CN103730372B - 一种可提高器件耐压的超结制造方法 - Google Patents
一种可提高器件耐压的超结制造方法 Download PDFInfo
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- CN103730372B CN103730372B CN201310734857.1A CN201310734857A CN103730372B CN 103730372 B CN103730372 B CN 103730372B CN 201310734857 A CN201310734857 A CN 201310734857A CN 103730372 B CN103730372 B CN 103730372B
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- 238000000034 method Methods 0.000 title claims abstract description 38
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 20
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 45
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 45
- 239000010703 silicon Substances 0.000 claims abstract description 45
- 238000005530 etching Methods 0.000 claims abstract description 15
- 230000003139 buffering effect Effects 0.000 claims abstract description 12
- 239000002131 composite material Substances 0.000 claims abstract description 12
- 238000000407 epitaxy Methods 0.000 claims abstract description 8
- 238000001259 photo etching Methods 0.000 claims description 16
- 239000004065 semiconductor Substances 0.000 description 23
- 238000010586 diagram Methods 0.000 description 13
- 239000012535 impurity Substances 0.000 description 11
- 230000003071 parasitic effect Effects 0.000 description 8
- 239000000463 material Substances 0.000 description 7
- 238000005468 ion implantation Methods 0.000 description 6
- 239000000758 substrate Substances 0.000 description 5
- 230000001939 inductive effect Effects 0.000 description 4
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 4
- 230000003647 oxidation Effects 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- 229920005591 polysilicon Polymers 0.000 description 3
- 239000004020 conductor Substances 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000003860 storage Methods 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
- H01L29/0611—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices
- H01L29/0615—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE]
- H01L29/063—Reduced surface field [RESURF] pn-junction structures
- H01L29/0634—Multiple reduced surface field (multi-RESURF) structures, e.g. double RESURF, charge compensation, cool, superjunction (SJ), 3D-RESURF, composite buffer (CB) structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66568—Lateral single gate silicon transistors
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Composite Materials (AREA)
- Thyristors (AREA)
Abstract
Description
Claims (1)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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CN201310734857.1A CN103730372B (zh) | 2013-12-27 | 2013-12-27 | 一种可提高器件耐压的超结制造方法 |
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CN201310734857.1A CN103730372B (zh) | 2013-12-27 | 2013-12-27 | 一种可提高器件耐压的超结制造方法 |
Publications (2)
Publication Number | Publication Date |
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CN103730372A CN103730372A (zh) | 2014-04-16 |
CN103730372B true CN103730372B (zh) | 2016-06-08 |
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CN201310734857.1A Active CN103730372B (zh) | 2013-12-27 | 2013-12-27 | 一种可提高器件耐压的超结制造方法 |
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Families Citing this family (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN106158922A (zh) * | 2015-04-13 | 2016-11-23 | 北大方正集团有限公司 | 一种超结半导体器件的外延片及其制作方法 |
CN106158929B (zh) * | 2015-04-13 | 2019-12-24 | 北大方正集团有限公司 | 一种超结半导体器件的外延片及其制作方法 |
CN106328687B (zh) * | 2015-07-02 | 2020-03-06 | 北大方正集团有限公司 | 一种用于超结器件的外延片的制作方法和结构 |
US10580868B2 (en) * | 2018-03-27 | 2020-03-03 | Alpha And Omega Semiconductor (Cayman) Ltd. | Super-junction corner and termination structure with improved breakdown and robustness |
CN108878534B (zh) * | 2018-06-29 | 2020-11-24 | 上海华虹宏力半导体制造有限公司 | 超结结构及其制造方法 |
CN111200010B (zh) * | 2018-11-20 | 2023-09-29 | 深圳尚阳通科技股份有限公司 | 超结器件及其制造方法 |
CN110212018B (zh) * | 2019-05-20 | 2022-08-16 | 上海华虹宏力半导体制造有限公司 | 超结结构及超结器件 |
CN110137081B (zh) * | 2019-05-20 | 2021-11-09 | 上海华虹宏力半导体制造有限公司 | 硅沟槽的制造方法和超结结构的制造方法 |
CN112786677B (zh) * | 2019-11-01 | 2024-04-02 | 南通尚阳通集成电路有限公司 | 超结器件及其制造方法 |
CN112864219A (zh) * | 2019-11-12 | 2021-05-28 | 南通尚阳通集成电路有限公司 | 超结器件及其制造方法 |
CN112864246B (zh) * | 2019-11-12 | 2024-04-02 | 南通尚阳通集成电路有限公司 | 超结器件及其制造方法 |
CN113394097B (zh) * | 2020-03-11 | 2022-09-09 | 上海新微技术研发中心有限公司 | 半导体器件结构的制备方法 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6475864B1 (en) * | 1999-10-21 | 2002-11-05 | Fuji Electric Co., Ltd. | Method of manufacturing a super-junction semiconductor device with an conductivity type layer |
CN1866538A (zh) * | 2005-05-17 | 2006-11-22 | 株式会社上睦可 | 半导体衬底及其制造方法 |
CN101465370A (zh) * | 2007-12-17 | 2009-06-24 | 株式会社电装 | 具有超级结的半导体器件 |
CN102157377A (zh) * | 2010-02-11 | 2011-08-17 | 上海华虹Nec电子有限公司 | 超结vdmos器件及其制造方法 |
CN102479805A (zh) * | 2010-11-30 | 2012-05-30 | 比亚迪股份有限公司 | 一种超级结半导体元件及其制造方法 |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20120273916A1 (en) * | 2011-04-27 | 2012-11-01 | Yedinak Joseph A | Superjunction Structures for Power Devices and Methods of Manufacture |
JP5915076B2 (ja) * | 2011-10-21 | 2016-05-11 | 富士電機株式会社 | 超接合半導体装置 |
-
2013
- 2013-12-27 CN CN201310734857.1A patent/CN103730372B/zh active Active
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6475864B1 (en) * | 1999-10-21 | 2002-11-05 | Fuji Electric Co., Ltd. | Method of manufacturing a super-junction semiconductor device with an conductivity type layer |
CN1866538A (zh) * | 2005-05-17 | 2006-11-22 | 株式会社上睦可 | 半导体衬底及其制造方法 |
CN101465370A (zh) * | 2007-12-17 | 2009-06-24 | 株式会社电装 | 具有超级结的半导体器件 |
CN102157377A (zh) * | 2010-02-11 | 2011-08-17 | 上海华虹Nec电子有限公司 | 超结vdmos器件及其制造方法 |
CN102479805A (zh) * | 2010-11-30 | 2012-05-30 | 比亚迪股份有限公司 | 一种超级结半导体元件及其制造方法 |
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CN103730372A (zh) | 2014-04-16 |
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Address after: 710021 export processing zone, No. twelve, 1 road, Fengcheng, Shaanxi, Xi'an Patentee after: Longteng Semiconductor Co.,Ltd. Address before: 710021 export processing zone, No. twelve, 1 road, Fengcheng, Shaanxi, Xi'an Patentee before: LONTEN SEMICONDUCTOR Co.,Ltd. Address after: 710021 export processing zone, No. twelve, 1 road, Fengcheng, Shaanxi, Xi'an Patentee after: LONTEN SEMICONDUCTOR Co.,Ltd. Address before: 710021 export processing zone, No. twelve, 1 road, Fengcheng, Shaanxi, Xi'an Patentee before: XI'AN LONTEN RENEWABLE ENERGY TECHNOLOGY Inc. |
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