CN103943548A - 分立式场氧结构的半导体器件的制造方法 - Google Patents

分立式场氧结构的半导体器件的制造方法 Download PDF

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CN103943548A
CN103943548A CN201310025246.XA CN201310025246A CN103943548A CN 103943548 A CN103943548 A CN 103943548A CN 201310025246 A CN201310025246 A CN 201310025246A CN 103943548 A CN103943548 A CN 103943548A
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drift region
silicon nitride
field oxide
oxide layer
semiconductor device
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许剑
何敏
章舒
罗泽煌
吴孝嘉
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CSMC Technologies Corp
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Wuxi CSMC Semiconductor Co Ltd
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Priority to US14/436,016 priority patent/US9252240B2/en
Priority to PCT/CN2013/091201 priority patent/WO2014114179A1/zh
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Abstract

本发明公开了一种分立式场氧结构的半导体器件的制造方法，包括：在晶圆表面生长缓冲氧化层；在缓冲氧化层上通过淀积形成氮化硅层；光刻定义出场区并蚀刻，去除场区上的氮化硅；对场区进行离子注入；生长场氧化层；剥除氮化硅层；对晶圆进行湿浸，去除缓冲氧化层和部分的场氧化层；重新在晶圆表面生长缓冲氧化层及在重新生长的缓冲氧化层上通过淀积形成氮化硅层；光刻定义出漂移区并蚀刻，去除所述漂移区上的氮化硅；对漂移区进行离子注入；生长漂移区氧化层。本发明在生长场氧化层完成后剥除氮化硅层，这时可以通过调整wet dip的量来优化场氧鸟嘴的长度，解决了场氧鸟嘴过长的问题。

Description

分立式场氧结构的半导体器件的制造方法
技术领域
本发明涉及半导体器件的组件间隔离区的制作，特别是涉及一种分立式场氧结构的半导体器件的制造方法。
背景技术
现代集成电路设计中高压横向扩散漂移区MOS管（LDMOS）器件得到广泛的应用，LDMOS的耐压是利用MOS管的漏端的漂移区，通过降低表面电场（RESURF）原理来实现。这种漂移区是借由离子注入，然后通过高温热过程扩散形成。漂移区结构通常包括一定厚度的热氧化层，通过多晶硅搭在热氧化层上，改变漂移区上表面的电势分布实现漂移区的完全耗尽，达到有限漂移区长度下最极限的耐压。
通常线宽为0.35μm以上的高压工艺采用局部场氧化（LOCOS）进行隔离，漂移区上氧化层使用叠场氧是一种LOCOS方法。通常先用光刻定义出场氧区域，生长第一步场氧。再用光刻定义出漂移区，用热氧化的方式生长漂移区氧化层，同时场氧区叠加生长而实现第二步生长。漂移区热氧化层与场氧厚度可以任意搭配，可以达到多晶场板对漂移区耗尽的较佳效果，但是场氧的鸟嘴长度得不到控制，影响有源区的面积，情况严重会导致漏电，使得良率降低。
发明内容
基于此，有必要针对传统的叠场氧方法鸟嘴区域过长的问题，提供一种能够优化场氧的鸟嘴长度的分立式场氧结构的半导体器件。
一种分立式场氧结构的半导体器件的制造方法，包括下列步骤：在晶圆表面生长缓冲氧化层；在所述缓冲氧化层上通过淀积形成氮化硅层；光刻定义出场区并蚀刻，去除所述场区上的氮化硅；对所述场区进行离子注入；进行场区氧化，生长场氧化层；剥除所述氮化硅层；对所述晶圆进行湿浸，去除所述缓冲氧化层和部分的所述场氧化层，以减小所述场氧化层的鸟嘴长度；重新在晶圆表面生长缓冲氧化层及在重新生长的缓冲氧化层上通过淀积形成氮化硅层，重新淀积的所述氮化硅层将所述场氧化层完全覆盖；光刻定义出漂移区并蚀刻，去除所述漂移区上的氮化硅；对所述漂移区进行离子注入；进行漂移区氧化，生长漂移区氧化层。
在其中一个实施例中，所述光刻定义出场区并蚀刻的步骤，是涂覆光刻胶并通过曝光和显影定义出场区，用等离子蚀刻去除场区上的氮化硅，然后做去胶清洗，所述去胶清洗在所述进行场区氧化的步骤前进行；所述光刻定义出漂移区并蚀刻的步骤，是涂覆光刻胶并通过曝光和显影定义出漂移区，用等离子蚀刻去除漂移区上的氮化硅，然后再次进行去胶清洗，所述再次去胶清洗在所述进行漂移区氧化的步骤前进行。
在其中一个实施例中，所述淀积形成氮化硅层和重新淀积形成氮化硅层的步骤，是采用低压炉管的方式进行。
在其中一个实施例中，所述进行漂移区氧化，生长漂移区氧化层的步骤后还包括剥除重新淀积的所述氮化硅层的步骤。
在其中一个实施例中，所述剥除氮化硅层的步骤是用磷酸溶液进行剥除。
在其中一个实施例中，所述缓冲氧化层和重新生长的缓冲氧化层的厚度均为150埃。
在其中一个实施例中，所述对晶圆进行湿浸，去除所述缓冲氧化层和部分的所述场氧化层的步骤中，去除的所述场氧化层的厚度为200埃。
在其中一个实施例中，所述进行场区氧化，生长场氧化层的步骤中生长的场氧化层的厚度为6000埃；所述进行漂移区氧化，生长漂移区氧化层的步骤中生长的漂移区氧化层的厚度为3000埃。
在其中一个实施例中，所述半导体器件是横向扩散金属氧化物半导体场效应管。
上述分立式场氧结构的半导体器件的制造方法，在生长场氧化层完成后剥除氮化硅层，这时可以通过调整湿浸（wet dip）的量来优化场氧鸟嘴的长度，解决了场氧鸟嘴过长的问题。
附图说明
图1为一实施例中分立式场氧结构的半导体器件的制造方法的流程图；
图2A至图2F是一实施例中采用分立式场氧结构的半导体器件的制造方法在制造过程中器件的剖面示意图。
具体实施方式
为使本发明的目的、特征和优点能够更为明显易懂，下面结合附图对本发明的具体实施方式做详细的说明。
图1是一实施例中分立式场氧结构的半导体器件的制造方法的流程图，包括下列步骤：
S110，在晶圆表面生长缓冲氧化层（PAD oxide layer）。
可以用热氧化工艺在硅衬底的表面生长缓冲氧化层。缓冲氧化层可以减缓硅与随后淀积的氮化硅层之间的应力。缓冲氧化层越厚，硅与氮化硅之间的应力越小，但对有源区形状和尺寸的影响也越大。在本实施例中，缓冲氧化层的厚度为在其它实施例中，本领域技术人员也可以根据器件的实际情况进行选择。
S120，在缓冲氧化层上通过淀积形成氮化硅层302。
图2A是一实施例中步骤S120完成后器件的剖面示意图，需要指出的是，所有附图中氮化硅层302下方的硅衬底均未画出，且缓冲氧化层因为较薄因此也未示出，本领域技术人员根据说明书和权利要求书的描述应可清楚地理解器件的结构。
在本实施例中，淀积形成氮化硅层302是采用低压炉管的方式进行。在其它实施例中，本领域技术人员也可以使用公知的其它淀积氮化硅的工艺来完成氮化硅层302的淀积。
S130，光刻定义出场区并蚀刻，去除场区上的氮化硅。
涂覆光刻胶并通过曝光和显影定义出场区，然后用等离子蚀刻去除场区上的氮化硅。在其它实施例中，也可以采用其它公知的适用于氮化硅蚀刻的干法或湿法蚀刻工艺去除氮化硅。
S140，对场区进行离子注入。
在光刻完成后，需要对光刻胶进行去胶清洗。清洗可以在离子注入之前做，也可以在离子注入完成后、步骤S150之前进行。图2B是图2A所示实施例中对场区进行离子注入的示意图。
S150，进行场区氧化，生长场氧化层304。
图2C是图2A所示实施例中步骤S150完成后器件的剖面示意图。场氧化层304可以采用热氧化工艺进行生长。
S160，剥除氮化硅层302。
在本实施例中，采用磷酸溶液去除氮化硅层302。在其它实施例中也可以采用本领域公知的去除氮化硅的方法进行剥除。图2D是图2A所示实施例中步骤S160完成后器件的剖面示意图。
S170，对晶圆进行湿浸（wet dip），去除缓冲氧化层和部分场氧化层304以减小场氧化层304的鸟嘴长度。
由于氮化硅层302被剥除，步骤S170中可以通过调整wet dip的量，实现对场氧鸟嘴的控制。在本实施例中，去除的场氧化层304的厚度为200埃。
S180，重新在晶圆表面生长缓冲氧化层，在重新生长的缓冲氧化层上通过淀积形成氮化硅层312。
生长缓冲氧化层可以用热氧化工艺进行，淀积氮化硅层312可以采用低压炉管的方式进行。氮化硅层312将场氧化层304完全覆盖。
S190，光刻定义出漂移区并蚀刻，去除漂移区上的氮化硅。
涂覆光刻胶并通过曝光和显影定义出漂移区，然后用等离子蚀刻去除漂移区上的氮化硅。
S200，对漂移区进行离子注入。
在漂移区光刻完成后，需要对光刻胶进行去胶清洗。清洗可以在漂移区离子注入之前做，也可以在离子注入完成后、步骤S210之前进行。图2E是图2A所示实施例中对漂移区进行离子注入的示意图。
S210，进行漂移区氧化，生长漂移区氧化层314。
图2F是图2A所示实施例中步骤S210完成后器件的剖面示意图。漂移区氧化层314可以采用热氧化工艺进行生长。由于氮化硅层312将场氧化层304完全覆盖，因此氮化硅层312对场氧化层304进行了保护，步骤S210中的热生长不会使得场氧化层304的厚度增加。
步骤S210完成后，可以用磷酸溶液将氮化硅层312剥除。
上述分立式场氧结构的半导体器件的制造方法，在生长场氧化层304完成后剥除氮化硅层302，这时可以通过调整湿浸（wet dip）的量来优化场氧鸟嘴的长度，解决了场氧鸟嘴过长的问题。湿浸完成后重新生长缓冲氧化层和氮化硅312，场氧化层304被氮化硅312覆盖保护。在后续生长漂移区氧化层314的步骤中，漂移区氧化层314的厚度可以自由调整，不会影响场氧化层304的厚度。
在一个实施例中，设计场氧化层304的厚度为漂移区氧化层314的厚度为可以于步骤S150中生长的场氧化层304，再于步骤S170中通过湿浸去除的场氧化层304，之后再于步骤S210中生长的漂移区氧化层314。
上述分立式场氧结构的半导体器件的制造方法，适用于横向扩散漂移区MOS管（LDMOS）器件，也可以用于制造其它采用局部场氧化（LOCOS）工艺进行隔离的半导体器件。
以上所述实施例仅表达了本发明的几种实施方式，其描述较为具体和详细，但并不能因此而理解为对本发明专利范围的限制。应当指出的是，对于本领域的普通技术人员来说，在不脱离本发明构思的前提下，还可以做出若干变形和改进，这些都属于本发明的保护范围。因此，本发明专利的保护范围应以所附权利要求为准。

Claims (9)

1.一种分立式场氧结构的半导体器件的制造方法，包括下列步骤：
在晶圆表面生长缓冲氧化层；
在所述缓冲氧化层上通过淀积形成氮化硅层；
光刻定义出场区并蚀刻，去除所述场区上的氮化硅；
对所述场区进行离子注入；
进行场区氧化，生长场氧化层；
剥除所述氮化硅层；
对所述晶圆进行湿浸，去除所述缓冲氧化层和部分的所述场氧化层，以减小所述场氧化层的鸟嘴长度；
重新在晶圆表面生长缓冲氧化层及在重新生长的缓冲氧化层上通过淀积形成氮化硅层，重新淀积的所述氮化硅层将所述场氧化层完全覆盖；
光刻定义出漂移区并蚀刻，去除所述漂移区上的氮化硅；
对所述漂移区进行离子注入；
进行漂移区氧化，生长漂移区氧化层。
2.根据权利要求1所述的分立式场氧结构的半导体器件的制造方法，其特征在于，所述光刻定义出场区并蚀刻的步骤，是涂覆光刻胶并通过曝光和显影定义出场区，用等离子蚀刻去除场区上的氮化硅，然后做去胶清洗，所述去胶清洗在所述进行场区氧化的步骤前进行；所述光刻定义出漂移区并蚀刻的步骤，是涂覆光刻胶并通过曝光和显影定义出漂移区，用等离子蚀刻去除漂移区上的氮化硅，然后再次进行去胶清洗，所述再次去胶清洗在所述进行漂移区氧化的步骤前进行。
3.根据权利要求1所述的分立式场氧结构的半导体器件的制造方法，其特征在于，所述淀积形成氮化硅层和重新淀积形成氮化硅层的步骤，是采用低压炉管的方式进行。
4.根据权利要求1所述的分立式场氧结构的半导体器件的制造方法，其特征在于，所述进行漂移区氧化，生长漂移区氧化层的步骤后还包括剥除重新淀积的所述氮化硅层的步骤。
5.根据权利要求1所述的分立式场氧结构的半导体器件的制造方法，其特征在于，所述剥除氮化硅层的步骤是用磷酸溶液进行剥除。
6.根据权利要求1所述的分立式场氧结构的半导体器件的制造方法，其特征在于，所述缓冲氧化层和重新生长的缓冲氧化层的厚度均为150埃。
7.根据权利要求6述的分立式场氧结构的半导体器件的制造方法，其特征在于，所述对晶圆进行湿浸，去除所述缓冲氧化层和部分的所述场氧化层的步骤中，去除的所述场氧化层的厚度为200埃。
8.根据权利要求7述的分立式场氧结构的半导体器件的制造方法，其特征在于，所述进行场区氧化，生长场氧化层的步骤中生长的场氧化层的厚度为6000埃；所述进行漂移区氧化，生长漂移区氧化层的步骤中生长的漂移区氧化层的厚度为3000埃。
9.根据权利要求1-8中任意一项所述的分立式场氧结构的半导体器件的制造方法，其特征在于，所述半导体器件是横向扩散金属氧化物半导体场效应管。
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