CN104009725B - 电子装置、封装件、电子设备以及移动体 - Google Patents

电子装置、封装件、电子设备以及移动体 Download PDF

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Publication number
CN104009725B
CN104009725B CN201410053906.XA CN201410053906A CN104009725B CN 104009725 B CN104009725 B CN 104009725B CN 201410053906 A CN201410053906 A CN 201410053906A CN 104009725 B CN104009725 B CN 104009725B
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CN
China
Prior art keywords
wiring layer
electronic device
pads
physical quantity
sensor element
Prior art date
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Application number
CN201410053906.XA
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English (en)
Chinese (zh)
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CN104009725A (zh
Inventor
青木信也
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Epson Corp
Original Assignee
Seiko Epson Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Epson Corp filed Critical Seiko Epson Corp
Publication of CN104009725A publication Critical patent/CN104009725A/zh
Application granted granted Critical
Publication of CN104009725B publication Critical patent/CN104009725B/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • GPHYSICS
    • G01MEASURING; TESTING
    • G01CMEASURING DISTANCES, LEVELS OR BEARINGS; SURVEYING; NAVIGATION; GYROSCOPIC INSTRUMENTS; PHOTOGRAMMETRY OR VIDEOGRAMMETRY
    • G01C19/00Gyroscopes; Turn-sensitive devices using vibrating masses; Turn-sensitive devices without moving masses; Measuring angular rate using gyroscopic effects
    • G01C19/56Turn-sensitive devices using vibrating masses, e.g. vibratory angular rate sensors based on Coriolis forces
    • G01C19/5607Turn-sensitive devices using vibrating masses, e.g. vibratory angular rate sensors based on Coriolis forces using vibrating tuning forks
    • G01C19/5628Manufacturing; Trimming; Mounting; Housings
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60Insulating or insulated package substrates; Interposers; Redistribution layers
    • H10W70/67Insulating or insulated package substrates; Interposers; Redistribution layers characterised by their insulating layers or insulating parts
    • H10W70/68Shapes or dispositions thereof
    • H10W70/681Shapes or dispositions thereof comprising holes not having chips therein, e.g. for outgassing, underfilling or bond wire passage
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60Insulating or insulated package substrates; Interposers; Redistribution layers
    • H10W70/67Insulating or insulated package substrates; Interposers; Redistribution layers characterised by their insulating layers or insulating parts
    • H10W70/68Shapes or dispositions thereof
    • H10W70/682Shapes or dispositions thereof comprising holes having chips therein
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/50Bond wires
    • H10W72/551Materials of bond wires
    • H10W72/552Materials of bond wires comprising metals or metalloids, e.g. silver
    • H10W72/5522Materials of bond wires comprising metals or metalloids, e.g. silver comprising gold [Au]
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/50Bond wires
    • H10W72/551Materials of bond wires
    • H10W72/552Materials of bond wires comprising metals or metalloids, e.g. silver
    • H10W72/5524Materials of bond wires comprising metals or metalloids, e.g. silver comprising aluminium [Al]
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/50Bond wires
    • H10W72/551Materials of bond wires
    • H10W72/552Materials of bond wires comprising metals or metalloids, e.g. silver
    • H10W72/5525Materials of bond wires comprising metals or metalloids, e.g. silver comprising copper [Cu]
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/851Dispositions of multiple connectors or interconnections
    • H10W72/874On different surfaces
    • H10W72/884Die-attach connectors and bond wires
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00Package configurations
    • H10W90/701Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/731Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors
    • H10W90/734Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors between a chip and a stacked insulating package substrate, interposer or RDL
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00Package configurations
    • H10W90/701Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/754Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked insulating package substrate, interposer or RDL

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Radar, Positioning & Navigation (AREA)
  • Remote Sensing (AREA)
  • Gyroscopes (AREA)
  • Oscillators With Electromechanical Resonators (AREA)
  • Wire Bonding (AREA)
CN201410053906.XA 2013-02-22 2014-02-17 电子装置、封装件、电子设备以及移动体 Active CN104009725B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2013-032941 2013-02-22
JP2013032941A JP6136349B2 (ja) 2013-02-22 2013-02-22 電子デバイス、電子機器及び移動体

Publications (2)

Publication Number Publication Date
CN104009725A CN104009725A (zh) 2014-08-27
CN104009725B true CN104009725B (zh) 2018-04-24

Family

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Family Applications (1)

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CN201410053906.XA Active CN104009725B (zh) 2013-02-22 2014-02-17 电子装置、封装件、电子设备以及移动体

Country Status (3)

Country Link
US (1) US20140239422A1 (enExample)
JP (1) JP6136349B2 (enExample)
CN (1) CN104009725B (enExample)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101398016B1 (ko) * 2012-08-08 2014-05-30 앰코 테크놀로지 코리아 주식회사 리드 프레임 패키지 및 그 제조 방법
JP6348534B2 (ja) * 2016-04-21 2018-06-27 田中貴金属工業株式会社 貫通孔の封止構造及び封止方法、並びに、貫通孔を封止するための転写基板
JP2018173343A (ja) * 2017-03-31 2018-11-08 セイコーエプソン株式会社 力検出装置およびロボット
JP2019062111A (ja) * 2017-09-27 2019-04-18 日本航空電子工業株式会社 パッケージ封止構造及びデバイス用パッケージ
JP7321688B2 (ja) 2017-09-29 2023-08-07 キヤノン株式会社 振動波アクチュエータ及びそれを用いた撮像装置、ステージ装置
JP7087479B2 (ja) * 2018-03-09 2022-06-21 セイコーエプソン株式会社 物理量センサー、物理量センサーデバイス、物理量センサーデバイスを用いた傾斜計、慣性計測装置、構造物監視装置、及び移動体
JP7236321B2 (ja) 2019-05-16 2023-03-09 日東電工株式会社 配線回路基板
CN112447653B (zh) * 2019-08-30 2024-08-27 Tdk株式会社 传感器用封装基板及具备其的传感器模块以及电子部件内置基板
JP2021177515A (ja) * 2020-05-07 2021-11-11 富士通株式会社 基板ユニット

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59143342A (ja) * 1983-02-07 1984-08-16 Hitachi Ltd 論理変更可能な半導体装置
JP2006114976A (ja) * 2004-10-12 2006-04-27 Epson Toyocom Corp 圧電発振器
CN1905168A (zh) * 2005-07-27 2007-01-31 冲电气工业株式会社 半导体器件及其制造方法以及在其中所使用的粘接材料及其制造方法
CN101170090A (zh) * 2006-10-23 2008-04-30 三洋电机株式会社 半导体装置及其制造方法
CN102867836A (zh) * 2011-07-07 2013-01-09 索尼公司 固态图像传感装置和电子设备

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* Cited by examiner, † Cited by third party
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US5310965A (en) * 1991-08-28 1994-05-10 Nec Corporation Multi-level wiring structure having an organic interlayer insulating film
US5672911A (en) * 1996-05-30 1997-09-30 Lsi Logic Corporation Apparatus to decouple core circuits power supply from input-output circuits power supply in a semiconductor device package
KR100294449B1 (ko) * 1998-07-15 2001-07-12 윤종용 본딩패드하부에형성되는커패시터를구비한반도체집적회로장치
JP4626919B2 (ja) * 2001-03-27 2011-02-09 ルネサスエレクトロニクス株式会社 半導体装置
JP2004356687A (ja) * 2003-05-27 2004-12-16 Daishinku Corp 圧電振動デバイスの製造方法およびその方法によって製造された圧電振動デバイス
US8183663B2 (en) * 2008-12-18 2012-05-22 Samsung Electronics Co., Ltd. Crack resistant circuit under pad structure and method of manufacturing the same
JP2011182306A (ja) * 2010-03-03 2011-09-15 Seiko Epson Corp 圧電デバイスおよびその製造方法
JP2011239256A (ja) * 2010-05-12 2011-11-24 Seiko Epson Corp 振動片、振動子、発振器、および電子機器
JP2012090203A (ja) * 2010-10-22 2012-05-10 Seiko Epson Corp 圧電発振器
JP5678727B2 (ja) * 2011-03-03 2015-03-04 セイコーエプソン株式会社 振動デバイス、振動デバイスの製造方法、電子機器
JP5870532B2 (ja) * 2011-08-09 2016-03-01 セイコーエプソン株式会社 物理量検出素子、物理量検出装置および電子機器
KR101901324B1 (ko) * 2011-10-25 2018-09-27 삼성전자주식회사 네 개의 채널들을 가진 반도체 패키지

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59143342A (ja) * 1983-02-07 1984-08-16 Hitachi Ltd 論理変更可能な半導体装置
JP2006114976A (ja) * 2004-10-12 2006-04-27 Epson Toyocom Corp 圧電発振器
CN1905168A (zh) * 2005-07-27 2007-01-31 冲电气工业株式会社 半导体器件及其制造方法以及在其中所使用的粘接材料及其制造方法
CN101170090A (zh) * 2006-10-23 2008-04-30 三洋电机株式会社 半导体装置及其制造方法
CN102867836A (zh) * 2011-07-07 2013-01-09 索尼公司 固态图像传感装置和电子设备

Also Published As

Publication number Publication date
JP2014165238A (ja) 2014-09-08
JP6136349B2 (ja) 2017-05-31
CN104009725A (zh) 2014-08-27
US20140239422A1 (en) 2014-08-28

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