CN105826180A - Method and device for breaking image sensor-used wafer laminated body - Google Patents
Method and device for breaking image sensor-used wafer laminated body Download PDFInfo
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- CN105826180A CN105826180A CN201510009652.6A CN201510009652A CN105826180A CN 105826180 A CN105826180 A CN 105826180A CN 201510009652 A CN201510009652 A CN 201510009652A CN 105826180 A CN105826180 A CN 105826180A
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Abstract
The invention provides a breaking method and a breaking device for image sensor wafer packaging. In the image sensor-used wafer laminated body (W) breaking method, a glass wafer (1) and a silicon wafer (2) are laminated by a resin layer (4) configured around each photodiode forming area (3) to form the image sensor-used wafer laminated body (W). In the breaking method, for example, a ruling wheel (10) presses on one hand and on the other hand rotates along a breaking scheduled line on the glass wafer, and thus, a ruling line (S) formed by a crack penetrated along a thickness direction is thus formed; then, a breaking rod (14) is used for pressing along the ruling line from the lower side of the silicon wafer, the wafer laminated body is bent to break the glass wafer, and the silicon wafer is also broken. According to the above technical scheme, the breaking method and the device do not use a cutting saw, and a dry simple method is adopted to effectively and perfectly complete breaking.
Description
Technical field
The present invention is about a kind of wafer-level packaging (waferlevelpackage for patterning is formed CMOS；WLP) wafer laminate carries out method for dividing and the break-up device of singualtion.
Background technology
In recent years, in paying attention to the various miniature electric field of machines such as low electric power, high function, the high long-pending mobile phone of body, digital camera, optical mouse, the use of CMOS increases rapidly.
Fig. 5 is the profile of the configuration example of wafer-level packaging (unit article of the chip size) W1 being diagrammatically denoted by CMOS.Wafer-level packaging W1, has the lamination structure engaged in the way of clipping resin next door 4 by (through singualtion) glass wafer 1 with (through singualtion) Silicon Wafer 2.
On Silicon Wafer 2, (side, composition surface) is formed with optical diode (photodiode) region (sensing region) 3, and configure in the way of about in lattice shape by resin next door 4, make the inner space being provided with optical diode region 3 become airtight conditions whereby.Further, being formed with metal gasket 5 on (outside optical diode region 3) Silicon Wafer 2, the adjacent underneath in the part being formed with this metal gasket 5 is formed with the through hole (through hole) 6 of up/down perforation Silicon Wafer 2.Fill, at through hole 6, the conduction material 7 that electrical conductivity is good, and be formed with welding projection (bump) 8 in through hole 6 lower end.So, through hole 6 will be formed and fill conduction material 7 to carry out the composition the most straight-through silicon wafer perforation (ThroughSiliconVia being electrically connected；TSV).
It addition, below above-mentioned welding projection 8, joint has been patterned with (omitting diagram) such as the PCB substrate of set electric circuit.
The unit article of chip size i.e. wafer-level packaging W1, as shown in FIG. 6 and 7, on the wafer laminate W that the large-area glass wafer 1 becoming parent is engaged by resin next door 4 with bulk silicon wafer 2, distinguish in lattice shape by disjunction preset lines L extended in X-Y direction and pattern formation multiple, and by along this disjunction preset lines L disjunction this wafer laminate W, and become wafer-level packaging W1 of (through singualtion) chip size.
It addition, become in the processing of wafer-level packaging goods at disjunction Silicon Wafer, comprise the processing of CMOS goods, existing known be to use the cast-cutting saw (dicingsaw) as disclosed in patent documentation 1～patent documentation 4 in the past.Cast-cutting saw, possesses the rotating blade carrying out high speed rotating, and is configured to that rotating blade injection is cleaned rotating blade and cool down with the cutting fluid of produced cutting swarf when cutting while cutting.
Patent documentation 1: Japanese Unexamined Patent Publication 5-090403 publication
Patent documentation 2: Japanese Unexamined Patent Publication 6-244279 publication
Patent documentation 3: Japanese Unexamined Patent Publication 2002-224929 publication
Patent documentation 4: Japanese Unexamined Patent Publication 2003-051464 publication
Above-mentioned cast-cutting saw, due to be by use rotating blade cutting carry out disjunction, therefore cutting swarf produces in large quantities, even if having utilized cutting fluid to clean, there is also cutting fluid part residual or make because dispersing when cutting cutting swarf be attached to the situation of package surface etc., and becoming quality or the bigger reason of yield reduction.Additionally, due to must have for the supply of cutting fluid or the mechanism of devil liquor recovery or pipe arrangement, hence in so that unit scale becomes big.Additionally, due to be disjunction glass wafer by cutting, the situation therefore producing little chip (shortcoming) in cutting face is quite a lot of, and cannot obtain more perfect disjunction face.Additionally, due to the sword front end carrying out the rotating blade of high speed rotating is to be formed with zigzag, therefore the abrasion of sword front end or damaged easily generation and service life shorter.Further, owing to the thickness of rotating blade and cannot be set as relatively thin from the standpoint of intensity, even and path person also forms the thickness of more than 60 μm, therefore there are first-class problem points that is that cutting width is not only necessity and that also become the factor that restriction material effectively utilizes.
Summary of the invention
The present invention seeks the solution of above-mentioned existing known problem, purpose is to provide a kind of cast-cutting saw that at least can not use in the disjunction of glass wafer, and has effect ground with the simple maneuver of dry type and more ideally carry out the method for dividing of the image sensor wafer of disjunction, encapsulation.
The object of the invention to solve the technical problems is to use following technical scheme to realize.Method for dividing according to a kind of image sensor wafer laminate that the present invention proposes, this image sensor wafer laminate, be have by glass wafer and in length and breadth pattern be formed with multiple optical diode and form the Silicon Wafer in region, by form the structure of the resin bed laminating configured by the way of region around this each optical diode；This method for dividing, forms score line along the disjunction preset lines above this glass wafer, then, presses with brisement bar along this score line by from the following side of this Silicon Wafer, disjunction glass wafer, and also disjunction Silicon Wafer.
The object of the invention to solve the technical problems also can be applied to the following technical measures to achieve further.
Aforesaid method for dividing, the most also can be to this Silicon Wafer below, in the position at this back side, disjunction preset lines position become above this glass wafer, press with brisement bar after being pre-formed grooving.
The object of the invention to solve the technical problems realizes the most by the following technical solutions.Break-up device according to a kind of image sensor wafer laminate that the present invention proposes, this image sensor wafer laminate, be have by glass wafer and in length and breadth pattern be formed with multiple optical diode and form the Silicon Wafer in region, by form the structure of the resin bed laminating configured by the way of region around this each optical diode；This break-up device, has the disjunction preset lines above this glass wafer and forms the score line formation device of score line and carry out pressing and the break-up device of this glass wafer of disjunction and also this Silicon Wafer of disjunction with brisement bar by from the following side of this Silicon Wafer along this score line.
The object of the invention to solve the technical problems also can be applied to the following technical measures to achieve further.
Aforesaid break-up device, it is further, it is possible to having grooving and form device, this grooving forms device, below this Silicon Wafer, in the position at this back side, disjunction preset lines position become above this glass wafer, is pre-formed grooving.
According to the present invention, due to when carrying out disjunction with brisement bar, the crackle of glass wafer is impregnated with and disjunction toward thickness direction, therefore without needing cutting width as the existing known situation utilizing cast-cutting saw to carry out glass wafer cutting, and can effectively utilize material, and the generation of chip etc. can be suppressed, and can be with more perfect section disjunction.Additionally, due to do not produce cutting swarf, therefore, it is possible to do not produce the quality deterioration or defective products caused because of cutting swarf attachment.
The most in the present invention, do not carry out use cutting fluid as glass wafer cutting such as the existing known cast-cutting saw that utilizes, but in the environment of dry disjunction glass wafer, therefore have and can omit for cutting fluid supply or the mechanism of devil liquor recovery or pipe arrangement, and also can omit cut off afterwash or drying steps and can the exquisitenessization ground effect of constituent apparatus.
In above-mentioned method for dividing, it is possible to below this Silicon Wafer, in the position at this back side, disjunction preset lines position become above this glass wafer, press with brisement bar after being pre-formed grooving.The grooving of this Silicon Wafer also can be formed by cast-cutting saw.
Whereby, when utilizing this brisement bar to carry out glass wafer disjunction, it is also possible to easily from this groove and with more perfect disjunction face disjunction Silicon Wafer.
It addition, in forming TSV wafer laminate, also form this grooving by when processing the step of this TSV through hole, and the procedure of processing of grooving can be simplified.
Accompanying drawing explanation
Fig. 1 represents the graphic of the method for dividing first stage of the present invention.
Fig. 2 represents the graphic of the method for dividing second stage of the present invention.
Fig. 3 represents the graphic of other embodiments of Fig. 2.
Fig. 4 (a) and Fig. 4 (b) represents that the scribe wheel used in the present invention keeps the graphic of tool part with it.
Fig. 5 represents the profile of an example of CMOS wafer-level packaging.
Fig. 6 represents the profile of a part for the CMOS wafer laminate becoming mother metal.
Fig. 7 represents the top view schematically of the CMOS wafer laminate of Fig. 6.
[main element symbol description]
L: disjunction preset lines
S: score line
W: wafer laminate
W1: wafer-level packaging
1: glass wafer
2: Silicon Wafer
10: scribe wheel
10a: sword front end
14: brisement bar
15: groove
Detailed description of the invention
Hereinafter, according to the details of the method for dividing of the image sensor wafer laminate of the graphic explanation present invention.
Fig. 1 represents the method for dividing first stage of the present invention, i.e. represents a part of section of the CMOS wafer laminate W becoming processing object.The structure of wafer laminate W, the structure substantially the same with shown in above-mentioned Fig. 5～Fig. 7.
That is, by becoming the glass wafer 1 of the large area (the most a diameter of 8 inches (note: 1 inch=2.54 centimetres)) of parent and being configured at the Silicon Wafer 2 of side below, engaged by cancellate resin next door 4.
On Silicon Wafer 2, (side, composition surface) is provided with optical diode and forms region (sensing region) 3.Form region 3 at optical diode and be formed with light diode array, the function using the sensitive surface as image sensor.And, formed near region 3 at optical diode, be formed with metal gasket 5, in the adjacent underneath of the part being formed with this metal gasket 5, be formed with the through hole (through hole) 6 of up/down perforation Silicon Wafer 2.Fill electrical conductivity good conduction material 7 (TSV) at through hole 6, be formed with welding projection 8 in through hole 6 lower end.It addition, below above-mentioned welding projection 8, joint has been patterned with (omitting diagram) such as the PCB substrate of set electric circuit.
This CMOS wafer laminate W, as shown in Figure 7 by the singualtion along the cancellate disjunction preset lines L disjunction extended in X-Y direction, takes out i.e. wafer-level packaging W1 of the unit article of chip size.
Illustrate then for disjunction processing sequence.When along disjunction preset lines L disjunction wafer laminate W, first, the score line that scribe wheel 10 as shown in Fig. 4 (a) and Fig. 4 (b) is made up of crackle (be full of cracks being impregnated with toward thickness direction) is such as used in the Surface Machining of glass wafer 1.
Scribe wheel 10, is to be formed with the material that the tool characteristics such as superhard alloy or sintering diamond are good, and is formed with sword front end 10a at circumference crest line (outer peripheral face).Specifically, though preferably using a diameter of 1～6mm, preferably 1.5～4mm, and sword toe angle is 85～150 degree, preferably 105～140 degree, but can properly select according to the thickness of processed glass wafer 1 or kind.
This scribe wheel 10, in being rotatably supported at holding tool 11, and is held in engraving head (omitting diagram) by elevating mechanism 12.Engraving head, is can be formed in the way of the top of level mounting wafer laminate W platen (omitting diagram) is moved along disjunction preset lines L direction.
And, as it is shown in figure 1, rotate by making scribe wheel 10 carry out pressing on the surface of glass wafer 1 along disjunction preset lines, and form score line S being made up of crackle at glass wafer 1.This score line S, is preferably formed with the crackle being impregnated with to the half of glass wafer 1 thickness.It addition, score line S forms the outside in the resin next door 4 in wafer-level packaging W1.
Glass wafer 1 is formed score line, also can be by utilizing laser (such as, ultraviolet (UV) laser) irradiate and formed at substrate surface and peel off (formation groove) or modify region, be internally formed modification region at substrate and carry out, also can carry out with cooling down generation thermal stress be full of cracks progress by utilizing laser (such as, infrared ray (IR) laser) to heat.
That is, the score line of glass wafer 1, can be positioned at inside glass wafer 1 glass wafer 1 irradiating laser by the focus making laser, become the modification region of multiphoton absorption to be formed in glass wafer 1 inside along disjunction preset lines L-shaped.Additionally, the score line of glass wafer 1, also can be formed by the initial stage be full of cracks progress method utilizing thermal stress distribution.In the method, such as, the surface of glass wafer 1 is formed initial stage be full of cracks (triggering crackle), scan laser from initial stage be full of cracks and be irradiated heating, and follow thereafter to heating region from the nozzle injection coolant of cooling body.Initial stage be full of cracks (crackle) can be made to form score line along disjunction preset lines L progress on the surface of glass wafer 1 by the thermal stress distribution (Temperature Distribution) in the substrate thickness direction now produced by the produced compression stress of heating and the produced stretching stress of cooling rapidly then.
It addition, in the present invention, as above, comprise the multiphoton absorption that formed by laser substrate surface or be internally formed modification region, by peeling off the groove formed and being chapped by produced by thermal stress distribution, be referred to as " score line ".
Then, in the second stage shown in Fig. 2, reversion substrate (wafer laminate W), lateral surface (with side, composition surface opposing face) at glass wafer 1, the pair of right and left pedestal 13,13 that configuration extends along its both sides in the way of clipping score line S, presses with the brisement bar 14 of strip towards score line S from the exterior side (with composition surface opposing face) of Silicon Wafer 2.In this situation, also the lateral surface relative to score line S (with composition surface opposing face) at Silicon Wafer 2 groove 15 can be pre-machined along disjunction preset lines L.This groove 15, such as, available cast-cutting saw is formed.Additionally, this groove 15, if at such as Silicon Wafer 2 to wafer laminate W, during with groove processing technology processing through holes 6 such as RIE (Reactive-ionetching), utilizing identical process technology to concurrently form, then can be processed efficiently.
Pressing by this brisement bar 14, glass wafer 1 and Silicon Wafer 2 are bent toward with pressing side in opposite direction, score line S that is the crackle of glass wafer 1 are impregnated with and disjunction glass wafer 1 toward the thickness overall situation, and Silicon Wafer 2 is also along groove 15 disjunction, whereby by wafer-level packaging W1 through singualtion along the complete disjunction of disjunction preset lines L.
In this disjunction, glass wafer 1, is to become broken in the way of the crackle of score line S is impregnated with toward thickness direction, therefore, it is possible to suppression such as the existing known generation utilizing cast-cutting saw to carry out cutting the chip etc. of situation, it is possible to more perfect section disjunction.Additionally, due to be also provided with groove 15 along disjunction preset lines L in advance at Silicon Wafer 2, therefore it also is able to more perfect disjunction face, Silicon Wafer 2 is carried out disjunction along groove 15.
Additionally, Silicon Wafer 2, in most situations (by grinding), its thickness is 25 μm～100 μm, the thinnest, even if being therefore not provided with groove 15 described above, it is also possible to bend produced by the pressing of brisement bar 14 by utilizing, and with the disjunction of glass wafer 1 simultaneously and easily disjunction.Therefore, it is possible to omit the step of processing groove 15.
As above, man-hour is added, owing to the crackle of score line S of glass wafer 1 is impregnated with and disjunction toward thickness direction, therefore utilizing brisement bar 14 to carry out brisement, without needing cutting width as the situation that existing known glass wafer utilizes cast-cutting saw to carry out machining, and can effectively utilize material.Additionally, due to do not produce cutting swarf, therefore, it is possible to do not produce the quality deterioration or defective products caused because of cutting swarf attachment.The most in the present invention, as as existing known glass wafer utilizes cast-cutting saw cutting, do not use cutting fluid, but in the environment of dry disjunction glass wafer, therefore can omit for cutting fluid supply or the mechanism of devil liquor recovery or pipe arrangement, it is possible to exquisitenessization ground constituent apparatus.
In the present invention, man-hour is added, it is possible to replace and bear the pair of right and left pedestal 13,13 of glass wafer 1 utilizing brisement bar 14 to carry out brisement, and as shown in Figure 3, being configured to fender 16 connect with the face of glass wafer 1, this fender 16 is the thickness with glass wafer 1 degree of flexibility that can cave in.
Above, though the representational embodiment having been for the present invention is illustrated, but the present invention be not specific to above-mentioned embodiment, can reaching this purpose, without departing from being suitably modified in the range of claim, changing.
The method for dividing of the present invention, may use the disjunction being fitted with glass wafer with the wafer laminate of Silicon Wafer.
The above, it it is only presently preferred embodiments of the present invention, not the present invention is done any pro forma restriction, although the present invention is disclosed above with preferred embodiment, but it is not limited to the present invention, any those skilled in the art, in the range of without departing from technical solution of the present invention, when the technology contents of available the disclosure above makes a little change or is modified to the Equivalent embodiments of equivalent variations, in every case it is the content without departing from technical solution of the present invention, the technical spirit of the foundation present invention is to any simple modification made for any of the above embodiments, equivalent variations and modification, all still fall within the range of technical solution of the present invention.
Claims (4)
1. the image sensor method for dividing of wafer laminate, this image sensor wafer laminate, be have by glass wafer and in length and breadth pattern be formed with multiple optical diode and form the Silicon Wafer in region, by form the structure of the resin bed laminating configured by the way of region around this each optical diode；It is characterized in that:
Score line is formed along the disjunction preset lines above this glass wafer；
Then, press with brisement bar along this score line by from the following side of this Silicon Wafer, and this glass wafer of disjunction, and also this Silicon Wafer of disjunction.
The method for dividing of image sensor wafer laminate the most according to claim 1, it is characterized in that wherein below this Silicon Wafer, in the position at this back side, disjunction preset lines position become above this glass wafer, press with brisement bar after being pre-formed grooving.
3. the image sensor break-up device of wafer laminate, this image sensor wafer laminate, be have by glass wafer and in length and breadth pattern be formed with multiple optical diode and form the Silicon Wafer in region, by form the structure of the resin bed laminating configured by the way of region around this each optical diode；It is characterized in that having:
Along above this glass wafer disjunction preset lines formed score line score line formed device and
Carry out pressing and the break-up device of this glass wafer of disjunction and also this Silicon Wafer of disjunction with brisement bar by from the following side of this Silicon Wafer along this score line.
The break-up device of image sensor wafer laminate the most according to claim 3, it is characterized in that it has grooving further and forms device, this grooving forms device, below this Silicon Wafer, in the position at this back side, disjunction preset lines position become above this glass wafer, it is pre-formed grooving.
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| CN201510009652.6A CN105826180A (en) | 2015-01-08 | 2015-01-08 | Method and device for breaking image sensor-used wafer laminated body |
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| CN201510009652.6A CN105826180A (en) | 2015-01-08 | 2015-01-08 | Method and device for breaking image sensor-used wafer laminated body |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN1646282A (en) * | 2002-04-01 | 2005-07-27 | 三星钻石工业股份有限公司 | Parting method for fragile material substrate and parting device using the method |
| US20130149802A1 (en) * | 2011-12-12 | 2013-06-13 | Canon Kabushiki Kaisha | Method of manufacturing semiconductor element |
| CN104425527A (en) * | 2013-08-21 | 2015-03-18 | 三星钻石工业股份有限公司 | Disjunction method of wafer laminated body for image detectors |
| CN104658976A (en) * | 2013-11-15 | 2015-05-27 | 三星钻石工业股份有限公司 | Dividing method and dividing apparatus for wafer laminated body |
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2015
- 2015-01-08 CN CN201510009652.6A patent/CN105826180A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1646282A (en) * | 2002-04-01 | 2005-07-27 | 三星钻石工业股份有限公司 | Parting method for fragile material substrate and parting device using the method |
| US20130149802A1 (en) * | 2011-12-12 | 2013-06-13 | Canon Kabushiki Kaisha | Method of manufacturing semiconductor element |
| CN104425527A (en) * | 2013-08-21 | 2015-03-18 | 三星钻石工业股份有限公司 | Disjunction method of wafer laminated body for image detectors |
| CN104658976A (en) * | 2013-11-15 | 2015-05-27 | 三星钻石工业股份有限公司 | Dividing method and dividing apparatus for wafer laminated body |
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Application publication date: 20160803 |