TWI570739B - 包括可縮放驅動器之裝置及方法 - Google Patents

包括可縮放驅動器之裝置及方法 Download PDF

Info

Publication number
TWI570739B
TWI570739B TW102110367A TW102110367A TWI570739B TW I570739 B TWI570739 B TW I570739B TW 102110367 A TW102110367 A TW 102110367A TW 102110367 A TW102110367 A TW 102110367A TW I570739 B TWI570739 B TW I570739B
Authority
TW
Taiwan
Prior art keywords
drivers
die
driver
drive
semiconductor die
Prior art date
Application number
TW102110367A
Other languages
English (en)
Chinese (zh)
Other versions
TW201403616A (zh
Inventor
林芬
Original Assignee
美光科技公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 美光科技公司 filed Critical 美光科技公司
Publication of TW201403616A publication Critical patent/TW201403616A/zh
Application granted granted Critical
Publication of TWI570739B publication Critical patent/TWI570739B/zh

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/01—Details
    • H03K3/012—Modifications of generator to improve response time or to decrease power consumption
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/5226—Via connections in a multilevel interconnection structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of semiconductor or other solid state devices
    • H01L25/03—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/065—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H10D89/00
    • H01L25/0657—Stacked arrangements of devices
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/0175—Coupling arrangements; Interface arrangements
    • H03K19/0185—Coupling arrangements; Interface arrangements using field effect transistors only
    • H03K19/018507—Interface arrangements
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/0175—Coupling arrangements; Interface arrangements
    • H03K19/0185—Coupling arrangements; Interface arrangements using field effect transistors only
    • H03K19/018585—Coupling arrangements; Interface arrangements using field effect transistors only programmable
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2225/00—Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
    • H01L2225/03—All the devices being of a type provided for in the same main group of the same subclass of class H10, e.g. assemblies of rectifier diodes
    • H01L2225/04—All the devices being of a type provided for in the same main group of the same subclass of class H10, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L2225/065—All the devices being of a type provided for in the same main group of the same subclass of class H10
    • H01L2225/06503—Stacked arrangements of devices
    • H01L2225/06513—Bump or bump-like direct electrical connections between devices, e.g. flip-chip connection, solder bumps
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2225/00—Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
    • H01L2225/03—All the devices being of a type provided for in the same main group of the same subclass of class H10, e.g. assemblies of rectifier diodes
    • H01L2225/04—All the devices being of a type provided for in the same main group of the same subclass of class H10, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L2225/065—All the devices being of a type provided for in the same main group of the same subclass of class H10
    • H01L2225/06503—Stacked arrangements of devices
    • H01L2225/06541—Conductive via connections through the device, e.g. vertical interconnects, through silicon via [TSV]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2225/00—Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
    • H01L2225/03—All the devices being of a type provided for in the same main group of the same subclass of class H10, e.g. assemblies of rectifier diodes
    • H01L2225/04—All the devices being of a type provided for in the same main group of the same subclass of class H10, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L2225/065—All the devices being of a type provided for in the same main group of the same subclass of class H10
    • H01L2225/06503—Stacked arrangements of devices
    • H01L2225/06555—Geometry of the stack, e.g. form of the devices, geometry to facilitate stacking
    • H01L2225/06565—Geometry of the stack, e.g. form of the devices, geometry to facilitate stacking the devices having the same size and there being no auxiliary carrier between the devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/481—Internal lead connections, e.g. via connections, feedthrough structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computing Systems (AREA)
  • Mathematical Physics (AREA)
  • General Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Semiconductor Memories (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Logic Circuits (AREA)
TW102110367A 2012-03-27 2013-03-22 包括可縮放驅動器之裝置及方法 TWI570739B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US13/431,674 US8587340B2 (en) 2012-03-27 2012-03-27 Apparatuses including scalable drivers and methods

Publications (2)

Publication Number Publication Date
TW201403616A TW201403616A (zh) 2014-01-16
TWI570739B true TWI570739B (zh) 2017-02-11

Family

ID=49234090

Family Applications (1)

Application Number Title Priority Date Filing Date
TW102110367A TWI570739B (zh) 2012-03-27 2013-03-22 包括可縮放驅動器之裝置及方法

Country Status (7)

Country Link
US (3) US8587340B2 (enExample)
EP (1) EP2831876B1 (enExample)
JP (1) JP6082803B2 (enExample)
KR (1) KR101936980B1 (enExample)
CN (1) CN104285254B (enExample)
TW (1) TWI570739B (enExample)
WO (1) WO2013148199A1 (enExample)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8587340B2 (en) * 2012-03-27 2013-11-19 Micron Technology, Inc. Apparatuses including scalable drivers and methods
US9153312B2 (en) 2013-08-23 2015-10-06 Micron Technology, Inc. Methods and apparatuses including transmitter circuits
US9397566B2 (en) * 2014-03-20 2016-07-19 Intel Corporation Master-slave digital voltage regulators
US9042160B1 (en) * 2014-07-03 2015-05-26 Sandisk Technologies Inc. Memory device with resistive random access memory (ReRAM)
KR20160043714A (ko) * 2014-10-14 2016-04-22 에스케이하이닉스 주식회사 관통 비아를 갖는 반도체 메모리 장치
US9455189B1 (en) 2015-06-14 2016-09-27 Darryl G. Walker Package including a plurality of stacked semiconductor devices including a capacitance enhanced through via and method of manufacture
US20210125040A1 (en) * 2019-10-24 2021-04-29 International Business Machines Corporation 3d neural inference processing unit architectures

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6704818B1 (en) * 2000-12-29 2004-03-09 Intel Corporation Voltage-mode driver with pre-emphasis, slew-rate control and source termination
TW200733127A (en) * 2006-02-22 2007-09-01 Hynix Semiconductor Inc Data output driving circuit of semiconductor memory apparatus
US7277382B1 (en) * 2001-01-09 2007-10-02 Urbain A. von der Embse Hybrid walsh encoder and decoder for CDMA
US7545164B2 (en) * 2005-09-30 2009-06-09 Samsung Electronics Co., Ltd. Output driver for controlling impedance and intensity of pre-emphasis driver using mode register set
US7671630B2 (en) * 2005-07-29 2010-03-02 Synopsys, Inc. USB 2.0 HS voltage-mode transmitter with tuned termination resistance
US20100177830A1 (en) * 2009-01-15 2010-07-15 International Business Machines Corporation Configurable pre-emphasis driver with selective constant and adjustable output impedance modes

Family Cites Families (30)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0679330B2 (ja) 1987-11-11 1994-10-05 富士通株式会社 イメージセンサの画素分解能検査方法
JPH07170171A (ja) * 1993-12-14 1995-07-04 Matsushita Electric Ind Co Ltd 半導体集積回路装置
JPH10312230A (ja) * 1997-05-14 1998-11-24 Oki Data:Kk 駆動能力切換機能付出力バッファ装置
JPH1125678A (ja) * 1997-06-27 1999-01-29 Samsung Electron Co Ltd 出力ドライバ及び半導体メモリ装置
US6051995A (en) 1998-09-11 2000-04-18 Sharp Electronics Corporation Constant impedance, low noise CMOS buffer
US6255899B1 (en) * 1999-09-01 2001-07-03 International Business Machines Corporation Method and apparatus for increasing interchip communications rates
US6908784B1 (en) * 2002-03-06 2005-06-21 Micron Technology, Inc. Method for fabricating encapsulated semiconductor components
US7291878B2 (en) * 2003-06-03 2007-11-06 Hitachi Global Storage Technologies Netherlands B.V. Ultra low-cost solid-state memory
US20040263203A1 (en) * 2003-06-27 2004-12-30 Intel Corporation Signal compensation
US7158423B2 (en) * 2004-06-22 2007-01-02 Samsung ′Electronics Co., Ltd. Semiconductor memory device and array internal power voltage generating method thereof
US7129567B2 (en) * 2004-08-31 2006-10-31 Micron Technology, Inc. Substrate, semiconductor die, multichip module, and system including a via structure comprising a plurality of conductive elements
KR100668515B1 (ko) 2005-09-28 2007-01-12 주식회사 하이닉스반도체 슬루-레이트가 제어된 오픈-루프 출력 드라이버
US7737003B2 (en) * 2005-10-11 2010-06-15 International Business Machines Corporation Method and structure for optimizing yield of 3-D chip manufacture
JP2007293933A (ja) * 2006-04-21 2007-11-08 Matsushita Electric Ind Co Ltd 半導体記憶装置
JP4901286B2 (ja) * 2006-04-24 2012-03-21 株式会社東芝 半導体装置及びメモリ回路システム
US8384417B2 (en) * 2008-09-10 2013-02-26 Qualcomm Incorporated Systems and methods utilizing redundancy in semiconductor chip interconnects
US7796446B2 (en) * 2008-09-19 2010-09-14 Qimonda Ag Memory dies for flexible use and method for configuring memory dies
US20100121994A1 (en) 2008-11-10 2010-05-13 International Business Machines Corporation Stacked memory array
US8259461B2 (en) * 2008-11-25 2012-09-04 Micron Technology, Inc. Apparatus for bypassing faulty connections
KR20100105040A (ko) * 2009-03-20 2010-09-29 주식회사 하이닉스반도체 반도체 메모리 장치
KR101048795B1 (ko) 2009-07-10 2011-07-15 주식회사 하이닉스반도체 반도체 장치
US9160349B2 (en) 2009-08-27 2015-10-13 Micron Technology, Inc. Die location compensation
US8315068B2 (en) * 2009-11-12 2012-11-20 International Business Machines Corporation Integrated circuit die stacks having initially identical dies personalized with fuses and methods of manufacturing the same
US8612809B2 (en) * 2009-12-31 2013-12-17 Intel Corporation Systems, methods, and apparatuses for stacked memory
WO2011115648A1 (en) 2010-03-15 2011-09-22 Rambus Inc. Chip selection in a symmetric interconnection topology
KR20110119087A (ko) 2010-04-26 2011-11-02 삼성전자주식회사 스택형 반도체 장치
US8692333B2 (en) * 2010-08-12 2014-04-08 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device for word line driver with efficient routing of conductor for decreased gate resistance
KR20120019882A (ko) * 2010-08-27 2012-03-07 주식회사 하이닉스반도체 반도체 집적회로
CN102709272B (zh) * 2011-03-28 2015-01-21 财团法人工业技术研究院 硅通孔的容错单元与方法
US8587340B2 (en) * 2012-03-27 2013-11-19 Micron Technology, Inc. Apparatuses including scalable drivers and methods

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6704818B1 (en) * 2000-12-29 2004-03-09 Intel Corporation Voltage-mode driver with pre-emphasis, slew-rate control and source termination
US7277382B1 (en) * 2001-01-09 2007-10-02 Urbain A. von der Embse Hybrid walsh encoder and decoder for CDMA
US7671630B2 (en) * 2005-07-29 2010-03-02 Synopsys, Inc. USB 2.0 HS voltage-mode transmitter with tuned termination resistance
US7545164B2 (en) * 2005-09-30 2009-06-09 Samsung Electronics Co., Ltd. Output driver for controlling impedance and intensity of pre-emphasis driver using mode register set
TW200733127A (en) * 2006-02-22 2007-09-01 Hynix Semiconductor Inc Data output driving circuit of semiconductor memory apparatus
US20100177830A1 (en) * 2009-01-15 2010-07-15 International Business Machines Corporation Configurable pre-emphasis driver with selective constant and adjustable output impedance modes

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
Jhih-Wei You, et al, 「Performance Characterization of TSV in 3D IC via Sensitivity Analysis」,Test Symposium (ATS), 2010 19th IEEE Asian, 1 Dec. 2010 *

Also Published As

Publication number Publication date
EP2831876B1 (en) 2019-08-28
KR20140140076A (ko) 2014-12-08
US8836395B2 (en) 2014-09-16
US8587340B2 (en) 2013-11-19
TW201403616A (zh) 2014-01-16
CN104285254B (zh) 2016-07-20
US20130257489A1 (en) 2013-10-03
EP2831876A1 (en) 2015-02-04
US20140070860A1 (en) 2014-03-13
EP2831876A4 (en) 2015-11-11
JP6082803B2 (ja) 2017-02-15
US9564878B2 (en) 2017-02-07
JP2015520432A (ja) 2015-07-16
CN104285254A (zh) 2015-01-14
WO2013148199A1 (en) 2013-10-03
US20150137866A1 (en) 2015-05-21
KR101936980B1 (ko) 2019-01-09

Similar Documents

Publication Publication Date Title
TWI570739B (zh) 包括可縮放驅動器之裝置及方法
US12222880B2 (en) Stacked semiconductor device assembly in computer system
TWI641109B (zh) Memory device
US8659136B2 (en) Semiconductor memory device, semiconductor package and system having stack-structured semiconductor chips
CN102822966B (zh) 半导体通信设备及方法
CN111244052B (zh) 堆叠元件、记忆体晶粒、记忆体元件及定址方法
CN107039056A (zh) 层叠存储装置以及具有该层叠存储装置的存储器封装
CN105431939A (zh) 堆栈存储器
CN106205670B (zh) 包括再分布层的半导体器件
JP6207228B2 (ja) 集積回路装置およびその構成方法
KR101936355B1 (ko) 멀티-칩 시스템 및 반도체 패키지
CN104751882B (zh) 用于初始化通道的3d半导体装置
US9369129B2 (en) Semiconductor device including an arbiter cell