CN103632779A - Power thick-film resistor - Google Patents
Power thick-film resistor Download PDFInfo
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- CN103632779A CN103632779A CN201310645117.0A CN201310645117A CN103632779A CN 103632779 A CN103632779 A CN 103632779A CN 201310645117 A CN201310645117 A CN 201310645117A CN 103632779 A CN103632779 A CN 103632779A
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Abstract
The invention discloses a power thick-film resistor which comprises a resistor substrate provided with a printed internal electrode and a resistor both on one surface as well as a printed back electrode on the other surface, wherein a heat-conducting plate is arranged on the surface of the back electrode of the resistor substrate in a matching manner, and is a porcelain substrate of which the inner surface and the outer surface are fixedly coated with an inner heat-conducting fin and an outer heat-conducting fin respectively; the surface of the inner heat-conducting fin is plated with a nickel layer; the nickel layer is oppositely welded and fixed with the back electrode on the resistor substrate in a matching manner. The porcelain substrate of which the inner surface and the outer surface are coated with the inner heat-conducting fin and the outer heat-conducting fin in a welding manner is welded on the surface of the back electrode of the resistor substrate to serve as the heat-conducting plate, and the heat-conducting fins on the two surfaces cancel out each other due to temperature distortion so as to enable the thermal expansion coefficient of the heat-conducting plate to be basically the same as that of the resistor substrate, so that the problem that the resistor substrate cracks due to the inconsistent thermal expansion coefficient during the use of the resistor substrate in a large size resistor is solved; the power thick-film resistor has the advantages that under the condition of the same size, the resistor is larger in power compared with a conventional resistor, the stable performance is realized, and the temperature distortion cannot be caused.
Description
Technical field
The present invention relates to electronic devices and components field, particularly a kind of power thick-film resistor.
Background technology
Power thick-film resistor mainly uses on some specific environments, particular device, in order to improve power, need to be arranged on radiator in use, heat resistance being produced by radiator distributes rapidly, therefore, the speed of resistor heat radiation has determined the size of resistor power.The heat of resistor is passed on radiator fast, reduce resistance temperature rise, can improve resistance and use power and life-span.Existing power thick-film resistor mainly contains following two kinds of structures:
1. traditional thick-film resistor is directly directly installed on porcelain substrate on radiator by heat-conducting silicone grease, because the conductive coefficient of porcelain substrate is 20w/mk, its horizontal heat-transfer rate is slower, and resistance substrate temperature can not pass on radiator quickly and evenly, easily causes substrate cracking when high-power use.
Improved thick-film resistor be on porcelain substrate soldering copper base plate as heating panel, then by heat-conducting silicone grease, be arranged on radiator, because of the conductive coefficient of copper high, be about 400w/mk, its horizontal heat-transfer rate is fast, substrate temperature can pass on radiator by copper soleplate quickly and evenly, and the temperature rise of resistance is declined, thereby has improved the power of resistance.But different because of the thermal coefficient of expansion of porcelain substrate and copper soleplate, when resistance size is larger, conducting strip is heated and understands outside stretcher strain, causes even cracking of porcelain curved substrate distortion, so on the resistor that this structure is only applicable to below power 200W, size is less.
Summary of the invention
The object of the present invention is to provide that a kind of volume is little, power is large and the power thick-film resistor of stable performance, solves existing power thick-film resistor heat radiation slow, volume is large, the problem of unstable properties.
The object of the invention is to be achieved by the following technical programs, power thick-film resistor, comprise electrode and resistance in one side printing, the resistance substrate of another side printing back electrode, it is characterized in that, the surface engagement of described resistance substrate back electrode arranges a heat-conducting plate, and described heat-conducting plate comprises a porcelain substrate, the inside and outside surface of porcelain substrate fixedly covers respectively interior conducting strip and outer conducting strip, and described interior conducting strip coordinates and is welded and fixed face-to-face with the surface of described resistance substrate back electrode.
Further, the surface of described interior conducting strip is coated with nickel dam, and this nickel dam coordinates and is welded and fixed face-to-face with the back electrode on resistance substrate.
Further, described interior conducting strip and outer conducting strip are copper sheet; Described resistance substrate is alumina plate or nitrogenize aluminium sheet, and described porcelain substrate is alumina plate or nitrogenize aluminium sheet.
Further, the surface of described resistance is also printed with glaze protective layer.
Beneficial effect: in innovative point of the present invention is to adopt, the porcelain substrate of the two-sided welding conducting strip of outer surface replaces existing individual layer copper soleplate as heat-conducting plate, be welded on the surface of resistance substrate back electrode, interior conducting strip surface is coated with nickel dam, laminating effect with raising with back electrode, because heat-conducting plate is the two-sided welding conducting strip at porcelain substrate, two-sided conducting strip temperature distortion meeting is cancelled each other, make the thermal coefficient of expansion of heat-conducting plate and the thermal coefficient of expansion of resistance substrate basically identical, overcome existing copper base plate and resistance substrate thermal coefficient of expansion is inconsistent, when being used, large scale causes the problem of resistance substrate cracking because thermal coefficient of expansion is inconsistent.It is larger that the present invention can accomplish resistor power under same volume, and stable performance, can temperature distortion, really realize small size, powerful thick-film resistor.
Accompanying drawing explanation
Fig. 1 is the STRUCTURE DECOMPOSITION schematic diagram of the embodiment of the present invention 1;
Fig. 2 is the STRUCTURE DECOMPOSITION schematic diagram of the embodiment of the present invention 2.
Embodiment
Embodiment 1
As shown in Figure 1, product adopts alumina plate or nitrogenize aluminium sheet as resistance substrate 6, adopt thick film silk-screen printing technique, electrode 5 and resistance 4 in the upper surface silk screen printing of resistance substrate 6, the surface printing of resistance 4 has glaze protective layer 3, the lower surface of resistance substrate 6 is printed back electrode 7, interior electrode 52 is drawn and is connected to external cabling post 1 by going between, the surface soldered of resistance substrate back electrode 7 is fixed a heat-conducting plate, heat-conducting plate comprises a porcelain substrate 10(alumina plate or nitrogenize aluminium sheet), in porcelain substrate 10, outer surface welds respectively interior conducting strip 9 and outer conducting strip 11, the surface of interior conducting strip 9 is coated with nickel dam 8, back electrode 7 and nickel dam 8 coordinate and are welded and fixed face-to-face, interior conducting strip 9 and outer conducting strip 11 are selected copper sheet, the surface of outer conducting strip 11 is coated with nickel dam 12 to prevent outer conducting strip 11 oxidations.When this resistor is arranged on and uses on radiator, the outer conducting strip of heat-conducting plate directly contacts with radiator, because heat-conducting plate adopts double-sided copper-clad, heat conduction is fast, thermal diffusivity is good, and the thermal coefficient of expansion of double-sided copper-clad heat-conducting plate and resistance substrate basically identical, the phenomenon of having stopped resistance substrate cracking occurs.
As shown in Figure 2, comprise the entire infrastructure of embodiment 1, in order further to improve heat conduction velocity, between the nickel dam 8 of resistance substrate back electrode 7 and heat-conducting plate, add one deck conducting strip 13, conducting strip 13 is selected copper sheet.
The above, be only preferred embodiment of the present invention, not the present invention done to any pro forma restriction; Any those of ordinary skill in the art, do not departing from technical solution of the present invention scope situation, all can utilize method and the technology contents of above-mentioned announcement to make many possible changes and modification to technical solution of the present invention, or be revised as the equivalent embodiment of equivalent variations.Therefore, every content that does not depart from technical solution of the present invention, according to technical spirit of the present invention to any simple modification made for any of the above embodiments, be equal to replacements, equivalence changes and modify, all still belong in the scope that technical solution of the present invention protects.
Claims (5)
1. power thick-film resistor, comprise electrode and resistance in one side printing, the resistance substrate of another side printing back electrode, it is characterized in that, the surface engagement of described resistance substrate back electrode arranges a heat-conducting plate, described heat-conducting plate comprises a porcelain substrate, and the inside and outside surface of porcelain substrate fixedly covers respectively interior conducting strip and outer conducting strip, and described interior conducting strip coordinates and is welded and fixed face-to-face with the surface of described resistance substrate back electrode.
2. power thick-film resistor according to claim 1, is characterized in that, the surface of described interior conducting strip is coated with nickel dam, and this nickel dam coordinates and is welded and fixed face-to-face with the back electrode on resistance substrate.
3. high-power thick-film resistor according to claim 1 and 2, is characterized in that, described interior conducting strip and outer conducting strip are copper sheet.
4. high-power thick-film resistor according to claim 1 and 2, is characterized in that, described resistance substrate is alumina plate or nitrogenize aluminium sheet, and described porcelain substrate is alumina plate or nitrogenize aluminium sheet.
5. high-power thick-film resistor according to claim 1 and 2, is characterized in that, the surface of described resistance is also printed with glaze protective layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310645117.0A CN103632779B (en) | 2013-12-05 | 2013-12-05 | Power thick-film resistor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310645117.0A CN103632779B (en) | 2013-12-05 | 2013-12-05 | Power thick-film resistor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN103632779A true CN103632779A (en) | 2014-03-12 |
| CN103632779B CN103632779B (en) | 2016-04-06 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201310645117.0A Active CN103632779B (en) | 2013-12-05 | 2013-12-05 | Power thick-film resistor |
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| CN (1) | CN103632779B (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110235211A (en) * | 2016-11-28 | 2019-09-13 | I.R.C.A.（共同）股份公司工业铠装及类似电阻 | Flexible conductive element and its manufacturing process |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4613844A (en) * | 1985-08-26 | 1986-09-23 | Rca Corporation | High power RF thick film resistor and method for the manufacture thereof |
| EP0855722A1 (en) * | 1997-01-10 | 1998-07-29 | Vishay SA | High energy and/or power dissipation resistor |
| CN201984915U (en) * | 2010-12-31 | 2011-09-21 | 深圳意杰（Ebg）电子有限公司 | Alloy-foil type planar-installation high-power resistor |
| CN202758689U (en) * | 2012-04-17 | 2013-02-27 | 深圳意杰（Ebg）电子有限公司 | Thick-film super-power planar resistor of composite base plate |
| CN203721405U (en) * | 2013-12-05 | 2014-07-16 | 蚌埠市德瑞特电阻技术有限公司 | Power thick film resistor |
-
2013
- 2013-12-05 CN CN201310645117.0A patent/CN103632779B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4613844A (en) * | 1985-08-26 | 1986-09-23 | Rca Corporation | High power RF thick film resistor and method for the manufacture thereof |
| EP0855722A1 (en) * | 1997-01-10 | 1998-07-29 | Vishay SA | High energy and/or power dissipation resistor |
| CN201984915U (en) * | 2010-12-31 | 2011-09-21 | 深圳意杰（Ebg）电子有限公司 | Alloy-foil type planar-installation high-power resistor |
| CN202758689U (en) * | 2012-04-17 | 2013-02-27 | 深圳意杰（Ebg）电子有限公司 | Thick-film super-power planar resistor of composite base plate |
| CN203721405U (en) * | 2013-12-05 | 2014-07-16 | 蚌埠市德瑞特电阻技术有限公司 | Power thick film resistor |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110235211A (en) * | 2016-11-28 | 2019-09-13 | I.R.C.A.（共同）股份公司工业铠装及类似电阻 | Flexible conductive element and its manufacturing process |
| CN110235211B (en) * | 2016-11-28 | 2021-08-27 | I.R.C.A.（共同）股份公司工业铠装及类似电阻 | Flexible conductive element and forming method thereof |
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| Publication number | Publication date |
|---|---|
| CN103632779B (en) | 2016-04-06 |
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Effective date of registration: 20170222 Address after: 233000 Bengbu high tech Zone, Anhui Hing Road, No. 818 Patentee after: BDS ELECTRONICS INC. Address before: 233000 Bengbu high tech Industrial Development Zone, Anhui, Xing Zhong Road, No. 818 Patentee before: DRT RESISTOR TECHNOLOGY CO., LTD. |