CN104487618B - 用于生产氧化陶瓷单晶的坩埚 - Google Patents

用于生产氧化陶瓷单晶的坩埚 Download PDF

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Publication number
CN104487618B
CN104487618B CN201380020669.0A CN201380020669A CN104487618B CN 104487618 B CN104487618 B CN 104487618B CN 201380020669 A CN201380020669 A CN 201380020669A CN 104487618 B CN104487618 B CN 104487618B
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CN
China
Prior art keywords
crucible
coating
molybdenum
refractory metal
tungsten
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
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CN201380020669.0A
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English (en)
Chinese (zh)
Other versions
CN104487618A (zh
Inventor
朱迪斯·亚努斯楚斯基
海克·拉切尔
曼弗莱德·苏利克
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Plansee SE
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Plansee SE
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Publication of CN104487618A publication Critical patent/CN104487618A/zh
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Publication of CN104487618B publication Critical patent/CN104487618B/zh
Expired - Fee Related legal-status Critical Current
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Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/002—Crucibles or containers for supporting the melt
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D7/00—Processes, other than flocking, specially adapted for applying liquids or other fluent materials to particular surfaces or for applying particular liquids or other fluent materials
    • B05D7/22—Processes, other than flocking, specially adapted for applying liquids or other fluent materials to particular surfaces or for applying particular liquids or other fluent materials to internal surfaces, e.g. of tubes
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/16—Oxides
    • C30B29/20—Aluminium oxides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B35/00—Apparatus not otherwise provided for, specially adapted for the growth, production or after-treatment of single crystals or of a homogeneous polycrystalline material with defined structure
    • C30B35/002—Crucibles or containers
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1092—Shape defined by a solid member other than seed or product [e.g., Bridgman-Stockbarger]

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Wood Science & Technology (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
CN201380020669.0A 2012-04-17 2013-04-16 用于生产氧化陶瓷单晶的坩埚 Expired - Fee Related CN104487618B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201261625296P 2012-04-17 2012-04-17
US61/625,296 2012-04-17
PCT/AT2013/000074 WO2013155540A1 (de) 2012-04-17 2013-04-16 Tiegel zur herstellung von oxidkeramischen einkristallen

Publications (2)

Publication Number Publication Date
CN104487618A CN104487618A (zh) 2015-04-01
CN104487618B true CN104487618B (zh) 2017-08-25

Family

ID=48576157

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201380020669.0A Expired - Fee Related CN104487618B (zh) 2012-04-17 2013-04-16 用于生产氧化陶瓷单晶的坩埚

Country Status (4)

Country Link
US (1) US20150128849A1 (enExample)
JP (1) JP6357146B2 (enExample)
CN (1) CN104487618B (enExample)
WO (1) WO2013155540A1 (enExample)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2015099010A1 (ja) * 2013-12-26 2015-07-02 株式会社アライドマテリアル サファイア単結晶育成用坩堝、サファイア単結晶育成方法およびサファイア単結晶育成用坩堝の製造方法
US9992917B2 (en) 2014-03-10 2018-06-05 Vulcan GMS 3-D printing method for producing tungsten-based shielding parts
AT14854U1 (de) 2015-07-03 2016-07-15 Plansee Se Behälter aus Refraktärmetall
WO2020179793A1 (ja) * 2019-03-05 2020-09-10 学校法人関西学院 ＳｉＣ基板の製造方法及びその製造装置及びＳｉＣ基板のマクロステップバンチングを低減する方法
CN111778557A (zh) * 2020-06-19 2020-10-16 山东新升光电科技有限责任公司 一种制备蓝宝石单晶用坩埚

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01139988A (ja) * 1987-11-26 1989-06-01 Toshiba Corp 金属溶解用るつぼ
JPH0625855A (ja) * 1992-07-13 1994-02-01 Tokyo Tungsten Co Ltd ルツボ及びその製造方法

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1363209A (fr) * 1963-04-02 1964-06-12 Thomson Houston Comp Francaise Revêtement vitreux pour métaux et céramiques
DE1496660B1 (de) * 1964-03-06 1970-02-12 Sigri Elektrographit Gmbh Hochwarmfester Formkoerper mit zunderfestem UEberzug und Verfahren zu seiner Herstellung
US3377520A (en) * 1965-07-02 1968-04-09 Gen Electric Low drift, high temperature solion cells
US3407057A (en) * 1965-10-23 1968-10-22 American Metal Climax Inc Molybdenum powder for use in spray coating
US3620137A (en) * 1969-10-06 1971-11-16 Ramsey Corp Piston sleeve
US3938814A (en) * 1974-09-23 1976-02-17 Koppers Company, Inc. Bearing member having a wear resistant coating on its bearing face
US4212669A (en) * 1978-08-03 1980-07-15 Howmet Turbine Components Corporation Method for the production of precision shapes
US4806385A (en) * 1987-03-24 1989-02-21 Amax Inc. Method of producing oxidation resistant coatings for molybdenum
US6604941B2 (en) * 1996-03-29 2003-08-12 Garth W. Billings Refractory crucibles and molds for containing reactive molten metals and salts
US20110253033A1 (en) * 2008-10-24 2011-10-20 Advanced Renewableenergy Co. Llc Crystal growing system and method thereof
DE102008060520A1 (de) * 2008-12-04 2010-06-10 Schott Ag Ein Tiegel zur Prozessierung hochschmelzender Materialien
AT12783U1 (de) * 2011-08-05 2012-11-15 Plansee Se Tiegel zur kristallzucht
KR20140085448A (ko) * 2011-09-09 2014-07-07 이노벤트 테크놀로지스 코팅된 도가니 및 코팅된 도가니를 제조하는 방법

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01139988A (ja) * 1987-11-26 1989-06-01 Toshiba Corp 金属溶解用るつぼ
JPH0625855A (ja) * 1992-07-13 1994-02-01 Tokyo Tungsten Co Ltd ルツボ及びその製造方法

Also Published As

Publication number Publication date
US20150128849A1 (en) 2015-05-14
JP2015514667A (ja) 2015-05-21
CN104487618A (zh) 2015-04-01
JP6357146B2 (ja) 2018-07-11
WO2013155540A1 (de) 2013-10-24

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