CN106670957A - Method for polishing ultrathin silicon ring - Google Patents
Method for polishing ultrathin silicon ring Download PDFInfo
- Publication number
- CN106670957A CN106670957A CN201510761529.XA CN201510761529A CN106670957A CN 106670957 A CN106670957 A CN 106670957A CN 201510761529 A CN201510761529 A CN 201510761529A CN 106670957 A CN106670957 A CN 106670957A
- Authority
- CN
- China
- Prior art keywords
- silicon ring
- polishing
- groove
- ultra
- silicon
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
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Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
- B24B37/07—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool
- B24B37/10—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool for single side lapping
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/27—Work carriers
- B24B37/30—Work carriers for single side lapping of plane surfaces
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02002—Preparing wafers
- H01L21/02005—Preparing bulk and homogeneous wafers
- H01L21/02008—Multistep processes
- H01L21/0201—Specific process step
- H01L21/02013—Grinding, lapping
Abstract
The invention discloses a method for polishing an ultrathin silicon ring. The method comprises the following steps of 1, manufacturing grooves which are slightly larger than the ultrathin silicon ring in size in a polishing head so that the silicon ring can be just clamped in the groove and exposed out of the surface of the polishing head after polishing cloth is attached to the inner diameter surfaces, the outer diameter surfaces and the bottom surfaces of the grooves; and 2, installing the polishing head on a polishing machine to polish the silicon ring, overturning the silicon ring after one side of the silicon ring is polished and then polishing the other side of the silicon ring to complete double-side polishing of the silicon ring. According to the method, the fragment probability of the ultrathin silicon ring in the polishing process can be effectively lowered, and the processing stability of the ultrathin silicon ring can be improved.
Description
Technical field
The present invention relates to a kind of finishing method of ultra-fine silicon ring, belongs to machining technology field.
Background technology
Typically when semiconductor integrated circuit is manufactured, the interlayer insulating film to being formed on silicon wafer is needed
(SiO2) perform etching technique.In order to perform etching to the silicon chip with insulating barrier, plasma etching is used
Device, as shown in Figure 1.In the plasma etching device, etching gas 1 are by being arranged at silicon electrode plate 2
Through pore is towards silicon chip 5 and applies high frequency voltage simultaneously, so as in plasma etching silicon electrode plate 2
Plasma 2 is generated and silicon chip 5 between, the plasma 2 acts on silicon chip 5, so as to realize to silicon chip
The etching of 5 surface insulation layers.In this process, silicon chip 5 is placed on slide holder 4.Due to technique or silicon chip
Difference, the structure of slide holder 4 is also different, is referred to as silicon ring.
In plasma etching silicon chip 5, carry the silicon ring 4 of silicon chip 5 also can be etched by plasma
Effect, if the surface of silicon ring 4 is present if damage, can produce various impurity, to be etched in etching process
The silicon chip 5 of erosion causes to stain, and affects the yield of final products, therefore it is polishing to generally require the surface of silicon ring
Surface.Silicon ring overall structure generally uses machining center and completes, afterwards using corrosion and chemically mechanical polishing side
Method obtains polished surface.But the silicon ring of part special construction is usually there will be, this kind of silicon circumpolar is thin, in stress
In the case of easily crush, therefore be difficult to be processed it using normal finishing method.
The content of the invention
It is an object of the invention to provide a kind of finishing method of ultra-fine silicon ring, to effectively reduce ultra-fine silicon ring
Fragment probability in polishing processing, improves the stability of ultra-fine silicon ring polishing.
For achieving the above object, the present invention is employed the following technical solutions：
A kind of finishing method of ultra-fine silicon ring, the method is comprised the following steps：(1) make on rubbing head and omit
More than the groove of ultra-fine silicon ring size so that after groove internal-and external diameter surface and groove floor attach polishing cloth,
Silicon ring is stuck in groove just, and silicon ring exposes polishing head surface；(2) rubbing head is arranged on polishing machine,
Silicon ring is polished, after the completion of a mirror polish, silicon ring turn-over is polished to silicon ring another side, from
And complete the twin polishing to silicon ring and process.
Wherein, after bottom attaches polishing cloth, its depth is more than the 1/2 of silicon ring thickness to the groove, less than silicon
Ring thickness deducts the numerical value obtained by polishing removal amount.
In the step (2), polishing process includes polishing fluid polishing and water throwing photoreduction process..
It is an advantage of the current invention that：
In the present invention, silicon ring is stuck in the groove slightly larger than its size, substantially reduces silicon ring in polishing
During the shearing force that is subject to, so as to reduce its broken probability, improve the stability of polishing.
Description of the drawings
Fig. 1 is plasma etching schematic device.
Fig. 2 is the structure of the rubbing head after present invention processing.
Specific embodiment
Below in conjunction with the accompanying drawings the present invention will be further described, but embodiments of the present invention not limited to this.
As shown in Fig. 2 making the groove 8 slightly larger than the ultra-fine size of silicon ring 7 on rubbing head 6 so that recessed
Groove internal-and external diameter surface and groove floor are attached after polishing cloth, and silicon ring is stuck in groove just, and silicon ring exposes throwing
Light head surface.When being polished to silicon ring, rubbing head is arranged on rocking arm polishing machine or other polishing machines,
Silicon ring is polished, after the completion of a mirror polish, silicon ring turn-over is polished to silicon ring another side, from
And complete the twin polishing to silicon ring and process.
Embodiment 1
The ultra-fine silicon ring internal diameter processed in the present embodiment is 296mm, and external diameter is 308mm, and thickness is 3.6mm.
The width of the silicon ring is only 6mm, and fragment probability is high in normal polishing process.
By the method for the present invention, the groove slightly larger than silicon ring size is made on rubbing head, external diameter is
309.3mm, internal diameter is 294.7mm, and depth is 3mm.The polishing cloth attached in groove is SUBA800,
Its thickness is about 1.3mm.Ultra-fine silicon ring is processed using the method, Continuous maching 10 is sent out without fragment
It is raw, and silicon ring surface is intact after polishing.
It can be seen that the present invention can effectively reduce fragment probability of the ultra-fine silicon ring in polishing process, polishing process is improved
Stability.
Claims (3)
1. a kind of finishing method of ultra-fine silicon ring, it is characterised in that the method is comprised the following steps：(1)
The groove slightly larger than ultra-fine silicon ring size is made on rubbing head so that in groove internal-and external diameter surface and groove-bottom
Face is attached after polishing cloth, and silicon ring is stuck in groove just, and silicon ring exposes polishing head surface；(2) will polishing
Head is arranged on polishing machine, silicon ring is polished, after the completion of a mirror polish, by silicon ring turn-over, to silicon ring
Another side is polished, and processes so as to complete the twin polishing to silicon ring.
2. the finishing method of ultra-fine silicon ring according to claim 1, it is characterised in that the groove exists
Bottom is attached after polishing cloth, and its depth deducts polishing removal amount more than the 1/2 of silicon ring thickness less than silicon ring thickness
Resulting numerical value.
3. the finishing method of ultra-fine silicon ring according to claim 1, it is characterised in that in the step
(2) in, polishing process includes polishing fluid polishing and water throwing photoreduction process.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510761529.XA CN106670957A (en) | 2015-11-10 | 2015-11-10 | Method for polishing ultrathin silicon ring |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510761529.XA CN106670957A (en) | 2015-11-10 | 2015-11-10 | Method for polishing ultrathin silicon ring |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN106670957A true CN106670957A (en) | 2017-05-17 |
Family
ID=58863735
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201510761529.XA Pending CN106670957A (en) | 2015-11-10 | 2015-11-10 | Method for polishing ultrathin silicon ring |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN106670957A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114800222A (en) * | 2022-05-13 | 2022-07-29 | 中锗科技有限公司 | Method for polishing two sides of germanium wafer |
Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE2808919A1 (en) * | 1978-03-02 | 1979-09-06 | Goetze Ag | Sintered sealing ring contact face shaping - uses alternately rotating embossing system to form grooves on contact face |
| JPH06238559A (en) * | 1992-04-24 | 1994-08-30 | Shin Etsu Chem Co Ltd | Single-sided surface polishing |
| CN102152195A (en) * | 2010-01-26 | 2011-08-17 | 本田技研工业株式会社 | Grinding method for metal ring |
| CN103029037A (en) * | 2012-12-03 | 2013-04-10 | 大连理工大学 | Sealing ring machining pre-deformation force loading clamp and loading method |
| CN203141170U (en) * | 2013-03-28 | 2013-08-21 | 莱芜钢铁集团有限公司 | Tool for machining thin-wall check ring |
| CN103317414A (en) * | 2013-06-28 | 2013-09-25 | 林全忠 | Grinding device and grinding method for oil scraping rings |
| CN203401398U (en) * | 2013-08-31 | 2014-01-22 | 莱州市蔚仪试验器械制造有限公司 | Central compression holder of metallographic sample grinding and burnishing machine |
| CN104057379A (en) * | 2014-07-09 | 2014-09-24 | 江苏神马电力股份有限公司 | Sealing ring trimmer |
| CN104139329A (en) * | 2013-12-05 | 2014-11-12 | 柳州易舟汽车空调有限公司 | Cross-shaped slip ring grinding method |
-
2015
- 2015-11-10 CN CN201510761529.XA patent/CN106670957A/en active Pending
Patent Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE2808919A1 (en) * | 1978-03-02 | 1979-09-06 | Goetze Ag | Sintered sealing ring contact face shaping - uses alternately rotating embossing system to form grooves on contact face |
| JPH06238559A (en) * | 1992-04-24 | 1994-08-30 | Shin Etsu Chem Co Ltd | Single-sided surface polishing |
| CN102152195A (en) * | 2010-01-26 | 2011-08-17 | 本田技研工业株式会社 | Grinding method for metal ring |
| CN103029037A (en) * | 2012-12-03 | 2013-04-10 | 大连理工大学 | Sealing ring machining pre-deformation force loading clamp and loading method |
| CN203141170U (en) * | 2013-03-28 | 2013-08-21 | 莱芜钢铁集团有限公司 | Tool for machining thin-wall check ring |
| CN103317414A (en) * | 2013-06-28 | 2013-09-25 | 林全忠 | Grinding device and grinding method for oil scraping rings |
| CN203401398U (en) * | 2013-08-31 | 2014-01-22 | 莱州市蔚仪试验器械制造有限公司 | Central compression holder of metallographic sample grinding and burnishing machine |
| CN104139329A (en) * | 2013-12-05 | 2014-11-12 | 柳州易舟汽车空调有限公司 | Cross-shaped slip ring grinding method |
| CN104057379A (en) * | 2014-07-09 | 2014-09-24 | 江苏神马电力股份有限公司 | Sealing ring trimmer |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114800222A (en) * | 2022-05-13 | 2022-07-29 | 中锗科技有限公司 | Method for polishing two sides of germanium wafer |
| CN114800222B (en) * | 2022-05-13 | 2023-09-26 | 中锗科技有限公司 | Double-sided polishing method for germanium wafer |
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| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20170517 |
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| RJ01 | Rejection of invention patent application after publication |