CN104536192A - 一种液晶面板基板及其制造方法 - Google Patents
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- 239000000758 substrate Substances 0.000 title claims abstract description 64
- 239000004973 liquid crystal related substance Substances 0.000 title claims abstract description 51
- 238000004519 manufacturing process Methods 0.000 title abstract description 12
- 239000011521 glass Substances 0.000 claims abstract description 36
- 238000000926 separation method Methods 0.000 claims description 45
- 238000000034 method Methods 0.000 claims description 43
- 229920002120 photoresistant polymer Polymers 0.000 claims description 32
- 239000000463 material Substances 0.000 claims description 27
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 18
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 8
- 229920005591 polysilicon Polymers 0.000 claims description 8
- 206010010144 Completed suicide Diseases 0.000 claims description 5
- 238000000137 annealing Methods 0.000 claims description 2
- 239000012535 impurity Substances 0.000 description 10
- 239000010409 thin film Substances 0.000 description 10
- 238000005530 etching Methods 0.000 description 9
- 239000010408 film Substances 0.000 description 7
- 230000000694 effects Effects 0.000 description 6
- 238000005224 laser annealing Methods 0.000 description 5
- 238000002425 crystallisation Methods 0.000 description 4
- 230000008025 crystallization Effects 0.000 description 4
- 239000002245 particle Substances 0.000 description 4
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- 238000005286 illumination Methods 0.000 description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 238000010276 construction Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 239000006059 cover glass Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 239000013528 metallic particle Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000001947 vapour-phase growth Methods 0.000 description 1
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- G—PHYSICS
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- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136209—Light shielding layers, e.g. black matrix, incorporated in the active matrix substrate, e.g. structurally associated with the switching element
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- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
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- H01L27/1218—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition or structure of the substrate
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- H01L27/1259—Multistep manufacturing methods
- H01L27/127—Multistep manufacturing methods with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement
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- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66742—Thin film unipolar transistors
- H01L29/6675—Amorphous silicon or polysilicon transistors
- H01L29/66757—Lateral single gate single channel transistors with non-inverted structure, i.e. the channel layer is formed before the gate
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- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78603—Thin film transistors, i.e. transistors with a channel being at least partly a thin film characterised by the insulating substrate or support
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
- H01L29/78633—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device with a light shield
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78651—Silicon transistors
- H01L29/7866—Non-monocrystalline silicon transistors
- H01L29/78672—Polycrystalline or microcrystalline silicon transistor
- H01L29/78678—Polycrystalline or microcrystalline silicon transistor with inverted-type structure, e.g. with bottom gate
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Abstract
本发明公开了一种液晶面板基板及其制造方法,该基板包括:玻璃基片;遮光层,其设置在所述玻璃基片上;主动层,其设置在所述遮光层上。该液晶面板基板的这种结构能够大幅降低非必要性光源的干扰,使得基板的光漏电流的问题得到改善,从而保证了液晶面板基板本身的效能,避免了液晶显示器发生画面闪烁或是相互干扰等问题。
Description
技术领域
本发明涉及液晶显示技术领域,具体地说,涉及一种液晶面板基板以及制造方法。
背景技术
液晶显示器具有高画质、体积小、重量轻、低电压驱动以及低功率消耗等优点,其现已被广泛地应用于各种IT数码产品中,例如汽车导向系统、工程工作站、监视器、便携式信息终端、电子终端、电子书刊、笔记本计算机以及大型直视式平板电视机等。
薄膜晶体管是液晶显示器的重要元件。在使用的过程中,薄膜晶体管会因为外部非必要光线的照射而设的自身内部电流上升,即产生光漏电流现象。而这种现象会使得薄膜晶体管在背光源开启时的电流明显大于背光源关闭时的电流。这不但会影响薄膜晶体管本身的效能,而且还会使得液晶显示器发生画面闪烁或是相互干扰等问题。
基于上述问题,亟需一种用于制造薄膜晶体管的液晶面板的基板,该基板需要具有有效减少所制造出的薄膜晶体管的光漏电流的功能。
发明内容
本发明所要解决的技术问题是为了克服现有的液晶面板中的薄膜晶体管存在光漏电流的问题。为了解决上述问题,本发明的实施例首先提供了一种液晶面板的基板,使用该基板所制造出的薄膜晶体管的光漏电流现象能够得到有效改善。该基板包括:
玻璃基片;
遮光层,其设置在所述玻璃基片上;
主动层,其设置在所述遮光层上。
根据本发明的一个实施例,所述遮光层包括光阻层,所述光阻层的材料包括非晶硅、多晶硅、有色非金属硅化物或上述材料的任一组合。
根据本发明的一个实施例,所述遮光层还包括第一隔离层,所述第一隔离层设置在所述光阻层与主动层之间。
根据本发明的一个实施例,所述第一隔离层、光阻层和主动层具有相同的图案。
根据本发明的一个实施例,所述基板还包括第二隔离层,第二隔离层设置在所述玻璃基片与遮光层之间。
根据本发明的一个实施例,所述第二隔离层、遮光层和主动层是通过一次性连续成膜形成的。
本发明还提供了一种制作液晶面板基板的方法,所述方法包括:
在玻璃基片上形成遮光层;
在所述遮光层上形成主动层;
对所述主动层和遮光层进行刻蚀,得到所需要的液晶面板基板。
根据本发明的一个实施例,在玻璃基片上形成遮光层的步骤包括:
在所述玻璃基片上形成光阻层,所述光阻层的材料包括非晶硅、多晶硅、有色非金属硅化物或上述材料的任一组合;
在所述光阻层上形成第一隔离层。
根据本发明的一个实施例,所述方法在玻璃基片上形成遮光层之前,还在玻璃基板上形成第二隔离层。
根据本发明的一个实施例,在所述遮光层上形成主动层的步骤包括:
在所述遮光层上形成非晶硅层;
对所述非晶硅层进行退火处理,形成所述主动层。
本发明所提供的液晶面板基板在玻璃基片与主动层之间设置有遮光层,该遮光层能够有效遮蔽非必要性光源对主动层的影响。相较于现有技术,该液晶面板基板的这种结构能够大幅降低非必要性光源的干扰,使得基板的光漏电流的问题得到改善,从而保证了液晶面板基板本身的性能,避免了液晶显示器发生画面闪烁或是相互干扰等问题。
本发明所提供的液晶面板制作方法采用同一道光罩制程来实现对遮光层和主动层的刻蚀,从而使得遮光层和主动层具有相同的图案。这种刻蚀方式能够减少刻蚀过程中所使用的光罩数,从而简化了刻蚀流程,降低了基板的生产难度及成本。
由于在实际生产工艺中,玻璃基片中会不可避免地掺杂有杂质(例如水汽等),而这些金属杂质在高温时会向其他层(例如遮光层和主动层等)扩散,从而对其他层产生影响。因此,为了克服该问题,本发明还提供了一种液晶面板基板,该基板在玻璃基片与遮光层之间设置有第二隔离层。第二隔离层能有效阻挡玻璃基片中的杂质向遮光层和主动层进行扩散,从而避免了杂质对遮光层和主动层的干扰,保证了液晶面板基板的良好性能。
本发明所提供的方法在对遮光层和主动层进行刻蚀的过程中,并未刻蚀第二隔离层。这样也就保证了第二隔离层能够有效覆盖玻璃基片,以便最大限度地实现对玻璃基片所含有的离子和水汽等杂质的阻挡作用,从而减小了遮光层和主动层所受到的干扰。
本发明的其它特征和优点将在随后的说明书中阐述,并且,部分地从说明书中变得显而易见,或者通过实施本发明而了解。本发明的目的和其他优点可通过在说明书、权利要求书以及附图中所特别指出的结构来实现和获得。
附图说明
为了更清楚地说明本发明实施例或现有技术中的技术方案,下面将对实施例或现有技术描述中所需要的附图做简单的介绍:
图1是根据本发明第一个实施例的液晶面板基板的结构示意图;
图2是根据本发明一个实施例的制造图1所示的液晶面板基板的流程图;
图3是根据本发明另一个实施例的液晶面板基板的结构示意图。
具体实施方式
以下将结合附图及实施例来详细说明本发明的实施方式,借此对本发明如何应用技术手段来解决技术问题,并达成技术效果的实现过程能充分理解并据以实施。需要说明的是,只要不构成冲突,本发明中的各个实施例以及各实施例中的各个特征可以相互结合,所形成的技术方案均在本发明的保护范围之内。
同时,在以下说明中,出于解释的目的而阐述了许多具体细节,以提供对本发明实施例的彻底理解。然而,对本领域的技术人员来说显而易见的是,本发明可以不用这里的具体细节或者所描述的特定方式来实施。
图1示出了本实施例所提供的液晶面板基板的结构图。
如图1所示,本实施例所提供的液晶面板基板包括玻璃基片101、遮光层102和主动层103。其中,遮光层102设置在玻璃基片101与主动层103之间。由于玻璃基片101具有透光特性,因此当液晶显示器的背光源打开时,背光源所发出的光线将透过玻璃基片101照射到遮光层102上。遮光层102具有较高的光阻效率,其能够有效减少透过自身的光线,这样也就有效减少了照射到主动层103上的光线。因此,利用该基板所形成的薄膜晶体管等元件在受到外界非必要光源(例如液晶面板的光源)的照射时,该基板中的遮光层能够阻止外界非必要光源发出的光线照射到主动层上,从而使得元件的光漏电流现象将得到有效改善。
为了更好地起到遮光效果,如图1所示,本实施例所提供的遮光层102包括有光阻层102a和第一隔离层102b。其中,光阻层102a设置在玻璃基板101上,第一隔离层102b设置在光阻层102a上。光阻层102a受到光照时会产生一些游离粒子,而第一隔离层102b则能够有效吸收这些游离粒子。遮光层的这种结构使得遮光层具有良好的遮光效果的同时,其自身所产生的游离粒子不会扩散到外部,从而避免了这些游离粒子对主动层的干扰。
本实施例中,光阻层102a所采用的材料为非晶硅,第一隔离层102b所采用的材料为氧化硅。需要说明的是,在本发明的其他实施例中,光阻层102a和/或第一隔离层102b也可以采用其他合理的材料,本发明不限于此。
例如,在本发明的一个实施例中,光阻层102所采用的材料可以是非晶硅、多晶硅、有色非金属硅化物或上述材料的任一组合,第一隔离层102b所采用的材料可以氮化硅、氧化硅或是这两种材料的组合。此外,在本发明的其他实施例中,第一隔离层102b也可以采用多层结构,即第一隔离层102b可以由多个具有隔离功能的材料层通过层层叠加而形成,本发明不限于此。
本实施例中,主动层103所采用的材料为多晶硅。当然,在本发明的其他实施例中,主动层103也可以采用其他合理的材料,本发明同样不限于此。
图2示出了制作图1所示的液晶面板基板的流程图。
如图2所示,本实施例所提供的方法首先在步骤S201中在所提供的玻璃基片101上形成遮光层102,随后在步骤S202中在遮光层102上形成主动层103,最后在步骤S203中对主动层103和遮光层102进行刻蚀,从而得到所需要的液晶面板基板。利用该液晶面板基板,可以在后续步骤中形成所需要的薄膜晶体管等元件。
本实施例例中,由于遮光层102包括光阻层102a和第一隔离层102b,因此在步骤S201中形成遮光层102时,首先在玻璃基片101上形成光阻层102a,随后在光阻层102a上形成第一隔离层102b。
在形成主动层103时,本实施例所提供的方法首先在遮光层102上形成非晶硅层,随后对该非晶硅层进行激光退火,以使得该非晶硅层转化为多晶硅层,从而形成所需要的主动层103。
本实施例中,在对非晶硅层进行激光退火时所采用的工艺为薄激光方向性结晶工艺。当然,在本发明的其他实施例中,在对非晶硅层进行激光退火时所采用的工艺也可以为其他合理工艺,例如准分子激光退火工艺或连续侧向固化激光退火工艺等,本发明不限于此。此外,在本发明的其他实施例中,还可以采用其他合理工艺来在遮光层102上形成其他材质的主动层,本发明同样不限于此。
本实施例所提供的方法在步骤S203中采用同一道光照制程来实现对遮光层102和主动层103的刻蚀,从而使得遮光层102和主动层103具有相同的图案。这种刻蚀方式不仅能够减少刻蚀过程中所使用的光罩数,还能够简化刻蚀流程,降低基板的生产难度及成本。
当然,在本发明的其他实施例中,根据实际需要,也可以采用不同的光罩来对遮光层102和主动层103进行刻蚀,以在遮光层102和主动层103上形成所需要的图案,本发明不限于此。
从上述描述中可以看出,本实施例所提供的液晶面板基板在玻璃基片与主动层之间设置遮光层,该遮光层能有有效遮蔽非必要性光源对主动层的影响。相较于现有技术,该液晶面板基板的这种结构能够大幅降低非必要性光源的干扰,使得基板的光漏电流的问题得到改善,从而保证了液晶面板基板本身的性能,避免了液晶显示器发生画面闪烁或是相互干扰等问题。
由于在实际生产工艺中,玻璃基片101中会不可避免地掺杂有杂质(例如金属颗粒等),而这些金属杂质在高温时会向其他层(例如遮光层102和主动层103等)扩散,从而对其他层产生影响。因此,为了克服该问题,如图3所示,在本发明的一个实施例中,还可以在上述液晶面板基板的玻璃基片101与遮光层102之间设置第二隔离层104。第二隔离层104能有效阻挡玻璃基片101中的杂质向遮光层102和主动层103进行扩散,从而避免了杂质对遮光层102和主动层103的干扰,保证了液晶面板基板的良好性能。
第二隔离层104所采用的材料为氧化硅和氮化硅的混合物。当然,在本发明的其他实施例中,第二隔离层104可以采用其他材料,例如仅采用氮化硅或仅采用氧化硅等,本发明不限于此。
相应地,制造该含有第二隔离层104的液晶面板基板的方法与图2所示的方法类似,但是在形成遮光层102前,需要先在玻璃基片101上形成第二隔离层104,随后再在第二隔离层104上形成遮光层102。
需要指出的是,在对遮光层102和主动层103进行刻蚀的过程中,如图3所示,第二隔离层104并未被刻蚀。这种结构部仅能够减少刻蚀时间,从而提高生产速度,还减少阶梯深度,从而使得下一层膜层的阶梯覆盖性更好,可以有效保证良品率。此外,第二隔离层104未被刻蚀还能够保证第二隔离层104能够最大限度地对玻璃基片101所含有的离子和水汽等杂质的阻挡作用,从而避免了遮光层102和主动层104受到的影响,提高元件可靠度。
本实施例中,液晶面板基板中的主动层、遮光层(包括光阻层和第一隔离层)和第二隔离层是通过等离子增加化学气象沉积的方式一次性连续成膜形成的。其中,本实施例所提供的液晶面板基板中的主动层、光阻层和第一隔离层形成了a-si/SiOx/a-Si这种特有的结构,而这种结构则有利于连续成膜。第一隔离层(其材质为SiOx)能够使得上层a-si结晶时不会受到下层a-Si的影响,从而使得上层a-si的结晶效果更好。而结晶后的上层a-si则变成多晶硅层(即主动层),下层a-Si形成光阻层,从而为PECVD的连续成膜提供了便利。
从上述描述中还可以看出,本实施例所提供的液晶面板基板的光阻层采用的是非金属材料。这是因为如果光阻层采用金属材料,那么即使光阻层上覆盖上绝缘层,光阻层所产生的金属粒子也会由界面处扩散到主动层,从而使得主动层收到金属污染。为了避免这一问题,现有的液晶面板基板是将金属材料构成的光阻层设置在整面性地第二隔离层与玻璃基片之间。而这种结构将需要两次光照来完成,这显然会增加液晶面板基板的生产难度和成本。
应该理解的是,本发明所公开的实施例不限于这里所公开的特定结构、处理步骤或材料,而应当延伸到相关领域的普通技术人员所理解的这些特征的等同替代。还应当理解的是,在此使用的术语仅用于描述特定实施例的目的,而并不意味着限制。
说明书中提到的“一个实施例”或“实施例”意指结合实施例描述的特定特征、结构或特性包括在本发明的至少一个实施例中。因此,说明书通篇各个地方出现的短语“一个实施例”或“实施例”并不一定均指同一个实施例。
此外,所描述的特征、结构或特性可以任何其他合适的方式结合到一个或多个实施例中。在上面的描述中,提供一些具体的细节,例如材料等,以提供对本发明的实施例的全面理解。然而,相关领域的技术人员将明白,本发明无需上述一个或多个具体的细节便可实现,或者也可采用其它方法、组件、材料等实现。在其它示例中,周知的结构、材料或操作并未详细示出或描述以免模糊本发明的各个方面。
虽然上述示例用于说明本发明在一个或多个应用中的原理,但对于本领域的技术人员来说,在不背离本发明的原理和思想的情况下,明显可以在形式上、用法及实施的细节上作各种修改而不用付出创造性劳动。因此,本发明由所附的权利要求书来限定。
Claims (10)
1.一种液晶面板基板,其特征在于,所述基板包括:
玻璃基片;
遮光层,其设置在所述玻璃基片上;
主动层,其设置在所述遮光层上。
2.如权利要求1所述的基板,其特征在于,所述遮光层包括光阻层,所述光阻层的材料包括非晶硅、多晶硅、有色非金属硅化物或上述材料的任一组合。
3.如权利要求2所述的基板,其特征在于,所述遮光层还包括第一隔离层,所述第一隔离层设置在所述光阻层与主动层之间。
4.如权利要求3所述的基板,其特征在于,所述第一隔离层、光阻层和主动层具有相同的图案。
5.如权利要求1~4中任一项所述的基板,其特征在于,所述基板还包括第二隔离层,第二隔离层设置在所述玻璃基片与遮光层之间。
6.如权利要求5所述的基板,其特征在于,所述第二隔离层、遮光层和主动层是通过一次性连续成膜形成的。
7.一种制作液晶面板基板的方法,其特征在于,所述方法包括:
在玻璃基片上形成遮光层;
在所述遮光层上形成主动层;
对所述主动层和遮光层进行刻蚀,得到所需要的液晶面板基板。
8.如权利要求7所述的方法,其特征在于,形成遮光层的步骤包括:
在所述玻璃基片上形成光阻层,所述光阻层的材料包括非晶硅、多晶硅、有色非金属硅化物或上述材料的任一组合;
在所述光阻层上形成第一隔离层。
9.如权利要求7所述的方法,其特征在于,所述方法在玻璃基片上形成遮光层之前,还在玻璃基板上形成第二隔离层。
10.如权利要求7~9中任一项所述的方法,其特征在于,在所述遮光层上形成主动层的步骤包括:
在所述遮光层上形成非晶硅层;
对所述非晶硅层进行退火处理,形成所述主动层。
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- 2015-01-16 US US14/418,606 patent/US20160246139A1/en not_active Abandoned
- 2015-01-16 WO PCT/CN2015/070838 patent/WO2016106864A1/zh active Application Filing
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CN105185714A (zh) * | 2015-09-22 | 2015-12-23 | 京东方科技集团股份有限公司 | 薄膜晶体管及其制作方法、显示基板和显示装置 |
CN105185714B (zh) * | 2015-09-22 | 2018-09-11 | 京东方科技集团股份有限公司 | 薄膜晶体管及其制作方法、显示基板和显示装置 |
US10177257B2 (en) | 2015-09-22 | 2019-01-08 | Boe Technology Group Co., Ltd. | Thin film transistor, method for fabricating the same, display substrate and display device |
WO2019041976A1 (en) * | 2017-08-31 | 2019-03-07 | Boe Technology Group Co., Ltd. | METHOD FOR MANUFACTURING NETWORK SUBSTRATE, NETWORK SUBSTRATE, AND DISPLAY APPARATUS |
US11245037B2 (en) | 2017-08-31 | 2022-02-08 | Boe Technology Group Co., Ltd. | Method of fabricating array substrate, array substrate, and display apparatus |
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US20160246139A1 (en) | 2016-08-25 |
WO2016106864A1 (zh) | 2016-07-07 |
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