JP2014229904A - 太陽電池及びその製造方法 - Google Patents
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
- H01L31/0684—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells double emitter cells, e.g. bifacial solar cells
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
Abstract
【解決手段】本発明の太陽電池は、第1導電型の基板と、基板の第1面(first surface)に位置し、第1導電型とは異なる第2導電型の不純物を含有する第1ドーピング部と、第1ドーピング部と電気的に接続された第1電極部を含み、第1電極部は熱硬化性樹脂と、この樹脂内に分散された第1導電性粒子と、第2導電性粒子を含み、第2導電性粒子は、第1導電性粒子に比べて高い仕事関数を有し、第1ドーピング部と接触する界面にシリサイドを形成する。
【選択図】図2
Description
Claims (19)
- 第1導電型の基板と、
前記基板の第1面に位置し、第1導電型とは異なる第2導電型の不純物を含有する第1ドーピング部と、
前記第1ドーピング部と電気的に接続された第1電極部と
を含み、
前記第1電極部は、熱硬化性樹脂と、前記樹脂内に分散された第1導電性粒子と、第2導電性粒子とを含み、前記第2導電性粒子は、前記第1導電性粒子に比べて高い仕事関数を有し、前記第1ドーピング部と接触する界面にシリサイドを形成する太陽電池。 - 前記第1導電性粒子は、
銀(Ag)から構成され、前記第2導電性粒子は、ニッケル(Ni)から構成される、請求項1記載の太陽電池。 - 前記第1ドーピング部と接触する界面に形成されたシリサイドがニッケルシリサイドから構成される、請求項2記載の太陽電池。
- 前記ニッケルは、
銀とニッケルを合わせた全重量に対して15重量%〜25重量%の比率で含有される、請求項2記載の太陽電池。 - 前記ニッケルは、
2μm〜10μmの大きさを有する、請求項2記載の太陽電池。 - 前記熱硬化性樹脂は、
モノマー系のエポキシ樹脂またはアクリル樹脂を含む、請求項1記載の太陽電池。 - 前記第1ドーピング部は、
エミッタ部から形成される、請求項1記載の太陽電池。 - 前記エミッタ部には誘電層が形成される、請求項7記載の太陽電池。
- 前記第1電極部は、第1方向に延長された複数の第1フィンガー電極と、前記第1フィンガー電極と交差する第2方向に延長された複数の第2バスバー電極を含む、請求項8記載の太陽電池。
- 前記基板の第1面の反対側に位置する第2面に位置し、前記第1導電型の不純物を前記基板に比べて高濃度で含有する第2ドーピング部と、
前記第2ドーピング部と電気的に接続された第2電極部と
をさらに含み、
前記第2電極部は、前記第1導電性粒子、前記第2導電性粒子、前記シリサイド及び前記熱硬化性樹脂を含む、請求項1記載の太陽電池。 - 前記第2ドーピング部は後面電界部で形成される、請求項10記載の太陽電池。
- 前記後面電界部には、誘電層が形成される、請求項11記載の太陽電池。
- 前記第2電極部は、前記第1方向に延長された複数の第2フィンガー電極と前記第2フィンガー電極と交差する第2方向に延長された複数の第2バスバー電極を含む、請求項12記載の太陽電池。
- 第1導電型を有する基板の第1面に前記第1導電型とは異なる第2導電型の不純物を含有する第1ドーピング部を形成する段階と、
前記第1ドーピング部の一部を露出する開口部を備える誘電層を前記第1ドーピング部上に形成する段階と、
熱硬化性樹脂、前記樹脂内に分散された第1導電性粒子と、前記樹脂内に分散され、前記第1導電性粒子に比べて高い仕事関数を有する第2導電性粒子を含む電極ペーストを前記開口部を介して露出された前記第1ドーピング部に印刷する段階と、
前記電極ペーストを熱処理して硬化する段階と、
前記第2導電性粒子と、前記第1ドーピング部が接触する界面にシリサイドを形成する段階と
を含む太陽電池の製造方法。 - 前記第1導電性粒子として、銀(Ag)を使用し、前記第2導電性粒子としてニッケル(Ni)を使用する、請求項14記載の太陽電池の製造方法。
- 前記シリサイドを形成する段階は、前記ニッケルから構成された第2導電性粒子を利用して、前記第2導電性粒子が、前記第1ドーピング部と接触する界面にニッケルシリサイドを形成する段階を含む、請求項15記載の太陽電池の製造方法。
- 230℃〜260℃の温度で前記電極ペーストを熱処理して硬化する、請求項16記載の太陽電池の製造方法。
- 前記ニッケルシリサイドを形成する段階は、前記基板を350℃〜400℃の温度に加熱することを含む、請求項17記載の太陽電池の製造方法。
- 前記第1ドーピング部をエミッタ部で形成する、請求項14記載の太陽電池の製造方法。
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EP (1) | EP2806465B1 (ja) |
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DE202015102238U1 (de) * | 2015-05-04 | 2015-06-01 | Solarworld Innovations Gmbh | Photovoltaik-Zelle und Photovoltaik-Modul |
CN116647680A (zh) | 2016-10-28 | 2023-08-25 | 韩国电子通信研究院 | 视频编码/解码方法和设备以及存储比特流的记录介质 |
KR101980946B1 (ko) * | 2016-11-11 | 2019-05-21 | 삼성에스디아이 주식회사 | 태양전지용 전면 전극 및 이를 포함하는 태양전지 |
KR20210103850A (ko) * | 2020-02-14 | 2021-08-24 | 엘지전자 주식회사 | 태양 전지, 그리고 태양 전지 패널 및 이의 제조 방법 |
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- 2014-03-28 EP EP14001166.9A patent/EP2806465B1/en active Active
- 2014-05-19 JP JP2014103448A patent/JP5952336B2/ja active Active
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JPS5896777A (ja) * | 1981-12-03 | 1983-06-08 | Mitsubishi Electric Corp | 太陽電池 |
JPH0715022A (ja) * | 1993-06-16 | 1995-01-17 | Hokuriku Toryo Kk | 太陽電池用電極 |
JP2001237448A (ja) * | 2000-02-21 | 2001-08-31 | Sanyo Electric Co Ltd | 太陽電池モジュール |
JP2008135654A (ja) * | 2006-11-29 | 2008-06-12 | Sanyo Electric Co Ltd | 太陽電池モジュール |
JP2008192921A (ja) * | 2007-02-06 | 2008-08-21 | Murata Mfg Co Ltd | 厚膜導体組成物および太陽電池セルの裏面Ag電極 |
JP2011181680A (ja) * | 2010-03-01 | 2011-09-15 | Noritake Co Ltd | 太陽電池用導電性ペースト組成物 |
JP2013539230A (ja) * | 2010-09-27 | 2013-10-17 | エルジー エレクトロニクス インコーポレイティド | 半導体素子及びその製造方法 |
JP2014522545A (ja) * | 2011-04-07 | 2014-09-04 | ユニバシテート コンスタンツ | 印刷可能な媒体で金属粒子を含みかつエッチングをもたらし、より具体的には太陽電池の生産中にシリコンと接点を作り出す、印刷可能な媒体 |
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Publication number | Publication date |
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CN104183656A (zh) | 2014-12-03 |
US11004988B2 (en) | 2021-05-11 |
JP5952336B2 (ja) | 2016-07-13 |
KR20140136562A (ko) | 2014-12-01 |
US20140338738A1 (en) | 2014-11-20 |
KR101614186B1 (ko) | 2016-04-20 |
EP2806465A2 (en) | 2014-11-26 |
EP2806465B1 (en) | 2017-01-04 |
CN104183656B (zh) | 2017-01-18 |
EP2806465A3 (en) | 2015-04-01 |
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