CN104183656A - 太阳能电池及其制造方法 - Google Patents
太阳能电池及其制造方法 Download PDFInfo
- Publication number
- CN104183656A CN104183656A CN201410214046.3A CN201410214046A CN104183656A CN 104183656 A CN104183656 A CN 104183656A CN 201410214046 A CN201410214046 A CN 201410214046A CN 104183656 A CN104183656 A CN 104183656A
- Authority
- CN
- China
- Prior art keywords
- doped region
- conducting particles
- solar cell
- electrode part
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000034 method Methods 0.000 title claims abstract description 24
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 10
- 239000002245 particle Substances 0.000 claims abstract description 126
- 239000000758 substrate Substances 0.000 claims abstract description 81
- 229920005989 resin Polymers 0.000 claims abstract description 33
- 239000011347 resin Substances 0.000 claims abstract description 33
- 239000012535 impurity Substances 0.000 claims abstract description 25
- 229920001187 thermosetting polymer Polymers 0.000 claims abstract description 23
- 229910021332 silicide Inorganic materials 0.000 claims abstract description 15
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims abstract description 15
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 102
- 229910052759 nickel Inorganic materials 0.000 claims description 44
- 239000002003 electrode paste Substances 0.000 claims description 30
- 229910052709 silver Inorganic materials 0.000 claims description 23
- 239000004332 silver Substances 0.000 claims description 23
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 22
- 238000010438 heat treatment Methods 0.000 claims description 7
- RUFLMLWJRZAWLJ-UHFFFAOYSA-N nickel silicide Chemical compound [Ni]=[Si]=[Ni] RUFLMLWJRZAWLJ-UHFFFAOYSA-N 0.000 claims description 5
- 229910021334 nickel silicide Inorganic materials 0.000 claims description 5
- 239000004925 Acrylic resin Substances 0.000 claims description 4
- 229920000178 Acrylic resin Polymers 0.000 claims description 4
- 239000003822 epoxy resin Substances 0.000 claims description 4
- 239000000178 monomer Substances 0.000 claims description 4
- 229920000647 polyepoxide Polymers 0.000 claims description 4
- 239000010410 layer Substances 0.000 description 45
- 238000007639 printing Methods 0.000 description 16
- 230000004888 barrier function Effects 0.000 description 13
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 12
- PEUPIGGLJVUNEU-UHFFFAOYSA-N nickel silicon Chemical compound [Si].[Ni] PEUPIGGLJVUNEU-UHFFFAOYSA-N 0.000 description 9
- 230000015572 biosynthetic process Effects 0.000 description 8
- 239000011241 protective layer Substances 0.000 description 8
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 6
- 239000002800 charge carrier Substances 0.000 description 6
- 239000005341 toughened glass Substances 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 4
- 238000005229 chemical vapour deposition Methods 0.000 description 4
- 238000005530 etching Methods 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 239000004484 Briquette Substances 0.000 description 3
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 3
- 239000000654 additive Substances 0.000 description 3
- 230000000996 additive effect Effects 0.000 description 3
- 239000000428 dust Substances 0.000 description 3
- 239000005038 ethylene vinyl acetate Substances 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 229910052742 iron Inorganic materials 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 229920001200 poly(ethylene-vinyl acetate) Polymers 0.000 description 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 229910004205 SiNX Inorganic materials 0.000 description 2
- 239000004411 aluminium Substances 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 230000000712 assembly Effects 0.000 description 2
- 238000000429 assembly Methods 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- DQXBYHZEEUGOBF-UHFFFAOYSA-N but-3-enoic acid;ethene Chemical compound C=C.OC(=O)CC=C DQXBYHZEEUGOBF-UHFFFAOYSA-N 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 229910052733 gallium Inorganic materials 0.000 description 2
- 229910052738 indium Inorganic materials 0.000 description 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 239000002952 polymeric resin Substances 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 229920003002 synthetic resin Polymers 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 239000012298 atmosphere Substances 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 230000001795 light effect Effects 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 229920000139 polyethylene terephthalate Polymers 0.000 description 1
- 239000005020 polyethylene terephthalate Substances 0.000 description 1
- 229920005644 polyethylene terephthalate glycol copolymer Polymers 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 238000005036 potential barrier Methods 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
- 150000003378 silver Chemical class 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 230000003685 thermal hair damage Effects 0.000 description 1
- 239000004408 titanium dioxide Substances 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
- H01L31/0684—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells double emitter cells, e.g. bifacial solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
Abstract
Description
Claims (19)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020130056314A KR101614186B1 (ko) | 2013-05-20 | 2013-05-20 | 태양전지 및 이의 제조 방법 |
KR10-2013-0056314 | 2013-05-20 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN104183656A true CN104183656A (zh) | 2014-12-03 |
CN104183656B CN104183656B (zh) | 2017-01-18 |
Family
ID=50390981
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201410214046.3A Active CN104183656B (zh) | 2013-05-20 | 2014-05-20 | 太阳能电池及其制造方法 |
Country Status (5)
Country | Link |
---|---|
US (1) | US11004988B2 (zh) |
EP (1) | EP2806465B1 (zh) |
JP (1) | JP5952336B2 (zh) |
KR (1) | KR101614186B1 (zh) |
CN (1) | CN104183656B (zh) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE202015102238U1 (de) * | 2015-05-04 | 2015-06-01 | Solarworld Innovations Gmbh | Photovoltaik-Zelle und Photovoltaik-Modul |
US10911756B2 (en) | 2016-10-28 | 2021-02-02 | Electronics And Telecommunications Research Institute | Video encoding/decoding method and apparatus, and recording medium in which bit stream is stored |
KR101980946B1 (ko) * | 2016-11-11 | 2019-05-21 | 삼성에스디아이 주식회사 | 태양전지용 전면 전극 및 이를 포함하는 태양전지 |
KR20210103850A (ko) * | 2020-02-14 | 2021-08-24 | 엘지전자 주식회사 | 태양 전지, 그리고 태양 전지 패널 및 이의 제조 방법 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20080169757A1 (en) * | 2007-01-16 | 2008-07-17 | Tpo Displays Corp. | Top-emitting organic electroluminescent display |
CN101752452A (zh) * | 2008-12-01 | 2010-06-23 | 台湾茂矽电子股份有限公司 | 双面太阳能电池的制造方法 |
CN102301485A (zh) * | 2008-12-22 | 2011-12-28 | E.I.内穆尔杜邦公司 | 用于形成光伏器件的组合物和方法 |
CN102637750A (zh) * | 2011-02-09 | 2012-08-15 | Lg电子株式会社 | 太阳能电池 |
CN103098227A (zh) * | 2010-07-09 | 2013-05-08 | 鹰羽产业株式会社 | 面板、面板的制造方法、太阳电池模块、印刷装置以及印刷方法 |
Family Cites Families (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5896777A (ja) | 1981-12-03 | 1983-06-08 | Mitsubishi Electric Corp | 太陽電池 |
JP3254044B2 (ja) | 1993-06-16 | 2002-02-04 | ナミックス株式会社 | 太陽電池用電極 |
JP3557148B2 (ja) | 2000-02-21 | 2004-08-25 | 三洋電機株式会社 | 太陽電池モジュール |
US8575474B2 (en) | 2006-03-20 | 2013-11-05 | Heracus Precious Metals North America Conshohocken LLC | Solar cell contacts containing aluminum and at least one of boron, titanium, nickel, tin, silver, gallium, zinc, indium and copper |
JP2008135654A (ja) | 2006-11-29 | 2008-06-12 | Sanyo Electric Co Ltd | 太陽電池モジュール |
JP4992449B2 (ja) * | 2007-02-06 | 2012-08-08 | 株式会社村田製作所 | 厚膜導体組成物および太陽電池セルの裏面Ag電極 |
US20100037941A1 (en) | 2008-08-13 | 2010-02-18 | E. I. Du Pont De Nemours And Company | Compositions and processes for forming photovoltaic devices |
JP2010182935A (ja) * | 2009-02-06 | 2010-08-19 | Sharp Corp | 薄膜太陽電池の製造方法 |
JP5144857B2 (ja) | 2010-03-01 | 2013-02-13 | 株式会社ノリタケカンパニーリミテド | 太陽電池用導電性ペースト組成物 |
US20120037216A1 (en) | 2010-08-13 | 2012-02-16 | Samsung Electronics Co., Ltd. | Conductive paste and electronic device and solar cell including an electrode formed using the conductive paste |
KR101665722B1 (ko) | 2010-09-27 | 2016-10-24 | 엘지전자 주식회사 | 태양 전지 및 이의 제조 방법 |
TW201251084A (en) * | 2010-12-02 | 2012-12-16 | Applied Nanotech Holdings Inc | Nanoparticle inks for solar cells |
KR20120079591A (ko) | 2011-01-05 | 2012-07-13 | 엘지전자 주식회사 | 태양전지 및 그 제조 방법 |
DE102011016335B4 (de) | 2011-04-07 | 2013-10-02 | Universität Konstanz | Nickelhaltige und ätzende druckbare Paste sowie Verfahren zur Bildung von elektrischen Kontakten beim Herstellen einer Solarzelle |
US8901414B2 (en) * | 2011-09-14 | 2014-12-02 | International Business Machines Corporation | Photovoltaic cells with copper grid |
CN104011882A (zh) * | 2012-01-12 | 2014-08-27 | 应用材料公司 | 制造太阳能电池装置的方法 |
-
2013
- 2013-05-20 KR KR1020130056314A patent/KR101614186B1/ko active IP Right Grant
-
2014
- 2014-03-20 US US14/221,111 patent/US11004988B2/en active Active
- 2014-03-28 EP EP14001166.9A patent/EP2806465B1/en active Active
- 2014-05-19 JP JP2014103448A patent/JP5952336B2/ja active Active
- 2014-05-20 CN CN201410214046.3A patent/CN104183656B/zh active Active
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20080169757A1 (en) * | 2007-01-16 | 2008-07-17 | Tpo Displays Corp. | Top-emitting organic electroluminescent display |
CN101752452A (zh) * | 2008-12-01 | 2010-06-23 | 台湾茂矽电子股份有限公司 | 双面太阳能电池的制造方法 |
CN102301485A (zh) * | 2008-12-22 | 2011-12-28 | E.I.内穆尔杜邦公司 | 用于形成光伏器件的组合物和方法 |
CN103098227A (zh) * | 2010-07-09 | 2013-05-08 | 鹰羽产业株式会社 | 面板、面板的制造方法、太阳电池模块、印刷装置以及印刷方法 |
CN102637750A (zh) * | 2011-02-09 | 2012-08-15 | Lg电子株式会社 | 太阳能电池 |
Also Published As
Publication number | Publication date |
---|---|
JP5952336B2 (ja) | 2016-07-13 |
US11004988B2 (en) | 2021-05-11 |
EP2806465B1 (en) | 2017-01-04 |
EP2806465A2 (en) | 2014-11-26 |
KR20140136562A (ko) | 2014-12-01 |
EP2806465A3 (en) | 2015-04-01 |
CN104183656B (zh) | 2017-01-18 |
US20140338738A1 (en) | 2014-11-20 |
KR101614186B1 (ko) | 2016-04-20 |
JP2014229904A (ja) | 2014-12-08 |
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Application publication date: 20141203 Assignee: Hanhua thinksin Co.,Ltd. Assignor: LG ELECTRONICS Inc. Contract record no.: X2022990000645 Denomination of invention: Solar cell and method of making the same Granted publication date: 20170118 License type: Common License Record date: 20220914 |
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Effective date of registration: 20221025 Address after: No. 3, Yingbin Avenue, Shangrao Economic and Technological Development Zone, Jiangxi Province Patentee after: Shangrao Jingke Green Energy Technology Development Co.,Ltd. Address before: Seoul, South Kerean Patentee before: LG ELECTRONICS Inc. |
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Address after: No. 3, Yingbin Avenue, Shangrao Economic and Technological Development Zone, Jiangxi Province 334100 Patentee after: Shangrao Xinyuan Yuedong Technology Development Co.,Ltd. Address before: No. 3, Yingbin Avenue, Shangrao Economic and Technological Development Zone, Jiangxi Province 334100 Patentee before: Shangrao Jingke Green Energy Technology Development Co.,Ltd. |
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Effective date of registration: 20240305 Address after: 213031 Tianhe PV Industrial Park No. 2, Xinbei District, Changzhou, Jiangsu Patentee after: TRINA SOLAR Co.,Ltd. Country or region after: China Address before: No. 3, Yingbin Avenue, Shangrao Economic and Technological Development Zone, Jiangxi Province 334100 Patentee before: Shangrao Xinyuan Yuedong Technology Development Co.,Ltd. Country or region before: China |