TWI673783B - Processing method of package substrate - Google Patents
Processing method of package substrate Download PDFInfo
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- TWI673783B TWI673783B TW104136846A TW104136846A TWI673783B TW I673783 B TWI673783 B TW I673783B TW 104136846 A TW104136846 A TW 104136846A TW 104136846 A TW104136846 A TW 104136846A TW I673783 B TWI673783 B TW I673783B
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- resin
- cutting
- substrate
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- thermal diffusion
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- 239000000758 substrate Substances 0.000 title claims abstract description 97
- 238000003672 processing method Methods 0.000 title claims description 7
- 238000005520 cutting process Methods 0.000 claims abstract description 96
- 229920005989 resin Polymers 0.000 claims abstract description 72
- 239000011347 resin Substances 0.000 claims abstract description 72
- 238000009792 diffusion process Methods 0.000 claims abstract description 50
- 238000004806 packaging method and process Methods 0.000 claims description 9
- 238000000034 method Methods 0.000 claims description 6
- 230000001678 irradiating effect Effects 0.000 claims description 2
- 230000015572 biosynthetic process Effects 0.000 abstract description 3
- 230000002745 absorbent Effects 0.000 abstract description 2
- 239000002250 absorbent Substances 0.000 abstract description 2
- 238000007789 sealing Methods 0.000 abstract description 2
- 239000010410 layer Substances 0.000 description 13
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 238000002679 ablation Methods 0.000 description 2
- 239000003822 epoxy resin Substances 0.000 description 2
- 230000017525 heat dissipation Effects 0.000 description 2
- 229920000647 polyepoxide Polymers 0.000 description 2
- 229920002050 silicone resin Polymers 0.000 description 2
- 229910001220 stainless steel Inorganic materials 0.000 description 2
- 239000010935 stainless steel Substances 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 239000011247 coating layer Substances 0.000 description 1
- 230000003028 elevating effect Effects 0.000 description 1
- 239000000835 fiber Substances 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 230000011218 segmentation Effects 0.000 description 1
- 239000002893 slag Substances 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/08—Devices involving relative movement between laser beam and workpiece
- B23K26/083—Devices involving movement of the workpiece in at least one axial direction
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/08—Devices involving relative movement between laser beam and workpiece
- B23K26/0869—Devices involving movement of the laser head in at least one axial direction
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/14—Working by laser beam, e.g. welding, cutting or boring using a fluid stream, e.g. a jet of gas, in conjunction with the laser beam; Nozzles therefor
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/36—Removing material
- B23K26/38—Removing material by boring or cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
- H01L21/561—Batch processing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/93—Batch processes
- H01L24/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
- H01L24/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K2101/00—Articles made by soldering, welding or cutting
- B23K2101/36—Electric or electronic devices
- B23K2101/40—Semiconductor devices
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Mechanical Engineering (AREA)
- Plasma & Fusion (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Laser Beam Processing (AREA)
- High Energy & Nuclear Physics (AREA)
- Dicing (AREA)
- Electromagnetism (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
Abstract
不產生毛邊且有效率的進行在熱擴散基板上配置元件並 以樹脂密封而構成之封裝基板的分割。 Effortlessly arrange elements on the thermal diffusion substrate without burrs Division of a package substrate formed by resin sealing.
實施下列步驟:切 削溝形成步驟,使切削刀切入樹脂到未達熱擴散基板的深度,並沿著分割預定線切削,而使樹脂殘存;樹脂切斷步驟,沿著切削溝照射對樹脂具有吸收性之波長的紅外線雷射光線以切斷殘存的樹脂;及分割步驟,照射對露出的熱擴散基板具有吸收性之波長的雷射光線並沿著分割預定線切斷熱擴散基板,分割成一個個的封裝元件,藉此可以分別縮短樹脂之切斷與熱擴散基板之切斷所需要的時間,進而縮短整體之封裝基板的分割所需要的時間。 Perform the following steps: Cut The groove formation step cuts the resin into the depth of the thermal diffusion substrate and cuts along the predetermined division line to leave the resin. The resin cutting step irradiates the resin with a wavelength that is absorbent to the resin along the cutting groove. Infrared laser light to cut the remaining resin; and a dividing step of radiating laser light having a wavelength absorptive to the exposed thermal diffusion substrate, cutting the thermal diffusion substrate along a predetermined division line, and dividing into individual package elements In this way, the time required for cutting the resin and the thermal diffusion substrate can be shortened, respectively, and the time required for dividing the entire package substrate can be shortened.
Description
本發明是有關於將封裝基板分割成一個個的封裝元件之方法。 The present invention relates to a method for dividing a package substrate into individual package elements.
在熱擴散基板上配置複數個元件,並以環氧樹脂或矽樹脂等將元件密封而構成的封裝基板,藉由將相鄰的元件之間切削等而切斷,分割成以一個個的元件為單位的封裝元件。由於放熱性較高、價位便宜等因素,因此熱擴散基板使用不鏽鋼、銅等金屬(參照例如,專利文獻1)。 A package substrate in which a plurality of elements are arranged on a heat diffusion substrate and the elements are sealed with epoxy resin or silicone resin is cut by cutting or the like between adjacent elements and divided into individual elements. Packaged components as a unit. Due to factors such as high heat dissipation and low price, metals such as stainless steel and copper are used for the heat diffusion substrate (see, for example, Patent Document 1).
又,封裝基板的分割中,亦可考慮以切削刀僅切斷樹脂,而熱擴散基板則以雷射加工進行切斷的方法(日本專利特願2013-168794號)、或以雷射加工切斷樹脂與熱擴散基板兩者的方法(日本專利特願2014-153646號)。 In the division of the package substrate, a method in which only the resin is cut by a cutter, and the thermal diffusion substrate is cut by laser processing (Japanese Patent Application No. 2013-168794), or by laser processing may be considered. Method for breaking both resin and thermal diffusion substrate (Japanese Patent Application No. 2014-153646).
專利文獻1:日本專利特開2009-224683號公報 Patent Document 1: Japanese Patent Laid-Open No. 2009-224683
然而,當旋轉的切削刀切入封裝基板而切削時,金屬製的熱擴散基板被切斷的部分容易產生毛邊。若以切削刀僅切斷樹脂,並以雷射加工切斷熱擴散基板,雖能防止毛邊的發生,但由於切斷樹脂時,切削刀的前端接觸熱擴散基板,因此切削阻力會變大,無法提高切削速度。另一方面,以雷射加工切斷樹脂時,為了防止切斷面燒焦,必須抑制脈衝雷射光線的輸出,並使其燒蝕複數次來切斷,而在切斷時花費很多時間,在生產性方面產生問題。此問題在樹脂越厚時越顯著。 However, when the rotating cutter cuts into the package substrate and cuts it, the cut portion of the metal thermal diffusion substrate is liable to generate burrs. If only the resin is cut by a cutter and the thermal diffusion substrate is cut by laser processing, although burrs can be prevented, the cutting resistance of the cutting blade will increase because the tip of the cutter contacts the thermal diffusion substrate when cutting the resin. Unable to increase cutting speed. On the other hand, when cutting the resin by laser processing, in order to prevent the cut surface from scorching, it is necessary to suppress the output of the pulsed laser light and ablate it several times to cut it, and it takes a lot of time when cutting. Problems in productivity. This problem becomes more significant as the resin is thicker.
本發明是有鑑於此種問題而作成者,其目的在於不產生毛邊且有效率地進行在熱擴散基板上配置有元件並以樹脂密封而構成之封裝基板的分割。 The present invention has been made in view of such problems, and an object thereof is to efficiently divide a package substrate configured by arranging elements on a heat diffusion substrate and sealing them with resin without generating burrs.
本發明為一種封裝基板之加工方法,是沿著在熱擴散基板的表面形成為格子狀之分割預定線分斷封裝基板而分割成一個個封裝基板的封裝基板之加工方法,前述封裝基板是在由該分割預定線所劃分而成的複數個區域中分別配置有元件,並以樹脂被覆複數個元件,而形成樹脂層,前述封裝基板之加工方法包含:切削溝形成步驟,以保持機構保持封裝基板的熱擴散基板側,將切削刀定位於分割預定線後切入樹脂到未達熱擴散基板的深度,再沿著分割預定線進行切削,藉此使樹脂殘存,沿著分割預定線形成切削溝; 樹脂切斷步驟,沿著切削溝照射對樹脂具有吸收性之波長的紅外線雷射光線,切斷殘存之樹脂,該切削溝是沿著實施切削溝形成步驟並以保持機構保持有熱擴散基板側之封裝基板的分割預定線而形成;及分割步驟,沿著分割預定線照射對露出的熱擴散基板具有吸收性之波長的雷射光線,並沿著分割預定線切斷熱擴散基板,而分割成一個個的封裝元件,前述分割預定線是沿著實施樹脂切斷步驟並以保持機構保持有熱擴散基板側之封裝基板的分割預定線。 The present invention is a processing method of a packaging substrate, which is a processing method of packaging substrates that are divided into packaging substrates by dividing the packaging substrate along predetermined division lines formed in a grid shape on the surface of the thermal diffusion substrate. Components are arranged in a plurality of areas divided by the predetermined dividing line, and the plurality of components are covered with resin to form a resin layer. The processing method of the aforementioned package substrate includes a cutting groove forming step to maintain a mechanism to hold the package. Position the cutting blade on the thermal diffusion substrate side of the substrate, cut the resin to the depth of the thermal diffusion substrate after cutting at a predetermined division line, and then cut along the predetermined division line to make the resin remain and form a cutting groove along the predetermined division line. ; The resin cutting step irradiates infrared laser light having a wavelength absorptive to the resin along a cutting groove to cut off the remaining resin. The cutting groove is provided along the cutting groove forming step and the thermal diffusion substrate side is held by a holding mechanism. Forming a package substrate with a division line; and a division step, irradiating laser light having a wavelength absorptive to the exposed thermal diffusion substrate along the division line, cutting the thermal diffusion substrate along the division line, and dividing For each package element, the aforementioned planned division line is a planned division line along the package substrate on which the heat diffusion substrate side is held by the holding mechanism by the resin cutting step.
較理想的是,樹脂切斷步驟所使用的紅外線雷射光線為CO2雷射,脈衝寬度為10ns~10μs。 Ideally, the infrared laser light used in the resin cutting step is a CO 2 laser with a pulse width of 10 ns to 10 μs .
由於本發明不使用切削刀切削熱擴散基板,因此能夠防止毛邊的發生,並且能夠防止切削速度降低,且由於樹脂的切斷是以切削及雷射加工來進行,因此可以縮短切斷樹脂所需要的時間。從而,可以分別縮短樹脂之切斷與熱擴散基板之切斷所需要的時間,整體而言可縮短封裝基板的分割所需要的時間。又,由於是以切削與雷射加工進行樹脂切斷,因此即使是樹脂較厚的基板,切斷所需要的時間也不會變長,生產性也不會降低。 Since the present invention does not use a cutter to cut the thermal diffusion substrate, it is possible to prevent the occurrence of burrs and prevent a reduction in cutting speed. Also, since the cutting of the resin is performed by cutting and laser processing, it is possible to shorten the resin cutting time. Accordingly, the time required for cutting the resin and the heat diffusion substrate can be shortened, respectively, and the time required for dividing the package substrate can be shortened as a whole. In addition, since the resin is cut by cutting and laser processing, even if the substrate is thick, the time required for cutting does not increase, and the productivity does not decrease.
1‧‧‧加工裝置 1‧‧‧Processing Equipment
2‧‧‧保持機構 2‧‧‧ holding agency
20‧‧‧保持面 20‧‧‧ keep face
21‧‧‧溝 21‧‧‧ trench
22‧‧‧吸引孔 22‧‧‧ suction hole
23‧‧‧旋轉機構 23‧‧‧Rotating mechanism
3‧‧‧切削機構 3‧‧‧ cutting mechanism
30‧‧‧轉軸 30‧‧‧ shaft
31‧‧‧殼體 31‧‧‧shell
32‧‧‧切削刀 32‧‧‧Cutter
4‧‧‧第1雷射加工機構 4‧‧‧The first laser processing mechanism
40‧‧‧第1照射頭 40‧‧‧The first irradiation head
41、51‧‧‧輔助氣體導入部 41、51‧‧‧Auxiliary gas introduction department
42、52‧‧‧聚光透鏡 42, 52‧‧‧ condenser lens
5‧‧‧第2雷射加工機構 5‧‧‧The second laser processing mechanism
50‧‧‧第2照射頭 50‧‧‧ 2nd irradiation head
6‧‧‧加工進給機構 6‧‧‧ processing feed mechanism
60、70、80、90‧‧‧滾珠螺桿 60, 70, 80, 90‧‧‧ ball screw
61、71、81、91‧‧‧導軌 61, 71, 81, 91‧‧‧ rails
62、72、82、92‧‧‧馬達 62, 72, 82, 92‧‧‧ Motors
63、73‧‧‧移動板 63, 73‧‧‧ mobile board
7‧‧‧分度進給機構 7‧‧‧ index feed mechanism
8‧‧‧切入進給機構 8‧‧‧cut into the feed mechanism
83、93‧‧‧昇降板 83, 93‧‧‧ Lifting plate
9‧‧‧昇降手段 9‧‧‧ Lifting means
94‧‧‧支撐台 94‧‧‧ support
10‧‧‧封裝基板 10‧‧‧ package substrate
11‧‧‧熱擴散基板 11‧‧‧ thermal diffusion substrate
110‧‧‧表面 110‧‧‧ surface
12‧‧‧元件 12‧‧‧ Components
13‧‧‧樹脂層 13‧‧‧resin layer
14‧‧‧分割預定線 14‧‧‧ divided scheduled line
15‧‧‧切削溝 15‧‧‧ cutting groove
16‧‧‧樹脂殘存部 16‧‧‧Resin Residual Department
17‧‧‧樹脂切斷溝 17‧‧‧ resin cut trench
18‧‧‧基板切斷溝 18‧‧‧ substrate cutting groove
LB1、LB2‧‧‧雷射光線 LB1, LB2 ‧‧‧ laser light
X、Y、Z‧‧‧方向 X, Y, Z‧‧‧ directions
圖1是表示加工裝置之例的立體圖。 FIG. 1 is a perspective view showing an example of a processing apparatus.
圖2是表示封裝基板之例的放大剖面圖。 FIG. 2 is an enlarged sectional view showing an example of a package substrate.
圖3是表示切削溝形成步驟的放大剖面圖。 FIG. 3 is an enlarged sectional view showing a cutting groove forming step.
圖4是表示形成有切削溝之封裝基板的放大剖面圖。 FIG. 4 is an enlarged cross-sectional view showing a package substrate on which a cutting groove is formed.
圖5是表示樹脂切斷步驟的放大剖面圖。 Fig. 5 is an enlarged sectional view showing a resin cutting step.
圖6是表示分割步驟的放大剖面圖。 FIG. 6 is an enlarged cross-sectional view showing a division step.
圖1所示的加工裝置1具備:保持被加工物的保持機構2、對於保持在保持機構2之被加工物施行切削加工的切削機構3、及對於保持在保持機構2之被加工物施行雷射加工的第1雷射加工機構4以及第2雷射加工機構5。 The processing device 1 shown in FIG. 1 includes a holding mechanism 2 that holds a workpiece, a cutting mechanism 3 that performs a cutting process on a workpiece that is held by the holding mechanism 2, and a mine that performs a mine on the workpiece that is held by the holding mechanism 2. A first laser processing mechanism 4 and a second laser processing mechanism 5 for laser processing.
保持機構2具備:形成為平面狀的保持面20、縱橫地形成於與被加工物之用以分斷的分割預定線相對應之位置的溝21、及分別設置在由溝21所劃分之區域中的吸引孔22。保持機構2的下方配設有使保持機構2旋轉的旋轉機構23。 The holding mechanism 2 includes a holding surface 20 formed in a flat shape, grooves 21 formed vertically and horizontally at positions corresponding to the planned division lines for cutting the workpiece, and areas respectively provided in the areas divided by the grooves 21.中 的 孔 孔 22。 In the suction hole 22. A rotation mechanism 23 that rotates the holding mechanism 2 is disposed below the holding mechanism 2.
切削機構3具備:具有Y軸方向之軸心的轉軸30、可旋轉地支撐轉軸30的殼體31、及裝設於轉軸30之前端的切削刀32。 The cutting mechanism 3 includes a rotation shaft 30 having an axis center in the Y-axis direction, a housing 31 rotatably supporting the rotation shaft 30, and a cutting blade 32 mounted on a front end of the rotation shaft 30.
第1雷射加工機構4具備:第1照射頭40、及使輔助氣體流入第1照射頭40的輔助氣體導入部41。又,第2雷射加工機構5具備:第2照射頭50,及使輔助氣體流入第2照射頭50的輔助氣體導入部51。 The first laser processing mechanism 4 includes a first irradiation head 40 and an auxiliary gas introduction section 41 that allows an auxiliary gas to flow into the first irradiation head 40. In addition, the second laser processing mechanism 5 includes a second irradiation head 50 and an auxiliary gas introduction portion 51 that allows an auxiliary gas to flow into the second irradiation head 50.
保持機構2藉由加工進給機構6在X軸方向上加工進給。加工進給機構6具備:具有X軸方向之軸心的滾珠螺桿60、與滾珠螺桿60平行配置的一對導軌61、使滾珠螺 桿60轉動的馬達62、及在內部具備螺合於滾珠螺桿60的螺帽且底部滑接於導軌61的移動板63,並成為藉由馬達62使滾珠螺桿60轉動,而使移動板63受導軌61引導而在X軸方向上移動的構成。而且,藉由移動板63在X軸方向上移動,由移動板63所支撐的旋轉機構23以及保持機構2也會在X軸方向上移動。 The holding mechanism 2 is processed and fed in the X-axis direction by a processing feed mechanism 6. The processing feed mechanism 6 includes a ball screw 60 having an axial center in the X-axis direction, a pair of guide rails 61 arranged in parallel with the ball screw 60, and a ball screw. A motor 62 that rotates the lever 60, and a moving plate 63 having a nut screwed into the ball screw 60 inside and a bottom portion slidingly connected to the guide rail 61, and the ball screw 60 is rotated by the motor 62 to receive the moving plate 63. The guide rail 61 is configured to move in the X-axis direction. When the moving plate 63 moves in the X-axis direction, the rotation mechanism 23 and the holding mechanism 2 supported by the moving plate 63 also move in the X-axis direction.
加工進給機構6以及保持機構2藉由分度進給機構7在Y軸方向(與X軸方向水平正交的方向)上分度進給。分度進給機構7具備:具有Y軸方向之軸心的滾珠螺桿70、與滾珠螺桿70平行配置的一對導軌71、使滾珠螺桿70轉動的馬達72、及在內部具備螺合於滾珠螺桿70的螺帽且底部滑接於導軌71的移動板73,並成為藉由馬達72使滾珠螺桿70轉動,移動板73受導軌71引導而在Y軸方向上移動的構成。移動板73的上表面配置有加工進給機構6,藉由移動板73在Y軸方向上移動,加工進給機構6以及保持機構2也在Y軸方向上移動。 The machining feed mechanism 6 and the holding mechanism 2 are indexed in the Y-axis direction (a direction orthogonal to the X-axis direction) by the index feed mechanism 7. The indexing feed mechanism 7 includes a ball screw 70 having an axis center in the Y-axis direction, a pair of guide rails 71 arranged in parallel with the ball screw 70, a motor 72 for rotating the ball screw 70, and a ball screw screwed inside the ball screw 70. The bottom of the nut 70 is slidably connected to the moving plate 73 of the guide rail 71, and the ball screw 70 is rotated by the motor 72, and the moving plate 73 is guided by the guide rail 71 and moves in the Y-axis direction. A processing feed mechanism 6 is disposed on the upper surface of the moving plate 73. When the moving plate 73 moves in the Y-axis direction, the processing feed mechanism 6 and the holding mechanism 2 also move in the Y-axis direction.
切削機構3藉由切入進給機構8在Z軸方向(與X軸方向及Y軸方向正交的方向)上切入進給。切入進給機構8具備:具有Z軸方向之軸心的滾珠螺桿80、與滾珠螺桿80平行配置的一對導軌81、使滾珠螺桿80轉動的馬達82、及在內部具備螺合於滾珠螺桿80的螺帽且側部滑接於導軌81的昇降板83,並成為藉由馬達82使滾珠螺桿80轉動,昇降板83受導軌81引導而在Z軸方向上昇降的構成。昇降板83的側面固定有切削機構3,藉由昇降板83在Z軸方向上昇降, 切削機構3也在Z軸方向上昇降。 The cutting mechanism 3 performs a cutting feed in the Z-axis direction (a direction orthogonal to the X-axis direction and the Y-axis direction) by the cutting feed mechanism 8. The plunging and feeding mechanism 8 includes a ball screw 80 having an axial center in the Z-axis direction, a pair of guide rails 81 arranged in parallel with the ball screw 80, a motor 82 for rotating the ball screw 80, and a ball screw 80 screwed into the ball screw 80 inside. The side of the nut is slidably connected to the lifting plate 83 of the guide rail 81, and the ball screw 80 is rotated by the motor 82. The lifting plate 83 is guided by the guide rail 81 and moves up and down in the Z-axis direction. The cutting mechanism 3 is fixed to the side of the lifting plate 83, and the lifting plate 83 moves up and down in the Z-axis direction. The cutting mechanism 3 also moves up and down in the Z-axis direction.
第1雷射加工機構4以及第2雷射加工機構5藉由昇降機構9支撐為可昇降。昇降機構9具備:具有Z軸方向之軸心的滾珠螺桿90、與滾珠螺桿90平行配置的一對導軌91、使滾珠螺桿90轉動的馬達92、及在內部具備螺合於滾珠螺桿90的螺帽且側部滑接於導軌91的昇降板93,並成為藉由馬達92使滾珠螺桿90轉動,昇降板93受導軌91引導而在Z軸方向上昇降的構成。第1雷射加工機構4以及第2雷射加工機構5藉由支撐台94固定於昇降板93的側面,藉由昇降板93在Z軸方向上昇降,第1雷射加工機構4以及第2雷射加工機構5也在Z軸方向上移動。 The first laser processing mechanism 4 and the second laser processing mechanism 5 are supported by a lifting mechanism 9 so as to be movable up and down. The elevating mechanism 9 includes a ball screw 90 having an axial center in the Z-axis direction, a pair of guide rails 91 arranged in parallel with the ball screw 90, a motor 92 for rotating the ball screw 90, and a screw screwed into the ball screw 90 inside The cap and the side are slidably connected to the lifting plate 93 of the guide rail 91, and the ball screw 90 is rotated by the motor 92, and the lifting plate 93 is guided by the guide rail 91 to move up and down in the Z-axis direction. The first laser processing mechanism 4 and the second laser processing mechanism 5 are fixed to the side of the lifting plate 93 by a support table 94, and are raised and lowered in the Z-axis direction by the lifting plate 93. The first laser processing mechanism 4 and the second laser processing mechanism 5 The laser processing mechanism 5 also moves in the Z-axis direction.
以下使用如此構成的加工裝置1,說明將圖2所示之封裝基板10加工的方法。該封裝基板10是由熱擴散基板11、配置於熱擴散基板11之表面110的複數個元件12、及以樹脂被覆複數個元件12的樹脂層(被覆層)13所構成。熱擴散基板11是由例如不鏽鋼、銅等所形成,有散熱性高且價位便宜的金屬基板或氧化鋁陶瓷基板。另一方面,構成樹脂層13的樹脂是例如環氧樹脂、矽樹脂等,其厚度為例如1mm左右。 A method of processing the package substrate 10 shown in FIG. 2 will be described below using the processing device 1 configured as described above. The package substrate 10 includes a thermal diffusion substrate 11, a plurality of elements 12 arranged on a surface 110 of the thermal diffusion substrate 11, and a resin layer (coating layer) 13 that covers the plurality of elements 12 with a resin. The thermal diffusion substrate 11 is made of, for example, stainless steel, copper, or the like, and has a metal substrate or an alumina ceramic substrate that has high heat dissipation and is inexpensive. On the other hand, the resin constituting the resin layer 13 is, for example, epoxy resin, silicone resin, or the like, and its thickness is, for example, about 1 mm.
各元件12配置於在熱擴散基板11的表面110以形成格子狀之分割預定線14所劃分的區域中。該封裝基板10藉由沿著分割預定線14分斷,而分割成以一個個的元件12為單位的封裝元件。 Each element 12 is disposed in a region divided by a predetermined division line 14 formed on the surface 110 of the heat diffusion substrate 11 in a grid pattern. The package substrate 10 is divided along package division lines 14 to be divided into package elements each having a single element 12 as a unit.
(1)切削溝形成步驟 (1) Cutting groove formation step
如圖2及圖3所示,封裝基板10之熱擴散基板11側保持於保持機構2的保持面20,成為樹脂層13的上表面露出的狀態。而且,如圖3所示,使構成圖1所示之切削機構3的切削刀32高速旋轉且定位在分割預定線14的上方,使切削刀32切入樹脂層13,且使切削刀32下降至切削刀32的下端未達熱擴散基板11的深度,並且藉由圖1所示的加工進給機構6,在X軸方向上加工進給保持機構2。如此一來,如圖4所示,沿著分割預定線14形成切削溝15。藉由使切削刀32切入至未達熱擴散基板11的深度,而在樹脂層13,於切削溝15的下方形成為未被切削刀32切削的部分、亦即樹脂殘存部16。本步驟是以例如以下的加工條件進行。 As shown in FIGS. 2 and 3, the heat diffusion substrate 11 side of the package substrate 10 is held on the holding surface 20 of the holding mechanism 2, and the upper surface of the resin layer 13 is exposed. Further, as shown in FIG. 3, the cutting blade 32 constituting the cutting mechanism 3 shown in FIG. 1 is rotated at a high speed and positioned above the planned division line 14, the cutting blade 32 is cut into the resin layer 13, and the cutting blade 32 is lowered to The lower end of the cutting blade 32 does not reach the depth of the heat diffusion substrate 11, and the feed holding mechanism 2 is processed in the X-axis direction by the processing feed mechanism 6 shown in FIG. 1. In this way, as shown in FIG. 4, the cutting groove 15 is formed along the planned division line 14. By cutting the cutting blade 32 to a depth not reaching the heat diffusion substrate 11, the resin layer 13 is formed below the cutting groove 15 as a portion that is not cut by the cutting blade 32, that is, the resin residual portion 16. This step is performed under the following processing conditions, for example.
切削刀的厚度:200[μm] Cutting tool thickness: 200 [ μ m]
切削刀的直徑:52[mm] Cutter diameter: 52 [mm]
切削刀之旋轉速度:20000[rpm] Rotating speed of cutter: 20000 [rpm]
加工進給速度:100[mm/秒] Processing feed rate: 100 [mm / s]
藉由圖1所示的分度進給機構7,而在Y軸方向上以相鄰之分割預定線14間的間隔一一地分度進給切削機構3,並沿著同方向之所有的分割預定線14進行如此之切削後,使保持機構2旋轉90度後再進行同樣的切削,藉此沿著所有的分割預定線14形成切削溝15。 With the indexing feed mechanism 7 shown in FIG. 1, the cutting mechanism 3 is indexed and fed in the Y-axis direction at intervals between the adjacent predetermined division lines 14 and along all the same directions. After cutting the division line 14 in this way, the holding mechanism 2 is rotated 90 degrees and then the same cutting is performed, thereby forming cutting grooves 15 along all the division lines 14.
在切削溝形成步驟中,由於使切削刀32切入至未達熱擴散基板11的深度,藉此切削刀不會切入熱擴散基板11,故能夠防止伴隨著切削阻力增加而切削速度降低。 In the cutting groove forming step, the cutting blade 32 is cut to a depth not reaching the thermal diffusion substrate 11, so that the cutting blade does not cut into the thermal diffusion substrate 11. Therefore, it is possible to prevent a reduction in cutting speed due to an increase in cutting resistance.
(2)樹脂切斷步驟 (2) Resin cutting step
其次,如圖5所示,在以保持機構2保持實施過切削溝形成步驟的封裝基板10之熱擴散基板11側的狀態下,將構成第1雷射加工機構4的第1雷射照射頭40定位在分割預定線14的上方。然後,通過聚光透鏡42沿著形成於分割預定線14的切削溝15,對樹脂層13照射對構成樹脂層13之樹脂具有吸收性之波長的雷射光線LB1。照射雷射光線LB1時,從輔助氣體導入部41導入輔助氣體,並使其從第1照射頭40噴出。本步驟是以例如以下的加工條件進行。 Next, as shown in FIG. 5, the first laser irradiation head constituting the first laser processing mechanism 4 is held in a state where the heat diffusion substrate 11 side of the package substrate 10 subjected to the cutting groove formation step is held by the holding mechanism 2. 40 is positioned above the planned division line 14. Then, the condenser lens 42 is irradiated with the laser light LB1 having a wavelength which is absorptive to the resin constituting the resin layer 13 along the cutting groove 15 formed on the predetermined division line 14. When the laser beam LB1 is irradiated, the auxiliary gas is introduced from the auxiliary gas introduction section 41 and is ejected from the first irradiation head 40. This step is performed under the following processing conditions, for example.
雷射光線的波長:CO2雷射(9.2~10.6[μm]) Laser light wavelength: CO 2 laser (9.2 ~ 10.6 [ μ m])
重複頻率:100[kHz] Repetition frequency: 100 [kHz]
脈衝寬度:10[ns]~10[μs] Pulse width: 10 [ns] ~ 10 [ μ s]
平均輸出:40[W] Average output: 40 [W]
聚光點徑:φ 100[μm] Condensing spot diameter: φ 100 [ μ m]
加工進給速度:600[mm/秒] Processing feed rate: 600 [mm / s]
輔助氣體:1[MPa] Auxiliary gas: 1 [MPa]
雷射光線LB1聚光在樹脂層13的樹脂殘存部16上。而且,以圖1所示的加工進給機構6在X軸方向上加工進給保持機構2。如此一來,沿著分割預定線14進行燒蝕加工,而形成樹脂切斷溝17。由於雷射光線LB1對樹脂具有吸收性,且相對於熱擴散基板11吸收較小,因此可僅加工樹脂殘存部16而形成樹脂切斷溝17,切斷樹脂層13,而不對熱擴散基板11進行燒蝕加工。藉由樹脂層13被切斷,熱擴散基板11的表面110從此部分露出。 The laser light LB1 is focused on the resin remaining portion 16 of the resin layer 13. Further, the processing feed holding mechanism 2 is processed in the X-axis direction by the processing feed mechanism 6 shown in FIG. 1. In this way, the ablation process is performed along the planned division line 14 to form a resin cutting groove 17. Since the laser light LB1 is absorbent to the resin and absorbs less than the thermal diffusion substrate 11, it is possible to form the resin cutting groove 17 and the resin layer 13 by processing only the resin remaining portion 16 without cutting the resin layer 13. Perform ablation processing. When the resin layer 13 is cut, the surface 110 of the thermal diffusion substrate 11 is exposed from this portion.
藉由圖1所示的分度進給機構7,而在Y軸方向上 以相鄰之分割預定線14間的間隔一一地分度進給切削機構3,並沿著同方向之所有的分割預定線14進行如此之雷射加工後,使保持機構2旋轉90度後再進行同樣的切削,藉此沿著所有的分割預定線14形成樹脂切斷溝17。 By the indexing feed mechanism 7 shown in FIG. 1, in the Y-axis direction After cutting the feed mechanism 3 at intervals between adjacent division lines 14 and performing laser processing along all the division lines 14 in the same direction, the holding mechanism 2 is rotated 90 degrees. The same cutting is performed again to form the resin cutting grooves 17 along all the division lines 14.
從樹脂切斷步驟中可防止樹脂切斷溝17的兩側面燒焦的觀點來看,由於不太能夠提高雷射光線的輸出,因此也會必須使保持機構2來回數次並進行雷射光線LB1之照射,但由於在切削溝形成步驟中已經預先切削樹脂層13,因此相較於不實施切削溝形成步驟而只以雷射加工切斷樹脂的情況,可縮短切斷樹脂所需的時間。 From the viewpoint of preventing the both sides of the resin cutting groove 17 from being burnt in the resin cutting step, since the output of laser light cannot be improved, the holding mechanism 2 must also be moved back and forth several times to perform the laser light. Irradiation of LB1, but the resin layer 13 has been cut in advance in the cutting groove forming step, so the time required to cut the resin can be shortened compared to the case where the resin is cut by laser processing without the cutting groove forming step. .
(3)分割步驟 (3) Segmentation steps
其次,如圖6所示,在以保持機構2保持實施過樹脂切斷步驟的封裝基板10之熱擴散基板11側的狀態下,將構成第2雷射加工機構5的第2雷射頭50定位在分割預定線14的上方。然後,通過聚光透鏡52沿著形成於分割預定線14的樹脂切斷溝17,照射對熱擴散基板11具有吸收性之波長的雷射光線LB2,並沿著分割預定線14切斷熱擴散基板11。照射雷射光線LB2時,從輔助氣體導入部51導入輔助氣體,並使其從第2照射頭50噴出。本步驟是以例如以下的加工條件進行。 Next, as shown in FIG. 6, the second laser head 50 constituting the second laser processing mechanism 5 will be held in a state where the heat diffusion substrate 11 side of the package substrate 10 subjected to the resin cutting step is held by the holding mechanism 2. It is positioned above the planned division line 14. Then, the condenser lens 52 radiates laser light LB2 having a wavelength absorptive to the thermal diffusion substrate 11 along the resin cutting groove 17 formed on the planned division line 14, and cuts the thermal diffusion along the planned division line 14. Substrate 11. When the laser beam LB2 is irradiated, the auxiliary gas is introduced from the auxiliary gas introduction portion 51 and is ejected from the second irradiation head 50. This step is performed under the following processing conditions, for example.
雷射光線的波長:YAG雷射或光纖雷射(fiber laser)(1.06[μm]) Laser light wavelength: YAG laser or fiber laser (1.06 [ μ m])
重複頻率:20[kHz] Repetition frequency: 20 [kHz]
脈衝寬度:可變 Pulse width: variable
平均輸出:150~500[W] Average output: 150 ~ 500 [W]
聚光點徑:φ 50[μm] Condensing spot diameter: φ 50 [ μ m]
加工進給速度:160[mm/秒] Processing feed speed: 160 [mm / s]
輔助氣體:1[MPa] Auxiliary gas: 1 [MPa]
雷射光線的平均輸出、脈衝寬度依據熱擴散基板11的材質或厚度而變更。例如,當熱擴散基板11是由容易傳熱的銅所構成時,為了抑制雷射光線的輸出能量所引起的熱傳導,可縮短脈衝寬度,甚至加大平均輸出。又,熱擴散基板11的厚度為100~300μm,只要厚度變厚,就可以加大平均輸出或增加脈衝寬度,以進行加工。 The average output and pulse width of the laser light are changed depending on the material or thickness of the thermal diffusion substrate 11. For example, when the thermal diffusion substrate 11 is made of copper that is easy to transfer heat, in order to suppress the heat conduction caused by the output energy of the laser light, the pulse width can be shortened, or the average output can be increased. In addition, the thickness of the thermal diffusion substrate 11 is 100 to 300 μm . As long as the thickness is increased, the average output or the pulse width can be increased for processing.
雷射光線LB2聚光於樹脂切斷溝17之下方的熱擴散基板11。然後,以圖1所示的加工進給機構6在X軸方向上加工進給保持機構2。如此一來,就可以沿著分割預定線14形成基板切斷溝18。此時,由於雷射加工所產生的熔渣會落下至溝21,因此不會附着於基板切斷溝18的側面等。 The laser light LB2 is focused on the heat diffusion substrate 11 below the resin cut groove 17. Then, the processing feed holding mechanism 2 is processed in the X-axis direction by the processing feed mechanism 6 shown in FIG. 1. In this way, the substrate cutting groove 18 can be formed along the planned division line 14. At this time, since the slag generated by the laser processing falls to the groove 21, it does not adhere to the side surface of the substrate cutting groove 18 or the like.
藉由圖1所示的分度進給機構7,而在Y軸方向上以相鄰之分割預定線14的間隔一一地分度進給保持機構2,並沿著延伸於X軸方向之所有的分割預定線14進行如此之雷射加工後,只要藉由使保持機構2旋轉90度後再進行同樣的雷射加工,而沿著所有的分割預定線14形成基板切斷溝18時,封裝基板10就會被分割成以一個個的元件12為單位的封裝元件。 By the indexing feed mechanism 7 shown in FIG. 1, the feed holding mechanism 2 is indexed one by one in the Y-axis direction at intervals of adjacent predetermined division lines 14 and extends along the X-axis direction. After all of the division lines 14 are laser-processed as described above, when the substrate cutting grooves 18 are formed along all the division lines 14 by performing the same laser processing after rotating the holding mechanism 2 by 90 degrees, The package substrate 10 is divided into package elements with each element 12 as a unit.
在分割步驟中,由於不使用切削刀,而是以雷射加工切斷熱擴散基板11,因此可防止基板切斷溝18的兩側 面發生毛邊。又,在分割步驟中,由於能夠提高雷射光線LB2的輸出,因此能夠以1次的加工進給,形成基板切斷溝18。 In the dividing step, since the thermal diffusion substrate 11 is cut by laser processing without using a cutter, it is possible to prevent the substrate from cutting both sides of the groove 18 Burrs occur on the face. Further, in the division step, the output of the laser beam LB2 can be increased, so that the substrate cutting groove 18 can be formed in one processing feed.
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JP2018113281A (en) * | 2017-01-06 | 2018-07-19 | 株式会社ディスコ | Processing method of resin package substrate |
JP2018176399A (en) * | 2017-04-21 | 2018-11-15 | 株式会社ディスコ | Groove formation method for metal substrate |
JP6821261B2 (en) * | 2017-04-21 | 2021-01-27 | 株式会社ディスコ | Processing method of work piece |
JP6890893B2 (en) * | 2017-08-08 | 2021-06-18 | 株式会社ディスコ | How to process a substrate with exposed metal |
JP7009027B2 (en) * | 2017-09-08 | 2022-01-25 | 株式会社ディスコ | Wafer processing method |
TWI695459B (en) * | 2018-09-07 | 2020-06-01 | 矽品精密工業股份有限公司 | Electronic package structure and manufacturing method thereof |
JP7190295B2 (en) * | 2018-09-13 | 2022-12-15 | 株式会社ディスコ | Cutting device and package substrate processing method |
CN111047970B (en) * | 2019-11-21 | 2022-04-19 | 昆山国显光电有限公司 | Display panel and display panel mother board |
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