PH12014501731A1 - Low dielectric photoimageable compositions and electronic devices made therefrom - Google Patents

Low dielectric photoimageable compositions and electronic devices made therefrom

Info

Publication number
PH12014501731A1
PH12014501731A1 PH12014501731A PH12014501731A PH12014501731A1 PH 12014501731 A1 PH12014501731 A1 PH 12014501731A1 PH 12014501731 A PH12014501731 A PH 12014501731A PH 12014501731 A PH12014501731 A PH 12014501731A PH 12014501731 A1 PH12014501731 A1 PH 12014501731A1
Authority
PH
Philippines
Prior art keywords
electronic devices
made therefrom
devices made
low dielectric
photoimageable compositions
Prior art date
Application number
PH12014501731A
Other languages
English (en)
Other versions
PH12014501731B1 (en
Inventor
Zhang Ruzhi
Kim Jihoon
Bharatkumar K Patel
Wolfer Elizabeth
Original Assignee
Az Electronic Mat S A R L
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Az Electronic Mat S A R L filed Critical Az Electronic Mat S A R L
Publication of PH12014501731B1 publication Critical patent/PH12014501731B1/en
Publication of PH12014501731A1 publication Critical patent/PH12014501731A1/en

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08LCOMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L83/00Compositions of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon only; Compositions of derivatives of such polymers
    • C08L83/04Polysiloxanes
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/038Macromolecular compounds which are rendered insoluble or differentially wettable
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/075Silicon-containing compounds
    • G03F7/0757Macromolecular compounds containing Si-O, Si-C or Si-N bonds
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/075Silicon-containing compounds
    • G03F7/0757Macromolecular compounds containing Si-O, Si-C or Si-N bonds
    • G03F7/0758Macromolecular compounds containing Si-O, Si-C or Si-N bonds with silicon- containing groups in the side chains
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326Deposition processes
    • H10P14/6342Liquid deposition, e.g. spin-coating, sol-gel techniques or spray coating
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69Inorganic materials
    • H10P14/692Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6921Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon
    • H10P14/6922Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material containing Si, O and at least one of H, N, C, F or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00Interconnections in chips, wafers or substrates
    • H10W20/40Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/45Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their insulating parts
    • H10W20/48Insulating materials thereof
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00Stock material or miscellaneous articles
    • Y10T428/24Structurally defined web or sheet [e.g., overall dimension, etc.]
    • Y10T428/24802Discontinuous or differential coating, impregnation or bond [e.g., artwork, printing, retouched photograph, etc.]

Landscapes

  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Organic Chemistry (AREA)
  • Materials For Photolithography (AREA)
  • Formation Of Insulating Films (AREA)
PH12014501731A 2012-02-09 2014-07-31 Low dielectric photoimageable compositions and electronic devices made therefrom PH12014501731A1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US13/369,809 US8871425B2 (en) 2012-02-09 2012-02-09 Low dielectric photoimageable compositions and electronic devices made therefrom
PCT/IB2013/000170 WO2013117989A1 (en) 2012-02-09 2013-02-08 Low dielectric photoimageable compositions and electronic devices made therefrom

Publications (2)

Publication Number Publication Date
PH12014501731B1 PH12014501731B1 (en) 2014-11-17
PH12014501731A1 true PH12014501731A1 (en) 2014-11-17

Family

ID=47913498

Family Applications (1)

Application Number Title Priority Date Filing Date
PH12014501731A PH12014501731A1 (en) 2012-02-09 2014-07-31 Low dielectric photoimageable compositions and electronic devices made therefrom

Country Status (9)

Country Link
US (1) US8871425B2 (https=)
EP (1) EP2812399B1 (https=)
JP (1) JP5941559B2 (https=)
KR (1) KR101904582B1 (https=)
CN (1) CN104093784B (https=)
PH (1) PH12014501731A1 (https=)
SG (1) SG11201403059WA (https=)
TW (1) TWI544280B (https=)
WO (1) WO2013117989A1 (https=)

Families Citing this family (8)

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JP6213270B2 (ja) * 2014-01-31 2017-10-18 住友化学株式会社 Uv−led用ポリシルセスキオキサン系封止材組成物及びそのための溶媒の使用
CN104282250B (zh) * 2014-10-24 2016-08-31 深圳市华星光电技术有限公司 Tft 中mis 结构设计的控制方法及系统
JP6803842B2 (ja) 2015-04-13 2020-12-23 ハネウェル・インターナショナル・インコーポレーテッドHoneywell International Inc. オプトエレクトロニクス用途のためのポリシロキサン製剤及びコーティング
US10254650B2 (en) * 2016-06-29 2019-04-09 Honeywell International Inc. Low temperature SC1 strippable oxysilane-containing coatings
CN109642151A (zh) 2016-08-22 2019-04-16 默克专利股份有限公司 用于光学器件的混合物
WO2018050526A1 (en) 2016-09-13 2018-03-22 Merck Patent Gmbh Light luminescent particle
US10544330B2 (en) 2017-01-20 2020-01-28 Honeywell International Inc. Gap filling dielectric materials
JP2021005625A (ja) * 2019-06-26 2021-01-14 メルク、パテント、ゲゼルシャフト、ミット、ベシュレンクテル、ハフツングMerck Patent GmbH ゲート絶縁膜形成組成物

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US4442197A (en) 1982-01-11 1984-04-10 General Electric Company Photocurable compositions
EP0153904B1 (de) 1984-02-10 1988-09-14 Ciba-Geigy Ag Verfahren zur Herstellung einer Schutzschicht oder einer Reliefabbildung
US4603101A (en) 1985-09-27 1986-07-29 General Electric Company Photoresist compositions containing t-substituted organomethyl vinylaryl ether materials
JPH06148895A (ja) 1992-11-06 1994-05-27 Toray Ind Inc 感光性樹脂組成物およびこれを用いたパターン形成方法
TW526390B (en) 1997-06-26 2003-04-01 Shinetsu Chemical Co Resist compositions
US5962067A (en) * 1997-09-09 1999-10-05 Lucent Technologies Inc. Method for coating an article with a ladder siloxane polymer and coated article
TW588072B (en) 2000-10-10 2004-05-21 Shipley Co Llc Antireflective porogens
TW594416B (en) * 2001-05-08 2004-06-21 Shipley Co Llc Photoimageable composition
US7018678B2 (en) * 2002-06-03 2006-03-28 Shipley Company, L.L.C. Electronic device manufacture
US7041748B2 (en) * 2003-01-08 2006-05-09 International Business Machines Corporation Patternable low dielectric constant materials and their use in ULSI interconnection
JP5102428B2 (ja) * 2003-11-25 2012-12-19 ローム・アンド・ハース・エレクトロニック・マテリアルズ,エル.エル.シー. 導波路組成物およびこれから形成された導波路
EP1586603B1 (en) * 2004-04-14 2007-06-13 Rohm and Haas Electronic Materials LLC Waveguide compositions and waveguides formed therefrom
JP4491283B2 (ja) * 2004-06-10 2010-06-30 信越化学工業株式会社 反射防止膜形成用組成物を用いたパターン形成方法
DE602006018976D1 (de) * 2005-09-29 2011-01-27 Dow Corning Verfahren zum abtrennen von hochtemperaturfilmen und/oder vorrichtungen von metallsubstraten
US8013077B2 (en) * 2007-03-02 2011-09-06 Fujifilm Corporation Insulating film forming composition and production method of insulating film
US7754510B2 (en) * 2007-04-02 2010-07-13 Xerox Corporation Phase-separated dielectric structure fabrication process
EP2071400A1 (en) * 2007-11-12 2009-06-17 Rohm and Haas Electronic Materials LLC Coating compositions for use with an overcoated photoresist
TWI384025B (zh) * 2009-04-27 2013-02-01 Ind Tech Res Inst 聚乙烯醇膜組成物及包含其之偏光板
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CN103443707A (zh) * 2011-03-30 2013-12-11 日本瑞翁株式会社 树脂组合物和半导体元件基板

Also Published As

Publication number Publication date
EP2812399A1 (en) 2014-12-17
CN104093784B (zh) 2016-09-21
US20130209754A1 (en) 2013-08-15
KR20140117391A (ko) 2014-10-07
JP5941559B2 (ja) 2016-06-29
PH12014501731B1 (en) 2014-11-17
KR101904582B1 (ko) 2018-10-04
TWI544280B (zh) 2016-08-01
WO2013117989A1 (en) 2013-08-15
TW201341963A (zh) 2013-10-16
US8871425B2 (en) 2014-10-28
SG11201403059WA (en) 2014-07-30
JP2015508184A (ja) 2015-03-16
EP2812399B1 (en) 2016-04-20
CN104093784A (zh) 2014-10-08

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