CN107799393A - 一种半导体晶圆的清洗方法 - Google Patents
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Abstract
本发明公开了一种半导体晶圆的清洗方法,包括以下步骤:提供半导体晶圆,半导体晶圆的正面涂布一层光刻胶;向半导体晶圆正面的光刻胶注入离子掺杂,以硬化该光刻胶;用浓氢氟酸溶剂刻蚀半导体晶圆背面的层次;去除半导体晶圆正面的光刻胶;旋转半导体晶圆并使兆声波发生器从半导体晶圆边缘向半导体晶圆中心运动并过半导体晶圆中心点,在兆声波发生器的运动过程中,改变兆声波发生器在半导体晶圆表面停留的时间;再向半导体晶圆的边缘表面喷涂去离子水和稀氢氟酸对所述半导体晶圆外表面进行清洗;对上述清洗的半导体晶圆进行吹干处理,吹干处理采用的气体为氮气,所述吹干处理采用的温度范围为45℃~65℃,所述吹干处理采用的时间范围为80s~160s。
Description
技术领域
本发明涉及半导体晶圆技术领域,具体涉及一种半导体晶圆的清洗方法。
背景技术
在晶圆背面的清洗过程中,一般采用HNO3和HF混合溶剂清洗晶圆背面的污染物,主要清洗对象是化学制剂残留及金属污染物。然而,由于清洗溶剂的刻蚀速率选择性,晶圆背面被氧化的部位不能够被清洗液腐蚀,只能腐蚀其它部位,从而在晶圆背面形成了大量的网格状台阶形貌,造成晶圆背面的色差。例如,正照式晶圆流通到后续工艺中时,由于晶圆背面的网格状色差,有可能导致后续背照式晶圆的工艺不能进行。
发明内容
本发明旨在提供了一种半导体晶圆的清洗方法。
本发明提供如下技术方案:
一种半导体晶圆的清洗方法,其特征在于,包括以下步骤:
(1)提供半导体晶圆,半导体晶圆的正面涂布一层光刻胶;向半导体晶圆正面的光刻胶注入离子掺杂,以硬化该光刻胶;用浓氢氟酸溶剂刻蚀半导体晶圆背面的层次;去除半导体晶圆正面的光刻胶;
(2)旋转半导体晶圆并使兆声波发生器从半导体晶圆边缘向半导体晶圆中心运动并过半导体晶圆中心点,在兆声波发生器的运动过程中,改变兆声波发生器在半导体晶圆表面停留的时间;
(3)再向半导体晶圆的边缘表面喷涂去离子水和稀氢氟酸对所述半导体晶圆外表面进行清洗;
(4)对上述清洗的半导体晶圆进行吹干处理,吹干处理采用的气体为氮气,所述吹干处理采用的温度范围为45℃~65℃,所述吹干处理采用的时间范围为80s~160s。
所述步骤(1)中涂布的光刻胶的厚度为200nm-2000nm。
所述步骤(3)中稀氢氟酸中氟化氢与水的体积比浓度为0.1%~5.0%,所述稀氢氟酸的清洗时间为5s~25s。
所述步骤(3)中去离子水的温度范围为18℃~25℃,去离子水的流速范围是5毫升/秒~12毫升/秒。
所述步骤(2)中兆声波发生器在晶圆表面停留的时间t与半导体晶圆的半径R之间的关系为:t=k+m*R2,其中,k为常数,m为系数。
所述步骤(3)中向所述半导体晶圆的边缘表面喷涂去离子水和稀氢氟酸时,所述半导体晶圆均速旋转。
与现有技术相比,本发明的有益效果是:本发明通过改变兆声波发生器在晶圆表面停留的时间,使晶圆的中心点所受到的兆声波能量与晶圆的其他位置所受到的兆声波能量一致,避免了晶圆的中心点处的结构层在清洗过程中受到损伤或者在晶圆的中心产生凹坑;通过对晶圆正面涂布光刻胶并注入离子掺杂,以对晶圆正面予以保护,随后对晶圆的背面进行湿法刻蚀,以去除背面的氮化硅和氧化硅,从而将网格状色差彻底消除;通过去离子水本身的热量均能够提高稀氢氟酸对晶圆边缘表面的刻蚀的效率,从而能够快速的去除晶圆边缘表面的铜层,可以有效的防止稀氢氟酸溅射至晶圆的中心有铜区形成缺陷。
具体实施方式
下面将结合本发明实施例,对本发明实施例中的技术方案进行清楚、完整地描述,显然,所描述的实施例仅仅是本发明一部分实施例,而不是全部的实施例。基于本发明中的实施例,本领域普通技术人员在没有做出创造性劳动前提下所获得的所有其他实施例,都属于本发明保护的范围。
实施例一种半导体晶圆的清洗方法,其特征在于,包括以下步骤:
(1)提供半导体晶圆,半导体晶圆的正面涂布一层光刻胶;向半导体晶圆正面的光刻胶注入离子掺杂,以硬化该光刻胶;用浓氢氟酸溶剂刻蚀半导体晶圆背面的层次;去除半导体晶圆正面的光刻胶;
(2)旋转半导体晶圆并使兆声波发生器从半导体晶圆边缘向半导体晶圆中心运动并过半导体晶圆中心点,在兆声波发生器的运动过程中,改变兆声波发生器在半导体晶圆表面停留的时间;
(3)再向半导体晶圆的边缘表面喷涂去离子水和稀氢氟酸对所述半导体晶圆外表面进行清洗;
(4)对上述清洗的半导体晶圆进行吹干处理,吹干处理采用的气体为氮气,所述吹干处理采用的温度范围为45℃~65℃,所述吹干处理采用的时间范围为80s~160s。
所述步骤(1)中涂布的光刻胶的厚度为200nm-2000nm。
所述步骤(3)中稀氢氟酸中氟化氢与水的体积比浓度为0.1%~5.0%,所述稀氢氟酸的清洗时间为5s~25s。
所述步骤(3)中去离子水的温度范围为18℃~25℃,去离子水的流速范围是5毫升/秒~12毫升/秒。
所述步骤(2)中兆声波发生器在晶圆表面停留的时间t与半导体晶圆的半径R之间的关系为:t=k+m*R2,其中,k为常数,m为系数。
所述步骤(3)中向所述半导体晶圆的边缘表面喷涂去离子水和稀氢氟酸时,所述半导体晶圆均速旋转
对于本领域技术人员而言,显然本发明不限于所述示范性实施例的细节,而且在不背离本发明的精神或基本特征的情况下,能够以其他的具体形式实现本发明。因此,无论从哪一点来看,均应将实施例看作是示范性的,而且是非限制性的,本发明的范围由所附权利要求而不是所述说明限定,因此旨在将落在权利要求的等同要件的含义和范围内的所有变化囊括在本发明内。此外,应当理解,虽然本说明书按照实施方式加以描述,但并非每个实施方式仅包含一个独立的技术方案,说明书的这种叙述方式仅仅是为清楚起见,本领域技术人员应当将说明书作为一个整体,各实施例中的技术方案也可以经适当组合,形成本领域技术人员可以理解的其他实施方式。
Claims (6)
1.一种半导体晶圆的清洗方法,其特征在于,包括以下步骤:
(1)提供半导体晶圆,半导体晶圆的正面涂布一层光刻胶;向半导体晶圆正面的光刻胶注入离子掺杂,以硬化该光刻胶;用浓氢氟酸溶剂刻蚀半导体晶圆背面的层次;去除半导体晶圆正面的光刻胶;
(2)旋转半导体晶圆并使兆声波发生器从半导体晶圆边缘向半导体晶圆中心运动并过半导体晶圆中心点,在兆声波发生器的运动过程中,改变兆声波发生器在半导体晶圆表面停留的时间;
(3)再向半导体晶圆的边缘表面喷涂去离子水和稀氢氟酸对所述半导体晶圆外表面进行清洗;
(4)对上述清洗的半导体晶圆进行吹干处理,吹干处理采用的气体为氮气,所述吹干处理采用的温度范围为45℃~65℃,所述吹干处理采用的时间范围为80s~160s。
2.根据权利要求1所述的一种半导体晶圆的清洗方法,其特征在于:所述步骤(1)中涂布的光刻胶的厚度为200nm-2000nm。
3.根据权利要求1所述的一种半导体晶圆的清洗方法,其特征在于:所述步骤(3)中稀氢氟酸中氟化氢与水的体积比浓度为0.1%~5.0%,所述稀氢氟酸的清洗时间为5s~25s。
4.根据权利要求1所述的一种半导体晶圆的清洗方法,其特征在于:所述步骤(3)中去离子水的温度范围为18℃~25℃,去离子水的流速范围是5毫升/秒~12毫升/秒。
5.根据权利要求1所述的一种半导体晶圆的清洗方法,其特征在于:所述步骤(2)中兆声波发生器在晶圆表面停留的时间t与半导体晶圆的半径R之间的关系为:t=k+m*R2,其中,k为常数,m为系数。
6.根据权利要求1所述的一种半导体晶圆的清洗方法,其特征在于:所述步骤(3)中向所述半导体晶圆的边缘表面喷涂去离子水和稀氢氟酸时,所述半导体晶圆均速旋转。
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CN109671653B (zh) * | 2018-12-26 | 2020-10-20 | 江苏纳沛斯半导体有限公司 | 一种半导体晶圆清洗装置 |
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