TW201401330A - 帶電粒子微影系統和射束產生器 - Google Patents

帶電粒子微影系統和射束產生器 Download PDF

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Publication number
TW201401330A
TW201401330A TW102117161A TW102117161A TW201401330A TW 201401330 A TW201401330 A TW 201401330A TW 102117161 A TW102117161 A TW 102117161A TW 102117161 A TW102117161 A TW 102117161A TW 201401330 A TW201401330 A TW 201401330A
Authority
TW
Taiwan
Prior art keywords
charged particle
generator
cavity
high voltage
chamber
Prior art date
Application number
TW102117161A
Other languages
English (en)
Chinese (zh)
Inventor
Veen Alexander Hendrik Vincent Van
Original Assignee
Mapper Lithography Ip Bv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mapper Lithography Ip Bv filed Critical Mapper Lithography Ip Bv
Publication of TW201401330A publication Critical patent/TW201401330A/zh

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/09—Diaphragms; Shields associated with electron or ion-optical arrangements; Compensation of disturbing fields
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/3002—Details
    • H01J37/3007—Electron or ion-optical systems
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/147—Arrangements for directing or deflecting the discharge along a desired path
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/302—Controlling tubes by external information, e.g. program control
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
    • H01J37/3177—Multi-beam, e.g. fly's eye, comb probe
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/002—Cooling arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/02—Details
    • H01J2237/026—Shields
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/02—Details
    • H01J2237/026—Shields
    • H01J2237/0262—Shields electrostatic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/02—Details
    • H01J2237/026—Shields
    • H01J2237/0264—Shields magnetic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/16—Vessels
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/18—Vacuum control means
    • H01J2237/182—Obtaining or maintaining desired pressure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/18—Vacuum control means
    • H01J2237/188—Differential pressure

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Analytical Chemistry (AREA)
  • Nanotechnology (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Theoretical Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Electron Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Electron Sources, Ion Sources (AREA)
TW102117161A 2012-05-14 2013-05-14 帶電粒子微影系統和射束產生器 TW201401330A (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US201261646839P 2012-05-14 2012-05-14

Publications (1)

Publication Number Publication Date
TW201401330A true TW201401330A (zh) 2014-01-01

Family

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Family Applications (2)

Application Number Title Priority Date Filing Date
TW102117161A TW201401330A (zh) 2012-05-14 2013-05-14 帶電粒子微影系統和射束產生器
TW102117163A TWI604493B (zh) 2012-05-14 2013-05-14 帶電粒子微影系統和射束產生器

Family Applications After (1)

Application Number Title Priority Date Filing Date
TW102117163A TWI604493B (zh) 2012-05-14 2013-05-14 帶電粒子微影系統和射束產生器

Country Status (8)

Country Link
US (2) US9653261B2 (https=)
EP (1) EP2852966A1 (https=)
JP (3) JP6219374B2 (https=)
KR (2) KR101961914B1 (https=)
CN (3) CN104428866A (https=)
NL (4) NL2010802C2 (https=)
TW (2) TW201401330A (https=)
WO (2) WO2013171214A1 (https=)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI603375B (zh) * 2014-06-13 2017-10-21 英特爾股份有限公司 電子束裝置和使用電子束裝置的即時對準方法
TWI709992B (zh) * 2016-12-01 2020-11-11 以色列商應用材料以色列公司 用於檢查試樣之方法以及帶電粒子多束裝置

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI661457B (zh) * 2013-12-30 2019-06-01 荷蘭商Ａｓｍｌ荷蘭公司 陰極配置、電子槍以及包含此電子槍的微影系統
JP2017135218A (ja) * 2016-01-26 2017-08-03 株式会社アドバンテスト 荷電粒子ビームレンズ装置、荷電粒子ビームカラム、および荷電粒子ビーム露光装置
JP2017139339A (ja) * 2016-02-04 2017-08-10 株式会社アドバンテスト 露光装置
US9981293B2 (en) * 2016-04-21 2018-05-29 Mapper Lithography Ip B.V. Method and system for the removal and/or avoidance of contamination in charged particle beam systems
CA3229046A1 (en) * 2017-01-18 2018-08-09 Shine Technologies, Llc High power ion beam generator systems and methods
US10176967B2 (en) * 2017-02-23 2019-01-08 Hermes Microvision, Inc. Load lock system for charged particle beam imaging
NL2021217B1 (en) * 2018-06-29 2020-01-07 Asml Netherlands Bv Substrate exposure system and a frame therefore
DE102019005362A1 (de) * 2019-07-31 2021-02-04 Carl Zeiss Multisem Gmbh Verfahren zum Betreiben eines Vielzahl-Teilchenstrahlsystems unter Veränderung der numerischen Apertur, zugehöriges Computerprogrammprodukt und Vielzahl-Teilchenstrahlsystem
JP2021039880A (ja) * 2019-09-03 2021-03-11 株式会社日立ハイテク 荷電粒子線装置
EP4211711A1 (en) * 2020-09-07 2023-07-19 ASML Netherlands B.V. Electron-optical assembly comprising electromagnetic shielding
CN118974871A (zh) * 2022-04-12 2024-11-15 华为技术有限公司 一种可调整的多电极准直装置
EP4307338B1 (en) * 2022-07-12 2024-11-27 Comet AG Radio frequency generator

Family Cites Families (73)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3157308A (en) 1961-09-05 1964-11-17 Clark Mfg Co J L Canister type container and method of making the same
US3159408A (en) 1961-10-05 1964-12-01 Grace W R & Co Chuck
US3924136A (en) * 1975-02-18 1975-12-02 Stanford Research Inst Charged particle apodized pattern imaging and exposure system
US4142133A (en) 1976-10-20 1979-02-27 Balandin Genrikh D Cathode-ray tube with variable energy of beam electrons
DE3231036A1 (de) * 1982-08-20 1984-02-23 Max Planck Gesellschaft Kombinierte elektrostatische objektiv- und emissionslinse
US4524308A (en) 1984-06-01 1985-06-18 Sony Corporation Circuits for accomplishing electron beam convergence in color cathode ray tubes
WO1994025880A1 (en) 1993-04-30 1994-11-10 Board Of Regents, The University Of Texas System Megavoltage scanning imager and method for its use
JP3253429B2 (ja) 1993-09-17 2002-02-04 富士通株式会社 電子ビーム装置
EP0766405A1 (en) 1995-09-29 1997-04-02 STMicroelectronics S.r.l. Successive approximation register without redundancy
JP3763446B2 (ja) * 1999-10-18 2006-04-05 キヤノン株式会社 静電レンズ、電子ビーム描画装置、荷電ビーム応用装置、および、デバイス製造方法
WO2001043157A1 (en) * 1999-12-13 2001-06-14 Semequip, Inc. Ion implantation ion source, system and method
KR100465117B1 (ko) * 2000-04-04 2005-01-05 주식회사 아도반테스토 다축전자렌즈를 이용한 멀티빔 노광장치, 복수의 전자빔을집속하는 다축전자렌즈, 반도체소자 제조방법
JP3728217B2 (ja) * 2000-04-27 2005-12-21 キヤノン株式会社 荷電粒子線露光装置およびデバイス製造方法
GB0029040D0 (en) * 2000-11-29 2001-01-10 Micromass Ltd Orthogonal time of flight mass spectrometer
JP2002217091A (ja) * 2001-01-19 2002-08-02 Nikon Corp 荷電粒子線露光装置
JP4156809B2 (ja) * 2001-01-31 2008-09-24 株式会社アドバンテスト 電子ビーム露光装置及び電子レンズ
US6797953B2 (en) 2001-02-23 2004-09-28 Fei Company Electron beam system using multiple electron beams
US6768125B2 (en) 2002-01-17 2004-07-27 Ims Nanofabrication, Gmbh Maskless particle-beam system for exposing a pattern on a substrate
EP1532649A2 (en) * 2002-06-15 2005-05-25 NFAB Limited A particle beam generator
JP2004063547A (ja) * 2002-07-25 2004-02-26 Nikon Corp 真空雰囲気下露光装置
EP1388883B1 (en) * 2002-08-07 2013-06-05 Fei Company Coaxial FIB-SEM column
ATE538412T1 (de) 2002-10-25 2012-01-15 Mapper Lithography Ip Bv Lithographisches system
AU2003276779A1 (en) 2002-10-30 2004-05-25 Mapper Lithography Ip B.V. Electron beam exposure system
JP2004214480A (ja) 2003-01-07 2004-07-29 Nikon Corp 露光装置
KR101068607B1 (ko) 2003-03-10 2011-09-30 마퍼 리쏘그라피 아이피 비.브이. 복수 개의 빔렛 발생 장치
JP4113032B2 (ja) * 2003-04-21 2008-07-02 キヤノン株式会社 電子銃及び電子ビーム露光装置
ATE524822T1 (de) 2003-05-28 2011-09-15 Mapper Lithography Ip Bv Belichtungsverfahren für strahlen aus geladenen teilchen
EP1491955A1 (en) * 2003-06-27 2004-12-29 ASML Netherlands B.V. Lithographic projection apparatus and device manufacturing method
EP1498930A1 (en) * 2003-07-14 2005-01-19 ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH Charged particle beam device with multi-source array
ATE381728T1 (de) 2003-07-30 2008-01-15 Mapper Lithography Ip Bv Modulator-schaltkreise
GB2406704B (en) * 2003-09-30 2007-02-07 Ims Nanofabrication Gmbh Particle-optic electrostatic lens
JP2005127800A (ja) 2003-10-22 2005-05-19 Toshiba Corp 電子線照射装置と照射方法および電子線描画装置
JP4406311B2 (ja) 2004-03-31 2010-01-27 株式会社荏原製作所 エネルギー線照射装置およびそれを用いたパタン作成方法
JP4547997B2 (ja) 2004-06-04 2010-09-22 株式会社ニコン 真空容器、露光装置、及び検査装置
WO2006043656A1 (ja) * 2004-10-21 2006-04-27 Hoya Corporation 微粒子堆積装置及び微粒子堆積方法
JP2006139958A (ja) * 2004-11-10 2006-06-01 Toshiba Corp 荷電ビーム装置
JP3929459B2 (ja) * 2004-11-11 2007-06-13 株式会社日立ハイテクノロジーズ 荷電粒子線露光装置
GB2435348B (en) 2004-11-17 2009-06-24 Ims Nanofabrication Ag Pattern lock system for particle-beam exposure apparatus
GB0425290D0 (en) * 2004-11-17 2004-12-15 Eastham Derek A Focussing masks
US7709815B2 (en) 2005-09-16 2010-05-04 Mapper Lithography Ip B.V. Lithography system and projection method
JP4732917B2 (ja) * 2006-02-15 2011-07-27 株式会社日立ハイテクノロジーズ 走査型電子顕微鏡及び欠陥検出装置
US7521687B2 (en) 2006-03-30 2009-04-21 Tokyo Electron Limited Static electricity deflecting device, electron beam irradiating apparatus, substrate processing apparatus, substrate processing method and method of manufacturing substrate
JP4533344B2 (ja) 2006-05-19 2010-09-01 キヤノン株式会社 真空装置、露光装置、及びデバイス製造方法
EP1983548A1 (en) 2007-04-20 2008-10-22 ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH Emitter chamber, charged particle apparatus and method for operating same
JP5497980B2 (ja) * 2007-06-29 2014-05-21 株式会社日立ハイテクノロジーズ 荷電粒子線応用装置、及び試料検査方法
WO2009026970A1 (en) * 2007-08-24 2009-03-05 Carl Zeiss Smt Ag Controllable optical element and method for operating an optical element with thermal actuators and projection exposure apparatus for semiconductor lithography
KR101570974B1 (ko) 2008-02-26 2015-11-23 마퍼 리쏘그라피 아이피 비.브이. 투사 렌즈 배열체
US8445869B2 (en) 2008-04-15 2013-05-21 Mapper Lithography Ip B.V. Projection lens arrangement
JP5408674B2 (ja) 2008-02-26 2014-02-05 マッパー・リソグラフィー・アイピー・ビー．ブイ． 投影レンズ構成体
WO2009141428A1 (en) 2008-05-23 2009-11-26 Mapper Lithography Ip B.V. Imaging system
WO2009147202A1 (en) 2008-06-04 2009-12-10 Mapper Lithography Ip B.V. Writing strategy
JP5250350B2 (ja) * 2008-09-12 2013-07-31 株式会社日立ハイテクノロジーズ 荷電粒子線応用装置
TWI479530B (zh) 2008-10-01 2015-04-01 Mapper Lithography Ip Bv 靜電透鏡結構、靜電透鏡陣列、帶電粒子的子束微影系統以及製造絕緣結構的方法
US10054754B2 (en) * 2009-02-04 2018-08-21 Nikon Corporation Thermal regulation of vibration-sensitive objects with conduit circuit having liquid metal, pump, and heat exchanger
DE102009009221A1 (de) * 2009-02-17 2010-08-26 Carl Zeiss Smt Ag Projektionsbelichtungsanlage für die Halbleiterlithographie mit einem Aktuatorsystem
CN102422380A (zh) * 2009-02-22 2012-04-18 迈普尔平版印刷Ip有限公司 带电粒子微影设备及真空腔室中产生真空的方法
US20110049393A1 (en) 2009-02-22 2011-03-03 Mapper Lithography Ip B.V. Lithography Machine and Substrate Handling Arrangement
KR101553802B1 (ko) 2009-02-22 2015-09-17 마퍼 리쏘그라피 아이피 비.브이. 진공 챔버에서 진공을 실현하기 위한 장치 및 방법
JP2010282799A (ja) 2009-06-03 2010-12-16 Canon Inc 荷電粒子線描画装置およびデバイス製造方法
DE112010002551B4 (de) * 2009-06-16 2019-10-31 Hitachi High-Technologies Corporation Geladene teilchen abstrahlende vorrichtung
KR20120093943A (ko) 2009-10-09 2012-08-23 마퍼 리쏘그라피 아이피 비.브이. 고전압 차폐 장치
GB201003566D0 (en) * 2010-03-03 2010-04-21 Ilika Technologies Ltd Mass spectrometry apparatus and methods
WO2011154731A1 (en) * 2010-06-08 2011-12-15 Micromass Uk Limited Mass spectrometer with beam expander
US8586949B2 (en) 2010-11-13 2013-11-19 Mapper Lithography Ip B.V. Charged particle lithography system with intermediate chamber
WO2012062934A1 (en) 2010-11-13 2012-05-18 Mapper Lithography Ip B.V. Charged particle beam modulator
WO2012062854A1 (en) * 2010-11-13 2012-05-18 Mapper Lithography Ip B.V. Lithography system and method of refracting
JP5709535B2 (ja) * 2011-01-07 2015-04-30 キヤノン株式会社 電子ビーム描画装置、およびそれを用いた物品の製造方法
JP5822535B2 (ja) * 2011-05-16 2015-11-24 キヤノン株式会社 描画装置、および、物品の製造方法
JP2013008534A (ja) * 2011-06-23 2013-01-10 Canon Inc 荷電粒子線レンズ用電極
JP2013171925A (ja) * 2012-02-20 2013-09-02 Canon Inc 荷電粒子線装置、それを用いた物品の製造方法
KR101945964B1 (ko) 2012-05-14 2019-02-11 마퍼 리쏘그라피 아이피 비.브이. 하전 입자 다중-빔렛 리소그래피 시스템 및 냉각 장치 제조 방법
JP2014116518A (ja) * 2012-12-11 2014-06-26 Canon Inc 描画装置及び物品の製造方法
WO2016158421A1 (ja) 2015-04-03 2016-10-06 株式会社日立ハイテクノロジーズ 光量検出装置、それを用いた免疫分析装置および荷電粒子線装置

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI603375B (zh) * 2014-06-13 2017-10-21 英特爾股份有限公司 電子束裝置和使用電子束裝置的即時對準方法
TWI709992B (zh) * 2016-12-01 2020-11-11 以色列商應用材料以色列公司 用於檢查試樣之方法以及帶電粒子多束裝置

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Publication number Publication date
KR102023056B1 (ko) 2019-09-20
CN107359101B (zh) 2019-07-12
CN107359101A (zh) 2017-11-17
NL2010802A (en) 2013-11-18
TW201401331A (zh) 2014-01-01
KR20150010994A (ko) 2015-01-29
WO2013171229A1 (en) 2013-11-21
CN104428866A (zh) 2015-03-18
US9653261B2 (en) 2017-05-16
JP2015516690A (ja) 2015-06-11
US20150124229A1 (en) 2015-05-07
KR101961914B1 (ko) 2019-03-25
JP6239596B2 (ja) 2017-11-29
TWI604493B (zh) 2017-11-01
NL2010797A (en) 2013-11-18
NL2010797C2 (en) 2014-08-21
JP6430606B2 (ja) 2018-11-28
US10037864B2 (en) 2018-07-31
CN104520968B (zh) 2017-07-07
WO2013171214A1 (en) 2013-11-21
NL2013321C2 (en) 2015-05-07
KR20150010993A (ko) 2015-01-29
EP2852966A1 (en) 2015-04-01
CN104520968A (zh) 2015-04-15
NL2013320A (en) 2014-11-24
JP2015517735A (ja) 2015-06-22
JP2018041964A (ja) 2018-03-15
NL2013321A (en) 2014-11-06
JP6219374B2 (ja) 2017-10-25
NL2013320C2 (en) 2015-06-15
NL2010802C2 (en) 2014-08-25
US20170250053A1 (en) 2017-08-31

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