CN103765584B - 固态图像传感器 - Google Patents

固态图像传感器 Download PDF

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Publication number
CN103765584B
CN103765584B CN201280041304.1A CN201280041304A CN103765584B CN 103765584 B CN103765584 B CN 103765584B CN 201280041304 A CN201280041304 A CN 201280041304A CN 103765584 B CN103765584 B CN 103765584B
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China
Prior art keywords
face
dielectric film
semiconductor layer
reflective
image sensor
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Expired - Fee Related
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CN201280041304.1A
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English (en)
Chinese (zh)
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CN103765584A (zh
Inventor
加藤太朗
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Canon Inc
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Canon Inc
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/811—Interconnections
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/199—Back-illuminated image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings
    • H10F39/8053—Colour filters
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/806—Optical elements or arrangements associated with the image sensors
    • H10F39/8067—Reflectors

Landscapes

  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
CN201280041304.1A 2011-09-01 2012-08-21 固态图像传感器 Expired - Fee Related CN103765584B (zh)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP2011191074 2011-09-01
JP2011-191074 2011-09-01
JP2012-178923 2012-08-10
JP2012178923A JP5956866B2 (ja) 2011-09-01 2012-08-10 固体撮像装置
PCT/JP2012/071527 WO2013031708A1 (en) 2011-09-01 2012-08-21 Solid-state image sensor

Publications (2)

Publication Number Publication Date
CN103765584A CN103765584A (zh) 2014-04-30
CN103765584B true CN103765584B (zh) 2016-08-17

Family

ID=47756198

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201280041304.1A Expired - Fee Related CN103765584B (zh) 2011-09-01 2012-08-21 固态图像传感器

Country Status (4)

Country Link
US (1) US20140035086A1 (enExample)
JP (1) JP5956866B2 (enExample)
CN (1) CN103765584B (enExample)
WO (1) WO2013031708A1 (enExample)

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JP5893302B2 (ja) 2011-09-01 2016-03-23 キヤノン株式会社 固体撮像装置
US9093345B2 (en) 2012-10-26 2015-07-28 Canon Kabushiki Kaisha Solid-state imaging apparatus and imaging system
JP6209890B2 (ja) * 2013-07-29 2017-10-11 ソニー株式会社 裏面照射型イメージセンサ、撮像装置、および電子機器
KR102380829B1 (ko) * 2014-04-23 2022-03-31 가부시키가이샤 한도오따이 에네루기 켄큐쇼 촬상 장치
JP2016058538A (ja) 2014-09-09 2016-04-21 キヤノン株式会社 固体撮像装置およびカメラ
JP6518071B2 (ja) 2015-01-26 2019-05-22 キヤノン株式会社 固体撮像装置およびカメラ
JP2017069553A (ja) 2015-09-30 2017-04-06 キヤノン株式会社 固体撮像装置、その製造方法及びカメラ
JP6600246B2 (ja) 2015-12-17 2019-10-30 キヤノン株式会社 撮像装置及びカメラ
JP6738200B2 (ja) 2016-05-26 2020-08-12 キヤノン株式会社 撮像装置
US10319765B2 (en) 2016-07-01 2019-06-11 Canon Kabushiki Kaisha Imaging device having an effective pixel region, an optical black region and a dummy region each with pixels including a photoelectric converter
CN109791267A (zh) * 2016-09-28 2019-05-21 夏普株式会社 光学设备及相机模块
WO2018079296A1 (ja) * 2016-10-27 2018-05-03 ソニーセミコンダクタソリューションズ株式会社 撮像素子及び電子機器
JP6650898B2 (ja) * 2017-02-28 2020-02-19 キヤノン株式会社 光電変換装置、電子機器および輸送機器
EP3605609A1 (en) * 2017-03-28 2020-02-05 Nikon Corporation Imaging element and imaging device
JP2019041352A (ja) 2017-08-29 2019-03-14 キヤノン株式会社 撮像装置及び撮像システム
CN107680980A (zh) * 2017-09-29 2018-02-09 德淮半导体有限公司 图像传感器
CN109755262A (zh) * 2017-11-01 2019-05-14 中芯长电半导体（江阴）有限公司 一种封装结构及封装方法
CN107833900A (zh) * 2017-11-07 2018-03-23 德淮半导体有限公司 背照式互补金属氧化物半导体图像传感器及其制造方法
US11557619B2 (en) * 2017-12-26 2023-01-17 Sony Semiconductor Solutions Corporation Image sensor and imaging device
CN108258000A (zh) * 2018-01-24 2018-07-06 德淮半导体有限公司 一种图像传感器及其形成方法
JP6693537B2 (ja) * 2018-04-20 2020-05-13 ソニー株式会社 撮像素子および撮像装置
TWI734294B (zh) * 2019-12-11 2021-07-21 香港商京鷹科技股份有限公司 影像感測器
JPWO2021176839A1 (enExample) * 2020-03-06 2021-09-10
TWI834406B (zh) * 2022-12-01 2024-03-01 友達光電股份有限公司 元件基板及其製造方法

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US5416344A (en) * 1992-07-29 1995-05-16 Nikon Corporation Solid state imaging device and method for producing the same
JP2006261372A (ja) * 2005-03-17 2006-09-28 Sony Corp 固体撮像素子および固体撮像素子の製造方法および画像撮影装置
CN101098415A (zh) * 2006-06-30 2008-01-02 松下电器产业株式会社 固体摄像元件以及固体摄像装置
US20080258188A1 (en) * 2007-04-23 2008-10-23 United Microelectronics Corp. Metal oxide semiconductor device and method of fabricating the same
US20090045477A1 (en) * 2005-11-11 2009-02-19 Tadashi Narui Solid-State Imager Having Anti-Reflection Film, Display, and Its Manufacturing Method
US20110090384A1 (en) * 2009-10-21 2011-04-21 Canon Kabushiki Kaisha Solid-state imaging device

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US20070001100A1 (en) * 2005-06-30 2007-01-04 Taiwan Semiconductor Manufacturing Company, Ltd. Light reflection for backside illuminated sensor
US7659595B2 (en) * 2007-07-16 2010-02-09 Taiwan Semiconductor Manufacturing Company, Ltd. Embedded bonding pad for backside illuminated image sensor
TWI413243B (zh) * 2007-12-26 2013-10-21 Unisantis Elect Singapore Pte 固體攝像元件、固體攝像裝置及其製造方法
KR101545638B1 (ko) * 2008-12-17 2015-08-19 삼성전자 주식회사 이미지 센서 및 그 제조 방법, 이미지 센서를 포함하는 장치 및 그 제조 방법
US8299554B2 (en) * 2009-08-31 2012-10-30 International Business Machines Corporation Image sensor, method and design structure including non-planar reflector
KR101738532B1 (ko) * 2010-05-25 2017-05-22 삼성전자 주식회사 상부 고농도 ｐ 영역을 포함하는 후면 조사형 이미지 센서 및 그 제조 방법
JP2012018951A (ja) * 2010-07-06 2012-01-26 Sony Corp 固体撮像素子及びその製造方法、並びに固体撮像装置及び撮像装置
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US5416344A (en) * 1992-07-29 1995-05-16 Nikon Corporation Solid state imaging device and method for producing the same
JP2006261372A (ja) * 2005-03-17 2006-09-28 Sony Corp 固体撮像素子および固体撮像素子の製造方法および画像撮影装置
US20090045477A1 (en) * 2005-11-11 2009-02-19 Tadashi Narui Solid-State Imager Having Anti-Reflection Film, Display, and Its Manufacturing Method
CN101098415A (zh) * 2006-06-30 2008-01-02 松下电器产业株式会社 固体摄像元件以及固体摄像装置
US20080258188A1 (en) * 2007-04-23 2008-10-23 United Microelectronics Corp. Metal oxide semiconductor device and method of fabricating the same
US20110090384A1 (en) * 2009-10-21 2011-04-21 Canon Kabushiki Kaisha Solid-state imaging device

Also Published As

Publication number Publication date
US20140035086A1 (en) 2014-02-06
CN103765584A (zh) 2014-04-30
WO2013031708A1 (en) 2013-03-07
JP2013065831A (ja) 2013-04-11
JP5956866B2 (ja) 2016-07-27

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