CN108269812A - A kind of wafer-level package process of optimization - Google Patents
A kind of wafer-level package process of optimization Download PDFInfo
- Publication number
- CN108269812A CN108269812A CN201711388186.2A CN201711388186A CN108269812A CN 108269812 A CN108269812 A CN 108269812A CN 201711388186 A CN201711388186 A CN 201711388186A CN 108269812 A CN108269812 A CN 108269812A
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- Prior art keywords
- wafer
- groove structure
- column surface
- crystal column
- forms
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- 238000000034 method Methods 0.000 title claims abstract description 38
- 238000005457 optimization Methods 0.000 title claims abstract description 8
- 239000013078 crystal Substances 0.000 claims abstract description 22
- 239000002184 metal Substances 0.000 claims abstract description 12
- 229910052751 metal Inorganic materials 0.000 claims abstract description 12
- 238000011049 filling Methods 0.000 claims abstract description 4
- 238000001459 lithography Methods 0.000 claims description 24
- 238000005538 encapsulation Methods 0.000 claims description 8
- 230000015572 biosynthetic process Effects 0.000 claims description 6
- 238000005530 etching Methods 0.000 claims description 6
- 238000005286 illumination Methods 0.000 claims description 4
- 238000000151 deposition Methods 0.000 claims description 3
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 abstract description 3
- 238000002955 isolation Methods 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000012536 packaging technology Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
- H01L27/14687—Wafer level processing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1464—Back illuminated imager structures
Abstract
The present invention provides a kind of wafer-level package process of optimization, wherein, one first wafer is provided, is included the following steps：First groove structure is formed in the first crystal column surface；Second groove structure is formed in the first crystal column surface；First groove structure and second groove structure are filled；The first crystal column surface after filling is planarized, until exposing the first crystal column surface；Pad structure is formed in the first crystal column surface；The one side that first wafer is formed with to pad structure is mutually bonded with one second wafer；One predetermined thickness is thinned to the first wafer；The first crystal column surface after being thinned draws metal wire, carries out subsequent encapsulating process；Advantageous effect：After new technique, influence of the subsequent encapsulating process metal lead wire to device can be shielded completely, simplified current technological process, so as to reduce multiple tracks technological process, improved the reliability of product.
Description
Technical field
The present invention relates to field of semiconductor manufacture more particularly to a kind of wafer-level package processes of optimization.
Background technology
As former back-illuminated type (Back Side Illumination, BSI) sensor CSP (Chip Scale
Package, wafer-level package) packaging technology is to do metal wire pin from carrying silicon chip face.Use pad made of prior art
Structure diagram as illustrated in figs. 1A and ib, including silicon base 11, shallow trench 12, metal pad 13, oxide skin(coating) 14.To ensure
Metal wire can export completely, and deep hole can penetrate the pad (BSI BOND PAD) of device (device) chip and backside-illuminated sensor
And stop on top of the encapsulation material because device trenches be isolated depth only less than 0.3um depth, subsequent device be thinned after thickness
More than 2um, much larger than the thickness of groove, this results in package metals lead that can contact Si, there is potential shadow to device reliability
It rings, needs to be dedicated to process optimization to improve product quality；
In addition, stop on top of the encapsulation material because deep hole can penetrate the pad of device chip and backside-illuminated sensor,
The technique that device metal lead is exported and connected by backside-illuminated sensor just seems somewhat extra.
Invention content
In view of the above-mentioned problems, the present invention provides a kind of wafer-level package process of optimization, wherein, provide one first
Wafer includes the following steps：
Step S1 forms first groove structure in first crystal column surface；
Step S2 forms second groove structure in first crystal column surface；
Step S3 is filled the first groove structure and the second groove structure；
Step S4 planarizes first crystal column surface after filling, until exposing first crystal column surface；
Step S5 forms pad structure in first crystal column surface；
Step S6, the one side that first wafer is formed with to the pad structure are mutually bonded with one second wafer；
A predetermined thickness is thinned to first wafer in step S7；
Step S8, first crystal column surface after being thinned draw metal wire.
Wherein, the step of forming the first groove in the step S1 be：
Step S11 forms one first lithography layer in first crystal column surface, patterns first lithography layer, Yu Yi
Precalculated position formation process window；
Step S12 performs etching first wafer by first lithography layer, stays in first wafer
One first predetermined depth；
Step S13 removes first lithography layer, forms the first groove structure.
Wherein, the step of forming the second groove structure in the step S2 be：
Step S21 forms one second lithography layer in first crystal column surface, patterns second lithography layer, Yu Yi
Precalculated position formation process window；
Step S22 performs etching first wafer by second lithography layer, stays in first wafer
One second predetermined depth；
Step S23 removes second lithography layer, forms the second groove structure.
Wherein, first predetermined depth is less than second predetermined depth.
Wherein, it is filled in the step 3 by depositing an oxide layer.
Wherein, the depth of the first groove structure is not more than 0.3 micron.
Wherein, it after the step S8, further includes and carries out subsequent encapsulation step.
Wherein, the second groove structure is formed in the side of the first groove structure.
Wherein, the method is suitable for back side illumination image sensor.
Advantageous effect：After new technique, influence of the subsequent encapsulating process metal lead wire to device can be shielded completely,
Simplify current technological process, so as to reduce multiple tracks technological process, improve the reliability of product.
Description of the drawings
The sectional view for the structure that Fig. 1 a prior arts are formed；
The vertical view for the structure that Fig. 1 b prior arts are formed；
Fig. 2 encapsulate in the prior art after structure sectional view；
The sectional view of structure that Fig. 3 a present invention is formed；
The vertical view of structure that Fig. 3 b present invention is formed；
Sectional view after the construction packages that Fig. 4 present invention is formed；
Fig. 5 general flow charts of the present invention；
Fig. 6 present invention forms the flow chart of first groove structure；
Fig. 7 present invention forms the flow chart of second groove structure.
Specific embodiment
Below in conjunction with the attached drawing in the embodiment of the present invention, the technical solution in the embodiment of the present invention is carried out clear, complete
Site preparation describes, it is clear that described embodiment is only part of the embodiment of the present invention, instead of all the embodiments.It is based on
Embodiment in the present invention, those of ordinary skill in the art obtained under the premise of creative work is not made it is all its
His embodiment, shall fall within the protection scope of the present invention.
It should be noted that in the absence of conflict, the feature in embodiment and embodiment in the present invention can phase
Mutually combination.
The invention will be further described in the following with reference to the drawings and specific embodiments, but not as limiting to the invention.
As shown in Figure 5, it is proposed that a kind of wafer-level package process of optimization, wherein, one first wafer 31 is provided, is wrapped
Include following steps：
Step S1 forms first groove structure 32 in 31 surface of the first wafer；
Step S2 forms second groove structure 33 in 31 surface of the first wafer；
Step S3 is filled the first groove structure 32 and the second groove structure 33；
Step S4 planarizes 31 surface of the first wafer after filling, until exposing 31 table of the first wafer
Face forms structure as shown in Figure 3a and Figure 3b shows；
Step S5 forms pad structure in 31 surface of the first wafer；
Step S6, the one side that first wafer 31 is formed with to the pad structure are mutually bonded with one second wafer；
A predetermined thickness is thinned to first wafer 31 in step S7；
Metal wire is drawn on step S8,31 surface of the first wafer after being thinned.
Above-mentioned technical proposal can shield influence of the subsequent encapsulating process metal lead wire to device completely, simplify current work
Skill flow so as to reduce multiple tracks technological process, improves the reliability of product.
In a preferred embodiment, as shown in fig. 6, the step of forming first groove 32 in the step S1
For：
Step S11 forms one first lithography layer in 31 surface of the first wafer, patterns first lithography layer, in
One precalculated position formation process window；
Step S12 performs etching first wafer 31 by first lithography layer, stays in first wafer
One first predetermined depth in 1；
Step S13 removes first lithography layer, forms the first groove structure 32.
In a preferred embodiment, as shown in fig. 7, forming the step of the second groove structure 33 in the step S2
Suddenly it is：
Step S21 forms one second lithography layer in 31 surface of the first wafer, patterns second lithography layer, in
One precalculated position formation process window；
Step S22 performs etching first wafer 31 by second lithography layer, stays in first wafer
One second predetermined depth in 31；
Step S23 removes second lithography layer, forms the second groove structure 33.
In a preferred embodiment, the first predetermined depth is less than the second predetermined depth, i.e. first groove structure 32
Depth is less than the depth of second groove structure 33.
There are differences in height between two kinds of groove structures in above-mentioned technical proposal can ensure preferably isolation effect.
In a preferred embodiment, it is filled in the step 3 by depositing an oxide layer.
In above-mentioned technical proposal, isolation effect can be better ensured that by being filled using an oxide layer.
In a preferred embodiment, the depth of the first groove structure is not more than 0.3 micron.
In a preferred embodiment, it after the step S8, further includes and carries out subsequent encapsulation step.
In above-mentioned technical proposal, subsequent encapsulation step is technological means commonly used in the art, therefore is not described here in detail.
In a preferred embodiment, the second groove structure is formed in the side of the first groove structure.
In above-mentioned technical proposal, there are differences in height can play better isolation effect for second groove and first groove.
In a preferred embodiment, the method is suitable for back side illumination image sensor.
In above-mentioned technical proposal, as shown in Figure 2 and Figure 4, make according to the method for the present invention, the sensor sectional view after encapsulation
It is made with the prior art, the sensor sectional view of encapsulation has no significant difference.
In above-mentioned technical proposal, method of the invention reduces multiple steps on the basis of existing technology, is reaching phase
In the case of with purpose, manufacture cost is greatly saved.
The foregoing is merely preferred embodiments of the present invention, not thereby limit embodiments of the present invention and protection model
It encloses, to those skilled in the art, should can appreciate that all with made by description of the invention and diagramatic content
Equivalent replacement and obviously change obtained scheme, should all include within the scope of the present invention.
Claims (9)
1. the wafer-level package process of a kind of optimization, which is characterized in that one first wafer is provided, is included the following steps：
Step S1 forms first groove structure in first crystal column surface；
Step S2 forms second groove structure in first crystal column surface；
Step S3 is filled the first groove structure and the second groove structure；
Step S4 planarizes first crystal column surface after filling, until exposing first crystal column surface；
Step S5 forms pad structure in first crystal column surface；
Step S6, the one side that first wafer is formed with to the pad structure are mutually bonded with one second wafer；
A predetermined thickness is thinned to first wafer in step S7；
Step S8, first crystal column surface after being thinned draw metal wire.
2. according to the method described in claim 1, it is characterized in that, the step of forming the first groove in the step S1
For：
Step S11 forms one first lithography layer in first crystal column surface, patterns first lithography layer, predetermined in one
Position formation process window；
Step S12 performs etching first wafer by first lithography layer, stays in one in first wafer
One predetermined depth；
Step S13 removes first lithography layer, forms the first groove structure.
3. according to the method described in claim 2, it is characterized in that, the step of the second groove structure is formed in the step S2
Suddenly it is：
Step S21 forms one second lithography layer in first crystal column surface, patterns second lithography layer, predetermined in one
Position formation process window；
Step S22 performs etching first wafer by second lithography layer, stays in one in first wafer
Two predetermined depths；
Step S23 removes second lithography layer, forms the second groove structure.
4. according to the method described in claim 3, it is characterized in that, first predetermined depth is less than the described second pre- depthkeeping
Degree.
5. it according to the method described in claim 1, it is characterized in that, is filled in the step 3 by depositing an oxide layer.
6. according to the method described in claim 1, it is characterized in that, the depth of the first groove structure is not more than 0.3 micron.
7. according to the method described in claim 1, it is characterized in that, after the step S8, further include and carry out subsequent encapsulation step
Suddenly.
8. according to the method described in claim 1, it is characterized in that, the second groove structure is formed in the first groove knot
The side of structure.
9. according to the method described in claim 1, it is characterized in that, the method is suitable for back side illumination image sensor.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711388186.2A CN108269812B (en) | 2017-12-20 | 2017-12-20 | A kind of wafer-level package process of optimization |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711388186.2A CN108269812B (en) | 2017-12-20 | 2017-12-20 | A kind of wafer-level package process of optimization |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN108269812A true CN108269812A (en) | 2018-07-10 |
| CN108269812B CN108269812B (en) | 2019-02-15 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201711388186.2A Active CN108269812B (en) | 2017-12-20 | 2017-12-20 | A kind of wafer-level package process of optimization |
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| Country | Link |
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Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100385621C (en) * | 2004-02-17 | 2008-04-30 | 三洋电机株式会社 | Semiconductor device and manufacturing method of the same |
| CN101800233A (en) * | 2009-02-10 | 2010-08-11 | 索尼公司 | Solid state image pickup device and manufacture method thereof and electronic equipment |
| CN104658976A (en) * | 2013-11-15 | 2015-05-27 | 三星钻石工业股份有限公司 | Dividing method and dividing apparatus for wafer laminated body |
-
2017
- 2017-12-20 CN CN201711388186.2A patent/CN108269812B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100385621C (en) * | 2004-02-17 | 2008-04-30 | 三洋电机株式会社 | Semiconductor device and manufacturing method of the same |
| CN101800233A (en) * | 2009-02-10 | 2010-08-11 | 索尼公司 | Solid state image pickup device and manufacture method thereof and electronic equipment |
| CN104658976A (en) * | 2013-11-15 | 2015-05-27 | 三星钻石工业股份有限公司 | Dividing method and dividing apparatus for wafer laminated body |
Also Published As
| Publication number | Publication date |
|---|---|
| CN108269812B (en) | 2019-02-15 |
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