CN102142509A - Light emitting diode package and method for forming the same - Google Patents
Light emitting diode package and method for forming the same Download PDFInfo
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- CN102142509A CN102142509A CN2010106152226A CN201010615222A CN102142509A CN 102142509 A CN102142509 A CN 102142509A CN 2010106152226 A CN2010106152226 A CN 2010106152226A CN 201010615222 A CN201010615222 A CN 201010615222A CN 102142509 A CN102142509 A CN 102142509A
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- 238000000034 method Methods 0.000 title claims abstract description 66
- 230000005855 radiation Effects 0.000 claims abstract description 132
- 239000004065 semiconductor Substances 0.000 claims abstract description 87
- 239000000463 material Substances 0.000 claims abstract description 57
- 239000000758 substrate Substances 0.000 claims abstract description 7
- 230000004888 barrier function Effects 0.000 claims description 100
- 238000005538 encapsulation Methods 0.000 claims description 53
- 230000015572 biosynthetic process Effects 0.000 claims description 23
- 230000000153 supplemental effect Effects 0.000 claims description 5
- 239000010410 layer Substances 0.000 description 89
- 230000008569 process Effects 0.000 description 18
- 239000013078 crystal Substances 0.000 description 16
- 238000009713 electroplating Methods 0.000 description 10
- 238000000059 patterning Methods 0.000 description 10
- 238000005229 chemical vapour deposition Methods 0.000 description 7
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 6
- 239000004020 conductor Substances 0.000 description 6
- 239000010949 copper Substances 0.000 description 6
- 229910052802 copper Inorganic materials 0.000 description 6
- 238000004806 packaging method and process Methods 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 238000007772 electroless plating Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 229910000881 Cu alloy Inorganic materials 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 208000027418 Wounds and injury Diseases 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000002041 carbon nanotube Substances 0.000 description 1
- 229910021393 carbon nanotube Inorganic materials 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 208000014674 injury Diseases 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 239000002086 nanomaterial Substances 0.000 description 1
- 239000002061 nanopillar Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 239000011435 rock Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
- H01L33/642—Heat extraction or cooling elements characterized by the shape
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/12—Mountings, e.g. non-detachable insulating substrates
- H01L23/14—Mountings, e.g. non-detachable insulating substrates characterised by the material or its electrical properties
- H01L23/147—Semiconductor insulating substrates
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/367—Cooling facilitated by shape of device
- H01L23/3677—Wire-like or pin-like cooling fins or heat sinks
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49827—Via connections through the substrates, e.g. pins going through the substrate, coaxial cables
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01078—Platinum [Pt]
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01079—Gold [Au]
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/102—Material of the semiconductor or solid state bodies
- H01L2924/1025—Semiconducting materials
- H01L2924/10251—Elemental semiconductors, i.e. Group IV
- H01L2924/10253—Silicon [Si]
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1204—Optical Diode
- H01L2924/12041—LED
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/483—Containers
- H01L33/486—Containers adapted for surface mounting
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Led Device Packages (AREA)
Abstract
A light emitting diode package and a method for forming the same are provided, wherein the light emitting diode package includes a semiconductor substrate having a first surface and a second surface; at least a through-hole passing through the first and second surfaces of the semiconductor substrate; at least a heat radiation hole extending from the second surface toward the first surface; a heat conduction material filled in the heat radiation hole to for a heat radiation plug that is close to a first end of the first surface and a second end of the second surface; an insulating layer overlying a sidewall of the through-hole and extending overlying the first surface and the second surface, wherein the insulating layer covers at least one of the first end, the second end and a sidewall of the heat radiation plug; a conducting layer overlying the insulating layer in the through-hole and extending to the first surface and the second surface; and an LED chip disposed on the first or second surface and having an electrode electrically connected to the conducting layer. The invention can furthre improve heat radiation performance of a chip package.
Description
Technical field
The present invention is relevant for wafer encapsulation body and forming method thereof, and be particularly to have heat radiation connector light-emitting diode (LED) packaging body of (thermal via).
Background technology
Wafer encapsulation body is also protected wafer to avoid environmental contaminants and is polluted except the wafer linkage interface that is packaged in wherein is provided.
Along with functional increase, during the wafer running, may produce a large amount of heat energy, it causes adverse influence to wafer usefulness.Particularly for LED wafer, the heat energy that is produced during the running may seriously lower the characteristic and the useful life of LED wafer.
Therefore, industry is needed the good wafer encapsulation body of heat radiation badly.
Summary of the invention
The invention provides a kind of LED encapsulation body, comprising: the semiconductor substrate has a first surface and a second surface; This first surface and this second surface at this semiconductor-based end are passed at least one perforation; At least one heat radiation hole, this second surface at this semiconductor-based end extends towards this first surface certainly; One Heat Conduction Material is filled among this heat radiation hole to form a heat radiation connector, and wherein this heat radiation connector has one second end that reaches close this second surface near one first end of this first surface; One insulating barrier is positioned on the sidewall of this perforation and extends on this first surface and this second surface at this semiconductor-based end, wherein this insulating barrier further cover this first end, this second end and this heat radiation connector a sidewall at least one of them; One conductive layer is arranged on this insulating barrier of this perforation, and extends on this first surface and this second surface at this semiconductor-based end; And a LED wafer, be arranged on this first surface or this second surface at this semiconductor-based end, and have an electrode, be electrically connected to this conductive layer.
LED encapsulation body of the present invention, a size of this perforation is greater than a size of this heat radiation hole.
LED encapsulation body of the present invention, this Heat Conduction Material fill up this heat radiation hole fully.
LED encapsulation body of the present invention, this Heat Conduction Material extend on this second surface at this semiconductor-based end to link a plurality of described heat radiation connectors.
LED encapsulation body of the present invention, this Heat Conduction Material are the part of this conductive layer.
LED encapsulation body of the present invention, this Heat Conduction Material and this conductive layer form respectively.
LED encapsulation body of the present invention, this Heat Conduction Material is electrically insulated with this conductive layer by this insulating barrier.
LED encapsulation body of the present invention, this conductive layer further extend under this heat radiation connector.
LED encapsulation body of the present invention, this insulating barrier that is positioned on this second surface at this semiconductor-based end is a homogenous material layer.
LED encapsulation body of the present invention, this insulating barrier that is positioned on this first surface at this perforation and this semiconductor-based end comprises a plurality of material layers.
The present invention also provides a kind of formation method of LED encapsulation body, comprising: the semiconductor substrate is provided, has a first surface and a second surface; This second surface from this semiconductor-based end forms at least one first hole and at least one second hole towards this first surface, and wherein the degree of depth of this first hole is greater than the degree of depth of this second hole; Form a perforation from this semiconductor-based end of this first surface thinning to expose this first hole, wherein this second hole is as the hole that dispels the heat that extends towards this first surface from this second surface at this semiconductor-based end; Fill a Heat Conduction Material to form a heat radiation connector in this heat radiation hole, wherein this heat radiation connector has near one first end of this first surface and one second end of close this second surface; Form one first insulating barrier on a sidewall of this perforation, and extend on this first surface and this second surface at this semiconductor-based end, wherein this first insulating barrier further be covered in this first end, this second end and this heat radiation connector a sidewall at least one of them; Form on a conductive layer this first insulating barrier in this perforation, and extend on this first surface and this second surface at this semiconductor-based end; And a LED wafer is arranged on this first surface or this second surface at this semiconductor-based end, wherein this LED wafer has an electrode, is electrically connected to this conductive layer.
The formation method of LED encapsulation body of the present invention, the step that forms this first insulating barrier is to fill in this heat radiation hole this Heat Conduction Material carries out after forming this heat radiation connector, makes this first insulating barrier further cover this second end of this heat radiation connector.
The formation method of LED encapsulation body of the present invention, this Heat Conduction Material is electrically insulated with this conductive layer by this first insulating barrier on this second surface that extends in this semiconductor-based end.
The formation method of LED encapsulation body of the present invention, the step that forms this first insulating barrier is to fill in this heat radiation hole this Heat Conduction Material carried out before forming this heat radiation connector, made this first insulating barrier further cover this sidewall of this first end and this heat radiation connector.
The formation method of LED encapsulation body of the present invention, this Heat Conduction Material and this conductive layer form simultaneously.
The formation method of LED encapsulation body of the present invention, also comprise: after forming this first insulating barrier and the step of filling this Heat Conduction Material, this second surface grinds this semiconductor-based end and suprabasil this first insulating barrier of this semiconductor so that this second end of this heat radiation connector exposes certainly; And form a supplemental dielectric layer on this second end of this second surface at this first insulating barrier, this semiconductor-based end and this heat radiation connector.
The formation method of LED encapsulation body of the present invention, this conductive layer are formed on this first insulating barrier and this supplemental dielectric layer simultaneously.
The formation method of LED encapsulation body of the present invention, this first hole and this second hole form simultaneously.
The formation method of LED encapsulation body of the present invention, a size of this first hole is greater than a size of this second hole.
The formation method of LED encapsulation body of the present invention also comprises: form a barrier structure to cover this perforation; And after forming this heat radiation connector, remove this barrier structure.
The present invention can make the thermal diffusivity of wafer encapsulation body further promote.
Description of drawings
Figure 1A-1H shows a series of processing procedure profiles of LED encapsulation body according to an embodiment of the invention.
Fig. 2 A-2C shows a series of processing procedure profiles of LED encapsulation body according to an embodiment of the invention.
Fig. 3 A-3E shows a series of processing procedure profiles of LED encapsulation body according to an embodiment of the invention.
Embodiment
Below will describe the making and the occupation mode of the embodiment of the invention in detail.Yet it should be noted, the invention provides many inventive concepts of supplying usefulness, it can multiple particular form be implemented.The specific embodiment of discussing of giving an example in the literary composition only is to make and use ad hoc fashion of the present invention, and is non-in order to limit the scope of the invention.In addition, in different embodiment, may use the label or the sign of repetition.These only repeat to have any association in order simply clearly to narrate the present invention, not represent between the different embodiment that discussed and/or the structure.Moreover, when address that one first material layer is positioned on one second material layer or on the time, comprise that first material layer directly contacts with second material layer or be separated with the situation of one or more other materials layers.
Figure 1A-1H shows a series of processing procedure profiles of LED encapsulation body according to an embodiment of the invention.Please refer to Figure 1A, the semiconductor-based end 100 is provided, it has first surface 100a and second surface 100b.The semiconductor-based end 100, can comprise semi-conducting material, for example silicon.In one embodiment, the semiconductor-based end 100, is preferably Silicon Wafer and is suitable for the carrying out of wafer-level packaging (wafer-level packaging).
Then, part removes the semiconductor-based end 100 to form at least one perforation (through-hole) and at least one heat radiation hole (heat dissipation hole).Shown in Figure 1A, at least one hole 102a and at least one heat radiation hole 104a form by partly removing the semiconductor-based end 100 from second surface 100b towards first surface 100a.In this embodiment, form a plurality of hole 102a and a plurality of heat radiation hole 104a simultaneously.For example, can carry out photoetching and etch process to form hole 102a and heat radiation hole 104a.In other embodiments, hole 102a and heat radiation hole 104a form respectively.The size of hole 102a can be greater than the size of heat radiation hole 104a, and the degree of depth of hole 102a can be greater than the degree of depth of heat radiation hole 104a.For example, when hole 102a and heat radiation hole 104a all had circular opening, the diameter of the opening of hole 102a was greater than the diameter of the opening of heat radiation hole 104a.
Please refer to Figure 1B, then form perforation 102 so that hole 102a exposes from the semiconductor-based end 100 of first surface 100a thinning.For example, can on the first surface 100a at the semiconductor-based end 100, grind (grinding) or cmp processing procedures such as (CMP) until the bottom that arrives or expose hole 102a.The semiconductor-based end 100, can be thinned to a predetermined thickness, look closely demand and decide.
Shown in Figure 1B, remove and the semiconductor-based end 100 of thinning by part, formed the first surface 100a and at least one perforation 102 of second surface 100b and the heat radiation hole 104a that extends towards first surface 100a from second surface 100b that pass the semiconductor-based end 100.In this embodiment, be formed with a plurality of perforation 102 and a plurality of heat radiation hole 104a.In other embodiments, perforation 102 can form in single etch process and not need the thinning processing procedure of substrate.In this case, perforation 102 and heat radiation hole 104a may define in different patterning process.Yet in other embodiments, perforation 102 and heat radiation hole 104a can form in identical etch process, and the size of its middle punch 102 can be greater than the size of heat radiation hole 104a.It should be noted that the shape of the opening of perforation 102 or heat radiation hole 104a can comprise any suitable shape, for example circle, rectangle or square or the like.
Please refer to Fig. 1 C, heat radiation hole 104a will be filled Heat Conduction Material (thermal conductive material) to form a plurality of heat radiation connectors (thermal vias).In this embodiment, Heat Conduction Material reaches subsequently the electric conducting material (it will be formed in the perforation 102) that forms is formed respectively.Therefore, before forming the heat radiation connector, can form at least one barrier structure (blocking structure) 105 and 102 cover boring a hole.In this embodiment, barrier structure 105 can partially or completely be filled perforation 102.Barrier structure 105 can include, but is not limited to patterning photoresist layer or its homologue.
Please refer to Fig. 1 D, then in heat radiation hole 104a, fill Heat Conduction Material to form a plurality of heat radiation connectors 106.Heat radiation connector 106 has the first end 106a of close first surface 100a and the second end 106b of close second surface 100b.Heat Conduction Material will be with so that will be packaged in the heat energy that is produced during the wafer running in the packaging body and derive.Heat Conduction Material can comprise any material of dispelling the heat, for example copper, silver, gold, aluminium, diamond, carbon nanomaterial (comprising carbon nano-tube or nano-pillar) or aforesaid combination.
In one embodiment, preferablely in heat radiation hole 104a, fill metal material, for example copper.For example, can carry out electroplating process in heat radiation hole 104a, to fill for example material such as copper or copper alloy.In certain embodiments, can before carrying out, electroplating process form crystal seed layer, adhesion coating or resilient coating etc.In some cases, based on the over-deposit of Heat Conduction Material, the second end 106b of the heat radiation connector 106 of being filled may have the lug boss away from second surface 100b.In this case, can the second end 106b planarization of the connector 106 that will dispel the heat for example can be adopted mechanical lapping or cmp processing procedure by grinding processing procedure.
Though the Heat Conduction Material that is shown among Fig. 1 D fills up heat radiation hole 104a fully, the execution mode of the embodiment of the invention is not limited to above-mentioned specific embodiment.In other embodiments, Heat Conduction Material can only partially filled heat radiation hole 104a.For example, Heat Conduction Material can only be formed on the sidewall of heat radiation hole 104a and the hole 104a that will not dispel the heat fills up fully, thereby forms the heat radiation connector 106 with hollow structure.
Please refer to Fig. 1 E, after forming heat radiation connector 106, barrier structure 105 is removed, and on the sidewall of perforation 102, form insulating barrier 108.The preferably, insulating barrier 108 forms under the temperature of the fusing point that is lower than Heat Conduction Material, thereby keeps the structural stability of heat radiation connector 106.For example, insulating barrier 108 can form by chemical vapour deposition technique.Insulating barrier 108 can include, but is not limited to silica, silicon nitride, silicon oxynitride or aforesaid combination.In the embodiment of Fig. 1 E, insulating barrier 108 further extends on the first surface 100a and second surface 100b at the semiconductor-based end 100.Be formed on all surfaces at the semiconductor-based end 100 to insulating barrier 108 compliances, and cover the second end 106b of heat radiation connector 106 fully.In one embodiment, insulating barrier 108 directly contacts with the second end 106b of heat radiation connector 106.Though the insulating barrier 108 that is shown in Fig. 1 E covers all surfaces at the semiconductor-based end 100 fully, in other embodiments, can with the semiconductor-based end 100 of insulating barrier 108 patternings with exposed portions serve.In another embodiment, can carry out extra patterning process removes insulating barrier 108 and the second end 106b of heat radiation connector 106 is exposed with part.In addition, in one embodiment, the insulating barrier 108 that is positioned on the second surface 100b at the semiconductor-based end 100 is a homogenous material layer.
Please refer to Fig. 1 F, then form conductive layer on the insulating barrier in perforation, wherein conductive layer is electrically insulated with the heat radiation connector.Please refer to Fig. 1 F, in order to form conductive layer, can be prior to forming crystal seed layer 110a on the insulating barrier 108 of boring a hole in 102.Crystal seed layer 110a can comprise any electric conducting material, for example copper.Crystal seed layer 110a can form by physical vaporous deposition.In the embodiment shown in Fig. 1 F, crystal seed layer 110a further extends on the first surface 100a and second surface 100b at the semiconductor-based end 100.Crystal seed layer 110a is in order to conducting electric current in follow-up electroplating process.Shown in Fig. 1 F, can on the crystal seed layer 110a of part, form cover layer 111 and in follow-up electroplating process, be deposited into the part that crystal seed layer 110a is capped to avoid metal material.In other embodiments, can form conductive layer by other deposition processs that are different from electroplating process.Therefore, can omit crystal seed layer.
Shown in Fig. 1 G, carry out electroplating process and form conductive layer 110 electric conducting material is deposited on the crystal seed layer 110a.Conductive layer 110 is formed on the insulating barrier 108 of perforation in 102.In the embodiment that is shown in Fig. 1 G, conductive layer 110 further extends on the first surface 100a and second surface 100b at the semiconductor-based end 100.For example, conductive layer 110 can further extend under the heat radiation connector 106.Because cover layer 111 covers the crystal seed layer 110a of part, electric conducting material is not deposited on the part that is capped.Then, removable cover layer 111.Can carry out etch process removing the crystal seed layer 110a that previous lining cap rock 111 is covered, thereby with conductive layer 110 patternings.In this embodiment, conductive layer 110 is electrically insulated with the Heat Conduction Material that is filled in the heat radiation connector 106 by insulating barrier 108.
In other embodiments, can be earlier with the insulating barrier 108 of crystal seed layer 110a patterning with exposed portions serve, and then cover layer 111 is formed on the part that insulating barrier 108 exposed.After electroplating out conductive layer 110, cover layer 111 is removed, thereby with conductive layer 110 patternings.
After forming conductive layer, on the first surface 100a at the semiconductor-based end 100 or second surface 100b, wafer is set.For example, wafer 112 is arranged on the first surface 100a at the semiconductor-based end 100, shown in Fig. 1 H.Wafer 112 has at least one electrode 112a.Electrode 112a is electrically connected to conductive layer 110.In the embodiment that is shown in Fig. 1 H, the electrode 112a and the conductive layer 110 of wafer 112 are electrically connected by bonding wire 114.In other embodiments, the electrode 112a of wafer 112 and conductive layer 110 can be electrically connected to each other by other conducting element, for example by circuit rerouting layer (redistribution layer).
Wafer 112 can include, but is not limited to LED wafer.When wafer 112 was LED wafer, it may produce a large amount of heat energy when running.Based on the formation of heat radiation connector, can reach the purpose of heat radiation.The characteristic of LED wafer is unlikely to worsen, and can obtain lifting the useful life of LED wafer.In addition, those skilled in the art can form many well known elements when understanding in wafer encapsulation body.For example, can form protective layer escapes injury with the protection wafer.
Fig. 2 A-2C shows a series of processing procedure profiles of LED encapsulation body according to an embodiment of the invention, and wherein same or analogous element will adopt same or analogous label.In this embodiment, Fu Jia insulating barrier is formed between heat radiation hole and the heat radiation connector.
Please refer to Fig. 2 A, the semiconductor-based end 100 is provided, it has first surface 100a and second surface 100b.In the semiconductor-based end 100, form at least one perforation 102 and at least one heat radiation hole 104a.Perforation 102 and heat radiation hole 104a can form by the method similar in appearance to the embodiment shown in Figure 1A-1H.
After defining heat radiation hole 104a, on the sidewall of heat radiation hole 104a, form insulating barrier.Shown in Fig. 2 A, insulating barrier 202 is formed on the sidewall of heat radiation hole 104a.In this embodiment, insulating barrier 202 extends much further into perforation 102, and covers the first surface 100a and the second surface 100b at the semiconductor-based end 100.Insulating barrier 202 can avoid the semiconductor-based end 100 to be subjected to the pollution of the heat radiation connector that will form subsequently.In one embodiment, insulating barrier 202 can form by the thermal oxidation processing procedure.In other embodiments, insulating barrier 202 can form by chemical vapour deposition (CVD).Insulating barrier 202 can for example comprise silica.
Please refer to Fig. 2 B, then form the heat radiation connector with method similar in appearance to Fig. 1 D illustrated embodiment.For example, carry out electroplating process and form at least one heat radiation connector 106 in heat radiation hole 104a, to fill Heat Conduction Material.In this embodiment, Heat Conduction Material also is an electric conducting material, for example is copper.In this embodiment, on the sidewall of perforation 102, form conductive layer, and conductive layer is inserted among the heat radiation hole 104a.Heat radiation connector 106 has the first end 106a of close first surface 100a and the second end 106b of close second surface 100b.Conductive layer covers the whole second surface 100b at the semiconductor-based end 100, and has the part 106c on low surface.
Please refer to Fig. 2 C, then with conductive layer patternization, thereby other parts 106c that part 110 that conductive layer extends into perforation 102 and conductive layer are extended on the second end 106b of heat radiation connector 106 is electrically insulated.In this embodiment, heat radiation connector 106 is further linked by the conductive layer part 106c of its below, further promotes the thermal diffusivity of packaging body.In other words, Heat Conduction Material (conductive layer of part) extends the second surface 100b at the semiconductor-based end 100 upward to link a plurality of heat radiation connectors.
Then, the wafer 112 that for example is LED wafer is arranged on the first surface 100a or second surface 100b at the semiconductor-based end 100, shown in Fig. 2 C.Wafer 112 has at least one electrode 112, and it is electrically connected to the conductive layer on the sidewall that extends perforation 102.
In the above-described embodiments, the heat radiation hole only partly passes at the semiconductor-based end with the heat radiation connector.Yet the embodiment of the invention is not limited to above-mentioned specific examples.In other embodiments, the heat radiation hole can pass completely through the semiconductor-based end with the heat radiation connector.
Fig. 3 A-3E shows a series of processing procedure profiles of LED encapsulation body according to an embodiment of the invention, and wherein same or analogous element will adopt same or analogous label to indicate.
Please refer to Fig. 3 A, the semiconductor-based end 100 is provided, it has first surface 100a and second surface 100b.In the semiconductor-based end 100, form at least one perforation 102 and at least one heat radiation hole 104a.Perforation 102 and heat radiation hole 104a can form by the method similar in appearance to the embodiment shown in Figure 1A-1H.
After defining heat radiation hole 104a, on the sidewall of heat radiation hole 104a, form insulating barrier.As shown in Figure 3A, insulating barrier 202 is formed on the sidewall of heat radiation hole 104a.In this embodiment, insulating barrier 202 extends much further into perforation 102, and covers the first surface 100a and the second surface 100b at the semiconductor-based end 100.Insulating barrier 202 can avoid the semiconductor-based end 100 to be subjected to the pollution of the heat radiation connector that will form subsequently.The material of insulating barrier 202 and generation type can be similar in appearance to the insulating barriers in Fig. 2 A illustrated embodiment.
Please refer to Fig. 3 B, form barrier structure 105 to cover perforation 102.In this embodiment, barrier structure 105 covers the first surface 100a at the semiconductor-based end 100, and complete filling perforation 102.Barrier structure 105 can include, but is not limited to patterning photoresist layer or its homologue.For example, patterning dry film (patterned dry film) can be used as barrier structure 105.
Shown in Fig. 3 B, then form the heat radiation connector with method similar in appearance to Fig. 1 D illustrated embodiment.For example, carry out electroplating process and form at least one heat radiation connector 106 in heat radiation hole 104a, to fill Heat Conduction Material.Heat radiation connector 106 has the first end 106a of close first surface 100a and the second end 106b of close second surface 100b.In this embodiment, the second end 106b of heat radiation connector 106 has the protuberance away from second surface 100b.
Please refer to Fig. 3 C, remove barrier structure 105, and the second end 106b of heat radiation connector 106 is ground processing procedure.After grinding processing procedure, the protuberance at the second end 106b place of heat radiation connector 106 and the insulating barrier 202 on the second surface 100b at the semiconductor-based end 100 are removed.Shown in Fig. 3 C because the insulating barrier 202 on the second surface 100b at the semiconductor-based end 100 also is removed during the grinding processing procedure of heat radiation connector 106, the second end 106b of heat radiation connector 106 on the whole with the second surface 100b at the semiconductor-based end 100 demifacet altogether.
Similar in appearance to the embodiment shown in Figure 1A-1F, can then on the sidewall of perforation 102, form patterned conductive layer to form conductive plunger (electrical via).Yet patterned conductive layer can further extend on the first surface 100a and second surface 100b at the semiconductor-based end 100 usually.Therefore, for fear of being short-circuited, should be before forming conductive layer, first surface 100a and second surface 100b in the semiconductor-based end 100 go up the formation insulating barrier.Particularly insulating barrier 202 may be removed during the grinding processing procedure of heat radiation connector 106 wholly or in part, therefore should form insulating barrier earlier.
Please refer to Fig. 3 D,, on the whole surface at the semiconductor-based end 100, form insulating barrier 108 (or claiming supplemental dielectric layer) by method similar in appearance to Fig. 1 E embodiment.Insulating barrier 108 is preferable to be formed by chemical vapour deposition (CVD).Insulating barrier 108 covers first surface 100a and second surface 100b, thereby makes the semiconductor-based end 100 and subsequently the conductive layer that forms is electrically insulated.In this embodiment, insulating barrier 108 covers the second end 106b of heat radiation connector 106 fully.Yet, in other embodiments, can carry out patterning process in addition and remove insulating barrier 108 and heat radiation connector 106 is exposed with part.In one embodiment, the insulating barrier on the first surface 100a at the perforation 102 and the semiconductor-based end 100 comprises the insulating barrier of multilayer.For example, in the embodiment of Fig. 3 D, the insulating barrier on the first surface 100a at the perforation 102 and the semiconductor-based end 100 comprises insulating barrier 202 and 108.
After forming insulating barrier 108, can carry out a succession of similar in appearance to the processing procedure shown in Fig. 1 F-1H forming patterned conductive layer 110, and on the first surface 100a at the semiconductor-based end 100 or second surface 100b, wafer 112 is set, shown in Fig. 3 E.In this embodiment, conductive layer 110 is formed on insulating barrier 202 and 108 simultaneously.The electrode 112a of wafer 112 is electrically connected to the conductive layer that extends in the perforation 102.In other embodiments, can partly remove insulating barrier 108 to define the opening of the second end 106b that exposes all or part of heat radiation connector 106.In another embodiment, can further on the heat radiation connector 106 that is exposed, form Heat Conduction Material.
The present invention is not subject to disclosed embodiment.For example, though the conductive layer that is formed in the perforation of discussing is the conforming materials layer, conductive layer of the invention process can be other forms.For example, conductive layer can fill up perforation fully, and tool is similar in appearance to the structure of heat radiation connector.
Based on the formation of heat radiation connector, the thermal diffusivity of the wafer encapsulation body of the embodiment of the invention can obtain lifting.Particularly, when packaged wafer is LED wafer, the characteristic of light-emitting diode will be unlikely to worsen, and can obtain lifting useful life.
The above only is preferred embodiment of the present invention; so it is not in order to limit scope of the present invention; any personnel that are familiar with this technology; without departing from the spirit and scope of the present invention; can do further improvement and variation on this basis, so the scope that claims were defined that protection scope of the present invention is worked as with the application is as the criterion.
Being simply described as follows of symbol in the accompanying drawing:
100: the semiconductor-based end
100a, 100b: surface
102: perforation
102a, 104a: hole
105: barrier structure
106: the heat radiation connector
106a, 106b: end
106c: part
108,202: insulating barrier
110: conductive layer
110a: crystal seed layer
111: cover layer
112: wafer
112a: electrode
114: bonding wire.
Claims (20)
1. a LED encapsulation body is characterized in that, comprising:
The semiconductor substrate has a first surface and a second surface;
This first surface and this second surface at this semiconductor-based end are passed at least one perforation;
At least one heat radiation hole, this second surface at this semiconductor-based end extends towards this first surface certainly;
One Heat Conduction Material is filled among this heat radiation hole to form a heat radiation connector, and wherein this heat radiation connector has one second end that reaches close this second surface near one first end of this first surface;
One insulating barrier is positioned on the sidewall of this perforation and extends on this first surface and this second surface at this semiconductor-based end, wherein this insulating barrier further cover this first end, this second end and this heat radiation connector a sidewall at least one of them;
One conductive layer is arranged on this insulating barrier of this perforation, and extends on this first surface and this second surface at this semiconductor-based end; And
One LED wafer is arranged on this first surface or this second surface at this semiconductor-based end, and has an electrode, and this electrode is electrically connected to this conductive layer.
2. LED encapsulation body according to claim 1 is characterized in that, a size of this perforation is greater than a size of this heat radiation hole.
3. LED encapsulation body according to claim 1 is characterized in that, this Heat Conduction Material fills up this heat radiation hole fully.
4. LED encapsulation body according to claim 1 is characterized in that, this Heat Conduction Material extends on this second surface at this semiconductor-based end to link a plurality of described heat radiation connectors.
5. LED encapsulation body according to claim 4 is characterized in that, this Heat Conduction Material is the part of this conductive layer.
6. LED encapsulation body according to claim 1 is characterized in that, this Heat Conduction Material and this conductive layer form respectively.
7. LED encapsulation body according to claim 6 is characterized in that this Heat Conduction Material is electrically insulated with this conductive layer by this insulating barrier.
8. LED encapsulation body according to claim 7 is characterized in that, this conductive layer further extends under this heat radiation connector.
9. LED encapsulation body according to claim 1 is characterized in that, this insulating barrier that is positioned on this second surface at this semiconductor-based end is a homogenous material layer.
10. LED encapsulation body according to claim 1 is characterized in that, this insulating barrier that is positioned on this first surface at this perforation and this semiconductor-based end comprises a plurality of material layers.
11. the formation method of a LED encapsulation body is characterized in that, comprising:
The semiconductor substrate is provided, has a first surface and a second surface;
This second surface from this semiconductor-based end forms at least one first hole and at least one second hole towards this first surface, and wherein the degree of depth of this first hole is greater than the degree of depth of this second hole;
Form a perforation from this semiconductor-based end of this first surface thinning to expose this first hole, wherein this second hole is as the hole that dispels the heat that extends towards this first surface from this second surface at this semiconductor-based end;
Fill a Heat Conduction Material to form a heat radiation connector in this heat radiation hole, wherein this heat radiation connector has near one first end of this first surface and one second end of close this second surface;
Form one first insulating barrier on a sidewall of this perforation, and extend on this first surface and this second surface at this semiconductor-based end, wherein this first insulating barrier further be covered in this first end, this second end and this heat radiation connector a sidewall at least one of them;
Form on a conductive layer this first insulating barrier in this perforation, and extend on this first surface and this second surface at this semiconductor-based end; And
One LED wafer is arranged on this first surface or this second surface at this semiconductor-based end, wherein this LED wafer has an electrode, and this electrode is electrically connected to this conductive layer.
12. the formation method of LED encapsulation body according to claim 11, it is characterized in that, the step that forms this first insulating barrier is to fill in this heat radiation hole this Heat Conduction Material carries out after forming this heat radiation connector, makes this first insulating barrier further cover this second end of this heat radiation connector.
13. the formation method of LED encapsulation body according to claim 12 is characterized in that, this Heat Conduction Material is electrically insulated with this conductive layer by this first insulating barrier on this second surface that extends in this semiconductor-based end.
14. the formation method of LED encapsulation body according to claim 11, it is characterized in that, the step that forms this first insulating barrier is to fill in this heat radiation hole this Heat Conduction Material carried out before forming this heat radiation connector, made this first insulating barrier further cover this sidewall of this first end and this heat radiation connector.
15. the formation method of LED encapsulation body according to claim 14 is characterized in that, this Heat Conduction Material and this conductive layer form simultaneously.
16. the formation method of LED encapsulation body according to claim 14 is characterized in that, also comprises:
After forming this first insulating barrier and the step of filling this Heat Conduction Material, this second surface grinds this semiconductor-based end and suprabasil this first insulating barrier of this semiconductor so that this second end of this heat radiation connector exposes certainly; And
Form a supplemental dielectric layer on this second end of this second surface at this first insulating barrier, this semiconductor-based end and this heat radiation connector.
17. the formation method of LED encapsulation body according to claim 16 is characterized in that, this conductive layer is formed on this first insulating barrier and this supplemental dielectric layer simultaneously.
18. the formation method of LED encapsulation body according to claim 11 is characterized in that, this first hole and this second hole form simultaneously.
19. the formation method of LED encapsulation body according to claim 11 is characterized in that, a size of this first hole is greater than a size of this second hole.
20. the formation method of LED encapsulation body according to claim 11 is characterized in that, also comprises:
Form a barrier structure to cover this perforation; And
After forming this heat radiation connector, remove this barrier structure.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US12/687,497 US8174044B2 (en) | 2010-01-14 | 2010-01-14 | Light emitting diode package and method for forming the same |
| US12/687,497 | 2010-01-14 |
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| CN102142509A true CN102142509A (en) | 2011-08-03 |
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| US (1) | US8174044B2 (en) |
| CN (1) | CN102142509B (en) |
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| CN106231780A (en) * | 2016-07-28 | 2016-12-14 | 广东欧珀移动通信有限公司 | Pcb board and there is its mobile terminal |
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| US8248803B2 (en) * | 2010-03-31 | 2012-08-21 | Hong Kong Applied Science and Technology Research Institute Company Limited | Semiconductor package and method of manufacturing the same |
| US8507940B2 (en) * | 2010-04-05 | 2013-08-13 | Taiwan Semiconductor Manufacturing Company, Ltd. | Heat dissipation by through silicon plugs |
| CN102916089B (en) | 2011-08-01 | 2015-03-25 | 赛恩倍吉科技顾问（深圳）有限公司 | Method for forming packaging structure of light emitting diode and method for forming base of packaging structure |
| DE102013101262A1 (en) * | 2013-02-08 | 2014-08-14 | Osram Opto Semiconductors Gmbh | Optoelectronic light module, optoelectronic light device and vehicle headlights |
| JP2017041558A (en) * | 2015-08-20 | 2017-02-23 | 大日本印刷株式会社 | Through electrode substrate and manufacturing method therefor |
| KR102561987B1 (en) * | 2017-01-11 | 2023-07-31 | 삼성전기주식회사 | Semiconductor package and manufacturing method for the same |
| TWI646679B (en) * | 2018-02-27 | 2019-01-01 | 欣興電子股份有限公司 | Pixel structure and method for manufacturing pixel structure |
| CN110197619B (en) * | 2018-02-27 | 2021-04-23 | 欣兴电子股份有限公司 | Pixel structure and method for manufacturing pixel structure |
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| US20090273005A1 (en) * | 2006-07-24 | 2009-11-05 | Hung-Yi Lin | Opto-electronic package structure having silicon-substrate and method of forming the same |
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| US20110169042A1 (en) | 2011-07-14 |
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| TW201125177A (en) | 2011-07-16 |
| US8174044B2 (en) | 2012-05-08 |
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