CN104093784B - 低介电可光致成像组合物以及由其制得的电子器件 - Google Patents

低介电可光致成像组合物以及由其制得的电子器件 Download PDF

Info

Publication number
CN104093784B
CN104093784B CN201380006618.2A CN201380006618A CN104093784B CN 104093784 B CN104093784 B CN 104093784B CN 201380006618 A CN201380006618 A CN 201380006618A CN 104093784 B CN104093784 B CN 104093784B
Authority
CN
China
Prior art keywords
composition
polymer
group
substituted
coating
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201380006618.2A
Other languages
English (en)
Chinese (zh)
Other versions
CN104093784A (zh
Inventor
张汝志
金志勋
B·K·帕泰尔
E·沃尔佛
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Wisdom Buy
Merck Patent GmbH
AZ Electronic Materials Japan Co Ltd
Original Assignee
AZ Electronic Materials Luxembourg SARL
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by AZ Electronic Materials Luxembourg SARL filed Critical AZ Electronic Materials Luxembourg SARL
Publication of CN104093784A publication Critical patent/CN104093784A/zh
Application granted granted Critical
Publication of CN104093784B publication Critical patent/CN104093784B/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L83/00—Compositions of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon only; Compositions of derivatives of such polymers
    • C08L83/04—Polysiloxanes
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/075—Silicon-containing compounds
    • G03F7/0757—Macromolecular compounds containing Si-O, Si-C or Si-N bonds
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/075—Silicon-containing compounds
    • G03F7/0757—Macromolecular compounds containing Si-O, Si-C or Si-N bonds
    • G03F7/0758—Macromolecular compounds containing Si-O, Si-C or Si-N bonds with silicon- containing groups in the side chains
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6342—Liquid deposition, e.g. spin-coating, sol-gel techniques or spray coating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6921—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon
    • H10P14/6922—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material containing Si, O and at least one of H, N, C, F or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/45—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their insulating parts
    • H10W20/48—Insulating materials thereof
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
    • Y10T428/24802—Discontinuous or differential coating, impregnation or bond [e.g., artwork, printing, retouched photograph, etc.]

Landscapes

  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Organic Chemistry (AREA)
  • Materials For Photolithography (AREA)
  • Formation Of Insulating Films (AREA)
CN201380006618.2A 2012-02-09 2013-02-08 低介电可光致成像组合物以及由其制得的电子器件 Active CN104093784B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US13/369,809 2012-02-09
US13/369,809 US8871425B2 (en) 2012-02-09 2012-02-09 Low dielectric photoimageable compositions and electronic devices made therefrom
PCT/IB2013/000170 WO2013117989A1 (en) 2012-02-09 2013-02-08 Low dielectric photoimageable compositions and electronic devices made therefrom

Publications (2)

Publication Number Publication Date
CN104093784A CN104093784A (zh) 2014-10-08
CN104093784B true CN104093784B (zh) 2016-09-21

Family

ID=47913498

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201380006618.2A Active CN104093784B (zh) 2012-02-09 2013-02-08 低介电可光致成像组合物以及由其制得的电子器件

Country Status (9)

Country Link
US (1) US8871425B2 (https=)
EP (1) EP2812399B1 (https=)
JP (1) JP5941559B2 (https=)
KR (1) KR101904582B1 (https=)
CN (1) CN104093784B (https=)
PH (1) PH12014501731A1 (https=)
SG (1) SG11201403059WA (https=)
TW (1) TWI544280B (https=)
WO (1) WO2013117989A1 (https=)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6213270B2 (ja) * 2014-01-31 2017-10-18 住友化学株式会社 Ｕｖ−ｌｅｄ用ポリシルセスキオキサン系封止材組成物及びそのための溶媒の使用
CN104282250B (zh) * 2014-10-24 2016-08-31 深圳市华星光电技术有限公司 Tft 中mis 结构设计的控制方法及系统
JP6803842B2 (ja) 2015-04-13 2020-12-23 ハネウェル・インターナショナル・インコーポレーテッドＨｏｎｅｙｗｅｌｌ Ｉｎｔｅｒｎａｔｉｏｎａｌ Ｉｎｃ． オプトエレクトロニクス用途のためのポリシロキサン製剤及びコーティング
US10254650B2 (en) * 2016-06-29 2019-04-09 Honeywell International Inc. Low temperature SC1 strippable oxysilane-containing coatings
CN109642151A (zh) 2016-08-22 2019-04-16 默克专利股份有限公司 用于光学器件的混合物
WO2018050526A1 (en) 2016-09-13 2018-03-22 Merck Patent Gmbh Light luminescent particle
US10544330B2 (en) 2017-01-20 2020-01-28 Honeywell International Inc. Gap filling dielectric materials
JP2021005625A (ja) * 2019-06-26 2021-01-14 メルク、パテント、ゲゼルシャフト、ミット、ベシュレンクテル、ハフツングＭｅｒｃｋ Ｐａｔｅｎｔ ＧｍｂＨ ゲート絶縁膜形成組成物

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1978572A2 (en) * 2007-04-02 2008-10-08 Xerox Corporation Phase-separated dielectric structure fabrication process

Family Cites Families (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4442197A (en) 1982-01-11 1984-04-10 General Electric Company Photocurable compositions
EP0153904B1 (de) 1984-02-10 1988-09-14 Ciba-Geigy Ag Verfahren zur Herstellung einer Schutzschicht oder einer Reliefabbildung
US4603101A (en) 1985-09-27 1986-07-29 General Electric Company Photoresist compositions containing t-substituted organomethyl vinylaryl ether materials
JPH06148895A (ja) 1992-11-06 1994-05-27 Toray Ind Inc 感光性樹脂組成物およびこれを用いたパターン形成方法
TW526390B (en) 1997-06-26 2003-04-01 Shinetsu Chemical Co Resist compositions
US5962067A (en) * 1997-09-09 1999-10-05 Lucent Technologies Inc. Method for coating an article with a ladder siloxane polymer and coated article
TW588072B (en) 2000-10-10 2004-05-21 Shipley Co Llc Antireflective porogens
TW594416B (en) * 2001-05-08 2004-06-21 Shipley Co Llc Photoimageable composition
US7018678B2 (en) * 2002-06-03 2006-03-28 Shipley Company, L.L.C. Electronic device manufacture
US7041748B2 (en) * 2003-01-08 2006-05-09 International Business Machines Corporation Patternable low dielectric constant materials and their use in ULSI interconnection
JP5102428B2 (ja) * 2003-11-25 2012-12-19 ローム・アンド・ハース・エレクトロニック・マテリアルズ，エル．エル．シー． 導波路組成物およびこれから形成された導波路
EP1586603B1 (en) * 2004-04-14 2007-06-13 Rohm and Haas Electronic Materials LLC Waveguide compositions and waveguides formed therefrom
JP4491283B2 (ja) * 2004-06-10 2010-06-30 信越化学工業株式会社 反射防止膜形成用組成物を用いたパターン形成方法
DE602006018976D1 (de) * 2005-09-29 2011-01-27 Dow Corning Verfahren zum abtrennen von hochtemperaturfilmen und/oder vorrichtungen von metallsubstraten
US8013077B2 (en) * 2007-03-02 2011-09-06 Fujifilm Corporation Insulating film forming composition and production method of insulating film
EP2071400A1 (en) * 2007-11-12 2009-06-17 Rohm and Haas Electronic Materials LLC Coating compositions for use with an overcoated photoresist
TWI384025B (zh) * 2009-04-27 2013-02-01 Ind Tech Res Inst 聚乙烯醇膜組成物及包含其之偏光板
US8196655B2 (en) * 2009-08-31 2012-06-12 Halliburton Energy Services, Inc. Selective placement of conformance treatments in multi-zone well completions
US8431670B2 (en) 2009-08-31 2013-04-30 International Business Machines Corporation Photo-patternable dielectric materials and formulations and methods of use
US8389663B2 (en) * 2009-10-08 2013-03-05 International Business Machines Corporation Photo-patternable dielectric materials curable to porous dielectric materials, formulations, precursors and methods of use thereof
JP2011154214A (ja) * 2010-01-27 2011-08-11 Jsr Corp ネガ型感放射線性組成物、硬化パターン形成方法及び硬化パターン
JP5544239B2 (ja) * 2010-07-29 2014-07-09 富士フイルム株式会社 重合性組成物
CN103443707A (zh) * 2011-03-30 2013-12-11 日本瑞翁株式会社 树脂组合物和半导体元件基板

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1978572A2 (en) * 2007-04-02 2008-10-08 Xerox Corporation Phase-separated dielectric structure fabrication process

Also Published As

Publication number Publication date
EP2812399A1 (en) 2014-12-17
US20130209754A1 (en) 2013-08-15
KR20140117391A (ko) 2014-10-07
JP5941559B2 (ja) 2016-06-29
PH12014501731B1 (en) 2014-11-17
KR101904582B1 (ko) 2018-10-04
TWI544280B (zh) 2016-08-01
WO2013117989A1 (en) 2013-08-15
PH12014501731A1 (en) 2014-11-17
TW201341963A (zh) 2013-10-16
US8871425B2 (en) 2014-10-28
SG11201403059WA (en) 2014-07-30
JP2015508184A (ja) 2015-03-16
EP2812399B1 (en) 2016-04-20
CN104093784A (zh) 2014-10-08

Similar Documents

Publication Publication Date Title
CN104093784B (zh) 低介电可光致成像组合物以及由其制得的电子器件
JP6180046B2 (ja) フォトリソグラフィ方法
JP4530284B2 (ja) ポリイミド系光硬化性樹脂組成物並びにパターン形成方法及び基板保護用皮膜
TWI642698B (zh) 作為硬光罩及填充材料之穩定金屬化合物、其組合物及其使用方法
JP6012600B2 (ja) フォトレジストパターン上にコーティングするための組成物
JP5708938B2 (ja) 感光性レジスト下層膜形成組成物及びレジストパターンの形成方法
KR101316200B1 (ko) 규소 함유막 형성용 조성물, 규소 함유막, 규소 함유막형성 기판 및 이를 이용한 패턴 형성 방법
KR102066468B1 (ko) 포토리소그래피용 조성물 및 반사방지 코팅
TWI666257B (zh) 含有熱鹼產生劑之光可成像組成物
KR101713689B1 (ko) 패턴 반전막 형성용 조성물 및 반전 패턴 형성 방법
US7018776B2 (en) Stable non-photosensitive polyimide precursor compositions for use in bilayer imaging systems
US10634998B2 (en) Photoimageable polyolefin compositions containing photobase generators
US12197127B2 (en) Negative photosensitive resin composition, patterning process, method for forming cured film, interlayer insulation film, surface protective film, and electronic component
KR20100131953A (ko) 포토리소그래피 방법
JP4911454B2 (ja) ポリベンゾオキサゾール前駆体、それを用いた感光性樹脂組成物及び半導体装置の製造方法
JP2021155467A (ja) 樹脂、感光性樹脂組成物、硬化物、有機ｅｌ表示装置、半導体装置および硬化物の製造方法
US20250068076A1 (en) Resist underlayer composition and method of forming patterns using the composition
US20250348002A1 (en) Resist underlayer compositions and methods of forming patterns using the compositions
JP2007304506A (ja) 感光性樹脂組成物及びそれを用いた半導体装置の製造方法
JP2008115265A (ja) ポリベンゾオキサゾール前駆体、それを用いた感光性樹脂組成物及び半導体装置の製造方法

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant
CP02 Change in the address of a patent holder

Address after: Luxemburg L-1648 II 46 square,

Patentee after: AZ ELECTRONIC MATERIALS (LUXEMBOURG) S.A.R.L.

Address before: Luxemburg Luxemburg

Patentee before: AZ ELECTRONIC MATERIALS (LUXEMBOURG) S.A.R.L.

CP02 Change in the address of a patent holder
TR01 Transfer of patent right

Effective date of registration: 20201223

Address after: Darmstadt

Patentee after: AZ Electronic Materials Co.,Ltd.

Address before: Lu Senbaolusenbao

Patentee before: AZ Electronic Materials Co.,Ltd.

Effective date of registration: 20201223

Address after: Lu Senbaolusenbao

Patentee after: AZ Electronic Materials Co.,Ltd.

Address before: Lu Senbaolusenbao

Patentee before: Wisdom Buy

Effective date of registration: 20201223

Address after: Darmstadt

Patentee after: MERCK PATENT GmbH

Address before: Darmstadt

Patentee before: AZ Electronic Materials Co.,Ltd.

Effective date of registration: 20201223

Address after: Lu Senbaolusenbao

Patentee after: Wisdom Buy

Address before: Luxemburg L-1648 II 46 square,

Patentee before: AZ ELECTRONIC MATERIALS (LUXEMBOURG) S.A.R.L.

TR01 Transfer of patent right