KR101904582B1 - 저 유전체 감광성 조성물 및 이로부터 제조된 전자 디바이스 - Google Patents

저 유전체 감광성 조성물 및 이로부터 제조된 전자 디바이스 Download PDF

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KR101904582B1
KR101904582B1 KR1020147018889A KR20147018889A KR101904582B1 KR 101904582 B1 KR101904582 B1 KR 101904582B1 KR 1020147018889 A KR1020147018889 A KR 1020147018889A KR 20147018889 A KR20147018889 A KR 20147018889A KR 101904582 B1 KR101904582 B1 KR 101904582B1
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polymer
substituted
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composition
vinyl
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KR20140117391A (ko
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루즈히 장
지훈 김
브하라트쿠마르 케이 파텔
엘리자베스 울퍼
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에이제트 일렉트로닉 머티어리얼스 (룩셈부르크) 에스.에이.알.엘.
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Assigned to 리지필드 액퀴지션 reassignment 리지필드 액퀴지션 권리의 전부이전등록 Assignors: 에이제트 일렉트로닉 머티어리얼스 (룩셈부르크) 에스.에이.알.엘.
Assigned to 에이제트 일렉트로닉 머터리얼스 게엠베하 reassignment 에이제트 일렉트로닉 머터리얼스 게엠베하 권리의 전부이전등록 Assignors: 리지필드 액퀴지션
Assigned to 메르크 파텐트 게엠베하 reassignment 메르크 파텐트 게엠베하 권리의 전부이전등록 Assignors: 에이제트 일렉트로닉 머터리얼스 게엠베하
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    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L83/00—Compositions of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon only; Compositions of derivatives of such polymers
    • C08L83/04—Polysiloxanes
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/075—Silicon-containing compounds
    • G03F7/0757—Macromolecular compounds containing Si-O, Si-C or Si-N bonds
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/075—Silicon-containing compounds
    • G03F7/0757—Macromolecular compounds containing Si-O, Si-C or Si-N bonds
    • G03F7/0758—Macromolecular compounds containing Si-O, Si-C or Si-N bonds with silicon- containing groups in the side chains
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6342—Liquid deposition, e.g. spin-coating, sol-gel techniques or spray coating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6921—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon
    • H10P14/6922—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material containing Si, O and at least one of H, N, C, F or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/45—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their insulating parts
    • H10W20/48—Insulating materials thereof
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
    • Y10T428/24802—Discontinuous or differential coating, impregnation or bond [e.g., artwork, printing, retouched photograph, etc.]

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  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Organic Chemistry (AREA)
  • Materials For Photolithography (AREA)
  • Formation Of Insulating Films (AREA)
KR1020147018889A 2012-02-09 2013-02-08 저 유전체 감광성 조성물 및 이로부터 제조된 전자 디바이스 Active KR101904582B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US13/369,809 2012-02-09
US13/369,809 US8871425B2 (en) 2012-02-09 2012-02-09 Low dielectric photoimageable compositions and electronic devices made therefrom
PCT/IB2013/000170 WO2013117989A1 (en) 2012-02-09 2013-02-08 Low dielectric photoimageable compositions and electronic devices made therefrom

Publications (2)

Publication Number Publication Date
KR20140117391A KR20140117391A (ko) 2014-10-07
KR101904582B1 true KR101904582B1 (ko) 2018-10-04

Family

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KR1020147018889A Active KR101904582B1 (ko) 2012-02-09 2013-02-08 저 유전체 감광성 조성물 및 이로부터 제조된 전자 디바이스

Country Status (9)

Country Link
US (1) US8871425B2 (https=)
EP (1) EP2812399B1 (https=)
JP (1) JP5941559B2 (https=)
KR (1) KR101904582B1 (https=)
CN (1) CN104093784B (https=)
PH (1) PH12014501731A1 (https=)
SG (1) SG11201403059WA (https=)
TW (1) TWI544280B (https=)
WO (1) WO2013117989A1 (https=)

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JP6213270B2 (ja) * 2014-01-31 2017-10-18 住友化学株式会社 Ｕｖ−ｌｅｄ用ポリシルセスキオキサン系封止材組成物及びそのための溶媒の使用
CN104282250B (zh) * 2014-10-24 2016-08-31 深圳市华星光电技术有限公司 Tft 中mis 结构设计的控制方法及系统
JP6803842B2 (ja) 2015-04-13 2020-12-23 ハネウェル・インターナショナル・インコーポレーテッドＨｏｎｅｙｗｅｌｌ Ｉｎｔｅｒｎａｔｉｏｎａｌ Ｉｎｃ． オプトエレクトロニクス用途のためのポリシロキサン製剤及びコーティング
US10254650B2 (en) * 2016-06-29 2019-04-09 Honeywell International Inc. Low temperature SC1 strippable oxysilane-containing coatings
CN109642151A (zh) 2016-08-22 2019-04-16 默克专利股份有限公司 用于光学器件的混合物
WO2018050526A1 (en) 2016-09-13 2018-03-22 Merck Patent Gmbh Light luminescent particle
US10544330B2 (en) 2017-01-20 2020-01-28 Honeywell International Inc. Gap filling dielectric materials
JP2021005625A (ja) * 2019-06-26 2021-01-14 メルク、パテント、ゲゼルシャフト、ミット、ベシュレンクテル、ハフツングＭｅｒｃｋ Ｐａｔｅｎｔ ＧｍｂＨ ゲート絶縁膜形成組成物

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EP0153904B1 (de) 1984-02-10 1988-09-14 Ciba-Geigy Ag Verfahren zur Herstellung einer Schutzschicht oder einer Reliefabbildung
US4603101A (en) 1985-09-27 1986-07-29 General Electric Company Photoresist compositions containing t-substituted organomethyl vinylaryl ether materials
JPH06148895A (ja) 1992-11-06 1994-05-27 Toray Ind Inc 感光性樹脂組成物およびこれを用いたパターン形成方法
TW526390B (en) 1997-06-26 2003-04-01 Shinetsu Chemical Co Resist compositions
US5962067A (en) * 1997-09-09 1999-10-05 Lucent Technologies Inc. Method for coating an article with a ladder siloxane polymer and coated article
TW588072B (en) 2000-10-10 2004-05-21 Shipley Co Llc Antireflective porogens
TW594416B (en) * 2001-05-08 2004-06-21 Shipley Co Llc Photoimageable composition
US7018678B2 (en) * 2002-06-03 2006-03-28 Shipley Company, L.L.C. Electronic device manufacture
US7041748B2 (en) * 2003-01-08 2006-05-09 International Business Machines Corporation Patternable low dielectric constant materials and their use in ULSI interconnection
JP5102428B2 (ja) * 2003-11-25 2012-12-19 ローム・アンド・ハース・エレクトロニック・マテリアルズ，エル．エル．シー． 導波路組成物およびこれから形成された導波路
EP1586603B1 (en) * 2004-04-14 2007-06-13 Rohm and Haas Electronic Materials LLC Waveguide compositions and waveguides formed therefrom
JP4491283B2 (ja) * 2004-06-10 2010-06-30 信越化学工業株式会社 反射防止膜形成用組成物を用いたパターン形成方法
DE602006018976D1 (de) * 2005-09-29 2011-01-27 Dow Corning Verfahren zum abtrennen von hochtemperaturfilmen und/oder vorrichtungen von metallsubstraten
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Also Published As

Publication number Publication date
EP2812399A1 (en) 2014-12-17
CN104093784B (zh) 2016-09-21
US20130209754A1 (en) 2013-08-15
KR20140117391A (ko) 2014-10-07
JP5941559B2 (ja) 2016-06-29
PH12014501731B1 (en) 2014-11-17
TWI544280B (zh) 2016-08-01
WO2013117989A1 (en) 2013-08-15
PH12014501731A1 (en) 2014-11-17
TW201341963A (zh) 2013-10-16
US8871425B2 (en) 2014-10-28
SG11201403059WA (en) 2014-07-30
JP2015508184A (ja) 2015-03-16
EP2812399B1 (en) 2016-04-20
CN104093784A (zh) 2014-10-08

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