CN104658976A - Dividing method and dividing apparatus for wafer laminated body - Google Patents
Dividing method and dividing apparatus for wafer laminated body Download PDFInfo
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- CN104658976A CN104658976A CN201410525155.7A CN201410525155A CN104658976A CN 104658976 A CN104658976 A CN 104658976A CN 201410525155 A CN201410525155 A CN 201410525155A CN 104658976 A CN104658976 A CN 104658976A
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- 238000000034 method Methods 0.000 title claims abstract description 24
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 67
- 239000010703 silicon Substances 0.000 claims abstract description 67
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 57
- 239000011521 glass Substances 0.000 claims abstract description 55
- 229910003460 diamond Inorganic materials 0.000 claims abstract description 16
- 239000010432 diamond Substances 0.000 claims abstract description 16
- 239000011347 resin Substances 0.000 claims abstract description 11
- 229920005989 resin Polymers 0.000 claims abstract description 11
- 238000003825 pressing Methods 0.000 claims description 29
- 230000001678 irradiating effect Effects 0.000 claims description 14
- 150000003376 silicon Chemical class 0.000 claims description 10
- 238000002679 ablation Methods 0.000 claims description 9
- 230000000694 effects Effects 0.000 abstract description 5
- 238000005530 etching Methods 0.000 abstract 3
- 235000012431 wafers Nutrition 0.000 description 119
- 238000005520 cutting process Methods 0.000 description 19
- 238000004806 packaging method and process Methods 0.000 description 13
- 230000007246 mechanism Effects 0.000 description 10
- 239000002173 cutting fluid Substances 0.000 description 9
- 239000000463 material Substances 0.000 description 6
- 239000002184 metal Substances 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 4
- 238000000059 patterning Methods 0.000 description 4
- 238000003466 welding Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 238000011084 recovery Methods 0.000 description 3
- 238000004140 cleaning Methods 0.000 description 2
- 239000000470 constituent Substances 0.000 description 2
- 238000002425 crystallisation Methods 0.000 description 2
- 230000008025 crystallization Effects 0.000 description 2
- 238000001035 drying Methods 0.000 description 2
- 230000003028 elevating effect Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 2
- 238000005476 soldering Methods 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 238000005299 abrasion Methods 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
- H01L27/14687—Wafer level processing
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1876—Particular processes or apparatus for batch treatment of the devices
Abstract
The invention provides a dividing method and dividing apparatus for a wafer laminated body which can analyze well an image sensor wafer without a dicing saw, in a simple dry way and with perfect effect. In the dividing method for an image sensor wafer laminated body (W), a glass wafer (1) and a silicon wafer (2) are configured to surround a resin layer (4) of each photodiode forming region (3); an etching wheel (10) presses and moves along a breaking predetermined line on the glass wafer (1), or a diamond sharp point moves relatively to form an etching line (S1); and then, laser irradiates along the breaking predetermined line on the external surface of the silicon wafer (2) to form an ablative groove (S2) on the external surface of the silicon wafer (2); furtherly, for example, a component (14) is pressed along the etching line on the external surface of the glass wafer (1) or the silicon wafer (2), allowing a wafer laminated body (W) to flexure to separate the glass wafer (1) and the silicon wafer (2).
Description
Technical field
The invention relates to a kind of method for dividing and break-up device of wafer laminate, more specifically, be method for dividing and the break-up device thereof carrying out singualtion about a kind of wafer laminate of the wafer-level packaging body (WaferLevel Package) for being formed with CMOS image sensor to patterning.
Background technology
In recent years, in the various miniature electric field of machines such as mobile phone, digital camera, optical mouse paying attention to low electric power, high function, Gao Jitiization, the use of CMOS image sensor increases sharply.
Fig. 8 is the profile of wafer-level packaging body (unit article of chip size) the W1 configuration example diagrammatically representing CMOS image sensor.Wafer-level packaging body W1, has (through singualtion) glass wafer 1 and (through singualtion) Silicon Wafer 2 and clips the lamination that resin next door 4 engages and construct.
On Silicon Wafer 2, (side, composition surface) is formed with photodiode (photodiode) (sensing region) 3, resin next door 4 with in lattice shape around mode be configured at around it, make the inner space being provided with photodiode forming region 3 become airtight conditions whereby.Further, on (outside photodiode forming region 3) Silicon Wafer 2, be formed with metal gasket 5, immediately below the part being formed with this metal gasket 5, be formed with the through hole (through hole) 6 of up/down perforation Silicon Wafer 2.Fill the good conduction material 7 of electrical conductivity at through hole 6, be formed with welding (welding) projection 8 in through hole 6 lower end.So, through hole 6 and filled conductive material 7 will be formed thus the formation of carrying out being electrically connected is called TSV (straight-through silicon wafer perforation (Through Silicon Via)).
In addition, below above-mentioned soldering projection 8, index map patterning has the PCB substrate etc. of set electric circuit.
The unit article of chip size and wafer-level packaging body W1, as shown in Fig. 8 ~ Figure 10, on the wafer laminate W that engages across resin next door 4 at the large-area glass wafer 1 becoming parent and bulk silicon wafer 2, clathrate is distinguished into and patterning is formed multiple with the disjunction preset lines L extended in X-Y direction, by along this wafer laminate of this disjunction preset lines L disjunction W, and become the wafer-level packaging body W1 of (through singualtion) chip size.
But, become at disjunction Silicon Wafer in the processing of wafer-level packaging system product, comprise CMOS image sensor, existing known be use cast-cutting saw as shown in patent documentation 1 ~ patent documentation 4.Cast-cutting saw, possesses the rotating blade of High Rotation Speed, and is configured to spray cutting fluid while cut to rotating blade, this cutting fluid be for rotating blade cooling and clean the cutting swarf that produces when cutting.
Patent documentation 1: Japanese Unexamined Patent Publication 5-090403 publication
Patent documentation 2: Japanese Unexamined Patent Publication 6-244279 publication
Patent documentation 3: Japanese Unexamined Patent Publication 2002-224929 publication
Patent documentation 4: Japanese Unexamined Patent Publication 2003-051464 publication
Above-mentioned cast-cutting saw, use the utilization of rotating blade to cut to carry out disjunction, therefore cutting swarf is produced in a large number, even if utilize cutting fluid to clean, also the part having a cutting fluid remain or cutting swarf because of dispersing and be attached to the situation on packaging body surface when cutting, and become the maximum reason that quality or yield reduce.In addition, owing to must have for the supply of cutting fluid or the mechanism of devil liquor recovery or pipe arrangement, device is therefore made to become huge.In addition, owing to being by cutting disjunction wafer, the situation therefore producing little chip (chipping) (breach) in cutting face is many, and cannot obtain perfectly point section.In addition, because the sword of the rotating blade of High Rotation Speed is anterior, be with zigzag or the concavo-convex formation of continuous print, therefore easily produce the abrasion or damaged and useful life is short of sword front portion.Further, because the thickness of rotating blade cannot become very thin from the viewpoint of intensity, even path person also forms the thickness of more than 60 μm, therefore having cutting width must degree and also become the first-class problem points of the essential factor that limiting material effectively utilizes for this reason.
Summary of the invention
Therefore, the present invention seeks the solution of above-mentioned existing known problem, and object is to provide one not use cast-cutting saw, and ideally carries out method for dividing and the device thereof of the image sensor wafer level packaging body of disjunction with the simple means tool effect of dry type ground.
The object of the invention to solve the technical problems realizes by the following technical solutions.According to the method for dividing that the present invention proposes, it is the method for dividing of the wafer laminate with the structure that glass wafer and Silicon Wafer are fitted across resin bed, have: glass scribing steps, by sword front end, the disjunction preset lines along this glass wafer outer surface forms score line; And silicon trench forming step, by the disjunction preset lines irradiating laser of the outer surface along this Silicon Wafer, and form the groove of ablation (ablation) at the outer surface of Silicon Wafer; After this glass scribing steps and silicon trench forming step, have: disjunction step, along each score line or this glass wafer of groove disjunction and Silicon Wafer.
The object of the invention to solve the technical problems also can be applied to the following technical measures to achieve further.
Herein, this wafer laminate can be image sensor wafer laminate, also can be this Silicon Wafer and can be that pattern is in length and breadth formed with the Silicon Wafer of multiple photodiode forming region, this resin bed can be with the wafer laminate configured around the mode of this each photodiode forming region.
In addition, this image sensor wafer laminate, can be CMOS image sensor wafer laminate, also can be formed with straight-through silicon wafer perforation (TSV) at this wafer laminate.
In addition, this sword front end, can be circumferentially crest line and has the scribe wheel of sword front portion or also can be diamond cusp (diamond point) (being also called diamond cusp cutter).
By while by the sword of scribe wheel front portion press on glass wafer outer surface, while make scribe wheel rotate along disjunction preset lines, or by while the sword front portion (protuberance (summit) or crest line) of diamond cusp is pressed on glass wafer outer surface, while make diamond cusp and glass wafer along the relative movement of disjunction preset lines, and can along glass wafer outer surface disjunction preset lines formed score line.
This disjunction step, can be by pressing with pressing member from the outer surface side of this glass wafer along this score line or pressing with pressing member along this groove from the outer surface side of this Silicon Wafer, and this glass wafer and Silicon Wafer are carried out the step of disjunction along each score line or groove.
Herein, pressing member, though can press from the outer surface side of glass wafer, also can press from the outer surface side of Silicon Wafer, but generally speaking have the tendency being difficult to disjunction glass wafer side, in addition, the groove being formed at Silicon Wafer outer surface has width to a certain degree, therefore, when pressing from outer surface side, being preferably and pressing from the outer surface side of Silicon Wafer, is the tendency owing to having easily disjunction well relatively compared to the be full of cracks of score line.
In addition, which is first carried out for glass scribing steps and silicon trench step, but especially in disjunction step to the situation that the outer surface of Silicon Wafer presses with pressing member, from viewpoints such as the reversions of wafer laminate, be preferably glass scribing steps and first carry out.
In addition, the break-up device of the wafer laminate of the present invention completed according to other viewpoints, possess to the outer surface of this glass wafer formed score line sword front end, formed by the disjunction preset lines irradiating laser along this Silicon Wafer outer surface at the outer surface of Silicon Wafer the groove of ablation laser irradiating part and along each score line or groove, the disjunction means of disjunction are carried out to this glass wafer and Silicon Wafer.
Herein, this sword front end, can be scribe wheel or diamond cusp that circumferentially crest line has sword front portion, these disjunction means, can be the pressing member carrying out from the outer surface side of this glass wafer or the outer surface side of Silicon Wafer along this score line or groove pressing.
By technique scheme, method for dividing and the break-up device of wafer laminate of the present invention at least have following advantage and beneficial effect:
In the present invention, be normally used as the scribe wheel of sword front end, that circumferentially crest line forms groove or breach and remaining crest line (projection) becomes the scribe wheel of sword front portion, also can be the scribe wheel that the impregnability of the intrusion toward glass wafer and/or the past glass wafer thickness direction of be full of cracks (vertical crack) along score line formation is good, in addition, also can be circumferentially crest line and do not form the general scribe wheel of groove and breach.This scribe wheel, relative to the angle (sword toe angle) of the anterior front end of the sword in the section of circumference crest line vertical direction, is preferably such as 95 degree ~ 155 degree.
On the other hand, use the situation of diamond cusp in the present invention, can use to be formed becomes the protuberance of sword front portion or the single crystal diamond of crest line or many crystallizations diamond.In addition, from the laser that laser irradiating part irradiates, the UV laser of wavelength 1064nm or the green laser (greenlaser) of wavelength 532nm is preferably.By irradiation laser so, the groove of ablation can be formed well at Silicon Wafer outer surface.
In the present invention, by irradiating laser at the groove of the ablation of Silicon Wafer outer surface formation, generally speaking, can be: width is such as less than 20 μm, be preferably 1 μm ~ about 10 μm, the degree of depth is such as less than 20 μm, is preferably 1 μm ~ about 10 μm.Groove due to ablation has set width, therefore, the impact that the crystallization direction of Silicon Wafer produces is less, in addition, in the disjunction step of carrying out pressing with pressing member, pressing direction (pressing from outer surface side or the pressing from the rear side) impact that produces is less, can disjunction Silicon Wafer well.
According to the present invention, such as, owing to being the pressing by pressing member, edge is made to be formed at the be full of cracks of the score line stretching, extension of glass wafer outer surface and to soak into (stretching, extension) from the be full of cracks that the groove being formed at Silicon Wafer outer surface stretches toward thickness direction and carry out disjunction, therefore without the need to the such as existing known larger cutting width of carrying out the situation of cutting by the cast-cutting saw with thickness, and effectively can utilize material, and can suppress as cut the generations such as the chip of situation or chip, can with perfect section and yield carries out disjunction goodly.
Especially in the present invention, cutting fluid is used without the need to such as existing known cast-cutting saw, but disjunction is carried out under dry environment, therefore can omit for the supply of cutting fluid or the mechanism of devil liquor recovery or pipe arrangement, and also can omit cleaning or drying steps and can constituent apparatus fine after cut-out.In addition, sword front end (scribe wheel or diamond cusp) used in the present invention, especially circumferentially crest line has sword front portion and carries out the scribe wheel of rotating in use, ruin compared with the easy existing known rotating blades produced such as (tooth are blunt) with tooth, its useful life is longer, therefore has the effect that can suppress operating cost (runningcost).
Above-mentioned explanation is only the general introduction of technical solution of the present invention, in order to technological means of the present invention can be better understood, and can be implemented according to the content of specification, and can become apparent to allow above and other object of the present invention, feature and advantage, below especially exemplified by preferred embodiment, and coordinate accompanying drawing, be described in detail as follows.
Accompanying drawing explanation
Fig. 1 is the graphic of the 1st stage representing method for dividing of the present invention.
Fig. 2 is the graphic of the 2nd stage representing method for dividing of the present invention.
Fig. 3 is the graphic of the 3rd stage representing method for dividing of the present invention.
Fig. 4 is the graphic of other embodiments representing Fig. 3.
Fig. 5 is represent used in one embodiment of this invention scribe wheel graphic.
Fig. 6 represents the scribe wheel of Fig. 5 to be installed on the graphic of the state of holder.
Fig. 7 is the front view of the outline of delineation mechanism used in the present invention.
Fig. 8 is the profile of an example of the wafer-level packaging body representing CMOS image sensor.
Fig. 9 is the profile of the part representing the CMOS image sensor wafer laminate becoming mother metal.
Figure 10 is the vertical view schematically of the CMOS image sensor wafer laminate of Fig. 8.
[main element symbol description]
A: delineation mechanism S1: the score line of glass wafer
S2: the groove W of Silicon Wafer: wafer laminate
W1: wafer-level packaging body 1: glass wafer
2: Silicon Wafer 10: scribe wheel
10a: sword front portion 14: pressing member
15: platform 25 laser irradiating part
Embodiment
For further setting forth the present invention for the technological means reaching predetermined goal of the invention and take and effect, below in conjunction with accompanying drawing and preferred embodiment, to method for dividing and its embodiment of break-up device, method, step, feature and effect thereof of the wafer laminate proposed according to the present invention, be described in detail as follows.
Below, according to the graphic method for dividing explaining the image sensor wafer laminate of one embodiment of the invention.
Fig. 1 is the 1st stage of method for dividing of the present invention, namely represents a part of section becoming the CMOS image sensor wafer laminate W of processing object.The structure of wafer laminate W, substantially with above-mentioned Fig. 8 ~ Figure 10 shows that same configuration.
That is, become the glass wafer 1 of the large area (such as diameter is 8 inches (inch)) of parent, engage across cancellate resin next door 4 with the Silicon Wafer 2 being configured at its following side.
On Silicon Wafer 2, (side, composition surface) is provided with photodiode forming region (sensing region) 3.Be formed with photodiode array in photodiode forming region 3, play function using the sensitive surface as image sensor.And, near photodiode forming region 3, be formed with metal gasket 5, immediately below the part being formed with this metal gasket 5, be formed with the through hole (through hole) 6 of up/down perforation Silicon Wafer 2.Fill electrical conductivity good conduction material 7 (TSV) at through hole 6, be formed with welding (welding) projection 8 in through hole 6 lower end.In addition, below above-mentioned soldering projection 8, engage by (omitting diagram) such as the PCB substrate of set electric circuit patterning.
This CMOS image sensor wafer laminate W, as shown in Figure 10 by the singualtion along the clathrate disjunction preset lines L disjunction extended in X-Y direction, to take out unit article and the wafer-level packaging body W1 of chip size.
Then be described for disjunction processing sequence.When carrying out disjunction along the disjunction preset lines L of Figure 10 to wafer laminate W, first, the Surface Machining score line S1 of scribe wheel 10 pairs of glass wafers 1 is as shown in Figure 5 used.
Scribe wheel 10, is formed with the material that the tool characteristics such as superhard alloy or sintering diamond are good, is formed with the anterior 10a of sword at circumference crest line (outer peripheral face).Specifically, be preferably: use diameter is 1mm ~ 6mm, is preferably 1.5mm ~ 4mm, and sword toe angle is 85 degree ~ 150 degree, is preferably 105 degree ~ 140 degree, but suitably can select according to the thickness of processed glass wafer 1 or kind.
This scribe wheel 10, in being rotatably supported at holder 11, is installed on the engraving head 24 (with reference to Fig. 7) of delineation mechanism A by elevating mechanism 12.
In the present invention, as sword front end, also can replace the scribe wheel 10 of carrying out in use rotating (rotating passively), and use fixed blade and diamond cusp.
Delineation mechanism A, has and loads and keep the platform 15 of wafer laminate W.Platform 15, becomes and along (fore-and-aft direction of Fig. 7) movement in the Y direction of the rail bar 17 of level, can drive by the screw shaft 18 utilizing motor (omitting diagram) to carry out rotating.Further, platform 15, becoming can the turn in horizontal plane by the rotary driving part 19 of built-in motor.
Have the bridge portion 22 clipping the both sides supporting pillar 20,20 of platform 15 setting and the beam (crossbeam) 21 at X-direction horizontal-extending, be arranged to cross on platform 15.At beam 21, be provided with the guide member 23 at X-direction horizontal-extending, at this guide member 23, the engraving head 24 having above-mentioned scribe wheel 10 be mounted to move in X-direction along beam 21 by motor M.
In addition, at engraving head 24, the laser irradiating part 25 of irradiating laser is also installed.
On the platform 15 of above-mentioned delineation mechanism A, as shown in Figure 1, to make glass wafer 1 towards upper state mounting wafer laminate W, rotate by the outer surface one edge disjunction preset lines pressing making scribe wheel 10 at glass wafer 1, and form score line S1 at glass wafer 1.In addition, score line S1 is formed at the outside in the resin next door 4 of wafer-level packaging body W1.
Then, as the 2nd stage, as shown in Figure 2 wafer laminate W is reversed, make the laser focusing from laser irradiating part 25 and disjunction preset lines along Silicon Wafer 2 outer surface is irradiated.Irradiate the ablation produced by this laser, and form the fine groove S2 of the hierarchy structure of several μm (1 μm ~ 10 μm) left and right at the outer surface of Silicon Wafer 2.
From the laser that laser irradiating part 25 irradiates, the UV laser or the wavelength that are preferably wavelength 1062nm are the green laser etc. of 532nm.
Then, as the 3rd stage, as shown in Figure 3, the outer surface of the glass wafer 1 on the downside of becoming, configure the pair of right and left pedestal 13,13 extended along its both sides in the mode clipping score line S1, press with pressing member 14 towards groove S2 from Silicon Wafer 2 outer surface becoming upside.In the present embodiment, though employ the brisement bar of long strip-board shape as this pressing member 14, also can replace this and be formed to press the roller rotated.As the brisement bar of pressing member 14, be formed as the oscilaltion by the elevating mechanisms such as fluid cylinder (omitting diagram).
Press by with this pressing member 14, glass wafer 1 and Silicon Wafer 2 bend toward with pressing opposition side, direction, the be full of cracks of carrying out along the score line S1 of the glass wafer 1 and groove S2 of Silicon Wafer 2 from the be full of cracks of glass wafer 1 and the groove of Silicon Wafer 2 stretching is soaked into and disjunction toward thickness direction, divides the wafer-level packaging body W1 of cracked ends singualtion whereby along disjunction preset lines completely.
By in the disjunction of this flexure, by the mode disjunction that glass wafer 1 and Silicon Wafer 2 soak into toward thickness direction from each score line S1, groove S2 be full of cracks, therefore without the need to the cutting width of the such as situation of the cut of existing known cast-cutting saw, and effectively can utilize material, and the chip as situation as cut or the generation such as chip can be suppressed, and can with perfect section and yield carries out disjunction goodly.
In addition, use cutting fluid without the need to such as existing known cast-cutting saw in the present invention, but carry out disjunction under dry environment, therefore can omit for the supply of cutting fluid or the mechanism of devil liquor recovery or pipe arrangement, and also can omit cleaning or drying steps after cut-out, can constituent apparatus fine.Further, sword front end (scribe wheel or diamond cusp) used in the present invention, especially circumferentially crest line has the anterior 10a of sword and carries out the scribe wheel 10 of rotating in use, ruin compared with the easy existing known rotating blades produced such as (tooth are blunt) with tooth, its useful life is longer, therefore, it is possible to be suppressed to by operating cost lower.
In the present invention, carry out brisement utilizing pressing member 14 and add man-hour, also the pair of right and left pedestal 13,13 of bearing glass wafer 1 can be replaced, and as shown in Figure 4, to there is the fender 16 of the thickness of glass wafer 1 degree of flexibility that can cave in, be configured to connect with the score line S1 forming surface of glass wafer 1.
Though be illustrated for representational embodiment of the present invention above, the present invention is not specific for the above embodiments.Such as, in the above-described embodiments, though make scribe wheel 10 and laser irradiating part 25 remain on common engraving head 24, also can be configured to make each remain on different engraving heads.
In addition, in the present invention, can reaching its object, do not depart from the scope of application range and suitably revise, change.
Method for dividing of the present invention, can utilize the disjunction at the wafer laminate being fitted with glass wafer and Silicon Wafer.
The above, it is only preferred embodiment of the present invention, not any pro forma restriction is done to the present invention, although the present invention discloses as above with preferred embodiment, but and be not used to limit the present invention, any those skilled in the art, do not departing within the scope of technical solution of the present invention, make a little change when the technology contents of above-mentioned announcement can be utilized or be modified to the Equivalent embodiments of equivalent variations, in every case be the content not departing from technical solution of the present invention, according to any simple modification that technical spirit of the present invention is done above embodiment, equivalent variations and modification, all still belong in the scope of technical solution of the present invention.
Claims (8)
1. a method for dividing for wafer laminate, this wafer laminate has the structure of glass wafer and Silicon Wafer being fitted across resin bed, it is characterized in that having:
Glass scribing steps, by sword front end, the disjunction preset lines along this glass wafer outer surface forms score line; And
Silicon trench forming step, by the disjunction preset lines irradiating laser along this Silicon Wafer outer surface, and forms the groove of ablation at this Silicon Wafer outer surface;
After this glass scribing steps and silicon trench forming step, have:
Disjunction step, along each score line or this glass wafer of groove disjunction and Silicon Wafer.
2. the method for dividing of wafer laminate as claimed in claim 1, is characterized in that, wherein,
This wafer laminate is image sensor wafer laminate, and this Silicon Wafer is that pattern is formed with the Silicon Wafer of multiple photodiode forming region in length and breadth, and this resin bed is to configure around the mode of this each photodiode forming region.
3. the method for dividing of wafer laminate as claimed in claim 2, is characterized in that, wherein,
This image sensor wafer laminate is CMOS image sensor wafer laminate, and is formed with the perforation of straight-through silicon wafer at this wafer laminate.
4. the method for dividing of wafer laminate as claimed in claim 1, is characterized in that, wherein,
This sword front end is that circumferentially crest line has scribe wheel or the diamond cusp of sword front portion.
5. the method for dividing of wafer laminate according to any one of Claims 1-4, it is characterized in that, wherein, this disjunction step, be press with pressing member from the outer surface side of this glass wafer along this score line or press with pressing member along this groove from the outer surface side of this Silicon Wafer, whereby this glass wafer and Silicon Wafer carried out the step of disjunction along each score line or groove.
6. a break-up device for wafer laminate, this wafer laminate has the structure of glass wafer and Silicon Wafer being fitted across resin bed, it is characterized in that, have:
Sword front end, forms score line to the outer surface of this glass wafer;
Laser irradiating part, by the disjunction preset lines irradiating laser along this Silicon Wafer outer surface, and forms the groove of ablation at the outer surface of this Silicon Wafer; And
Disjunction means, carry out disjunction to this glass wafer and Silicon Wafer along each score line or groove.
7. the break-up device of wafer laminate as claimed in claim 6, is characterized in that, wherein,
This sword front end is that circumferentially crest line has scribe wheel or the diamond cusp of sword front portion.
8. the break-up device of wafer laminate as claimed in claims 6 or 7, is characterized in that, wherein,
These disjunction means are the pressing members carrying out from the outer surface side of this glass wafer or the outer surface side of Silicon Wafer along this score line or groove pressing.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2013236414A JP2015097223A (en) | 2013-11-15 | 2013-11-15 | Segmentation method of wafer laminate, and segmentation device |
| JP2013-236414 | 2013-11-15 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN104658976A true CN104658976A (en) | 2015-05-27 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201410525155.7A Pending CN104658976A (en) | 2013-11-15 | 2014-10-08 | Dividing method and dividing apparatus for wafer laminated body |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JP2015097223A (en) |
| KR (1) | KR20150056447A (en) |
| CN (1) | CN104658976A (en) |
| TW (1) | TW201519303A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105826180A (en) * | 2015-01-08 | 2016-08-03 | 三星钻石工业股份有限公司 | Method and device for breaking image sensor-used wafer laminated body |
| CN108269812A (en) * | 2017-12-20 | 2018-07-10 | 武汉新芯集成电路制造有限公司 | A kind of wafer-level package process of optimization |
| CN108711550A (en) * | 2017-04-04 | 2018-10-26 | 株式会社迪思科 | processing method |
| CN115863226A (en) * | 2023-02-28 | 2023-03-28 | 天津伍嘉联创科技发展股份有限公司 | Folding machine capable of automatically breaking wafer for inspection and transferring |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6507866B2 (en) * | 2015-06-09 | 2019-05-08 | 三星ダイヤモンド工業株式会社 | Device and method for manufacturing semiconductor chip with solder ball |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5264332B2 (en) * | 2008-07-09 | 2013-08-14 | ラピスセミコンダクタ株式会社 | Bonded wafer, manufacturing method thereof, and manufacturing method of semiconductor device |
| JP2010056319A (en) * | 2008-08-28 | 2010-03-11 | Toshiba Corp | Method for manufacturing semiconductor device and semiconductor device |
| JP5800645B2 (en) * | 2011-09-01 | 2015-10-28 | 株式会社ディスコ | Tip spacing maintenance method |
| JP2013122984A (en) * | 2011-12-12 | 2013-06-20 | Canon Inc | Semiconductor device manufacturing method |
-
2013
- 2013-11-15 JP JP2013236414A patent/JP2015097223A/en active Pending
-
2014
- 2014-07-14 TW TW103124069A patent/TW201519303A/en unknown
- 2014-08-28 KR KR1020140113011A patent/KR20150056447A/en not_active Application Discontinuation
- 2014-10-08 CN CN201410525155.7A patent/CN104658976A/en active Pending
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105826180A (en) * | 2015-01-08 | 2016-08-03 | 三星钻石工业股份有限公司 | Method and device for breaking image sensor-used wafer laminated body |
| CN108711550A (en) * | 2017-04-04 | 2018-10-26 | 株式会社迪思科 | processing method |
| CN108711550B (en) * | 2017-04-04 | 2024-02-20 | 株式会社迪思科 | Processing method |
| CN108269812A (en) * | 2017-12-20 | 2018-07-10 | 武汉新芯集成电路制造有限公司 | A kind of wafer-level package process of optimization |
| CN108269812B (en) * | 2017-12-20 | 2019-02-15 | 武汉新芯集成电路制造有限公司 | A kind of wafer-level package process of optimization |
| CN115863226A (en) * | 2023-02-28 | 2023-03-28 | 天津伍嘉联创科技发展股份有限公司 | Folding machine capable of automatically breaking wafer for inspection and transferring |
Also Published As
| Publication number | Publication date |
|---|---|
| TW201519303A (en) | 2015-05-16 |
| JP2015097223A (en) | 2015-05-21 |
| KR20150056447A (en) | 2015-05-26 |
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