CN104428866A - 带电粒子光刻系统和射束产生器 - Google Patents

带电粒子光刻系统和射束产生器 Download PDF

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Publication number
CN104428866A
CN104428866A CN201380036057.0A CN201380036057A CN104428866A CN 104428866 A CN104428866 A CN 104428866A CN 201380036057 A CN201380036057 A CN 201380036057A CN 104428866 A CN104428866 A CN 104428866A
Authority
CN
China
Prior art keywords
charged particle
cavity
generator
arrangement
vacuum chamber
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN201380036057.0A
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English (en)
Chinese (zh)
Inventor
A.H.V.范维恩
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mapper Lithopraphy IP BV
Original Assignee
Mapper Lithopraphy IP BV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mapper Lithopraphy IP BV filed Critical Mapper Lithopraphy IP BV
Publication of CN104428866A publication Critical patent/CN104428866A/zh
Pending legal-status Critical Current

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Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/09—Diaphragms; Shields associated with electron or ion-optical arrangements; Compensation of disturbing fields
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/147—Arrangements for directing or deflecting the discharge along a desired path
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/3002—Details
    • H01J37/3007—Electron or ion-optical systems
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/302—Controlling tubes by external information, e.g. program control
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
    • H01J37/3177—Multi-beam, e.g. fly's eye, comb probe
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/002—Cooling arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/02—Details
    • H01J2237/026—Shields
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/02—Details
    • H01J2237/026—Shields
    • H01J2237/0262—Shields electrostatic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/02—Details
    • H01J2237/026—Shields
    • H01J2237/0264—Shields magnetic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/16—Vessels
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/18—Vacuum control means
    • H01J2237/182—Obtaining or maintaining desired pressure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/18—Vacuum control means
    • H01J2237/188—Differential pressure

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Analytical Chemistry (AREA)
  • Nanotechnology (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Theoretical Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Electron Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Electron Sources, Ion Sources (AREA)
CN201380036057.0A 2012-05-14 2013-05-14 带电粒子光刻系统和射束产生器 Pending CN104428866A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201261646839P 2012-05-14 2012-05-14
US61/646,839 2012-05-14
PCT/EP2013/059945 WO2013171214A1 (en) 2012-05-14 2013-05-14 Charged particle lithography system and beam generator

Publications (1)

Publication Number Publication Date
CN104428866A true CN104428866A (zh) 2015-03-18

Family

ID=48463976

Family Applications (3)

Application Number Title Priority Date Filing Date
CN201380036057.0A Pending CN104428866A (zh) 2012-05-14 2013-05-14 带电粒子光刻系统和射束产生器
CN201380036065.5A Active CN104520968B (zh) 2012-05-14 2013-05-14 带电粒子光刻系统和射束产生器
CN201710450157.8A Active CN107359101B (zh) 2012-05-14 2013-05-14 带电粒子射束产生器中的高电压屏蔽和冷却

Family Applications After (2)

Application Number Title Priority Date Filing Date
CN201380036065.5A Active CN104520968B (zh) 2012-05-14 2013-05-14 带电粒子光刻系统和射束产生器
CN201710450157.8A Active CN107359101B (zh) 2012-05-14 2013-05-14 带电粒子射束产生器中的高电压屏蔽和冷却

Country Status (8)

Country Link
US (2) US9653261B2 (https=)
EP (1) EP2852966A1 (https=)
JP (3) JP6219374B2 (https=)
KR (2) KR101961914B1 (https=)
CN (3) CN104428866A (https=)
NL (4) NL2010802C2 (https=)
TW (2) TW201401330A (https=)
WO (2) WO2013171214A1 (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI734097B (zh) * 2017-02-23 2021-07-21 荷蘭商Ａｓｍｌ荷蘭公司 底部密封負載鎖裝置、用於將帶電粒子束檢測工具中之組件屏蔽於污染粒子的檢測系統及方法

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI661457B (zh) * 2013-12-30 2019-06-01 荷蘭商Ａｓｍｌ荷蘭公司 陰極配置、電子槍以及包含此電子槍的微影系統
US10290528B2 (en) * 2014-06-13 2019-05-14 Intel Corporation Ebeam align on the fly
JP2017135218A (ja) * 2016-01-26 2017-08-03 株式会社アドバンテスト 荷電粒子ビームレンズ装置、荷電粒子ビームカラム、および荷電粒子ビーム露光装置
JP2017139339A (ja) * 2016-02-04 2017-08-10 株式会社アドバンテスト 露光装置
US9981293B2 (en) * 2016-04-21 2018-05-29 Mapper Lithography Ip B.V. Method and system for the removal and/or avoidance of contamination in charged particle beam systems
US10453645B2 (en) * 2016-12-01 2019-10-22 Applied Materials Israel Ltd. Method for inspecting a specimen and charged particle multi-beam device
CA3229046A1 (en) * 2017-01-18 2018-08-09 Shine Technologies, Llc High power ion beam generator systems and methods
NL2021217B1 (en) * 2018-06-29 2020-01-07 Asml Netherlands Bv Substrate exposure system and a frame therefore
DE102019005362A1 (de) * 2019-07-31 2021-02-04 Carl Zeiss Multisem Gmbh Verfahren zum Betreiben eines Vielzahl-Teilchenstrahlsystems unter Veränderung der numerischen Apertur, zugehöriges Computerprogrammprodukt und Vielzahl-Teilchenstrahlsystem
JP2021039880A (ja) * 2019-09-03 2021-03-11 株式会社日立ハイテク 荷電粒子線装置
EP4211711A1 (en) * 2020-09-07 2023-07-19 ASML Netherlands B.V. Electron-optical assembly comprising electromagnetic shielding
CN118974871A (zh) * 2022-04-12 2024-11-15 华为技术有限公司 一种可调整的多电极准直装置
EP4307338B1 (en) * 2022-07-12 2024-11-27 Comet AG Radio frequency generator

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20020096640A1 (en) * 2001-01-19 2002-07-25 Nikon Corporation Magnetic shielding for charged-particle-beam optical systems
TW579541B (en) * 2000-04-27 2004-03-11 Canon Kk Charged-particle beam exposure apparatus and device manufacturing method
JP2006140267A (ja) * 2004-11-11 2006-06-01 Hitachi High-Technologies Corp 荷電粒子線露光装置
WO2011043657A2 (en) * 2009-10-09 2011-04-14 Mapper Lithography Ip B.V. High voltage shielding arrangement
US20120085925A1 (en) * 2009-06-16 2012-04-12 Hitachi High-Technologies Corporation Charged particle radiation device
CN102422380A (zh) * 2009-02-22 2012-04-18 迈普尔平版印刷Ip有限公司 带电粒子微影设备及真空腔室中产生真空的方法

Family Cites Families (67)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3157308A (en) 1961-09-05 1964-11-17 Clark Mfg Co J L Canister type container and method of making the same
US3159408A (en) 1961-10-05 1964-12-01 Grace W R & Co Chuck
US3924136A (en) * 1975-02-18 1975-12-02 Stanford Research Inst Charged particle apodized pattern imaging and exposure system
US4142133A (en) 1976-10-20 1979-02-27 Balandin Genrikh D Cathode-ray tube with variable energy of beam electrons
DE3231036A1 (de) * 1982-08-20 1984-02-23 Max Planck Gesellschaft Kombinierte elektrostatische objektiv- und emissionslinse
US4524308A (en) 1984-06-01 1985-06-18 Sony Corporation Circuits for accomplishing electron beam convergence in color cathode ray tubes
WO1994025880A1 (en) 1993-04-30 1994-11-10 Board Of Regents, The University Of Texas System Megavoltage scanning imager and method for its use
JP3253429B2 (ja) 1993-09-17 2002-02-04 富士通株式会社 電子ビーム装置
EP0766405A1 (en) 1995-09-29 1997-04-02 STMicroelectronics S.r.l. Successive approximation register without redundancy
JP3763446B2 (ja) * 1999-10-18 2006-04-05 キヤノン株式会社 静電レンズ、電子ビーム描画装置、荷電ビーム応用装置、および、デバイス製造方法
WO2001043157A1 (en) * 1999-12-13 2001-06-14 Semequip, Inc. Ion implantation ion source, system and method
KR100465117B1 (ko) * 2000-04-04 2005-01-05 주식회사 아도반테스토 다축전자렌즈를 이용한 멀티빔 노광장치, 복수의 전자빔을집속하는 다축전자렌즈, 반도체소자 제조방법
GB0029040D0 (en) * 2000-11-29 2001-01-10 Micromass Ltd Orthogonal time of flight mass spectrometer
JP4156809B2 (ja) * 2001-01-31 2008-09-24 株式会社アドバンテスト 電子ビーム露光装置及び電子レンズ
US6797953B2 (en) 2001-02-23 2004-09-28 Fei Company Electron beam system using multiple electron beams
US6768125B2 (en) 2002-01-17 2004-07-27 Ims Nanofabrication, Gmbh Maskless particle-beam system for exposing a pattern on a substrate
EP1532649A2 (en) * 2002-06-15 2005-05-25 NFAB Limited A particle beam generator
JP2004063547A (ja) * 2002-07-25 2004-02-26 Nikon Corp 真空雰囲気下露光装置
EP1388883B1 (en) * 2002-08-07 2013-06-05 Fei Company Coaxial FIB-SEM column
ATE538412T1 (de) 2002-10-25 2012-01-15 Mapper Lithography Ip Bv Lithographisches system
AU2003276779A1 (en) 2002-10-30 2004-05-25 Mapper Lithography Ip B.V. Electron beam exposure system
JP2004214480A (ja) 2003-01-07 2004-07-29 Nikon Corp 露光装置
KR101068607B1 (ko) 2003-03-10 2011-09-30 마퍼 리쏘그라피 아이피 비.브이. 복수 개의 빔렛 발생 장치
JP4113032B2 (ja) * 2003-04-21 2008-07-02 キヤノン株式会社 電子銃及び電子ビーム露光装置
ATE524822T1 (de) 2003-05-28 2011-09-15 Mapper Lithography Ip Bv Belichtungsverfahren für strahlen aus geladenen teilchen
EP1491955A1 (en) * 2003-06-27 2004-12-29 ASML Netherlands B.V. Lithographic projection apparatus and device manufacturing method
EP1498930A1 (en) * 2003-07-14 2005-01-19 ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH Charged particle beam device with multi-source array
ATE381728T1 (de) 2003-07-30 2008-01-15 Mapper Lithography Ip Bv Modulator-schaltkreise
GB2406704B (en) * 2003-09-30 2007-02-07 Ims Nanofabrication Gmbh Particle-optic electrostatic lens
JP2005127800A (ja) 2003-10-22 2005-05-19 Toshiba Corp 電子線照射装置と照射方法および電子線描画装置
JP4406311B2 (ja) 2004-03-31 2010-01-27 株式会社荏原製作所 エネルギー線照射装置およびそれを用いたパタン作成方法
JP4547997B2 (ja) 2004-06-04 2010-09-22 株式会社ニコン 真空容器、露光装置、及び検査装置
WO2006043656A1 (ja) * 2004-10-21 2006-04-27 Hoya Corporation 微粒子堆積装置及び微粒子堆積方法
JP2006139958A (ja) * 2004-11-10 2006-06-01 Toshiba Corp 荷電ビーム装置
GB2435348B (en) 2004-11-17 2009-06-24 Ims Nanofabrication Ag Pattern lock system for particle-beam exposure apparatus
GB0425290D0 (en) * 2004-11-17 2004-12-15 Eastham Derek A Focussing masks
US7709815B2 (en) 2005-09-16 2010-05-04 Mapper Lithography Ip B.V. Lithography system and projection method
JP4732917B2 (ja) * 2006-02-15 2011-07-27 株式会社日立ハイテクノロジーズ 走査型電子顕微鏡及び欠陥検出装置
US7521687B2 (en) 2006-03-30 2009-04-21 Tokyo Electron Limited Static electricity deflecting device, electron beam irradiating apparatus, substrate processing apparatus, substrate processing method and method of manufacturing substrate
JP4533344B2 (ja) 2006-05-19 2010-09-01 キヤノン株式会社 真空装置、露光装置、及びデバイス製造方法
EP1983548A1 (en) 2007-04-20 2008-10-22 ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH Emitter chamber, charged particle apparatus and method for operating same
JP5497980B2 (ja) * 2007-06-29 2014-05-21 株式会社日立ハイテクノロジーズ 荷電粒子線応用装置、及び試料検査方法
WO2009026970A1 (en) * 2007-08-24 2009-03-05 Carl Zeiss Smt Ag Controllable optical element and method for operating an optical element with thermal actuators and projection exposure apparatus for semiconductor lithography
KR101570974B1 (ko) 2008-02-26 2015-11-23 마퍼 리쏘그라피 아이피 비.브이. 투사 렌즈 배열체
US8445869B2 (en) 2008-04-15 2013-05-21 Mapper Lithography Ip B.V. Projection lens arrangement
JP5408674B2 (ja) 2008-02-26 2014-02-05 マッパー・リソグラフィー・アイピー・ビー．ブイ． 投影レンズ構成体
WO2009141428A1 (en) 2008-05-23 2009-11-26 Mapper Lithography Ip B.V. Imaging system
WO2009147202A1 (en) 2008-06-04 2009-12-10 Mapper Lithography Ip B.V. Writing strategy
JP5250350B2 (ja) * 2008-09-12 2013-07-31 株式会社日立ハイテクノロジーズ 荷電粒子線応用装置
TWI479530B (zh) 2008-10-01 2015-04-01 Mapper Lithography Ip Bv 靜電透鏡結構、靜電透鏡陣列、帶電粒子的子束微影系統以及製造絕緣結構的方法
US10054754B2 (en) * 2009-02-04 2018-08-21 Nikon Corporation Thermal regulation of vibration-sensitive objects with conduit circuit having liquid metal, pump, and heat exchanger
DE102009009221A1 (de) * 2009-02-17 2010-08-26 Carl Zeiss Smt Ag Projektionsbelichtungsanlage für die Halbleiterlithographie mit einem Aktuatorsystem
US20110049393A1 (en) 2009-02-22 2011-03-03 Mapper Lithography Ip B.V. Lithography Machine and Substrate Handling Arrangement
KR101553802B1 (ko) 2009-02-22 2015-09-17 마퍼 리쏘그라피 아이피 비.브이. 진공 챔버에서 진공을 실현하기 위한 장치 및 방법
JP2010282799A (ja) 2009-06-03 2010-12-16 Canon Inc 荷電粒子線描画装置およびデバイス製造方法
GB201003566D0 (en) * 2010-03-03 2010-04-21 Ilika Technologies Ltd Mass spectrometry apparatus and methods
WO2011154731A1 (en) * 2010-06-08 2011-12-15 Micromass Uk Limited Mass spectrometer with beam expander
US8586949B2 (en) 2010-11-13 2013-11-19 Mapper Lithography Ip B.V. Charged particle lithography system with intermediate chamber
WO2012062934A1 (en) 2010-11-13 2012-05-18 Mapper Lithography Ip B.V. Charged particle beam modulator
WO2012062854A1 (en) * 2010-11-13 2012-05-18 Mapper Lithography Ip B.V. Lithography system and method of refracting
JP5709535B2 (ja) * 2011-01-07 2015-04-30 キヤノン株式会社 電子ビーム描画装置、およびそれを用いた物品の製造方法
JP5822535B2 (ja) * 2011-05-16 2015-11-24 キヤノン株式会社 描画装置、および、物品の製造方法
JP2013008534A (ja) * 2011-06-23 2013-01-10 Canon Inc 荷電粒子線レンズ用電極
JP2013171925A (ja) * 2012-02-20 2013-09-02 Canon Inc 荷電粒子線装置、それを用いた物品の製造方法
KR101945964B1 (ko) 2012-05-14 2019-02-11 마퍼 리쏘그라피 아이피 비.브이. 하전 입자 다중-빔렛 리소그래피 시스템 및 냉각 장치 제조 방법
JP2014116518A (ja) * 2012-12-11 2014-06-26 Canon Inc 描画装置及び物品の製造方法
WO2016158421A1 (ja) 2015-04-03 2016-10-06 株式会社日立ハイテクノロジーズ 光量検出装置、それを用いた免疫分析装置および荷電粒子線装置

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW579541B (en) * 2000-04-27 2004-03-11 Canon Kk Charged-particle beam exposure apparatus and device manufacturing method
US20020096640A1 (en) * 2001-01-19 2002-07-25 Nikon Corporation Magnetic shielding for charged-particle-beam optical systems
JP2006140267A (ja) * 2004-11-11 2006-06-01 Hitachi High-Technologies Corp 荷電粒子線露光装置
CN102422380A (zh) * 2009-02-22 2012-04-18 迈普尔平版印刷Ip有限公司 带电粒子微影设备及真空腔室中产生真空的方法
US20120085925A1 (en) * 2009-06-16 2012-04-12 Hitachi High-Technologies Corporation Charged particle radiation device
WO2011043657A2 (en) * 2009-10-09 2011-04-14 Mapper Lithography Ip B.V. High voltage shielding arrangement

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI734097B (zh) * 2017-02-23 2021-07-21 荷蘭商Ａｓｍｌ荷蘭公司 底部密封負載鎖裝置、用於將帶電粒子束檢測工具中之組件屏蔽於污染粒子的檢測系統及方法
TWI774426B (zh) * 2017-02-23 2022-08-11 荷蘭商Ａｓｍｌ荷蘭公司 密封負載鎖裝置及用於將帶電粒子束檢測工具中之組件屏蔽於污染粒子的方法

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