CN104145330B - 用于临时接合超薄晶片的方法和装置 - Google Patents
用于临时接合超薄晶片的方法和装置 Download PDFInfo
- Publication number
- CN104145330B CN104145330B CN201380012296.2A CN201380012296A CN104145330B CN 104145330 B CN104145330 B CN 104145330B CN 201380012296 A CN201380012296 A CN 201380012296A CN 104145330 B CN104145330 B CN 104145330B
- Authority
- CN
- China
- Prior art keywords
- chip
- adhesive phase
- chuck component
- solidification
- lower chuck
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000000034 method Methods 0.000 title claims abstract description 63
- 235000012431 wafers Nutrition 0.000 title abstract 8
- 239000000853 adhesive Substances 0.000 claims description 160
- 230000001070 adhesive effect Effects 0.000 claims description 160
- 238000007711 solidification Methods 0.000 claims description 46
- 230000008023 solidification Effects 0.000 claims description 46
- 238000001723 curing Methods 0.000 claims description 30
- 238000000576 coating method Methods 0.000 claims description 28
- 239000011248 coating agent Substances 0.000 claims description 22
- 239000000203 mixture Substances 0.000 claims description 5
- 238000013007 heat curing Methods 0.000 claims description 4
- 229920002379 silicone rubber Polymers 0.000 claims description 4
- 238000003780 insertion Methods 0.000 claims description 2
- 230000037431 insertion Effects 0.000 claims description 2
- 230000003197 catalytic effect Effects 0.000 claims 2
- 230000006698 induction Effects 0.000 claims 2
- 230000002123 temporal effect Effects 0.000 claims 2
- 239000012790 adhesive layer Substances 0.000 abstract description 10
- 239000010410 layer Substances 0.000 description 40
- 239000007800 oxidant agent Substances 0.000 description 16
- 230000001590 oxidative effect Effects 0.000 description 16
- 239000002390 adhesive tape Substances 0.000 description 15
- 238000005516 engineering process Methods 0.000 description 13
- 238000004026 adhesive bonding Methods 0.000 description 10
- 229920001971 elastomer Polymers 0.000 description 7
- 239000000806 elastomer Substances 0.000 description 6
- 238000000227 grinding Methods 0.000 description 6
- 238000010586 diagram Methods 0.000 description 5
- 229910000679 solder Inorganic materials 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 4
- 238000005520 cutting process Methods 0.000 description 3
- 238000001125 extrusion Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 239000003292 glue Substances 0.000 description 2
- 238000005304 joining Methods 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 2
- 239000002243 precursor Substances 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000002002 slurry Substances 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 239000003082 abrasive agent Substances 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 235000011114 ammonium hydroxide Nutrition 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- 238000005253 cladding Methods 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000004615 ingredient Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 230000013011 mating Effects 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 229920006267 polyester film Polymers 0.000 description 1
- 238000011946 reduction process Methods 0.000 description 1
- 238000012552 review Methods 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000004575 stone Substances 0.000 description 1
- 238000009736 wetting Methods 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B37/00—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding
- B32B37/0046—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding characterised by constructional aspects of the apparatus
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B37/00—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding
- B32B37/12—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding characterised by using adhesives
- B32B37/1284—Application of adhesive
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B37/00—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding
- B32B37/14—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding characterised by the properties of the layers
- B32B37/16—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding characterised by the properties of the layers with all layers existing as coherent layers before laminating
- B32B37/18—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding characterised by the properties of the layers with all layers existing as coherent layers before laminating involving the assembly of discrete sheets or panels only
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02002—Preparing wafers
- H01L21/02005—Preparing bulk and homogeneous wafers
- H01L21/02008—Multistep processes
- H01L21/0201—Specific process step
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
- H01L21/2003—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy characterised by the substrate
- H01L21/2007—Bonding of semiconductor wafers to insulating substrates or to semiconducting substrates using an intermediate insulating layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67092—Apparatus for mechanical treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B2307/00—Properties of the layers or laminate
- B32B2307/20—Properties of the layers or laminate having particular electrical or magnetic properties, e.g. piezoelectric
- B32B2307/202—Conductive
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B2457/00—Electrical equipment
- B32B2457/14—Semiconductor wafers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68318—Auxiliary support including means facilitating the separation of a device or wafer from the auxiliary support
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/6834—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used to protect an active side of a device or wafer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68381—Details of chemical or physical process used for separating the auxiliary support from a device or wafer
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T156/00—Adhesive bonding and miscellaneous chemical manufacture
- Y10T156/17—Surface bonding means and/or assemblymeans with work feeding or handling means
Applications Claiming Priority (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201261611627P | 2012-03-16 | 2012-03-16 | |
| US61/611,627 | 2012-03-16 | ||
| US13/790,684 | 2013-03-08 | ||
| US13/790,684 US9064686B2 (en) | 2010-04-15 | 2013-03-08 | Method and apparatus for temporary bonding of ultra thin wafers |
| PCT/IB2013/000907 WO2013136188A1 (en) | 2012-03-16 | 2013-03-09 | Method and apparatus for temporary bonding of ultra thin wafers |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN104145330A CN104145330A (zh) | 2014-11-12 |
| CN104145330B true CN104145330B (zh) | 2017-05-17 |
Family
ID=49158014
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201380012296.2A Expired - Fee Related CN104145330B (zh) | 2012-03-16 | 2013-03-09 | 用于临时接合超薄晶片的方法和装置 |
Country Status (6)
| Country | Link |
|---|---|
| US (2) | US9064686B2 (ja) |
| EP (1) | EP2826065A1 (ja) |
| JP (1) | JP6174059B2 (ja) |
| KR (1) | KR102050541B1 (ja) |
| CN (1) | CN104145330B (ja) |
| WO (1) | WO2013136188A1 (ja) |
Families Citing this family (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5591859B2 (ja) * | 2012-03-23 | 2014-09-17 | 株式会社東芝 | 基板の分離方法及び分離装置 |
| JP6088835B2 (ja) * | 2012-09-28 | 2017-03-01 | 東京応化工業株式会社 | 貼合装置および貼り合わせ方法 |
| KR102075635B1 (ko) * | 2013-01-03 | 2020-03-02 | 삼성전자주식회사 | 웨이퍼 지지 구조물, 웨이퍼 지지 구조물을 포함하는 반도체 패키지의 중간 구조물, 및 중간 구조물을 이용한 반도체 패키지의 제조 방법 |
| TW201530610A (zh) * | 2014-01-27 | 2015-08-01 | Dow Corning | 暫時性接合晶圓系統及其製造方法 |
| JP6216727B2 (ja) * | 2014-05-08 | 2017-10-18 | 東京応化工業株式会社 | 支持体分離方法 |
| SG11201603148VA (en) * | 2014-12-18 | 2016-07-28 | Ev Group E Thallner Gmbh | Method for bonding substrates |
| JP2016119370A (ja) * | 2014-12-19 | 2016-06-30 | 株式会社ディスコ | ウエーハの加工方法 |
| JP6546783B2 (ja) * | 2015-05-21 | 2019-07-17 | 東京応化工業株式会社 | 積層体の製造方法及び支持体分離方法 |
| RU2612879C1 (ru) * | 2015-10-15 | 2017-03-13 | Акционерное общество "Концерн радиостроения "Вега" | Способ временного закрепления подложек на технологическом основании |
| CN106611756A (zh) * | 2015-10-26 | 2017-05-03 | 联华电子股份有限公司 | 晶片对晶片对接结构及其制作方法 |
| WO2019049588A1 (en) | 2017-09-07 | 2019-03-14 | Mapper Lithography Ip B.V. | METHODS AND SYSTEMS FOR COATING A SUBSTRATE |
| WO2019106846A1 (ja) * | 2017-12-01 | 2019-06-06 | 日立化成株式会社 | 半導体装置の製造方法、仮固定材用樹脂組成物、及び仮固定材用積層フィルム |
| WO2020056707A1 (en) * | 2018-09-21 | 2020-03-26 | Ningbo Semiconductor International Corporation (Shanghai Branch) | Image sensor module and method for forming the same |
| EP3633718A1 (en) | 2018-10-01 | 2020-04-08 | Infineon Technologies AG | Detection of adhesive residue on a wafer |
| US11127871B2 (en) | 2018-10-17 | 2021-09-21 | Sunpower Corporation | Structures and methods for forming electrodes of solar cells |
| KR102505723B1 (ko) | 2018-11-20 | 2023-03-03 | 주식회사 엘지에너지솔루션 | 이차 전지의 활성화 방법 |
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| CN1938845A (zh) * | 2004-03-26 | 2007-03-28 | 富士胶片株式会社 | 接合衬底的装置及方法 |
| US7232740B1 (en) * | 2005-05-16 | 2007-06-19 | The United States Of America As Represented By The National Security Agency | Method for bumping a thin wafer |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| JP3190159B2 (ja) * | 1993-03-10 | 2001-07-23 | 三菱マテリアルシリコン株式会社 | 半導体ウェーハの接着装置 |
| JP3742000B2 (ja) * | 2000-11-30 | 2006-02-01 | 富士通株式会社 | プレス装置 |
| AT502233B1 (de) | 2001-06-07 | 2007-04-15 | Thallner Erich | Vorrichtung zum lösen eines trägers von einer halbleiterscheibe |
| JP4330821B2 (ja) | 2001-07-04 | 2009-09-16 | 株式会社東芝 | 半導体装置の製造方法 |
| US6638835B2 (en) | 2001-12-11 | 2003-10-28 | Intel Corporation | Method for bonding and debonding films using a high-temperature polymer |
| US7367773B2 (en) | 2002-05-09 | 2008-05-06 | Maxtor Corporation | Apparatus for combining or separating disk pairs simultaneously |
| US6869894B2 (en) | 2002-12-20 | 2005-03-22 | General Chemical Corporation | Spin-on adhesive for temporary wafer coating and mounting to support wafer thinning and backside processing |
| US7226812B2 (en) | 2004-03-31 | 2007-06-05 | Intel Corporation | Wafer support and release in wafer processing |
| JP4629367B2 (ja) * | 2004-05-31 | 2011-02-09 | 東レ・ダウコーニング株式会社 | 活性エネルギー線硬化型オルガノポリシロキサン樹脂組成物、光伝送部材およびその製造方法 |
| US7462552B2 (en) | 2005-05-23 | 2008-12-09 | Ziptronix, Inc. | Method of detachable direct bonding at low temperatures |
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| DE102005055769A1 (de) | 2005-11-21 | 2007-05-24 | Tesa Ag | Verfahren zur temporären Fixierung eines polymeren Schichtmaterials auf rauen Oberflächen |
| DE102006031434B4 (de) | 2006-07-07 | 2019-11-14 | Erich Thallner | Handhabungsvorrichtung sowie Handhabungsverfahren für Wafer |
| US20080200011A1 (en) | 2006-10-06 | 2008-08-21 | Pillalamarri Sunil K | High-temperature, spin-on, bonding compositions for temporary wafer bonding using sliding approach |
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| TWI418602B (zh) | 2007-06-25 | 2013-12-11 | Brewer Science Inc | 高溫旋塗暫時結合組成物 |
| FR2925978B1 (fr) | 2007-12-28 | 2010-01-29 | Commissariat Energie Atomique | Procede et dispositif de separation d'une structure. |
| CA2711266A1 (en) | 2008-01-24 | 2009-07-30 | Brewer Science Inc. | Method for reversibly mounting a device wafer to a carrier substrate |
| DE102008018536B4 (de) | 2008-04-12 | 2020-08-13 | Erich Thallner | Vorrichtung und Verfahren zum Aufbringen und/oder Ablösen eines Wafers auf einen/von einem Träger |
| JP2010034098A (ja) | 2008-07-24 | 2010-02-12 | Seiko Epson Corp | 接合方法および接合体 |
| KR20120027237A (ko) * | 2009-04-16 | 2012-03-21 | 수스 마이크로텍 리소그라피 게엠바하 | 웨이퍼 가접합 및 분리를 위한 개선된 장치 |
| US9847243B2 (en) * | 2009-08-27 | 2017-12-19 | Corning Incorporated | Debonding a glass substrate from carrier using ultrasonic wave |
| US9263314B2 (en) | 2010-08-06 | 2016-02-16 | Brewer Science Inc. | Multiple bonding layers for thin-wafer handling |
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| KR102046534B1 (ko) | 2013-01-25 | 2019-11-19 | 삼성전자주식회사 | 기판 가공 방법 |
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-
2013
- 2013-03-08 US US13/790,684 patent/US9064686B2/en not_active Expired - Fee Related
- 2013-03-09 CN CN201380012296.2A patent/CN104145330B/zh not_active Expired - Fee Related
- 2013-03-09 KR KR1020147028409A patent/KR102050541B1/ko active IP Right Grant
- 2013-03-09 EP EP13729416.1A patent/EP2826065A1/en not_active Withdrawn
- 2013-03-09 JP JP2014561540A patent/JP6174059B2/ja not_active Expired - Fee Related
- 2013-03-09 WO PCT/IB2013/000907 patent/WO2013136188A1/en active Application Filing
-
2015
- 2015-05-18 US US14/714,587 patent/US20150251396A1/en not_active Abandoned
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1938845A (zh) * | 2004-03-26 | 2007-03-28 | 富士胶片株式会社 | 接合衬底的装置及方法 |
| US7232740B1 (en) * | 2005-05-16 | 2007-06-19 | The United States Of America As Represented By The National Security Agency | Method for bumping a thin wafer |
Also Published As
| Publication number | Publication date |
|---|---|
| US9064686B2 (en) | 2015-06-23 |
| CN104145330A (zh) | 2014-11-12 |
| KR102050541B1 (ko) | 2019-11-29 |
| WO2013136188A1 (en) | 2013-09-19 |
| JP6174059B2 (ja) | 2017-08-02 |
| KR20140138898A (ko) | 2014-12-04 |
| EP2826065A1 (en) | 2015-01-21 |
| US20150251396A1 (en) | 2015-09-10 |
| US20130244400A1 (en) | 2013-09-19 |
| JP2015517201A (ja) | 2015-06-18 |
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