CN104137418B - 开关电路 - Google Patents
开关电路 Download PDFInfo
- Publication number
- CN104137418B CN104137418B CN201380011008.1A CN201380011008A CN104137418B CN 104137418 B CN104137418 B CN 104137418B CN 201380011008 A CN201380011008 A CN 201380011008A CN 104137418 B CN104137418 B CN 104137418B
- Authority
- CN
- China
- Prior art keywords
- voltage
- circuit
- node
- terminal
- grid
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Classifications
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/06—Modifications for ensuring a fully conducting state
- H03K17/063—Modifications for ensuring a fully conducting state in field-effect transistor switches
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
- H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
- H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
- H03K17/6871—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors the output circuit comprising more than one controlled field-effect transistor
- H03K17/6872—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors the output circuit comprising more than one controlled field-effect transistor using complementary field-effect transistors
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
- H03K19/0175—Coupling arrangements; Interface arrangements
- H03K19/0185—Coupling arrangements; Interface arrangements using field effect transistors only
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K2217/00—Indexing scheme related to electronic switching or gating, i.e. not by contact-making or -breaking covered by H03K17/00
- H03K2217/0018—Special modifications or use of the back gate voltage of a FET
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K2217/00—Indexing scheme related to electronic switching or gating, i.e. not by contact-making or -breaking covered by H03K17/00
- H03K2217/0054—Gating switches, e.g. pass gates
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Computing Systems (AREA)
- General Engineering & Computer Science (AREA)
- Mathematical Physics (AREA)
- Electronic Switches (AREA)
- Logic Circuits (AREA)
Abstract
Description
Claims (1)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2012044156A JP5845112B2 (ja) | 2012-02-29 | 2012-02-29 | スイッチ回路 |
JP2012-044156 | 2012-02-29 | ||
PCT/JP2013/051706 WO2013128997A1 (ja) | 2012-02-29 | 2013-01-28 | スイッチ回路 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN104137418A CN104137418A (zh) | 2014-11-05 |
CN104137418B true CN104137418B (zh) | 2017-06-16 |
Family
ID=49082201
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201380011008.1A Active CN104137418B (zh) | 2012-02-29 | 2013-01-28 | 开关电路 |
Country Status (6)
Country | Link |
---|---|
US (1) | US9444451B2 (zh) |
JP (1) | JP5845112B2 (zh) |
KR (1) | KR101716941B1 (zh) |
CN (1) | CN104137418B (zh) |
TW (2) | TW201340602A (zh) |
WO (1) | WO2013128997A1 (zh) |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20150381160A1 (en) * | 2014-06-26 | 2015-12-31 | Infineon Technologies Ag | Robust multiplexer, and method for operating a robust multiplexer |
JP2016136681A (ja) * | 2015-01-23 | 2016-07-28 | エスアイアイ・セミコンダクタ株式会社 | スイッチ回路 |
US10236873B2 (en) | 2015-03-17 | 2019-03-19 | Xilinx, Inc. | Analog switch having reduced gate-induced drain leakage |
KR101638352B1 (ko) * | 2015-04-24 | 2016-07-13 | 주식회사 지니틱스 | 코일에 연결된 출력단자를 플로팅되도록 하는 회로를 갖는 코일 구동 ic |
EP3504676A4 (en) | 2016-08-26 | 2020-03-25 | Allstate Insurance Company | AUTOMATIC HELL DAMAGE DETECTION AND REPAIR |
JP7329411B2 (ja) * | 2019-10-18 | 2023-08-18 | エイブリック株式会社 | アナログスイッチ |
EP4329198A1 (en) * | 2022-08-23 | 2024-02-28 | Nexperia B.V. | Area efficient bidirectional switch with off state injection current control |
TW202425509A (zh) | 2022-12-14 | 2024-06-16 | 立積電子股份有限公司 | 開關裝置 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4985703A (en) * | 1988-02-03 | 1991-01-15 | Nec Corporation | Analog multiplexer |
CN102291108A (zh) * | 2010-04-19 | 2011-12-21 | 瑞萨电子株式会社 | 高频开关电路 |
CN102332901A (zh) * | 2011-08-15 | 2012-01-25 | 苏州佳世达电通有限公司 | 开关电路及显示装置 |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH01236731A (ja) * | 1988-03-16 | 1989-09-21 | Nec Corp | 相補型アナログスイッチ |
GB2319128A (en) * | 1996-10-30 | 1998-05-13 | Motorola Gmbh | A CMOS transmission gate multiplexer with improved OFF isolation |
EP0993119A1 (en) * | 1998-10-09 | 2000-04-12 | Mitsubishi Semiconductor Europe GmbH | Multiplexer circuit and analogue-to-digital converter |
JP2001051730A (ja) * | 1999-08-05 | 2001-02-23 | Fujitsu Ltd | スイッチ回路及びシリーズレギュレータ |
US6911860B1 (en) * | 2001-11-09 | 2005-06-28 | Altera Corporation | On/off reference voltage switch for multiple I/O standards |
JP2010206779A (ja) | 2009-02-06 | 2010-09-16 | Seiko Instruments Inc | スイッチ回路 |
WO2011079879A1 (en) * | 2009-12-30 | 2011-07-07 | Stmicroelectronics S.R.L. | Low voltage isolation switch, in particular for a transmission channel for ultrasound applications |
-
2012
- 2012-02-29 JP JP2012044156A patent/JP5845112B2/ja active Active
-
2013
- 2013-01-23 TW TW102102471A patent/TW201340602A/zh unknown
- 2013-01-23 TW TW105120564A patent/TWI575872B/zh active
- 2013-01-28 WO PCT/JP2013/051706 patent/WO2013128997A1/ja active Application Filing
- 2013-01-28 KR KR1020147023959A patent/KR101716941B1/ko active IP Right Grant
- 2013-01-28 CN CN201380011008.1A patent/CN104137418B/zh active Active
-
2014
- 2014-08-26 US US14/469,207 patent/US9444451B2/en active Active
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4985703A (en) * | 1988-02-03 | 1991-01-15 | Nec Corporation | Analog multiplexer |
CN102291108A (zh) * | 2010-04-19 | 2011-12-21 | 瑞萨电子株式会社 | 高频开关电路 |
CN102332901A (zh) * | 2011-08-15 | 2012-01-25 | 苏州佳世达电通有限公司 | 开关电路及显示装置 |
Also Published As
Publication number | Publication date |
---|---|
CN104137418A (zh) | 2014-11-05 |
KR20140138138A (ko) | 2014-12-03 |
WO2013128997A1 (ja) | 2013-09-06 |
US9444451B2 (en) | 2016-09-13 |
TWI575872B (zh) | 2017-03-21 |
KR101716941B1 (ko) | 2017-03-27 |
JP5845112B2 (ja) | 2016-01-20 |
JP2013183206A (ja) | 2013-09-12 |
TW201340602A (zh) | 2013-10-01 |
US20140361825A1 (en) | 2014-12-11 |
TW201637364A (zh) | 2016-10-16 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C41 | Transfer of patent application or patent right or utility model | ||
TA01 | Transfer of patent application right |
Effective date of registration: 20160330 Address after: Chiba County, Japan Applicant after: DynaFine Semiconductor Co.,Ltd. Address before: Chiba County, Japan Applicant before: Seiko Instruments Inc. |
|
GR01 | Patent grant | ||
CP01 | Change in the name or title of a patent holder |
Address after: Chiba County, Japan Patentee after: ABLIC Inc. Address before: Chiba County, Japan Patentee before: DynaFine Semiconductor Co.,Ltd. |
|
CP01 | Change in the name or title of a patent holder | ||
CP02 | Change in the address of a patent holder |
Address after: Nagano Patentee after: ABLIC Inc. Address before: Chiba County, Japan Patentee before: ABLIC Inc. |
|
CP02 | Change in the address of a patent holder |