CN106315504A - Wafer-level package MEMS chip with vertical pressure welding block and method for manufacturing same - Google Patents
Wafer-level package MEMS chip with vertical pressure welding block and method for manufacturing same Download PDFInfo
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- CN106315504A CN106315504A CN201610966908.7A CN201610966908A CN106315504A CN 106315504 A CN106315504 A CN 106315504A CN 201610966908 A CN201610966908 A CN 201610966908A CN 106315504 A CN106315504 A CN 106315504A
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
- B81B7/0032—Packages or encapsulation
- B81B7/007—Interconnections between the MEMS and external electrical signals
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C3/00—Assembling of devices or systems from individually processed components
- B81C3/001—Bonding of two components
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Abstract
The invention discloses a wafer-level package MEMS chip with vertical pressure welding block and a method for manufacturing the same. The wafer-level package MEMS chip comprises a cover plate, an MEMS structure layer and a bottom plate, the upper surface of the bottom plate has a bottom plate groove, and the surface and the side surface of the bottom plate groove have an insulating layer. The metal layer is deposited on the upper surface and the end face of the MEMS lead area and the insulating layer of the bottom plate groove, the metal layer is in electrical contact with the MEMS lead area, the metal layer located in the MEMS lead area is used as a horizontal pressure welding block, and the metal layer on the insulating layer of the bottom plate groove is the vertical pressure welding block. Under the premise of not making additional process, the vertical pressure welding block is formed as soon as the completion of the MEMS chip, so that the method for manufacturing the wafer-level package MEMS chip has the advantages of short development time, simple test and low cost, and is particularly suitable for manufacturing high-performance industrial-grade MEMS chip.
Description
Technical field
The invention belongs to MEMS chip field, be specifically related to the wafer-level package of MEMS chip with vertical press welding block,
The invention still further relates to this wafer-level package of MEMS chip with vertical press welding block and preparation method thereof.
Background technology
MEMS (Micro-Electro-Mechanical Systems) chip, particularly MEMS inertial sensor chip,
There is corresponding relation in its sensing direction with MEMS structure, and such as X-axis MEMS measuring unit can only sense the inertial signal of X-direction, Y
Axle and Z axis are with this in like manner；In consumer level MEMS inertial sensor, the measuring unit of tri-axles of X, Y, Z is integrated in same
To reduce chip size in MEMS chip；But in the MEMS inertial sensor of High performance industrial level, for ensureing the performance of product,
It is typically to make in a MEMS chip measuring unit of an axle, the signal in a direction, X, Y, Z tri-to be measured can only be sensed
Individual axial signal, needs three MEMS chip, three MEMS chip is packaged together by the method for encapsulation, becomes one
Individual product；Its embodiment generally has two kinds: one is that three MEMS chip are all horizontally mounted, but at least one of which chip
Two chips in sensing direction and remaining are different, and such as two sensing direction identical MEMS chip alignment X, Y-axis are installed, Z
The sensitive axis of axle MEMS chip and X, Y-axis are vertical, and this needs two kinds of different MEMS chip, and their MEMS structure is different, this
Being accomplished by designing two kinds of chips, even chip manufacture technique different, the performance of these two kinds of chips is the most different, in order to by different performance
MEMS chip debug basic performance, testing process is complicated, and testing cost is the highest；Another embodiment is complete by three
Exactly the same MEMS chip is respectively aligned to the direction of tri-axles of X, Y, Z and installs, and reaches to sense the purpose of three direction signals, and this is just
At least need a MEMS chip to be perpendicular to horizontal plane to install, need to make vertical press welding block thereon, in order to drawn by signal.
Various making are perpendicular to the method for the side press welding block of chip surface, and its basic procedure is the most close, i.e. at two cores
Sheet centre position etches through hole or groove, growth or deposition insulating layer, deposited metal on the insulating layer, is formed and covers through hole
Or the metal layer image of trenched side-wall, cutting through hole or groove, complete the chip with side wall and pressure welding block.Prior art
In, making vertical press welding block is all after the main Making programme of master chip completes, and carries out at encapsulated phase, or is fabricated separately only
Playing the support plate connecting the signal of telecommunication, these methods are required for extra Making programme to form vertical press welding block, complex process, one-tenth
This height.
Summary of the invention
The technical problem to be solved in the present invention is to overcome the deficiencies in the prior art, it is provided that one has vertical pressure welding
The wafer-level package of MEMS chip of block, this MEMS chip on the insulating barrier of base plate groove deposited metal as vertical pressure welding
Block, simple in construction, follow-up encapsulation is easy.
Another technical problem that the invention solves the problems that is to provide a kind of wafer-level package of MEMS with vertical press welding block
The manufacture method of chip, the method, on the premise of not increasing additional technique flow process, is formed while the MEMS chip that completes
Vertical press welding block, has that the development time is short, test is simple, low cost and other advantages, is particularly well-suited to High performance industrial level MEMS core
The making of sheet.
For solving above-mentioned technical problem, the invention provides a kind of wafer-level package of MEMS core with vertical press welding block
Sheet, is made up of cover plate, MEMS structure layer and base plate, a cover plate lower surface at least upper cavity, plate upper surface at least
Individual lower cavity, upper cavity and lower cavity are collectively forming annular seal space；MEMS structure layer is close by MEMS lead district, MEMS structure and MEMS
Envelope district composition, MEMS structure is positioned in annular seal space, and can be the most movable in annular seal space；Cover plate passes through the glass paste bed of material and MEMS
Structure sheaf is bonded, and base plate and MEMS structure interlayer have insulator separation, and plate upper surface also has bonding post and base plate groove, key
Zygostyle and the surface of base plate groove and side also have insulating barrier, and the anchor point of MEMS structure is fixed on bonding post, MEMS structure
The signal of telecommunication by MEMS lead district draw annular seal space；Metal level covers on the upper surface and end face of MEMS lead district, and
On the insulating barrier of base plate groove, it is positioned at the metal level of MEMS lead district as horizontal press welding block, is positioned at the insulating barrier of base plate groove
On metal level then become vertical press welding block.
During follow-up encapsulation, the base plate with the wafer-level package of MEMS chip of vertical press welding block is fixed at the bottom of encapsulating package
On plate, MEMS structure layer surface is parallel with shell base plate, at horizontal press welding block and the shell pad solder metal wire of MEMS chip,
The signal of MEMS chip is drawn out to shell；Similarly, the base plate facet of another MEMS chip is fixed on shell base plate,
MEMS structure layer surface is vertical with shell base plate, at vertical press welding block and the shell pad solder metal wire of MEMS chip, and will
The signal of MEMS chip is drawn out to shell；So, the multiaxis MEMS after encapsulation just can sense both horizontally and vertically
Signal.The vertical press welding block of wafer-level package of MEMS chipset with vertical press welding block of the present invention and horizontal press welding block are in one
Body, need not during encapsulation be arranged vertically multiple MEMS chip, also can the signal of the gentle vertical direction of water sensing, reduce encapsulation difficulty
Degree, reduces encapsulation volume.
In one embodiment of the present of invention, base plate groove top has chamfering, and metal level is also deposited on the exhausted of chamfering inclined-plane
In edge layer, and be conducive to metal level uniform fold chamfering inclined-plane and base plate groove side surface when deposited metal.
For solving above-mentioned technical problem, present invention also offers this wafer-level package of MEMS core with vertical press welding block
The manufacture method of sheet, step is:
(1) base plate disk makes: the single crystalline Si disk upper surface in a twin polishing forms base plate seal area, base plate lead-in wire
District, bonding post, lower cavity and base plate groove, then the single crystalline Si disk upper surface in whole twin polishing grows insulating barrier, just
Complete base plate disk；
(2) bonding wafers makes: using the Si disk of a heavy doping twin polishing as MEMS structure layer disk, with step
(1) the base plate seal area of the base plate disk made, bonding post and base plate lead district are bonded together by insulating barrier, then grinding
MEMS structure layer disk, to 10～100 μm, forms MEMS structure layer, completes the making of bonding wafers；
(3) MEMS structure disk makes: pass through mask etching in the MEMS structure layer of the bonding wafers made in step (2)
Form MEMS structure, MEMS seal area and MEMS lead district, expose base plate groove, the end face of MEMS lead district and base plate groove
Spacing between end face is 0～10 μm, and the anchor point of MEMS structure is fixed as being bonded on post, completes the making of MEMS knot disk；
(4) there is the making of the MEMS structure disk of metal level: the mask disk with cavity and window is directed at laminating
On the MEMS structure disk that step (3) makes, the base plate groove of MEMS structure disk is positioned at the window of mask disk, deposit
Metal level, removes mask disk, completes the making with the MEMS structure disk of metal level, the material of metal level be Al, Au,
Pt, Ni or Cu, thickness is 0.2～2 μm；
(5) cover plate disk makes: form cavity and sealing ring, silk on sealing ring on the Si disk of a twin polishing
Wire mark brush low temperature glass slurry, pre-burning is formed glass paste layer, is completed cover plate disk and make；
(6) have vertical press welding block wafer level packaging MEMS disk formed: the cover plate disk that step (5) is made with
What step (4) made has the MEMS structure wafer bonding of metal level together, forms the wafer level envelope with vertical press welding block
The MEMS disk of dress；Upper cavity after bonding, lower cavity, the glass paste bed of material, MEMS seal area, MEMS lead district, base plate seal
District and insulating barrier surround annular seal space jointly, and MEMS structure can be the most movable in annular seal space；
(7) the wafer-level package of MEMS chip with vertical press welding block is formed: the wafer level packaging that cutting step (6) makes
The cover plate disk of MEMS disk, expose metal level, form the MEMS disk of hemisect；The MEMS of cutting hemisect MEMS disk
Layer and base plate disk, metal level is cut open along base plate channel bottom, and the metal level being wherein positioned at base plate groove side surface is formed vertically
Press welding block, is positioned at the metal level of MEMS lead district both as the electrical contact district with MEMS structure layer, is also used as in follow-up encapsulation
Horizontal press welding block, completes the making with the wafer-level package of MEMS chip of vertical press welding block.
The manufacture method of the wafer-level package of MEMS chip with vertical press welding block of the present invention, is not increasing additional step
In the case of, make simultaneously and form horizontal press welding block (metal level of MEMS lead district) and vertical press welding block (base plate channel insulation
Metal level on layer), not only operating process is simple, and facilitates follow-up encapsulation.
Specifically, the manufacturing process of the mask disk described in step (4) is: by photoetching and dry method on a Si disk
Si reactive ion etching process etches cavity, and the described cavity degree of depth is 2～50 μm, the most again Si disk is carried out photoetching and
Deep Si reactive ion etching, wears the etching of Si disk, forms window, i.e. complete the making of mask disk.
Preferably, step (5) also makes lever at fovea superior intracavity, and MEMS structure can be stoped significantly to transport in vertical direction
Dynamic.
Preferably, step (5) also makes getter at fovea superior intracavity, for keeping the vacuum of MEMS chip annular seal space.
Preferably, step (5) has also etched on lead-in wire side cavity, cavity and fovea superior on lead-in wire side on cavity and sealed sides
Sealing ring is had to isolate between cavity and upper cavity between chamber and in sealed sides.The work of cavity in cavity and sealed sides on lead-in wire side
In follow-up disk half cutting process step, ensure that cutter cut away deck portion, without cutting to MEMS structure with being
Layer and base plate.
As one embodiment of the present of invention, step (1) also forms chamfering at base plate groove top, forms sediment in step (4)
Metal level uniform fold chamfering inclined-plane and base plate groove side surface is conducive to during long-pending metal level.
Accompanying drawing explanation
Fig. 1 Fig. 7 is the Making programme figure of the MEMS disk of the wafer level packaging with vertical press welding block of embodiment one.
Fig. 8 is the schematic diagram of the MEMS disk of the hemisect of embodiment one.
Fig. 9 is the schematic diagram of the MEMS chip of the wafer level packaging with vertical press welding block of embodiment one.
Figure 10 is the top view of the MEMS chip lead district of the wafer level packaging with vertical press welding block of embodiment one.
Figure 11 is the encapsulation schematic diagram of MEMS chip in multiaxis MEMS.
Figure 12 is that the section of the MEMS chip metal level of the wafer level packaging with vertical press welding block of embodiment two amplifies
Figure.
Detailed description of the invention
The invention will be further described with embodiment below in conjunction with the accompanying drawings.
Embodiment one
There is the manufacture method of the wafer-level package of MEMS chip of vertical press welding block, comprise the following steps:
(1) base plate disk 1 makes: using the single crystalline Si disk 10 of twin polishing as baseboard material, by resist coating, right
Accurate, expose, after the lithographic process steps such as development (hereinafter referred to as photoetching), the single crystalline Si disk 10 of twin polishing form photoetching
Glue pattern, with the mask that this photoetching offset plate figure is deep Si reactive ion etching (DRIE), etches in the reaction atmosphere of fluorine-containing (F)
Si, reacts gases used usually SF6And C4F8, wherein SF6It is isotropic etching gas, C4F8It is the gas producing polymer
Body, replaces SF in reactive ion etch equipment6And C4F8, the single crystalline Si disk 10 of twin polishing etches 50～200 μm
Deep figure, removes photoresist, cleaning, forms base plate groove 11, base plate lead district 12, lower cavity 13, bonding post 14 and base plate
Seal area 15, then at the superficial growth insulating barrier 16 of single crystalline Si disk 10 of whole twin polishing, usually SiO2Layer, it is possible to
To be SiO2With Si3N4Composite bed, complete base plate disk 1 as shown in Figure 1.
(2) bonding wafers 2 makes: using the single crystalline Si disk 20 of heavily doped twin polishing as MEMS structure layer material,
The base plate disk 1 that the single crystalline Si disk 20 of heavily doped twin polishing and step (1) make is carried out Si-SiO2Bonding, bonding
The single crystalline Si disk 20 of rear heavily doped twin polishing is bonded post 14, base plate seal area 15 and base plate lead-in wire with base plate disk 1
District 12 is bonded together by insulating barrier 16, as in figure 2 it is shown, the thickness of the single crystalline Si disk 20 of the most heavily doped twin polishing
Be 300～800 μm, the thickest as MEMS structure layer, need to be ground to MEMS structure layer desired thickness, generally 10～
100 μm, polishing, form MEMS structure layer 21, complete the making of bonding wafers 2.
(3) MEMS structure disk 3 makes: the surface glazing of the MEMS structure layer 21 of the bonding wafers 2 made in step (2)
Carve and form photoetching offset plate figure, with the mask that this photoetching offset plate figure is deep Si reactive ion etching (DRIE), in the reaction of fluorine-containing (F)
In atmosphere etch Si, MEMS structure layer is divided into MEMS seal area 21a, MEMS lead district 21d, MEMS lead-in wire seal area 21c,
MEMS structure 21b, the anchor point 21b ' of MEMS structure 21b is fixed on bonding post 14, covers the MEMS knot on base plate groove 11
Structure layer 21 is etched, as it is shown on figure 3, the end face 21d ' of MEMS lead district 21d and base plate groove 11 side 11b horizontal direction
Space D is 0～10 μm, removes photoresist, cleaning, completes the making of MEMS structure disk 3.
(4) there is the making of the MEMS structure disk 3 ' of metal level 34: the present invention uses the method deposit gold of mask shielding
Belong to layer, so needing first to make a mask disk 30 with cavity 31 and window 32, i.e. the most logical on a Si disk
Crossing photoetching and dry method Si reactive ion etching process step, make cavity 31, its degree of depth is in 2～50 μm, at mask disk
Protection MEMS structure 21b during 30 laminating MEMS structure disk 3；Si disk is carried out photoetching and the erosion of deep Si reactive ion the most again
Carve, the etching of Si disk is worn, forms window 32, form mask disk 30, be aligned with being fitted in the MEMS knot that step (3) makes
On structure disk 3, the base plate groove 11 of MEMS structure disk 3 is positioned at the window 32 of mask disk 30, as shown in Figure 4, by spattering
Penetrating or evaporation technology step, metallic 33 is deposited on the correspondence position of MEMS structure disk 3 through window 32, forms metal level
34, move mask disk 30, complete the deposit of metal level 34；The material of metal level 34 is usually Al, Au, Pt, Ni or Cu etc., thick
Degree generally 0.3～2 μm, cover in MEMS lead district 21d, MEMS lead district end face 21d ' and the bottom surface of base plate groove 11
On the insulating barrier 16 of 11a and side 11b, metal level 34 is formed with MEMS lead district 21d and MEMS lead district end face 21d ' and is electrically connected
Connect, but with base plate disk 1 without electrically connecting, complete the making with the MEMS structure disk 3 ' of metal level 34, as shown in Figure 5.
(5) cover plate disk 4 makes: using the single crystalline Si disk 40 of twin polishing as cover plate materials, the list to twin polishing
Brilliant Si disk 40 photoetching and etching and processing, cavity 44 and sealing ring in cavity 41, sealed sides on cavity 43, the side that goes between in is formationed
42, the degree of depth of upper cavity 43, in 10～100 μm, is then starched by silk-screen printing technique printing low temperature glass on sealing ring 42
Material, presintering, form the glass paste bed of material 45, complete the making of cover plate disk 4, as shown in Figure 6.As required, can be at fovea superior
The lever (Stopper) stoping MEMS structure 21c significantly to be moved is made in vertical direction in chamber 43；Product according to MEMS chip
Type, it is also possible to make getter, the vacuum of the chip annular seal space after keeping disk to machine in upper cavity 43.
On lead-in wire side, in cavity 41 and sealed sides, the effect of cavity 44 is in follow-up disk half cutting process step to ensure cutter
Cut away deck portion, without cutting to MEMS structure layer 21 and base plate 10.
(6) the MEMS disk with vertical wafer level packaging is formed: cover plate disk 4 alignment step step (5) made
What (4) made suddenly has the MEMS structure disk 3 ' of metal level 34, puts in the bonding chamber of bonder, first evacuation, removes key
Air and the absorption of closing intracavity are being bonded the steam etc. of cavity wall, then according to the needs of MEMS chip product type, or in vacuum
In, or setting the protective gas of air pressure, in nitrogen, noble gas etc., two disks are applied mechanical pressure, is heated to
400～500 DEG C, implement Glass frits bonding, form the MEMS disk 5 of the wafer level packaging with vertical press welding block, such as Fig. 7 institute
Show.The glass paste bed of material 45, MEMS seal area 21a and MEMS after upper cavity 43, lower cavity 13, pressing go between at seal area 21c, the end
Plate seal area 15, insulating barrier 16 surround an annular seal space 51, and MEMS structure 21b can be the most movable in annular seal space 51；Metal
Layer 34 is positioned at and is enclosed by cavity 41, the glass paste bed of material 45, MEMS lead-in wire seal area 21c, base plate groove 11, insulating barrier 16 on lead-in wire side
In the lead-in wire annular seal space 51a become, base plate groove side surface 11b is vertical with MEMS structure layer surface.
(7) the wafer-level package of MEMS chip with vertical press welding block is formed: formed with abrasive wheel cutting machine cutting step (6)
The cover plate disk 4 of MEMS disk 5 of the wafer level packaging with vertical press welding block, control the height of cutter, do not cut to
MEMS structure layer 21 and base plate disk 1, as shown in Figure 8, the cover plate circle of cavity 44 part in cavity 41 and sealed sides on lead-in wire side
Sheet 4 is cut, and forms the cover plate 52 of MEMS chip, and at this moment lead-in wire side seal chamber 41 is opened, and exposes metal level 34, forms half
The MEMS disk 6 of cutting, in this manner it is possible to carry out wafer level test, then by hemisect MEMS circle to hemisect MEMS disk 6
On sheet 6, underproof chip is got ready or chip position on hemisect MEMS disk 6 is stored in computer.
Then, then with machine cuts or laser cutting method, the hemisect MEMS disk 6 of wafer level test is cut through
MEMS structure layer 21 and base plate disk 1, complete the making with the wafer-level package of MEMS chip 7 of vertical press welding block, such as Fig. 9 institute
Showing, as the base plate 53 of MEMS chip 7 after base plate disk 1 cutting, base plate 53 facet is vertical with MEMS structure layer 21 surface；Gold
Belonging to layer 34 to be cut open along base plate channel bottom 11a, the metal level 34 being wherein positioned in base plate groove side surface 11b hangs down as independent
Vertical compression welding block 34b, the metal level 34 being positioned in MEMS lead district 21d is both as the electrical contact district with MEMS structure layer 21, it is possible to
To be used as horizontal press welding block 34a in follow-up encapsulation.
The wafer-level package of MEMS chip 7 with vertical press welding block that the present embodiment makes, as it is shown in figure 9, by covering
Plate 52, MEMS structure layer 21 and base plate 53 form, and cover plate 52 lower surface has a upper cavity 43, and base plate 53 upper surface has under two
Cavity 13, upper cavity 43 and lower cavity 13 are collectively forming annular seal space 51；MEMS structure layer 21 is tied by MEMS seal area 21a, MEMS
Structure 21b, MEMS lead-in wire seal area 21c and MEMS lead district 21d composition, MEMS structure 21b is positioned in annular seal space 51, and can be close
Freely activity in envelope chamber 51；Being printed with the glass paste bed of material 45 on the sealing ring 42 of cover plate 52, cover plate 52 is by the glass paste bed of material 45
The seal area 21c that goes between with MEMS seal area 21a and MEMS of MEMS structure layer 21 is bonded, and has between base plate 53 and MEMS structure layer 21
Insulating barrier 16 is isolated, and base plate 53 upper surface also has bonding post 14 and base plate groove 11, and bonding post 14 is positioned at two lower cavitys 13
Between, bonding post 14 and the surface of base plate groove 11 and side also have insulating barrier 16, and the anchor point 21b ' of MEMS structure is fixed on
On bonding post 14, the signal of telecommunication of MEMS structure 21b draws annular seal space 51 by MEMS lead district 21d；Metal level 34 covers
On the upper surface of MEMS lead district 21d and end face, and on the insulating barrier 16 of base plate groove 11, it is positioned at MEMS lead district 21d
Metal level 34 then becomes vertical press welding block as horizontal press welding block, the metal level 34 being positioned on base plate groove 11 side 11b.
Figure 10 is the vertical view of MEMS lead district 21d of the wafer-level package of MEMS chip 7 in Fig. 9 with vertical press welding block
Figure, does not show that cover plate 52, metal level 34 cover part MEMS lead district 21d and part MEMS lead district side 21d ', MEMS
Lead district 21d is positioned at above base plate lead district 12, and MEMS lead-in wire seal area 21c is positioned at above base plate seal area 15, both
It is connected to；MEMS lead-in wire sealed island 21e is had, for being formed than more uniform space 61 between each MEMS lead-in wire seal area 21c
With MEMS lead-in wire seal area 21c, MEMS lead-in wire sealed island 21e, it is simple to when air-tightness wafer bonding, the glass paste bed of material 45 is permissible
Sufficiently fill in space 61, and cover on 21c, MEMS lead-in wire sealed island 21e of MEMS lead-in wire seal area, formed firm
Annular seal space 51；MEMS lead district 21d, MEMS lead-in wire seal area 21c and MEMS lead-in wire sealed island 21e and base plate seal area 15 and the end
Insulating barrier 16 is had to electrically insulate between plate lead district 12.
Figure 11 illustrates the installation method of MEMS chip in multiaxis MEMS, and encapsulating package is by base plate 71, sidewall 72, platform
Rank 73 form, and step 73 makes metal pad 74, is not drawn into the outer pin of shell here；There is the disk of vertical press welding block
The base plate 53a back side of level package of MEMS chip 7a is fixed on shell base plate 71 by bonding die glue 75, MEMS structure layer 21 surface
Parallel with shell base plate 71, there is the horizontal press welding block 34a of wafer-level package of MEMS chip 7a and the shell of vertical press welding block
At least one wires 76 in pad 74 welding, is drawn out to shell by the signal of MEMS chip 7a；Similarly, wafer level packaging
The base plate facet of MEMS chip 7b is fixed on shell base plate 71 by bonding die glue 75, at the bottom of MEMS structure layer 21 surface and shell
Plate 71 is vertical, and vertical press welding block 34b and the shell pad 75 in MEMS chip 7b is also welded to a few wires 76, by MEMS
The signal of chip 7b is drawn out to shell；So, the multiaxis MEMS after encapsulation just can sense letter both horizontally and vertically
Number.
It addition, by two MEMS chip 7a mutual right angle setting, MEMS core in the plane that shell base plate 71 is parallel
Sheet 7b is perpendicular to the Plane Installation of shell base plate 71, it is possible to realize the MEMS of X, Y, Z triaxial induction.
Embodiment two
The manufacture method of the wafer-level package of MEMS chip 7 with vertical press welding block of the present embodiment and the system of embodiment one
Make method similar, the difference is that only that step (1) also makes chamfering 11c at base plate groove 11 top, chamfering 11c also grows
Insulating barrier 16；Step (4) also deposited metal 34 on the insulating barrier 16 on chamfering 11c inclined-plane, and owing to there being depositing of chamfering 11c
, also help metal level 34 uniform fold chamfering 11c inclined-plane and base plate groove side surface 11b in step (4).
The wafer-level package of MEMS chip 7 with vertical press welding block of the present embodiment making and having that embodiment one makes
The wafer-level package of MEMS chip 7 of vertical press welding block the difference is that only that base plate groove 11 top also has chamfering 11c, metal
Layer 34 is also deposited on the inclined-plane of chamfering 11c, as shown in figure 12.
Claims (9)
1. there is the wafer-level package of MEMS chip of vertical press welding block, be made up of cover plate, MEMS structure layer and base plate, cover plate following table
A face at least upper cavity, a plate upper surface at least lower cavity, upper cavity and lower cavity are collectively forming annular seal space；
MEMS structure layer is made up of MEMS lead district, MEMS structure and MEMS seal area, and MEMS structure is positioned in annular seal space, and can be close
Freely activity in envelope chamber；Cover plate is bonded with MEMS structure layer by the glass paste bed of material, and base plate and MEMS structure interlayer have insulating barrier
Isolation, it is characterised in that: plate upper surface also has bonding post and base plate groove, bonding post and the surface of base plate groove and side
Also having insulating barrier, the anchor point of MEMS structure is fixed on bonding post, and the signal of telecommunication of MEMS structure is drawn by MEMS lead district
Annular seal space；Metal level covers on the upper surface and end face of MEMS lead district, and on the insulating barrier of base plate groove, metal level with
MEMS lead district forms electrical contact, is positioned at the metal level of MEMS lead district as horizontal press welding block, is positioned at the insulation of base plate groove
Metal level on layer then becomes vertical press welding block.
The wafer-level package of MEMS chip with vertical press welding block the most according to claim 1, it is characterised in that: base plate ditch
Groove top has chamfering, and metal level is also deposited on the insulating barrier on chamfering inclined-plane.
3. having the manufacture method of the wafer-level package of MEMS chip of vertical press welding block, step is:
(1) base plate disk make: a twin polishing single crystalline Si disk upper surface formed base plate seal area, base plate lead district,
Bonding post, lower cavity and base plate groove, then the single crystalline Si disk upper surface in whole twin polishing grows insulating barrier, just makes
Complete base plate disk；
(2) bonding wafers makes: using the Si disk of a heavy doping twin polishing as MEMS structure layer disk, make with step (1)
The base plate seal area of the base plate disk made, bonding post and base plate lead district are bonded together by insulating barrier, then grinding MEMS
Structure sheaf disk, to 10～100 μm, forms MEMS structure layer, completes the making of bonding wafers；
(3) MEMS structure disk makes: formed by mask etching in the MEMS structure layer of the bonding wafers made in step (2)
MEMS structure, MEMS seal area and MEMS lead district, expose the end face of base plate groove, the end face of MEMS lead district and base plate groove
Between spacing be 0～10 μm, the anchor point of MEMS structure is fixed as being bonded on post, completes the making of MEMS knot disk；
(4) there is the making of the MEMS structure disk of metal level: be directed at by the mask disk with cavity and window and be fitted in step
Suddenly on the MEMS structure disk that (3) make, the base plate groove of MEMS structure disk is positioned at the window of mask disk, deposits metal
Layer, removes mask disk, completes the making with the MEMS structure disk of metal level；
(5) cover plate disk makes: form cavity and sealing ring, screen printing on sealing ring on the Si disk of a twin polishing
Brush low temperature glass slurry, pre-burning is formed glass paste layer, is completed cover plate disk and make；
(6) the MEMS disk of the wafer level packaging with vertical press welding block is formed: cover plate disk step (5) made and step
(4) together, formation has the wafer level packaging of vertical press welding block to the MEMS structure wafer bonding with metal level made
MEMS disk；Upper cavity after bonding, lower cavity, the glass paste bed of material, MEMS seal area, MEMS lead district, base plate seal area and
Insulating barrier surrounds annular seal space jointly, and MEMS structure can be the most movable in annular seal space；
(7) the wafer-level package of MEMS chip with vertical press welding block is formed: the wafer level packaging that cutting step (6) makes
The cover plate disk of MEMS disk, exposes metal level, forms the MEMS disk of hemisect；The MEMS layer of cutting hemisect MEMS disk
With base plate disk, metal level is cut open along base plate channel bottom, and the metal level being wherein positioned at base plate groove side surface forms vertical pressure
Welding block, is positioned at the metal level of MEMS lead district both as the electrical contact district with MEMS structure layer, is also used as water in follow-up encapsulation
Concora crush welding block, completes the making with the wafer-level package of MEMS chip of vertical press welding block.
The manufacture method of the wafer-level package of MEMS chip with vertical press welding block the most according to claim 3, its feature
It is: the manufacturing process of the mask disk described in step (4) is: by photoetching and dry method Si reactive ion on a Si disk
Etch process etches cavity, and the described cavity degree of depth is 2～50 μm, the most again Si disk is carried out photoetching and deep Si reaction from
Son etching, wears the etching of Si disk, forms window, i.e. complete the making of mask disk.
The manufacture method of the wafer-level package of MEMS chip with vertical press welding block the most according to claim 3, its feature
Being: the material of the metal level described in step (4) is Al, Au, Pt, Ni or Cu, thickness is 0.2～2 μm.
The manufacture method of the wafer-level package of MEMS chip with vertical press welding block the most according to claim 3, its feature
It is: step (5) also makes lever at fovea superior intracavity.
The manufacture method of the wafer-level package of MEMS chip with vertical press welding block the most according to claim 3, its feature
It is: step (5) also makes getter at fovea superior intracavity.
8., according to the manufacture method of the wafer-level package of MEMS chip with vertical press welding block described in claim 6 or 7, it is special
Levy and be: step (5) has also etched on lead-in wire side cavity on cavity and sealed sides, on lead-in wire side between cavity and upper cavity and
Sealing ring is had to isolate between cavity and upper cavity in sealed sides.
The manufacture method of the wafer-level package of MEMS chip with vertical press welding block the most according to claim 3, its feature
It is: step (1) also forms chamfering on base plate groove top, and step (4) is on chamfering inclined-plane also deposited metal.
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