CN104425527B - The method for dividing of the wafer laminate of Image Sensor - Google Patents
The method for dividing of the wafer laminate of Image Sensor Download PDFInfo
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- CN104425527B CN104425527B CN201410345791.1A CN201410345791A CN104425527B CN 104425527 B CN104425527 B CN 104425527B CN 201410345791 A CN201410345791 A CN 201410345791A CN 104425527 B CN104425527 B CN 104425527B
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- 238000000034 method Methods 0.000 title claims abstract description 22
- 239000011521 glass Substances 0.000 claims abstract description 37
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 36
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 36
- 239000010703 silicon Substances 0.000 claims abstract description 36
- 208000037656 Respiratory Sounds Diseases 0.000 claims abstract description 12
- 239000011347 resin Substances 0.000 claims abstract description 8
- 229920005989 resin Polymers 0.000 claims abstract description 8
- 238000003825 pressing Methods 0.000 claims description 4
- 238000005520 cutting process Methods 0.000 abstract description 25
- 238000004806 packaging method and process Methods 0.000 description 11
- 239000002173 cutting fluid Substances 0.000 description 8
- 239000000463 material Substances 0.000 description 8
- 238000005516 engineering process Methods 0.000 description 5
- 230000007246 mechanism Effects 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 238000003466 welding Methods 0.000 description 4
- BVPWJMCABCPUQY-UHFFFAOYSA-N 4-amino-5-chloro-2-methoxy-N-[1-(phenylmethyl)-4-piperidinyl]benzamide Chemical compound COC1=CC(N)=C(Cl)C=C1C(=O)NC1CCN(CC=2C=CC=CC=2)CC1 BVPWJMCABCPUQY-UHFFFAOYSA-N 0.000 description 3
- 230000008859 change Effects 0.000 description 3
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- 238000012986 modification Methods 0.000 description 3
- 238000011084 recovery Methods 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- 239000000470 constituent Substances 0.000 description 2
- 238000010276 construction Methods 0.000 description 2
- 230000002950 deficient Effects 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 241000699670 Mus sp. Species 0.000 description 1
- 238000005299 abrasion Methods 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 230000003028 elevating effect Effects 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 238000011049 filling Methods 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
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- 230000003287 optical effect Effects 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 230000005622 photoelectricity Effects 0.000 description 1
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Electromagnetism (AREA)
- Dicing (AREA)
- Processing Of Stones Or Stones Resemblance Materials (AREA)
- Solid State Image Pick-Up Elements (AREA)
Abstract
The invention relates to a kind of method for dividing of the wafer laminate of Image Sensor.The method for dividing of the wafer laminate W of the Image Sensor of the present invention, the wafer laminate W of the Image Sensor, it is to be constructed made of the resin layer 4 configured in a manner of surrounding each photodiode forming region 3 is bonded with by glass wafer 1 and Silicon Wafer 2；Make scribe wheel 10, rotated while being pressed along the disjunction preset lines of the upper surface of glass wafer, forms the score line S being made of the crackle being impregnated with toward thickness direction whereby；Then, by below Silicon Wafer side pressed with brisement bar 14 along score line, so that wafer laminate is bent and disjunction glass wafer, and also disjunction Silicon Wafer.Technical solution provided by the invention can not use cast-cutting saw, and carry out in a effective manner and ideally disjunction with the simple gimmick of dry type tool.
Description
Technical field
The present invention relates to a kind of wafer-level packaging (wafer for being formed with CMOS Image Sensor to patterning
level package；WLP wafer laminate) carries out the method for dividing of singualtion.
Background technology
In recent years, various in the low electric power of attention, high function, highly integrated mobile phone, digital camera, optical mice etc.
In miniature electric machine field, the use of CMOS Image Sensor rapidly increases.
Fig. 5 is the structure for wafer-level packaging (unit article of the chip size) W1 for being diagrammatically denoted by CMOS Image Sensor
At the sectional view of example.Wafer-level packaging W1 has the glass wafer 1 (through singualtion) with (through singualtion) Silicon Wafer 2 to clip
Lamination made of the mode in resin next door 4 engages constructs.
It is formed with photodiode (photodiode) forming region (sensing area in the upper surface of Silicon Wafer 2 (engagement surface side)
Domain) 3, and by resin next door 4 surround in lattice shape it is surrounding in a manner of configure, make to be provided with photodiode whereby and form area
The inner space in domain 3 becomes airtight conditions.Further, in the upper of (outside of photodiode forming region 3) Silicon Wafer 2
Face is formed with metal gasket 5, and the adjacent underneath in the part for being formed with the metal gasket 5 is formed with the through-hole of Silicon Wafer 2 up and down
(through hole) 6.The good conduction material 7 of electrical conductivity is filled in through-hole 6, and welding convex block is formed in 6 lower end of through-hole
(bump)8.In this way, the composition for forming through-hole 6 and filling conduction material 7 to be electrically connected is known as straight-through silicon wafer perforation
(Through Silicon Via；TSV).
In addition, below above-mentioned welding convex block 8, engagement has been patterned with the PCB substrate of set electric circuit
Deng (illustration omitted).
The unit article of chip size, that is, wafer-level packaging W1 as shown in FIG. 6 and 7 will be as the big face of parent
On wafer laminate W made of long-pending glass wafer 1 is engaged with the Silicon Wafer 2 of large area by resin next door 4, by X-
The disjunction preset lines L that Y-direction extends distinguish in lattice shape and pattern to be formed it is multiple, and by along disjunction preset lines L point
Break wafer laminate W, and becomes the wafer-level packaging W1 of the chip size (through singualtion).
In addition, in disjunction Silicon Wafer becomes the processing of the product of wafer-level packaging, including CMOS Image Sensor is used
Product processing, it is existing it is known be cast-cutting saw (dicing using as disclosed in 1~patent document of patent document 4
saw).Cast-cutting saw has and carries out high-speed rotating rotating blade, and is configured on one side spray rotating blade and cleans rotating blade
Cooling and cutting when the cutting fluid of cutting swarf that generates cut on one side.
Patent document 1：Japanese Unexamined Patent Publication 5-090403 bulletins
Patent document 2：Japanese Unexamined Patent Publication 6-244279 bulletins
Patent document 3：Japanese Unexamined Patent Publication 2002-224929 bulletins
Patent document 4：Japanese Unexamined Patent Publication 2003-051464 bulletins
Above-mentioned cast-cutting saw, due to being by the cutting progress disjunction for using rotating blade, a large amount of real estates of cutting swarf
It is raw, even if for example being cleaned using cutting fluid, but also make due to dispersing there are the part residual of cutting fluid or when cutting
Cutting swarf is attached to situations such as package surface, and as quality or the larger reason of qualification rate reduction.Further, since must be useful
In the supply of cutting fluid or the mechanism of devil liquor recovery or piping, so that unit scale becomes larger.Further, since being by cutting
And disjunction glass wafer, therefore it is quite a lot of the case where cutting face generates small clast (shortcoming), and relatively perfect point can not be obtained
Section.Further, since the sword front end for carrying out high-speed rotating rotating blade is formed with zigzag, thus the abrasion of sword front end or
Breakage easy tos produce and service life is shorter.Further, being considered in terms of intensity due to the thickness of rotating blade can not be set as
It is relatively thin, even and path also forms 60 μm or more of thickness, therefore be not only necessary there are cutting width and also at
Be limited one of the factor efficiently used the problems such as point of prepared material.
Invention content
The purpose of the present invention is to provide one kind capable of using cast-cutting saw, and has effect with the simple gimmick of dry type
The method for dividing on ground and the Image Sensor wafer of more ideally progress disjunction, encapsulation.
In order to achieve the above objectives, it proposes in the present invention such as technical means below.Also that is, point of the present invention
Disconnected method, is the method for dividing of the wafer laminate of Image Sensor, the wafer laminate of the Image Sensor, is to have
The Silicon Wafer of multiple photodiode forming regions is formed with by glass wafer, with pattern in length and breadth, by respectively should to surround
It is constructed made of the resin layer fitting that the mode of photodiode forming region configures；The method for dividing makes circumferentially crest line
Scribe wheel with sword front end is rotated along the disjunction preset lines of the upper surface of the glass wafer while being pressed, whereby
Form the score line being made of the crackle being impregnated with toward thickness direction；Then, by from side below the Silicon Wafer along the score line
It is pressed with brisement bar, so that the wafer laminate is bent and so that the crackle of glass wafer is further impregnated with to disjunction glass
Wafer, and also disjunction Silicon Wafer.
The object of the invention to solve the technical problems also can be used following technical measures and further realize.
The method for dividing of the wafer laminate of Image Sensor above-mentioned, wherein below the Silicon Wafer, as
The position at the back side of the predetermined line position of the disjunction above the glass wafer, is pre-formed after grooving and is pressed with brisement bar.
The method for dividing of the wafer laminate of Image Sensor above-mentioned, wherein it is formed with TSV in the wafer laminate,
When processing the step of through-hole of the TSV, the grooving is also formed.
By above-mentioned technical proposal, the present invention at least has following advantages：
According to the present invention, since when carrying out disjunction with brisement bar, the crackle of glass wafer is impregnated with and divides toward thickness direction
It is disconnected, there is no need to need cutting width such as the existing known situation cut using cast-cutting saw, and can efficiently use
Material, and the generations such as clast can be inhibited, and can be with more perfect section disjunction.Further, since cutting swarf is not generated,
Therefore quality deterioration or defective products caused by the attachment of cutting swarf can not be generated.
Especially in the present invention, cutting fluid is used not such as existing known cast-cutting saw, but under dry environment
Disjunction is carried out, therefore with can omit for the supply of cutting fluid or the mechanism of devil liquor recovery or piping, and can also omit cut-out
Afterwards clean or drying steps and be capable of exquisitenessization constituent apparatus effect.
It, also can be below the Silicon Wafer, pre- as the disjunction above the glass wafer in above-mentioned method for dividing
The position at the back side of alignment position is pre-formed after grooving and is pressed with brisement bar.
It whereby, also can be easily from the groove and with more perfect when carrying out glass wafer disjunction using the brisement bar
Disjunction face disjunction Silicon Wafer.
In addition, in the wafer laminate for forming TSV, by when processing the step of through-hole of the TSV, also forms this and cut
Slot, and the procedure of processing of grooving can be simplified.
Above description is only the general introduction of technical solution of the present invention, in order to better understand the technical means of the present invention,
And can be implemented in accordance with the contents of the specification, and in order to allow the above and other objects, features and advantages of the present invention can
It is clearer and more comprehensible, it is special below to lift preferred embodiment, and coordinate attached drawing, detailed description are as follows.
Description of the drawings
Fig. 1 is the schema for the first stage for indicating the method for dividing of the present invention.
Fig. 2 is the schema for the second stage for indicating the method for dividing of the present invention.
Fig. 3 is the schema for the other embodiment for indicating Fig. 2.
Fig. 4 (a) and Fig. 4 (b) is to indicate that the scribe wheel used in the present invention keeps the schema of tool part with it.
Fig. 5 is the sectional view of an example for the wafer-level packaging for indicating CMOS Image Sensor.
Fig. 6 is the sectional view for the part for indicating the CMOS Image Sensor wafer laminates as base material.
Fig. 7 is the vertical view schematically for the CMOS Image Sensor wafer laminates for indicating Fig. 6.
【Main element symbol description】
L：Disjunction preset lines S：Score line
W：Wafer laminate W1：Wafer-level packaging
1：Glass wafer 2：Silicon Wafer
10：Scribe wheel 10a：Sword front end
14：Brisement bar 15：Groove
Specific implementation mode
Hereinafter, illustrating the details of the method for dividing of the wafer laminate of the Image Sensor of the present invention according to schema.
Fig. 1 is the first stage for indicating the method for dividing of the present invention, indicates the CMOS image sensings as processing object
A part of section of the wafer laminate W of device.The construction of wafer laminate W, be with shown in above-mentioned Fig. 5~Fig. 7 substantially
Identical construction.
Also that is, by as the glass wafer 1 of the large area of parent (such as a diameter of 8 inches), be configured at side below
Silicon Wafer 2, engaged by the resin next door 4 of clathrate.
The upper surface of Silicon Wafer 2 (engagement surface side) is provided with photodiode forming region (sensing region) 3.In photoelectricity two
Pole pipe forming region 3 is formed with photodiode array, is functioned using the light-receiving surface as Image Sensor.Moreover,
Near photodiode forming region 3, it is formed with metal gasket 5, the adjacent underneath in the part for being formed with the metal gasket 5 is formed
There is the through-hole (through hole) 6 of Silicon Wafer 2 up and down.The good conduction material 7 (TSV) of electrical conductivity is filled in through-hole 6, in through-hole
6 lower ends are formed with welding convex block 8.In addition, below above-mentioned welding convex block 8, engagement has been patterned with set electricity
PCB substrate on pneumoelectric road etc. (illustration omitted).
CMOS Image Sensor wafer laminate W, as shown in Figure 7 as by along in the directions X-Y extend clathrate
Disjunction preset lines L disjunctions and singualtion, the unit article of chip size, that is, wafer-level packaging W1 is taken out.
It is illustrated then for disjunction processing sequence.When along disjunction preset lines L disjunction wafer laminate W, first,
It (is soaked from crackle toward thickness direction in the processing of the surface of glass wafer 1 using the scribe wheel 10 as shown in Fig. 4 (a) and Fig. 4 (b)
Saturating cracking) constitute score line.
Scribe wheel 10 is formed with superhard alloy or the sintering good material of tool characteristics such as diamond, and (outer in circumference crest line
Circumferential surface) it is formed with sword front end 10a.Though specifically, being preferably using a diameter of 1~6mm, preferably 1.5~4mm, and before sword
It is 85~150 degree, preferably 105~140 degree to hold angle, but can be fitted according to the thickness or type of processed glass wafer 1
Locality selection.
The scribe wheel 10 keeps tool 11 in being rotatably supported at, and is held in delineation by elevating mechanism 12
Head (illustration omitted).Engraving head is with can be in the top of the platen (illustration omitted) of horizontal mounting wafer laminate W along disjunction
The mode of the direction movement of preset lines L is formed.
Moreover, as shown in Figure 1, by make scribe wheel 10 the surface of glass wafer 1 carry out on one side along disjunction preset lines by
Pressure rotates on one side, and the score line S being made of crackle is formed in glass wafer 1.Score line S, preferably to be impregnated with to glass
The crackle of the half of 1 thickness of wafer or so is formed.In addition, score line S is formed at the outer of the resin next door 4 of wafer-level packaging W1
Side.
Then, in second stage shown in Fig. 2, substrate (wafer laminate W) is inverted, in the lateral surface of glass wafer 1
(with surface side opposing face is engaged) configures the pair of right and left pedestal 13,13 extended along its both sides in a manner of clipping score line S,
It is pressed with the brisement bar 14 of strip from the exterior side (with joint surface opposing face) of Silicon Wafer 2 towards score line S.It, can in the situation
Also groove has been pre-machined along disjunction preset lines L in the lateral surface (with joint surface opposing face) relative to score line S of Silicon Wafer 2
15.The groove 15, if in the Silicon Wafer 2 for example to wafer laminate W, with grooves such as RIE (Reactive-ion etching)
When processing technology processes through-hole 6, it is formed simultaneously, then can be efficiently processed using identical processing technology.
It is by the pressing of the brisement bar 14, glass wafer 1 and Silicon Wafer 2 is past with pressing direction opposite side flexure, glass
The score line S that is, crackle of wafer 1 are impregnated with and disjunction glass wafer 1 toward thickness universe, and Silicon Wafer 2 also divides along groove 15
It is disconnected, whereby by the wafer-level packaging W1 through singualtion along the complete disjunctions of disjunction preset lines L.
In the disjunction, glass wafer 1 is broken in such a way that the crackle as score line S is impregnated with toward thickness direction,
Therefore can inhibit such as the generation of clast as the existing known situation cut using cast-cutting saw etc., it can be with more perfect
Section disjunction.Further, since disjunction preset lines L is also provided with groove 15 in advance in Silicon Wafer 2, therefore also can be to silicon
Wafer 2 carries out disjunction along groove 15 with more perfect disjunction face.
In addition, Silicon Wafer 2, in most situations (by grinding), thickness is 25 μm~100 μm, thin in the extreme, therefore
Even if being not provided with groove 15 as above, can also be bent by caused by the pressing using brisement bar 14, and and glass
The disjunction of wafer 1 is simultaneously and easily disjunction.Therefore, the step of can also omitting processing groove 15.
As above, when carrying out brisement processing using brisement bar 14, since the crackle of the score line S of glass wafer 1 is past
Thickness direction is impregnated with and disjunction, it is therefore not necessary to need cutting wide such as the existing known situation cut using cast-cutting saw
Degree, and material can be efficiently used.Further, since not generating cutting swarf, therefore can not generate because the attachment of cutting swarf causes
Quality deterioration or defective products.Especially in the present invention, not such as existing known cast-cutting saw using cutting fluid, but
Disjunction is carried out under dry environment, therefore can be omitted for the supply of cutting fluid or the mechanism of devil liquor recovery or piping, it can be exquisite
Change ground constituent apparatus.
In the present invention, when carrying out brisement processing using brisement bar 14, it also may replace the left and right one for bearing glass wafer 1
To pedestal 13,13, and as shown in Figure 3 as, fender 16 is configured to connect with the face of glass wafer 1, which is
The thickness of degree with the flexure of glass wafer 1 that can be recessed.
The method for dividing of the present invention, can be used in the disjunction for the wafer laminate for being fitted with glass wafer and Silicon Wafer.
The above described is only a preferred embodiment of the present invention, limitation in any form not is done to the present invention, though
So the present invention has been disclosed as a preferred embodiment, and however, it is not intended to limit the invention, any technology people for being familiar with this profession
Member, without departing from the scope of the present invention, when the technology contents using the disclosure above make a little change or modification
For the equivalent embodiment of equivalent variations, as long as being the content without departing from technical solution of the present invention, according to the technical essence of the invention
Any simple modification, equivalent change and modification made to the above embodiment, in the range of still falling within technical solution of the present invention.
Claims (3)
1. a kind of method for dividing of the wafer laminate of Image Sensor, the wafer laminate of the Image Sensor are tools
There is the Silicon Wafer that multiple photodiode forming regions are formed with by glass wafer, with pattern in length and breadth, by each to surround
It is constructed made of the resin layer fitting that the mode of the photodiode forming region configures；It is characterized in that：
Make circumferentially scribe wheel of the crest line with sword front end, is carried out on one side along the disjunction preset lines of the upper surface of the glass wafer
Pressing rotates on one side, forms the score line being made of the crackle being impregnated with toward thickness direction whereby；
Then, it is pressed with brisement bar by from side below the Silicon Wafer along the score line, the wafer laminate is made to bend
And the crackle of glass wafer is made further to be impregnated with to disjunction glass wafer, and also disjunction Silicon Wafer.
2. the method for dividing of the wafer laminate of Image Sensor according to claim 1, it is characterised in that：Wherein exist
Below the Silicon Wafer, in the position at the back side as the predetermined line position of the disjunction above the glass wafer, it is pre-formed and cuts
It is pressed with brisement bar after slot.
3. the method for dividing of the wafer laminate of Image Sensor according to claim 2, it is characterised in that：Wherein exist
The wafer laminate is formed with straight-through Silicon Wafer perforation TSV, when processing the step of through-hole of straight-through Silicon Wafer perforation TSV,
Also the grooving is formed.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2013170863A JP6140030B2 (en) | 2013-08-21 | 2013-08-21 | Method for dividing wafer laminate for image sensor |
| JP2013-170863 | 2013-08-21 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN104425527A CN104425527A (en) | 2015-03-18 |
| CN104425527B true CN104425527B (en) | 2018-09-25 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201410345791.1A Active CN104425527B (en) | 2013-08-21 | 2014-07-18 | The method for dividing of the wafer laminate of Image Sensor |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JP6140030B2 (en) |
| KR (1) | KR102176459B1 (en) |
| CN (1) | CN104425527B (en) |
| TW (1) | TWI615254B (en) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105826180A (en) * | 2015-01-08 | 2016-08-03 | 三星钻石工业股份有限公司 | Method and device for breaking image sensor-used wafer laminated body |
| CN104843488B (en) * | 2015-04-10 | 2017-12-29 | 京东方科技集团股份有限公司 | A kind of output device and cutting splitting system |
| JP6561565B2 (en) * | 2015-04-30 | 2019-08-21 | 三星ダイヤモンド工業株式会社 | Method and apparatus for dividing bonded substrate |
| WO2021138794A1 (en) * | 2020-01-07 | 2021-07-15 | Yangtze Memory Technologies Co., Ltd. | Methods for multi-wafer stacking and dicing |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103165532A (en) * | 2011-12-12 | 2013-06-19 | 佳能株式会社 | Method of manufacturing semiconductor element |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0590403A (en) * | 1991-08-01 | 1993-04-09 | Disco Abrasive Syst Ltd | Cutting apparatus |
| JPH06244279A (en) | 1993-02-19 | 1994-09-02 | Fujitsu Miyagi Electron:Kk | Dicing saw |
| IL135794A (en) * | 2000-04-23 | 2004-07-25 | Coppergate Comm Ltd | Method and apparatus for transmission of voice and data over subscriber line |
| JP2002224929A (en) * | 2001-01-30 | 2002-08-13 | Takemoto Denki Seisakusho:Kk | Device for cutting plate-like workpiece |
| JP2003051464A (en) | 2001-08-03 | 2003-02-21 | Takemoto Denki Seisakusho:Kk | Inspection means for cutting in cutting apparatus for flat work to be machined |
| CN102284797B (en) * | 2005-07-06 | 2015-01-07 | 三星钻石工业股份有限公司 | Method for manufacturing brittle material scribing wheel |
| TWI270183B (en) * | 2005-12-30 | 2007-01-01 | Advanced Semiconductor Eng | Wafer-level chip package process |
| JP5067828B2 (en) * | 2006-03-10 | 2012-11-07 | Ａｇｃテクノグラス株式会社 | Glass substrate cutting method and optical glass |
| JP2009204780A (en) * | 2008-02-27 | 2009-09-10 | Mitsubishi Electric Corp | Liquid crystal panel and method of manufacturing the same |
| JP5436906B2 (en) * | 2009-03-26 | 2014-03-05 | ラピスセミコンダクタ株式会社 | Manufacturing method of semiconductor device |
| JP2013012552A (en) * | 2011-06-28 | 2013-01-17 | Sony Corp | Semiconductor device and semiconductor device manufacturing method |
| US8569086B2 (en) * | 2011-08-24 | 2013-10-29 | Taiwan Semiconductor Manufacturing Company, Ltd. | Semiconductor device and method of dicing semiconductor devices |
| JP2013089622A (en) * | 2011-10-13 | 2013-05-13 | Mitsuboshi Diamond Industrial Co Ltd | Breaking method of semiconductor substrate |
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- 2013-08-21 JP JP2013170863A patent/JP6140030B2/en not_active Expired - Fee Related
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- 2014-04-18 TW TW103114168A patent/TWI615254B/en active
- 2014-07-03 KR KR1020140082926A patent/KR102176459B1/en active IP Right Grant
- 2014-07-18 CN CN201410345791.1A patent/CN104425527B/en active Active
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103165532A (en) * | 2011-12-12 | 2013-06-19 | 佳能株式会社 | Method of manufacturing semiconductor element |
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| Publication number | Publication date |
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| TWI615254B (en) | 2018-02-21 |
| JP2015041652A (en) | 2015-03-02 |
| CN104425527A (en) | 2015-03-18 |
| JP6140030B2 (en) | 2017-05-31 |
| KR102176459B1 (en) | 2020-11-09 |
| TW201507834A (en) | 2015-03-01 |
| KR20150021878A (en) | 2015-03-03 |
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