CN104285254B - 包含可缩放驱动器的设备及方法 - Google Patents

包含可缩放驱动器的设备及方法 Download PDF

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Publication number
CN104285254B
CN104285254B CN201380018180.XA CN201380018180A CN104285254B CN 104285254 B CN104285254 B CN 104285254B CN 201380018180 A CN201380018180 A CN 201380018180A CN 104285254 B CN104285254 B CN 104285254B
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drivers
die
driver
additional
semiconductor die
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Chinese (zh)
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CN104285254A (zh
Inventor
林峰
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Micron Technology Inc
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Micron Technology Inc
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    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/01—Details
    • H03K3/012—Modifications of generator to improve response time or to decrease power consumption
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/5226—Via connections in a multilevel interconnection structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of semiconductor or other solid state devices
    • H01L25/03—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/065—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H10D89/00
    • H01L25/0657—Stacked arrangements of devices
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/0175—Coupling arrangements; Interface arrangements
    • H03K19/0185—Coupling arrangements; Interface arrangements using field effect transistors only
    • H03K19/018507—Interface arrangements
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/0175—Coupling arrangements; Interface arrangements
    • H03K19/0185—Coupling arrangements; Interface arrangements using field effect transistors only
    • H03K19/018585—Coupling arrangements; Interface arrangements using field effect transistors only programmable
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2225/00—Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
    • H01L2225/03—All the devices being of a type provided for in the same main group of the same subclass of class H10, e.g. assemblies of rectifier diodes
    • H01L2225/04—All the devices being of a type provided for in the same main group of the same subclass of class H10, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L2225/065—All the devices being of a type provided for in the same main group of the same subclass of class H10
    • H01L2225/06503—Stacked arrangements of devices
    • H01L2225/06513—Bump or bump-like direct electrical connections between devices, e.g. flip-chip connection, solder bumps
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2225/00—Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
    • H01L2225/03—All the devices being of a type provided for in the same main group of the same subclass of class H10, e.g. assemblies of rectifier diodes
    • H01L2225/04—All the devices being of a type provided for in the same main group of the same subclass of class H10, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L2225/065—All the devices being of a type provided for in the same main group of the same subclass of class H10
    • H01L2225/06503—Stacked arrangements of devices
    • H01L2225/06541—Conductive via connections through the device, e.g. vertical interconnects, through silicon via [TSV]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2225/00—Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
    • H01L2225/03—All the devices being of a type provided for in the same main group of the same subclass of class H10, e.g. assemblies of rectifier diodes
    • H01L2225/04—All the devices being of a type provided for in the same main group of the same subclass of class H10, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L2225/065—All the devices being of a type provided for in the same main group of the same subclass of class H10
    • H01L2225/06503—Stacked arrangements of devices
    • H01L2225/06555—Geometry of the stack, e.g. form of the devices, geometry to facilitate stacking
    • H01L2225/06565—Geometry of the stack, e.g. form of the devices, geometry to facilitate stacking the devices having the same size and there being no auxiliary carrier between the devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/481—Internal lead connections, e.g. via connections, feedthrough structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computing Systems (AREA)
  • Mathematical Physics (AREA)
  • General Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Semiconductor Memories (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Logic Circuits (AREA)
CN201380018180.XA 2012-03-27 2013-03-13 包含可缩放驱动器的设备及方法 Active CN104285254B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US13/431,674 2012-03-27
US13/431,674 US8587340B2 (en) 2012-03-27 2012-03-27 Apparatuses including scalable drivers and methods
PCT/US2013/030900 WO2013148199A1 (en) 2012-03-27 2013-03-13 Apparatuses including scalable drivers and methods

Publications (2)

Publication Number Publication Date
CN104285254A CN104285254A (zh) 2015-01-14
CN104285254B true CN104285254B (zh) 2016-07-20

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Application Number Title Priority Date Filing Date
CN201380018180.XA Active CN104285254B (zh) 2012-03-27 2013-03-13 包含可缩放驱动器的设备及方法

Country Status (7)

Country Link
US (3) US8587340B2 (enExample)
EP (1) EP2831876B1 (enExample)
JP (1) JP6082803B2 (enExample)
KR (1) KR101936980B1 (enExample)
CN (1) CN104285254B (enExample)
TW (1) TWI570739B (enExample)
WO (1) WO2013148199A1 (enExample)

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US9153312B2 (en) 2013-08-23 2015-10-06 Micron Technology, Inc. Methods and apparatuses including transmitter circuits
US9397566B2 (en) * 2014-03-20 2016-07-19 Intel Corporation Master-slave digital voltage regulators
US9042160B1 (en) * 2014-07-03 2015-05-26 Sandisk Technologies Inc. Memory device with resistive random access memory (ReRAM)
KR20160043714A (ko) * 2014-10-14 2016-04-22 에스케이하이닉스 주식회사 관통 비아를 갖는 반도체 메모리 장치
US9455189B1 (en) 2015-06-14 2016-09-27 Darryl G. Walker Package including a plurality of stacked semiconductor devices including a capacitance enhanced through via and method of manufacture
US20210125040A1 (en) * 2019-10-24 2021-04-29 International Business Machines Corporation 3d neural inference processing unit architectures

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CN101060010A (zh) * 2006-04-21 2007-10-24 松下电器产业株式会社 半导体存储装置
US20110161748A1 (en) * 2009-12-31 2011-06-30 Bryan Casper Systems, methods, and apparatuses for hybrid memory
CN102376356A (zh) * 2010-08-12 2012-03-14 台湾积体电路制造股份有限公司 带有减小的栅极电阻的字线驱动器器件及其制造方法
CN102386172A (zh) * 2010-08-27 2012-03-21 海力士半导体有限公司 半导体集成电路

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Also Published As

Publication number Publication date
EP2831876B1 (en) 2019-08-28
KR20140140076A (ko) 2014-12-08
US8836395B2 (en) 2014-09-16
US8587340B2 (en) 2013-11-19
TW201403616A (zh) 2014-01-16
TWI570739B (zh) 2017-02-11
US20130257489A1 (en) 2013-10-03
EP2831876A1 (en) 2015-02-04
US20140070860A1 (en) 2014-03-13
EP2831876A4 (en) 2015-11-11
JP6082803B2 (ja) 2017-02-15
US9564878B2 (en) 2017-02-07
JP2015520432A (ja) 2015-07-16
CN104285254A (zh) 2015-01-14
WO2013148199A1 (en) 2013-10-03
US20150137866A1 (en) 2015-05-21
KR101936980B1 (ko) 2019-01-09

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