JP5258325B2 - 太陽電池モジュール - Google Patents
太陽電池モジュール Download PDFInfo
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- JP5258325B2 JP5258325B2 JP2008045081A JP2008045081A JP5258325B2 JP 5258325 B2 JP5258325 B2 JP 5258325B2 JP 2008045081 A JP2008045081 A JP 2008045081A JP 2008045081 A JP2008045081 A JP 2008045081A JP 5258325 B2 JP5258325 B2 JP 5258325B2
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- electrode
- solar cell
- receiving surface
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- ILAHWRKJUDSMFH-UHFFFAOYSA-N boron tribromide Chemical compound BrB(Br)Br ILAHWRKJUDSMFH-UHFFFAOYSA-N 0.000 description 2
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Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/048—Encapsulation of modules
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/022441—Electrode arrangements specially adapted for back-contact solar cells
- H01L31/02245—Electrode arrangements specially adapted for back-contact solar cells for metallisation wrap-through [MWT] type solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/05—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells
- H01L31/0504—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module
- H01L31/0516—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module specially adapted for interconnection of back-contact solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
- H01L31/0682—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells back-junction, i.e. rearside emitter, solar cells, e.g. interdigitated base-emitter regions back-junction cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic System
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Description
極はBi 2 O 3 −SiO 2 −B 2 O 3 系ガラスフリットによって形成されたものである。ここで裏面開口部における「断面積が最小である」とは、貫通孔の厚み方向における他のいずれの部位における断面積よりも、裏面開口部の断面積が小さい(同一を含まない)ことを意味する。
[太陽電池素子]
図1は、本発明の実施の一形態である太陽電池モジュールを構成する太陽電池素子10の構成を示す断面図である。
最小になるように形成されることになる。
図3は、本発明の実施形態に係る太陽電池モジュール20の構成を示す図であり、図3(a)は断面図、図3(b)は、受光面側からみた平面図である。
[太陽電池素子の製造方法]
太陽電池素子10の製造方法について、図5の工程図を用いて説明する。
<半導体基板の準備工程>
まず、第1導電型を示す半導体基板1として、P型のシリコン基板を準備する(図5(a))。
toms/cm3程度の濃度でドープされたP型結晶シリコン基板を用いた場合について説明する。ここで、Gaを用いれば、基板中のO(酸素)とBとが関係して生じる光劣化現象を回避できるので高効率化に好適である。また、シリコン基板の厚みは、300μm以下にすることが好ましく、より好ましくは250μm以下、さらに好ましくは150μm以下にすればよい。また、P(リン)等をドープしたN型結晶シリコン基板を用いることもできる。
<貫通孔の形成工程>
次に、半導体基板1を厚み方向に貫通する貫通孔3を形成する(図5(b))。
<受光面のテクスチャ構造形成工程>
次に、半導体基板1の受光面側に、光反射率の低減を効果的に行うための微細な突起(凸部)をもつテクスチャ構造1aを形成する(図5(c))。
<逆導電型層の形成工程>
次に、受光面上に第1逆導電型層2aを形成し、貫通孔3の内壁に逆導電型を成す第2逆導電型層2bを形成し、裏面上に第3逆導電型層2cを形成する(図5(d))。
<反射防止膜の形成工程>
次に、第1逆導電型層2aの上に、反射防止膜7を形成する(図5(e))。
<裏面への高濃度ドープ層形成工程>
次に、半導体基板1の裏面には、第1導電型半導体の不純物が高濃度に拡散された高濃度ドープ層6を形成する(図5(f))。
<第1電極および第2電極の形成方法>
次に、半導体基板1に、受光面側電極4aと貫通孔内電極4bを形成する(図5(g))。
ペーストには、ガラスフリットとして、PbO−SiO2−B2O3系ガラスフリットを含有することが好ましい。また、耐湿性を重視した貫通孔内電極4bに用いられるペーストには、ガラスフリットとして、鉛レスのBi2O3−SiO2−B2O3系ガラスフリットを含有することが好ましい。
[太陽電池モジュールの製造方法]
次に、上述したような太陽電池素子10を用いた太陽電池モジュール20を形成する製造工程について説明する。
ニルアセテート共重合体(EVA)などからなる封止性樹脂14と、配線部材11によって隣接太陽電池素子の第1電極4と第2電極5とが交互に接続された複数の太陽電池素子10と、EVAなどからなる封止性樹脂15と、たとえばポリエチレンテレフタレート(PET)や金属箔をポリフッ化ビニル樹脂(PVF)で挟みこんだフィルム等の裏面側部材13とを順次積層して、ラミネータの中で脱気、加熱して押圧することによって一体化させる。
1a テクスチャ構造
2 逆導電型層(拡散層)
2a 第1逆導電型層
2b 第2逆導電型層
2c 第3逆導電型層
3 貫通孔
4 第1電極
4a 受光面側電極
4b 貫通孔内電極
4c 裏面側電極
5 第2電極
5a 出力取出電極
5b 集電電極
6 高濃度ドープ層
7 反射防止膜
8 絶縁材料層
10,11,12,13 太陽電池素子
20 太陽電池モジュール
Claims (4)
- 受光面と裏面とを含み、前記受光面と前記裏面との間を貫通する貫通孔を有する半導体基板と、前記受光面上に形成された受光面電極と、前記半導体基板の前記貫通孔内に設けられた貫通電極を有し、前記貫通孔の断面積が前記半導体基板の前記裏面側の開口において最小である太陽電池素子と、前記太陽電池素子の受光面を封止する第1の樹脂と、前記太陽電池素子の裏面を封止する第2の樹脂と、を有する太陽電池モジュールであって、
前記受光面電極はPbO−SiO 2 −B 2 O 3 系ガラスフリット、前記貫通孔電極はBi 2 O 3 −SiO 2 −B 2 O 3 系ガラスフリットによって形成された太陽電池モジュール。 - 前記貫通孔の受光面開口部における断面積S1に対する、裏面開口部における断面積S2の割合(S2/S1)は、0.5≦(S2/S1)≦0.9であることを特徴とする請求項1に記載の太陽電池モジュール。
- 前記太陽電池素子の前記裏面側に、前記貫通電極に電気的に接続され、前記太陽電池素子によって発生した電力を取り出す取り出し電極を有することを特徴とする請求項1または2に記載の太陽電池モジュール。
- 前記貫通電極と電気的に接続されており、前記太陽電池素子の前記裏面側に形成された裏面電極を有し、前記取り出し電極が、前記裏面電極と部分的に接続されていることを特徴とする請求項3に記載の太陽電池モジュール。
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KR100927725B1 (ko) * | 2008-01-25 | 2009-11-18 | 삼성에스디아이 주식회사 | 태양 전지 및 이의 제조 방법 |
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JP5261310B2 (ja) * | 2009-07-30 | 2013-08-14 | 京セラ株式会社 | 太陽電池素子の製造方法 |
JP5374788B2 (ja) * | 2009-08-31 | 2013-12-25 | シャープ株式会社 | 導電性ペースト、太陽電池セル用電極、太陽電池セルおよび太陽電池セルの製造方法 |
JP2011210802A (ja) | 2010-03-29 | 2011-10-20 | Napura:Kk | 太陽電池 |
CN102456767B (zh) * | 2010-10-20 | 2013-12-04 | 财团法人工业技术研究院 | 金属贯穿式太阳电池的制造方法 |
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