CN103646869A - 晶圆的清洗方法 - Google Patents
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Abstract
本发明公开了一种晶圆的清洗方法,其包括在晶圆的正面涂布一层光刻胶;向晶圆正面的光刻胶注入离子掺杂,以硬化该光刻胶;用浓氢氟酸溶剂刻蚀晶圆背面的层次;去除晶圆正面的光刻胶。本发明通过对晶圆正面涂布光刻胶并注入离子掺杂,以对晶圆正面予以保护,随后对晶圆的背面进行湿法刻蚀,以去除背面的氮化硅和氧化硅,从而将网格状色差彻底消除。
Description
技术领域
本发明涉及半导体制造领域,尤其涉及一种晶圆的清洗方法。
背景技术
在半导体制造的刻蚀工艺中,晶圆放置于刻蚀腔内,并与刻蚀设备的晶圆承载台直接接触。由于承载台表面为网格状结构,在刻蚀过程中,刻蚀腔内的大量氧等离子体能够从晶圆承载台的孔隙处渗入到晶圆背面,将晶圆背面的局部区域氧化。
在晶圆背面的清洗过程中,一般采用HNO3和HF混合溶剂清洗晶圆背面的污染物,主要清洗对象是化学制剂残留及金属污染物。然而,由于清洗溶剂的刻蚀速率选择性,晶圆背面被氧化的部位不能够被清洗液腐蚀,只能腐蚀其它部位,从而在晶圆背面形成了大量的网格状台阶形貌,造成晶圆背面的色差。例如,正照式(Front Side Illumination,简称FSI)晶圆流通到后续工艺中时,由于晶圆背面的网格状色差,有可能导致后续背照式(Back Side Illumination,简称BSI)晶圆的工艺不能进行。
发明内容
为了解决上述现有技术存在的问题,本发明提供了一种晶圆的清洗方法,以消除晶圆背面的色差。
本发明提供一种晶圆的清洗方法,其包括以下步骤:
步骤S01,在晶圆的正面涂布一层光刻胶;
步骤S02,向晶圆正面的光刻胶注入离子掺杂,以硬化该光刻胶;
步骤S03,用浓氢氟酸溶剂刻蚀晶圆背面的层次;
步骤S04,去除晶圆正面的光刻胶。
进一步地,步骤S01中涂布的光刻胶厚度为200-2000nm。
进一步地,注入离子掺杂的浓度范围为1014-1016个/cm2,步骤S02所使用的设备是高电流离子注入设备。
进一步地,步骤S03中浓氢氟酸的浓度为25-49%。
进一步地,步骤S03中刻蚀的晶圆背面层次包括最外层的氮化硅层以及次外层的氧化硅层。
本发明提出了一种晶圆的清洗方法,通过对晶圆正面涂布光刻胶并注入离子掺杂,以对晶圆正面予以保护,随后对晶圆的背面进行湿法刻蚀,以去除背面的氮化硅和氧化硅,从而将网格状色差彻底消除。
附图说明
为能更清楚理解本发明的目的、特点和优点,以下将结合附图对本发明的较佳实施例进行详细描述,其中:
图1a至图1e是本发明清洗方法第一实施例各步骤的晶圆结构示意图。
具体实施方式
第一实施例
请同时参阅图1a至图1e,本实施例的晶圆清洗方法,其包括以下步骤。
步骤S01,提供一待清洗晶圆,晶圆从正面至背面依次具有器件金属层1、衬底2、第一二氧化硅层3、多晶硅层4、第二二氧化硅层5以及氮化硅层6,其中,氮化硅层6是晶圆背面最外层,第二二氧化硅层5是晶圆背面次外层,如图1a所示,氮化硅层6在前续工艺中产生了网格状台阶形貌,形成了色差。本步骤包括在晶圆的正面,即器件金属层1上涂布一层光刻胶7,如图1b所示。
其中,本步骤中光刻胶7的厚度为1000nm。在其他实施例中,光刻胶的厚度可选范围是200nm-2000nm,如果涂布的光刻胶较薄,大剂量的离子注入可能会穿透光刻胶,从而对晶圆正面造成损伤。
步骤S02,向晶圆正面涂布的光刻胶7注入离子掺杂,以硬化光刻胶7,使其不会在后续湿法刻蚀过程中脱落,以保护晶圆正面,如图1c所示。
其中,本步骤中注入离子掺杂工艺是通过高电流离子注入设备。注入的离子浓度优选1015个/cm2。注入的离子可以是现有常用的离子类型。
步骤S03,用49%浓氢氟酸溶剂(49%的HF和51%的水)采用湿法刻蚀工艺,刻蚀晶圆背面的层次,如图1d所示。
其中,本步骤中,湿法刻蚀的晶圆背面的层次包括氮化硅层6和第二二氧化硅层5。通过本步骤,去除了晶圆背面的网格状台阶形貌,消除了色差。
步骤S04,去除保护晶圆正面的光刻胶7,如图1e所示。
其中,本步骤中,可采用常用的干法灰化结合湿法剥离工艺。
通过以上清洗方法,可以在不损伤晶圆正面的情况下,消除晶圆背面的色差,以保证晶圆质量,并使后续工艺得以正常进行。
Claims (5)
1.一种晶圆的清洗方法,其特征在于,其包括以下步骤:
步骤S01,在晶圆的正面涂布一层光刻胶;
步骤S02,向晶圆正面的光刻胶注入离子掺杂,以硬化该光刻胶;
步骤S03,用浓氢氟酸溶剂刻蚀晶圆背面的层次;
步骤S04,去除晶圆正面的光刻胶。
2.根据权利要求1所述的晶圆的清洗方法,其特征在于:步骤S01中涂布的光刻胶的厚度为200nm-2000nm。
3.根据权利要求1所述的晶圆的清洗方法,其特征在于:步骤S02中注入离子掺杂的浓度为1014-1016个/cm2,步骤S02所使用的设备是高电流离子注入设备。
4.根据权利要求1所述的晶圆的清洗方法,其特征在于:步骤S03中浓氢氟酸的浓度为25-49%。
5.根据权利要求1所述的晶圆的清洗方法,其特征在于:步骤S03中刻蚀的晶圆背面层次包括最外层的氮化硅层以及次外层的氧化硅层。
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Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN107799393A (zh) * | 2017-09-26 | 2018-03-13 | 合肥新汇成微电子有限公司 | 一种半导体晶圆的清洗方法 |
CN107946215A (zh) * | 2017-11-23 | 2018-04-20 | 长江存储科技有限责任公司 | 晶圆翘曲状态调整方法 |
CN113964066A (zh) * | 2021-11-25 | 2022-01-21 | 滁州钰顺企业管理咨询合伙企业(有限合伙) | 一种晶圆表面清洗的方法 |
CN117790366A (zh) * | 2023-12-26 | 2024-03-29 | 苏州恩腾半导体科技有限公司 | 一种从晶圆表面移除氮化硅的装置及方法 |
CN118505700A (zh) * | 2024-07-18 | 2024-08-16 | 江苏中科智芯集成科技有限公司 | 一种晶圆aoi检测方法及系统 |
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Publication number | Priority date | Publication date | Assignee | Title |
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CN107799393A (zh) * | 2017-09-26 | 2018-03-13 | 合肥新汇成微电子有限公司 | 一种半导体晶圆的清洗方法 |
CN107946215A (zh) * | 2017-11-23 | 2018-04-20 | 长江存储科技有限责任公司 | 晶圆翘曲状态调整方法 |
CN113964066A (zh) * | 2021-11-25 | 2022-01-21 | 滁州钰顺企业管理咨询合伙企业(有限合伙) | 一种晶圆表面清洗的方法 |
CN117790366A (zh) * | 2023-12-26 | 2024-03-29 | 苏州恩腾半导体科技有限公司 | 一种从晶圆表面移除氮化硅的装置及方法 |
CN118505700A (zh) * | 2024-07-18 | 2024-08-16 | 江苏中科智芯集成科技有限公司 | 一种晶圆aoi检测方法及系统 |
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