CN103987672A - 太阳能电池用玻璃基板 - Google Patents
太阳能电池用玻璃基板 Download PDFInfo
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- 239000011521 glass Substances 0.000 title claims abstract description 136
- 239000000758 substrate Substances 0.000 title claims abstract description 78
- 239000000203 mixture Substances 0.000 claims abstract description 60
- 239000010409 thin film Substances 0.000 claims description 19
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 9
- 229910052782 aluminium Inorganic materials 0.000 claims description 5
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 abstract description 3
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 abstract description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- KKCBUQHMOMHUOY-UHFFFAOYSA-N Na2O Inorganic materials [O-2].[Na+].[Na+] KKCBUQHMOMHUOY-UHFFFAOYSA-N 0.000 abstract 1
- 229910052681 coesite Inorganic materials 0.000 abstract 1
- 229910052593 corundum Inorganic materials 0.000 abstract 1
- 229910052906 cristobalite Inorganic materials 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- 235000012239 silicon dioxide Nutrition 0.000 abstract 1
- 229910052682 stishovite Inorganic materials 0.000 abstract 1
- 229910052905 tridymite Inorganic materials 0.000 abstract 1
- 229910001845 yogo sapphire Inorganic materials 0.000 abstract 1
- 239000010408 film Substances 0.000 description 34
- 238000000034 method Methods 0.000 description 25
- 238000006243 chemical reaction Methods 0.000 description 22
- 230000005693 optoelectronics Effects 0.000 description 22
- 238000004031 devitrification Methods 0.000 description 19
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 18
- 238000010438 heat treatment Methods 0.000 description 15
- XEEYBQQBJWHFJM-UHFFFAOYSA-N iron Substances [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 15
- 238000004519 manufacturing process Methods 0.000 description 15
- 238000002425 crystallisation Methods 0.000 description 14
- 230000008025 crystallization Effects 0.000 description 14
- 230000009466 transformation Effects 0.000 description 12
- 229910052697 platinum Inorganic materials 0.000 description 10
- 230000008018 melting Effects 0.000 description 9
- 238000002844 melting Methods 0.000 description 9
- 239000002994 raw material Substances 0.000 description 9
- 239000003513 alkali Substances 0.000 description 7
- 239000007791 liquid phase Substances 0.000 description 7
- 238000006124 Pilkington process Methods 0.000 description 6
- DVRDHUBQLOKMHZ-UHFFFAOYSA-N chalcopyrite Chemical compound [S-2].[S-2].[Fe+2].[Cu+2] DVRDHUBQLOKMHZ-UHFFFAOYSA-N 0.000 description 6
- 229910052951 chalcopyrite Inorganic materials 0.000 description 6
- 230000008602 contraction Effects 0.000 description 6
- 239000013078 crystal Substances 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- 230000008569 process Effects 0.000 description 5
- 229910004613 CdTe Inorganic materials 0.000 description 4
- 208000037656 Respiratory Sounds Diseases 0.000 description 4
- 238000000465 moulding Methods 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- 229910010413 TiO 2 Inorganic materials 0.000 description 3
- 238000010521 absorption reaction Methods 0.000 description 3
- 238000000137 annealing Methods 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 229910052733 gallium Inorganic materials 0.000 description 3
- 229910052738 indium Inorganic materials 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 238000005728 strengthening Methods 0.000 description 3
- 230000010748 Photoabsorption Effects 0.000 description 2
- 229910006404 SnO 2 Inorganic materials 0.000 description 2
- WNROFYMDJYEPJX-UHFFFAOYSA-K aluminium hydroxide Chemical compound [OH-].[OH-].[OH-].[Al+3] WNROFYMDJYEPJX-UHFFFAOYSA-K 0.000 description 2
- 229910021502 aluminium hydroxide Inorganic materials 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 238000004040 coloring Methods 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 238000005342 ion exchange Methods 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 150000003057 platinum Chemical class 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 229910052711 selenium Inorganic materials 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 238000005033 Fourier transform infrared spectroscopy Methods 0.000 description 1
- 241000237502 Ostreidae Species 0.000 description 1
- 206010070834 Sensitisation Diseases 0.000 description 1
- PMZURENOXWZQFD-UHFFFAOYSA-L Sodium Sulfate Chemical compound [Na+].[Na+].[O-]S([O-])(=O)=O PMZURENOXWZQFD-UHFFFAOYSA-L 0.000 description 1
- 229910000287 alkaline earth metal oxide Inorganic materials 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000005587 bubbling Effects 0.000 description 1
- 229910052793 cadmium Inorganic materials 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 238000009841 combustion method Methods 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 238000004090 dissolution Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000010433 feldspar Substances 0.000 description 1
- 230000004927 fusion Effects 0.000 description 1
- 238000007499 fusion processing Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- UQSXHKLRYXJYBZ-UHFFFAOYSA-N iron oxide Inorganic materials [Fe]=O UQSXHKLRYXJYBZ-UHFFFAOYSA-N 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- NDLPOXTZKUMGOV-UHFFFAOYSA-N oxo(oxoferriooxy)iron hydrate Chemical compound O.O=[Fe]O[Fe]=O NDLPOXTZKUMGOV-UHFFFAOYSA-N 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 235000020636 oyster Nutrition 0.000 description 1
- 229910001404 rare earth metal oxide Inorganic materials 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 230000008313 sensitization Effects 0.000 description 1
- 239000005361 soda-lime glass Substances 0.000 description 1
- 229910001415 sodium ion Inorganic materials 0.000 description 1
- HUAUNKAZQWMVFY-UHFFFAOYSA-M sodium;oxocalcium;hydroxide Chemical compound [OH-].[Na+].[Ca]=O HUAUNKAZQWMVFY-UHFFFAOYSA-M 0.000 description 1
- 238000007669 thermal treatment Methods 0.000 description 1
- 229910000314 transition metal oxide Inorganic materials 0.000 description 1
Classifications
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- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C3/00—Glass compositions
- C03C3/04—Glass compositions containing silica
- C03C3/076—Glass compositions containing silica with 40% to 90% silica, by weight
- C03C3/083—Glass compositions containing silica with 40% to 90% silica, by weight containing aluminium oxide or an iron compound
- C03C3/085—Glass compositions containing silica with 40% to 90% silica, by weight containing aluminium oxide or an iron compound containing an oxide of a divalent metal
- C03C3/087—Glass compositions containing silica with 40% to 90% silica, by weight containing aluminium oxide or an iron compound containing an oxide of a divalent metal containing calcium oxide, e.g. common sheet or container glass
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- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
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- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
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- H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
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- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K77/00—Constructional details of devices covered by this subclass and not covered by groups H10K10/80, H10K30/80, H10K50/80 or H10K59/80
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- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
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- H01G9/2013—Light-sensitive devices characterised by the electrolyte, e.g. comprising an organic electrolyte the electrolyte comprising ionic liquids, e.g. alkyl imidazolium iodide
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Abstract
本发明涉及太阳能电池用玻璃基板,其特征在于,作为玻璃组成,以质量%计含有SiO240%~70%、Al2O31%~20%、Na2O1%~20%,并且玻璃中的水分量低于25mmol/L。
Description
技术领域
本发明涉及太阳能电池用玻璃基板,特别涉及适用于CIGS系太阳能电池、CdTe系太阳能电池等薄膜太阳能电池的太阳能电池用玻璃基板。
背景技术
在黄铜矿型薄膜太阳能电池,例如CIGS系太阳能电池中,含有Cu、In、Ga、Se的黄铜矿型化合物半导体,Cu(In,Ga)Se2作为光电转换膜形成于玻璃基板上。并且,该光电转换膜通过多元蒸镀法、硒化法等形成。
为了利用多元蒸镀法、硒化法等由Cu、In、Ga、Se等形成光电转换膜,而需要500~600℃左右的热处理工序。
即便CdTe系太阳能电池中,含有Cd、Te的光电转换膜也形成于玻璃基板上。这种情况下,也需要500~600℃左右的热处理工序。
另外,染料敏化型太阳能电池的制造工序中,虽然存在在玻璃基板上形成透明导电膜、TiO2多孔体的工序,但为了在玻璃基板上形成高品质的透明导电膜等,而需要高温的热处理(例如,500℃以上)。
【现有技术文献】
【专利文献】
【专利文献1】日本特开平11-135819号公报
【专利文献2】日本特开2005-89286号公报
【专利文献3】日本专利第2987523号公报
发明内容
发明要解决的问题
一直以来,CIGS系太阳能电池、CdTe系太阳能电池等中使用钠钙玻璃作为玻璃基板。但钠钙玻璃在高温热处理工序中容易发生热变形、热收缩。为了解决这样的问题,目前正在研讨使用高应变点玻璃作为太阳能电池用玻璃基板(参照专利文献1)。
但是,如专利文献1所述的高应变点玻璃由于应变点不够高,光电转换膜等的成膜温度为超过600且650℃以下的情况下,容易发生热变形、热收缩,无法充分提高光电转换效率。另外,CIGS系太阳能电池、CdTe系太阳能电池中,若在高温下使光电转换膜成膜,则光电转换膜的结晶品质得到改善,光电转换效率得到提高。
另外,如专利文献2所述的玻璃基板具有超过600且650℃以下的应变点。但是,由于该玻璃基板的热膨胀系数过低,所以不能与薄膜太阳能电池的电极膜、光电转换膜、染料敏化型電池的TiO2多孔体、封接玻璃料的热膨胀系数匹配,容易产生膜体剥落等问题。
此外,如专利文献3所述的玻璃基板具有超过650℃的应变点。但由于该玻璃基板的碱性成分,特别是Na2O的含量少,所以很难向光电转换膜供给Na,不能形成高品质的光电转换膜,结果造成只要不通过其他途径形成碱供给膜,就不能提高光电转换效率。另一方面,如果增加碱成分,特别是Na2O的含量,则应变点就容易降低。另外,对于CIGS系太阳能电池,如果碱性成分,特别是Na2O从玻璃基板扩散,则黄铜矿结晶容易析出。
所以,本发明的技术课题在于,提供一种含有碱成分,特别是Na2O的同时,应变点足够高,且能够与周边构件的热膨胀系数相匹配的太阳能电池用玻璃基板。
本发明者等经过潜心研究的结果发现,通过控制各成分的含量,并且控制玻璃中的水分量,可以解决上述技术课题,并作为本发明提出。即,本发明的太阳能电池用玻璃基板,其特征在于,作为玻璃组成,以质量%计含有SiO240%~70%、Al2O31%~20%、Na2O1%~20%,并且玻璃中的水分量低于25mmol/L。
此处,“玻璃中的水分量”是指,从波长2700nm处的光吸收,利用以下方法计算出的值。
首先,使用通用的FT-IR装置,测定波长2500~6500nm处的光吸收,确定波长2700nm附近的吸收最大值Am[%]。接着,通过下式1求出吸收系数α[cm-1]。另外,下式1中,d[cm]为测定试样的厚度,Ti[%]为测定试样的内部透射率。
α=(1/d)×log10{1/(Ti/100)}[cm-1]…(1)
此处,内部透射率Ti为利用下式2,由吸收最大值Am、折射率nd算出的值。
Ti=Am/{(1-R)}…(2)
其中,R=[1-{(nd-1)/(nd+1)}2]2
接下来,通过下式3计算含水量c[mol/L]。
c=α/e…(3)
另外,e可以通过“Glastechnischen Berichten”、第36卷、第9号、第350页读取。本申请中的e采用110[Lmol-1cm-1]。
本发明的太阳能电池用玻璃基板含有Na2O1~20质量%。这样可以向光电转换膜供给Na,即使不通过其他途径形成碱供给膜,也可以提高光电转换效率。另外,熔融温度、成型温度降低的同时,容易与周边构件的热膨胀系数相匹配。
本发明的太阳能电池用玻璃基板,其玻璃中的水分量低于25mmol/L。这样可以提高应变点。结果是,可以增加碱成分,特别是Na2O的含量,可以以高水准兼顾高应变点与光电转换膜的品质。
第二,本发明的太阳能电池用玻璃基板,作为玻璃组成,以质量%计,优选含有SiO240%~70%、Al2O33%~20%、B2O30%~15%、Li2O0%~10%、Na2O1%~20%、K2O0%~15%、MgO+CaO+SrO+BaO5%~35%、ZrO20%~10%,并且玻璃中的水分量低于25mmol/L。此处,“MgO+CaO+SrO+BaO”是指MgO、CaO、SrO、和BaO的总量。
第三,本发明的太阳能电池用玻璃基板,优选应变点为560℃以上。这样,可以使光电转换膜容易在高温成膜,光电转换膜的结晶品质得到改善,同时玻璃基板不容易产生热变形、热收缩。结果可以使薄膜太阳能电池等的制造成本降低,并且充分提高光电转换效率。此处,“应变点”为基于ASTM C336-71测定的值。
第四,本发明的太阳能电池用玻璃基板,优选30~380℃下的热膨胀系数为70×10-7~100×10-7/℃。此处,“30~380℃下的热膨胀系数”为使用膨胀计测定的平均值。
第五,本发明的太阳能电池用玻璃基板,优选用于薄膜太阳能电池。
第六,本发明的太阳能电池用玻璃基板,优选用于染料敏化型太阳能电池。
具体实施方式
本发明实施方案中的太阳能电池用玻璃基板,其作为玻璃组成,以质量%计含有SiO240%~70%、Al2O31%~20%、Na2O1%~20%。以下说明限定上述各成分含量的理由。
SiO2是形成玻璃网络的成分。SiO2的含量为40%~70%,优选45%~60%,较优选47%~57%,更优选49%~52%。若SiO2的含量过高,则高温粘度不适当地升高,熔融性、成型性容易降低,并且热膨胀系数过度降低,不容易与薄膜太阳能电池等的电极膜、光电转换膜的热膨胀系数相匹配。另一方面,若SiO2的含量过低,则耐失透性容易降低。另外,热膨胀系数过度升高,玻璃基板的耐热冲击性容易降低,结果在制造薄膜太阳能电池等时的热处理工序中,玻璃基板容易发生裂纹。
Al2O3是提高应变点的成分,同时是提高耐气候性、化学耐久性的成分,还是提高玻璃基板表面硬度的成分。Al2O3的含量为1~20%,优选5~17%,较优选8~16%,更优选超过10.0~15%,特别优选超过11.0~14.5%,最优选11.5~14%。若Al2O3的含量过高,则高温粘度不适当地升高,熔融性、成型性容易降低。另一方面,若Al2O3的含量过低,应变点容易降低。另外,若玻璃基板的表面硬度高,则在CIGS系太阳能电池的图案形成过程中,除去光电转换膜的工序中,玻璃基板不容易破损。
Na2O是调整热膨胀系数的成分,还是降低高温粘度,提高熔融性、成型性的成分。另外,Na2O在制造CIGS系太阳能电池的过程中,是对于黄铜矿结晶的成长有效的成分,是用于提高光电转换效率的重要成分。Na2O的含量为1~20%,优选2~15%,较优选3.5~13%,更优选超过4.3且为10%以下。若Na2O的含量过高,则应变点容易降低,并且热膨胀系数变得过高,玻璃基板的耐热冲击性容易降低。结果在制造薄膜太阳能电池等时的热处理工序中,玻璃基板容易产生热收缩、热变形,容易发生裂纹。另一方面,若Na2O的含量过低,则很难得到上述效果。
除上述成分以外,还可以添加例如以下成分。
B2O3是通过降低玻璃的粘度来降低熔融温度、成型温度的成分,但也是降低应变点的成分,伴随着熔融时的成分挥发,消耗炉耐火物材料的成分。另外,还是增加玻璃中的水分量的成分。所以,B2O3的含量优选0%以上且低于15%、0%以上且低于5%、0%以上且低于1.5%、特别是0%以上且低于0.1%。
Li2O是调整热膨胀系数的成分,还是降低高温粘度,提高熔融性、成型性的成分。另外,Li2O与Na2O同样,在制造CIGS系太阳能电池的过程中,是对于黄铜矿结晶的成长有效的成分。但是,Li2O的原料成本高,并且是大幅降低应变点的成分。所以,Li2O的含量优选0%~10%、0%~2%、特别是0%以上且低于0.1%。
K2O是调整热膨胀系数的成分,还是降低高温粘度,提高熔融性、成型性的成分。另外,K2O与Na2O同样,在制造CIGS系太阳能电池的过程中,是对于黄铜矿结晶的成长有效的成分,是用于提高光电转换效率的重要成分。但是,若K2O的含量过高,则应变点容易降低,另外热膨胀系数变得过高,玻璃基板的耐热冲击性容易降低。结果在制造薄膜太阳能电池等时的热处理工序中,玻璃基板容易产生热收缩、热变形,容易发生裂纹。所以,K2O的含量优选0%~15%、0.1%~10%、特别是4%~8%。
MgO+CaO+SrO+BaO是降低高温粘度,提高熔融性、成型性的成分。但是,若MgO+CaO+SrO+BaO的含量过高,则耐失透性容易降低,不容易成型为玻璃基板。所以,MgO+CaO+SrO+BaO的含量优选5%~35%、10%~30%、15%~27%、18%~25%、特别是20%~23%。
MgO是降低高温粘度,提高熔融性、成型性的成分。另外,MgO在碱土氧化物中,是使玻璃基板难以破裂的效果较大的成分。但是,MgO是使失透结晶容易析出的成分。所以,MgO的含量优选0%~10%、0%以上且低于5%、0.01%~4%、0.03~3%、特别是0.5%~2.5%。
CaO是降低高温粘度,提高熔融性、成型性的成分。但是,若CaO的含量过高,则耐失透性容易降低,难以成型为玻璃基板。所以,CaO的含量优选0%~10%、0.1%~9%、超过2.9%且为8%以下、3.0%~7.5%、特别是4.2%~6%。
SrO是降低高温粘度,提高熔融性、成型性的成分。另外,SrO与ZrO2共存的情况下,是抑制ZrO2系失透结晶析出的成分。若SrO的含量过高,则长石族的失透结晶容易析出,原料成本增高。所以,SrO的含量优选0%~15%、0.1%~13%、特别是超过4.0%且为12%以下。
BaO是降低高温粘度,提高熔融性、成型性的成分。若BaO的含量过高,则钡长石族的失透结晶容易析出,原料成本增高。另外,密度增大,支撑构件的成本容易增高。另一方面,若BaO的含量过低,则高温粘度不适当地升高,熔融性、成型性有降低的倾向。所以,BaO的含量优选0%~15%、0.1%~12%、特别是超过2.0%且为10%以下。
ZrO2是不升高高温粘度,提高应变点的成分。但是,若ZrO2的含量过高,则密度容易升高,玻璃基板容易破损,另外ZrO2系的失透结晶容易析出,难以成型为玻璃基板。所以,ZrO2的含量优选0%~15%、0%~10%、0%~7%、0.1%~6.5%、特别是2%~6%。
虽然玻璃中的Fe以Fe2+或Fe3+的状态存在,但尤其是Fe2+在近红外区有较强的光吸收特性。因此,Fe2+在大容量的玻璃熔化窑中,容易吸收玻璃熔化窑内的辐射能,具有提高熔融效率的效果。另外,由于Fe3+在铁的价数变化时放出氧气,所以还具有清澄效果。另外,限制使用高纯度原料(Fe2O3的含量极少的原料),而使用含有少量Fe2O3的原料,可以使玻璃基板的制造成本低廉化。另一方面,若Fe2O3的含量过高,由于容易吸收太阳光,薄膜太阳能电池等的表面温度容易升高,结果可能降低光电转换效率。另外,窑的辐射能在能量源附近被吸收,不能到达窑的中央部,玻璃熔化窑的热分布容易产生不均。所以,Fe2O3的含量优选0~1%、特别是0.01~1%。Fe2O3的适宜下限范围为超过0.020%、超过0.050%、特别是超过0.080%。另外,本发明中的氧化铁与Fe的价数无关,换算成“Fe2O3”来表示。
TiO2在防止由紫外线造成的着色,并且提高耐气候性的成分。但是,若TiO2的过高,则玻璃容易失透,玻璃自身容易着色成茶褐色。所以,TiO2的含量优选0%~10%、特别是0%以上且低于0.1%。
P2O5是提高耐失透性的成分,特别是抑制ZrO2系失透结晶析出的成分,还是使玻璃基板难以破裂的成分。但是,若P2O5的含量过高,则玻璃容易分相成乳白色。所以,P2O5的含量优选0%~10%、0%~0.2%、特别是0%以上且低于0.1%。
ZnO是降低高温粘度的成分。若ZnO的含量过高,则耐失透性容易降低。所以,ZnO的含量优选0%~10%、特别是0%~5%。
SO3是降低玻璃中的水分量的成分,同时是作为澄清剂起作用的成分。SO3的含量优选0%~1%、0.001%~1%、特别是0.01%~0.5%。另外,若采用浮法(Float Method)使玻璃基板成型,则能够廉价地大量生产玻璃基板,但在这种情况下,优选使用芒硝作为澄清剂。
Cl是降低玻璃中的水分量的成分,同时是作为澄清剂起作用的成分。Cl的含量优选0%~1%、0.001%~1%、特别是0.01%~0.5%。
As2O3是作为澄清剂起作用的成分,但采用浮法使玻璃基板成型的情况下,是使玻璃着色的成分,还是给环境负荷造成困扰的成分。所以,As2O3的含量优选0%~1%、特别是0%以上且低于0.1%。
Sb2O3是作为澄清剂起作用的成分,但采用浮法使玻璃基板成型的情况下,是使玻璃着色的成分,还是给环境负荷造成困扰的成分。所以,Sb2O3的含量优选0%~1%、特别是0%以上且低于0.1%。
SnO2是作为澄清剂起作用的成分,但也是降低耐失透性的成分。所以,SnO2的含量优选0%~1%、特别是0%以上且低于0.1%。
除上述成分以外,为了提高溶解性、清澄性、成型性,可以各添加最多1%的F、CeO2。另外,为了提高化学耐久性,可以各添加最多3%的Nb2O5、HfO2、Ta2O5、Y2O3、La2O3。还有,为了调整色调,还可以添加总量最多为2%的上述以外的稀土类氧化物、过渡金属氧化物。
本实施方案中的太阳能电池用玻璃基板,其玻璃中的水分量低于25mmol/L,优选10~23mmol/L、15~21mmol/L、特别是18~20mmol/L。这样即使添加大量对于改善光电转换效率有効的碱成分,特别是Na2O,也能维持高应变点。
若玻璃中的水分量过多,则应变点不适当地降低。另一方面,若玻璃中的水分量过少,则由于难以采用能够廉价且熔融大量的玻璃基板的燃烧法,因此玻璃基板的制造成本增高。
作为降低玻璃中水分量的方法,可以举出以下方法。(1)选择含水量低的原料。(2)添加减少玻璃中水分量的成分(Cl、SO3等)。(3)降低炉内气体中的水分量。(4)在熔融玻璃中进行N2鼓泡。(5)采用小型熔融炉。(6)加快熔融玻璃的流量。(7)采用电熔融法。
另外,作为Al2O3的导入原料,为了提高熔解性,一般使用氢氧化铝。为此,现有的太阳能电池用玻璃基板的玻璃组成中,含有的Al2O3占5%以上,特别是8%以上的情况下,原料批料中氢氧化铝的比例较高,结果玻璃中的水分量达到25mmol/L以上。
本实施方案中的太阳能电池用玻璃基板,其在30~380℃下的热膨胀系数优选70×10-7~100×10-7/℃,特别是80×10-7~90×10-7/℃。这样容易与薄膜太阳能电池的电极膜、光电转换膜的热膨胀系数相匹配。另外,若热膨胀系数过高,玻璃基板的耐热冲击性容易降低,结果在制造薄膜太阳能电池时的热处理工序中,玻璃基板容易发生裂纹。
本实施方案中的太阳能电池用玻璃基板,其密度优选2.90g/cm3以下,特别是2.85g/cm3以下。这样,由于玻璃基板的质量降低,所以容易使薄膜太阳能电池的支撑构件的成本低廉化。另外,“密度”可以采用公知的阿基米德法测定。
本实施方案中的太阳能电池用玻璃基板,其应变点优选560℃以上、超过600且为650℃以下、超过605且为640℃以下、特别是超过610且为630℃以下。这样,在制造薄膜太阳能电池时的热处理工序中,玻璃基板不容易产生热收缩、热变形。另外,应变点的上限没有特别设定,但如果应变点过高,则熔融温度、成型温度有可能不适当地升高。
本实施方案中的太阳能电池用玻璃基板,其在104.0dPa·s下的温度优选1200℃以下,特别是1180℃以下。这样,容易在低温使玻璃基板成型。另外,“104.0dPa·s下的温度”可以通过铂球提拉法测定。
本实施方案中的太阳能电池用玻璃基板,其在102.5dPa·s下的温度优选1520℃以下,特别是1460℃以下。这样容易在低温溶解玻璃原料。另外,“102.5dPa·s下的温度”可以通过铂球提拉法测定。
本实施方案中的太阳能电池用玻璃基板,其液相温度优选1160℃以下,特别是1100℃以下。若液相温度过高,则成型时玻璃容易失透,成型性容易降低。此处,“液相温度”是将通过标准筛30目(筛孔大小500μm)而残留在标准筛50目(筛孔大小300μm)上的玻璃粉末放入铂舟中,然后将该铂舟在温度梯度炉中保持24小时,测定结晶析出的最高温度而得出的值。
本实施方案中的太阳能电池用玻璃基板,其液相粘度优选104.0dPa·s以上,特别是104.3dPa·s以上。若液相粘度过低,则成型时玻璃容易失透,成型性容易降低。此处,“液相粘度”是指,通过铂球提拉法测定的液相温度下玻璃粘度值。
本实施方案中的太阳能电池用玻璃基板可如下制作:通过将按照上述玻璃组成范围、水分量调配的玻璃原料放入连续熔融炉中,加热熔融玻璃原料后,得到的玻璃融液经脱泡后供给成型装置,成型为板状并退火而制作。
玻璃基板的成型方法可以举例为,浮法、流孔下引法(slot down method)、溢流下拉法、重新下引法(redraw method)等。特别是大量生产廉价玻璃基板的情况下,优选采用浮法。
本实施方案中的太阳能电池用玻璃基板,优选不经过化学强化处理,特别是离子交换处理。如上所述,薄膜太阳能电池等存在高温的热处理工序。在高温热处理工序中,由于强化层(压缩应力层)消失,所以进行化学强化处理的实际利益变小。另外,根据与上述同样的理由,优选不经过风冷强化等物理强化处理。
尤其是CIGS系太阳能电池的情况下,若对玻璃基板进行离子交换处理,则玻璃表面的Na离子会减少,光电转换效率容易降低。在这种情况下,需要通过其他途径使碱供给膜成膜。
本实施方案中的太阳能电池用玻璃基板,优选由热膨胀系数为50×10-7~120×10-7/℃的光电转换膜成膜,且该光电转换膜的成膜温度为500~700℃。这样,光电转换膜的结晶品质得到改善,可以提高薄膜太阳能电池等的光电转换效率。另外,玻璃基板与光电转换膜的热膨胀系数容易匹配。
【实施例】
以下详细说明本发明的实施例。另外,以下的实施例仅为例示。本发明不被以下实施例有任何限制。
表1和表2表示本发明的实施例(试样No.1~16)和比较例(试样No.17)。
【表1】
【表2】
按照以下方法制作试样No.1~17。首先将按照表中的玻璃组成调制的批料放入铂坩埚或氧化铝坩埚后,通过电炉或煤气炉在1550℃熔融2小时。玻璃中的水分量按照原料种类和熔融炉的选定而进行调整。接着,将得到的熔融玻璃流出到碳板上,成型为平板状后进行退火。之后,根据各测定进行规定的加工。
对于得到的各试样,评价了其热膨胀系数α、密度d、玻璃中的水分量、应变点Ps、退火点Ta、软化点Ts、104dPa·s下的温度、103dPa·s下的温度、102.5dPa·s下的温度、102dPa·s下的温度、液相温度TL、液相粘度log10ηTL。其结果示于表1和表2。
热膨胀系数α为采用膨胀计测定的值,是30~380℃下的平均值。另外,作为测定试样使用了直径5.0mm、长20mm的圆柱形试样。
密度d为采用公知的阿基米德法测定的值。
玻璃中的水分量为上述单频带法(single band method)测定的值。
应变点Ps、退火点Ta为基于ASTM C336测定的值。
软化点Ts为基于ASTM C338测定的值。
104dPa·s下的温度、103dPa·s下的温度、102.5dPa·s下的温度为铂球提拉法测定的值。其中,104dPa·s下的温度相当于成型温度。
液相温度TL是将通过了标准筛30目(筛孔大小500μm)且残留在标准筛50目(筛孔大小300μm)上的玻璃粉末放入铂舟后,将该铂舟在温度梯度炉中保持24小时,测定结晶析出温度而得到的值。另外,液相温度TL越低,耐失透性越高,成型时玻璃中越不容易析出失透结晶,结果容易廉价制造大型玻璃基板。
液相粘度log10ηTL为通过铂球提拉法测定的液相温度TL下的玻璃粘度的值。液相粘度log10ηTL越高,耐失透性越高,成型时玻璃中越不容易析出失透结晶,结果容易廉价制造大型玻璃基板。
通过表1和表2可以明确得知,试样No.1~16中,由于玻璃中的水分量为24.9mmol/L以下,所以尽管含有4.0质量%以上的Na2O,应变点Ps也为575℃以上。另外,Na2O有助于CIGS系太阳能电池的光电转换效率的改善,为降低应变点Ps的效果较大的成分。试样No.1~16中,由于热膨胀系数α为81×10-7~86×10-7/℃,其与薄膜太阳能电池的电极膜、光电转换膜的热膨胀系数相匹配。另外,试样No.1~16在104dPa·s下的温度为1175℃以下,液相粘度log10ηTL为104.0dPa·s以上,因此生产性优良。
另一方面,试样No.17中,玻璃中的水分量为37.8mmol/L,因此应变点Ps为558℃。所以,试样No.17不适合用作薄膜太阳能电池用玻璃基板。
Claims (6)
1.一种太阳能电池用玻璃基板,其特征在于,作为玻璃组成,以质量%计含有SiO240%~70%、Al2O31%~20%、Na2O1%~20%,并且玻璃中的水分量低于25mmol/L。
2.根据权利要求1所述的太阳能电池用玻璃基板,其特征在于,作为玻璃组成,以质量%计含有SiO240%~70%、Al2O33%~20%、B2O30%~15%、Li2O0%~10%、Na2O1%~20%、K2O0%~15%、MgO+CaO+SrO+BaO5%~35%、ZrO20%~10%,并且玻璃中的水分量低于25mmol/L。
3.根据权利要求1或2所述的太阳能电池用玻璃基板,其特征在于,其应变点为560℃以上。
4.根据权利要求1或2所述的太阳能电池用玻璃基板,其特征在于,其在30℃~380℃下的热膨胀系数为70×10-7/℃~100×10-7/℃。
5.根据权利要求1或2所述的太阳能电池用玻璃基板,其特征在于,其用于薄膜太阳能电池。
6.根据权利要求1或2所述的太阳能电池用玻璃基板,其特征在于,其用于染料敏化型太阳能电池。
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CN105502927A (zh) * | 2015-12-25 | 2016-04-20 | 蚌埠玻璃工业设计研究院 | 一种薄膜太阳能电池用玻璃基板 |
CN112969670A (zh) * | 2018-11-12 | 2021-06-15 | 日本电气硝子株式会社 | Li2O-Al2O3-SiO2系结晶化玻璃 |
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TW201542485A (zh) * | 2014-05-15 | 2015-11-16 | Asahi Glass Co Ltd | 太陽電池用玻璃基板及使用其之太陽電池 |
JP5951152B1 (ja) * | 2014-09-19 | 2016-07-13 | 旭硝子株式会社 | ガラス基板及びcigs太陽電池 |
WO2017170320A1 (ja) * | 2016-03-28 | 2017-10-05 | パナソニックIpマネジメント株式会社 | 熱電変換素子および熱電変換モジュール |
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