CN104552629B - 破断装置以及分断方法 - Google Patents

破断装置以及分断方法 Download PDF

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Publication number
CN104552629B
CN104552629B CN201410309300.8A CN201410309300A CN104552629B CN 104552629 B CN104552629 B CN 104552629B CN 201410309300 A CN201410309300 A CN 201410309300A CN 104552629 B CN104552629 B CN 104552629B
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CN
China
Prior art keywords
base plate
composite base
disjunction
brisement
disrumpent feelings
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN201410309300.8A
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English (en)
Chinese (zh)
Other versions
CN104552629A (zh
Inventor
富本博之
黑田直洋
岩坪佑磨
中谷郁祥
武田真和
村上健二
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsuboshi Diamond Industrial Co Ltd
Original Assignee
Mitsuboshi Diamond Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsuboshi Diamond Industrial Co Ltd filed Critical Mitsuboshi Diamond Industrial Co Ltd
Publication of CN104552629A publication Critical patent/CN104552629A/zh
Application granted granted Critical
Publication of CN104552629B publication Critical patent/CN104552629B/zh
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B28—WORKING CEMENT, CLAY, OR STONE
    • B28D—WORKING STONE OR STONE-LIKE MATERIALS
    • B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
    • B28D5/0005—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by breaking, e.g. dicing
    • B28D5/0017—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by breaking, e.g. dicing using moving tools
    • B28D5/0023—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by breaking, e.g. dicing using moving tools rectilinearly
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B28—WORKING CEMENT, CLAY, OR STONE
    • B28D—WORKING STONE OR STONE-LIKE MATERIALS
    • B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
    • B28D5/0058—Accessories specially adapted for use with machines for fine working of gems, jewels, crystals, e.g. of semiconductor material
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B28—WORKING CEMENT, CLAY, OR STONE
    • B28D—WORKING STONE OR STONE-LIKE MATERIALS
    • B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
    • B28D5/0058—Accessories specially adapted for use with machines for fine working of gems, jewels, crystals, e.g. of semiconductor material
    • B28D5/0082—Accessories specially adapted for use with machines for fine working of gems, jewels, crystals, e.g. of semiconductor material for supporting, holding, feeding, conveying or discharging work
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67092—Apparatus for mechanical treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
CN201410309300.8A 2013-10-16 2014-07-01 破断装置以及分断方法 Expired - Fee Related CN104552629B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2013-215394 2013-10-16
JP2013215394A JP6115438B2 (ja) 2013-10-16 2013-10-16 破断装置及び分断方法

Publications (2)

Publication Number Publication Date
CN104552629A CN104552629A (zh) 2015-04-29
CN104552629B true CN104552629B (zh) 2017-11-10

Family

ID=53011030

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201410309300.8A Expired - Fee Related CN104552629B (zh) 2013-10-16 2014-07-01 破断装置以及分断方法

Country Status (4)

Country Link
JP (1) JP6115438B2 (ko)
KR (1) KR102259441B1 (ko)
CN (1) CN104552629B (ko)
TW (1) TWI620636B (ko)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6243699B2 (ja) * 2013-10-25 2017-12-06 三星ダイヤモンド工業株式会社 脆性材料基板の分断装置
JP6407056B2 (ja) * 2015-02-20 2018-10-17 株式会社ディスコ 分割装置と分割方法
JP6561565B2 (ja) * 2015-04-30 2019-08-21 三星ダイヤモンド工業株式会社 貼り合わせ基板の分割方法及び分割装置
JP2017001180A (ja) * 2016-09-29 2017-01-05 三星ダイヤモンド工業株式会社 脆性材料基板の表面層破断装置
EP3410473B1 (de) * 2017-05-30 2021-02-24 Infineon Technologies AG Anordnung und verfahren zum vereinzeln von substraten
TW202041343A (zh) * 2018-12-18 2020-11-16 日商三星鑽石工業股份有限公司 陶瓷片的製造方法及陶瓷片製造用之煅燒前片的製造方法
CN114126814A (zh) * 2019-07-16 2022-03-01 日东电工株式会社 复合材料的分断方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002151443A (ja) * 2000-11-08 2002-05-24 Victor Co Of Japan Ltd 半導体素子の劈開装置
JP4210981B2 (ja) * 2002-09-27 2009-01-21 住友電気工業株式会社 劈開装置及び劈開方法
CN103203806A (zh) * 2012-01-16 2013-07-17 三星钻石工业股份有限公司 脆性材料基板的裂断方法
JP5421699B2 (ja) * 2009-09-07 2014-02-19 三菱電機株式会社 半導体素子分離方法および半導体素子分離装置

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS639950A (ja) * 1986-06-30 1988-01-16 Nec Kansai Ltd 半導体素子の分離方法
JP3787489B2 (ja) * 2000-10-02 2006-06-21 三星ダイヤモンド工業株式会社 脆性基板のブレイク方法及び装置
JP3792508B2 (ja) * 2000-12-19 2006-07-05 三星ダイヤモンド工業株式会社 貼り合わせ脆性基板の分断方法
JP3779237B2 (ja) 2002-07-04 2006-05-24 住友電気工業株式会社 基板切断方法及び基板切断装置
WO2006073098A1 (ja) * 2005-01-05 2006-07-13 Thk Co., Ltd. ワークのブレイク方法及び装置、スクライブ及びブレイク方法、並びにブレイク機能付きスクライブ装置
JP5356931B2 (ja) 2008-11-26 2013-12-04 三星ダイヤモンド工業株式会社 基板割断装置
JP5170195B2 (ja) * 2010-09-24 2013-03-27 三星ダイヤモンド工業株式会社 樹脂付き脆性材料基板の分割方法
JP2013089622A (ja) * 2011-10-13 2013-05-13 Mitsuboshi Diamond Industrial Co Ltd 半導体基板のブレイク方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002151443A (ja) * 2000-11-08 2002-05-24 Victor Co Of Japan Ltd 半導体素子の劈開装置
JP4210981B2 (ja) * 2002-09-27 2009-01-21 住友電気工業株式会社 劈開装置及び劈開方法
JP5421699B2 (ja) * 2009-09-07 2014-02-19 三菱電機株式会社 半導体素子分離方法および半導体素子分離装置
CN103203806A (zh) * 2012-01-16 2013-07-17 三星钻石工业股份有限公司 脆性材料基板的裂断方法

Also Published As

Publication number Publication date
JP2015079824A (ja) 2015-04-23
TWI620636B (zh) 2018-04-11
JP6115438B2 (ja) 2017-04-19
KR20150044367A (ko) 2015-04-24
KR102259441B1 (ko) 2021-06-01
CN104552629A (zh) 2015-04-29
TW201515802A (zh) 2015-05-01

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Granted publication date: 20171110