiconductor Manufacturing Company, Ltd. | Conductive contact for ion through-substrate via |
| JPWO2021044771A1 (zh) * | 2019-09-06 | 2021-03-11 | ||
| JP2021082973A (ja) | 2019-11-20 | 2021-05-27 | キヤノン株式会社 | 撮像装置、撮像システム、および移動体 |
| WO2021148603A1 (en) * | 2020-01-22 | 2021-07-29 | MAX-PLANCK-Gesellschaft zur Förderung der Wissenschaften e.V. | A semiconductor photomultiplier module comprising a stacked configuration of a sensor chip and electronic readout chips |
| US11646335B2 (en) * | 2020-01-30 | 2023-05-09 | Semiconductor Components Industries, Llc | Semiconductor devices with single-photon avalanche diodes and rectangular microlenses |
| JP7492338B2 (ja) | 2020-01-30 | 2024-05-29 | キヤノン株式会社 | 光電変換装置、光電変換システム及び移動体 |
| US11554589B2 (en) | 2020-02-19 | 2023-01-17 | Canon Kabushiki Kaisha | Liquid container and method of manufacturing the same |
| US11630310B2 (en) | 2020-02-21 | 2023-04-18 | Hi Llc | Wearable devices and wearable assemblies with adjustable positioning for use in an optical measurement system |
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| US11187575B2 (en) | 2020-03-20 | 2021-11-30 | Hi Llc | High density optical measurement systems with minimal number of light sources |
| US11857348B2 (en) | 2020-03-20 | 2024-01-02 | Hi Llc | Techniques for determining a timing uncertainty of a component of an optical measurement system |
| WO2021188487A1 (en) | 2020-03-20 | 2021-09-23 | Hi Llc | Temporal resolution control for temporal point spread function generation in an optical measurement system |
| US11864867B2 (en) | 2020-03-20 | 2024-01-09 | Hi Llc | Control circuit for a light source in an optical measurement system by applying voltage with a first polarity to start an emission of a light pulse and applying voltage with a second polarity to stop the emission of the light pulse |
| US11645483B2 (en) | 2020-03-20 | 2023-05-09 | Hi Llc | Phase lock loop circuit based adjustment of a measurement time window in an optical measurement system |
| US11877825B2 (en) | 2020-03-20 | 2024-01-23 | Hi Llc | Device enumeration in an optical measurement system |
| US11245404B2 (en) | 2020-03-20 | 2022-02-08 | Hi Llc | Phase lock loop circuit based signal generation in an optical measurement system |
| WO2021188496A1 (en) | 2020-03-20 | 2021-09-23 | Hi Llc | Photodetector calibration of an optical measurement system |
| WO2021188485A1 (en) | 2020-03-20 | 2021-09-23 | Hi Llc | Maintaining consistent photodetector sensitivity in an optical measurement system |
| JP2021197596A (ja) | 2020-06-11 | 2021-12-27 | キヤノン株式会社 | 光電変換装置 |
| FR3115158B1 (fr) * | 2020-10-12 | 2022-10-14 | St Microelectronics Res & Dev Ltd | Pixel à SPAD |
| CN112397542B (zh) * | 2020-11-16 | 2023-04-07 | Oppo（重庆）智能科技有限公司 | 图像传感模组及时间飞行器件、电子设备 |
| US11855106B2 (en) * | 2021-01-22 | 2023-12-26 | Canon Kabushiki Kaisha | Signal processing device having counter counting pulses from avalanche photodiode |
| CN113782510B (zh) * | 2021-11-12 | 2022-04-01 | 深圳市灵明光子科技有限公司 | 一种3d堆叠芯片的键合键布设结构 |
| JP2023183169A (ja) * | 2022-06-15 | 2023-12-27 | ソニーセミコンダクタソリューションズ株式会社 | 光検出素子 |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| US8736039B2 (en) * | 2006-10-06 | 2014-05-27 | Taiwan Semiconductor Manufacturing Co., Ltd. | Stacked structures and methods of forming stacked structures |
| US8860850B1 (en) * | 2007-05-22 | 2014-10-14 | Rockwell Collins, Inc. | Photon-starved imaging system |
| US8446503B1 (en) * | 2007-05-22 | 2013-05-21 | Rockwell Collins, Inc. | Imaging system |
| JP5521721B2 (ja) * | 2009-08-28 | 2014-06-18 | ソニー株式会社 | 撮像素子およびカメラシステム |
| US8227884B2 (en) * | 2009-11-04 | 2012-07-24 | Omnivision Technologies, Inc. | Photodetector array having array of discrete electron repulsive elements |
| US8546188B2 (en) * | 2010-04-09 | 2013-10-01 | International Business Machines Corporation | Bow-balanced 3D chip stacking |
| US8952310B2 (en) * | 2011-02-04 | 2015-02-10 | Aptina Imaging Corporation | Plasmonic light sensors |
| EP2739958B1 (en) * | 2011-08-05 | 2016-01-20 | Pulsetor, LLC | Electron detector including one or more intimately-coupled scintillator-photomultiplier combinations, and electron microscope employing same |
| US9343430B2 (en) * | 2011-09-02 | 2016-05-17 | Maxim Integrated Products, Inc. | Stacked wafer-level package device |
| JP5926921B2 (ja) * | 2011-10-21 | 2016-05-25 | 浜松ホトニクス株式会社 | 光検出装置 |
-
2013
- 2013-10-28 US US14/065,275 patent/US9299732B2/en active Active
-
2014
- 2014-06-09 CN CN201410252328.2A patent/CN104576667B/zh active Active
- 2014-07-21 TW TW103124991A patent/TWI543350B/zh active
-
2015
- 2015-10-19 HK HK15110230.2A patent/HK1209897A1/zh unknown
Also Published As
| Publication number | Publication date |
|---|---|
| CN104576667B (zh) | 2017-08-11 |
| TWI543350B (zh) | 2016-07-21 |
| US9299732B2 (en) | 2016-03-29 |
| US20150115131A1 (en) | 2015-04-30 |
| TW201523847A (zh) | 2015-06-16 |
| CN104576667A (zh) | 2015-04-29 |
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