CN204289426U - A kind of frequency converter IGBT radiator structure - Google Patents
A kind of frequency converter IGBT radiator structure Download PDFInfo
- Publication number
- CN204289426U CN204289426U CN201420834538.8U CN201420834538U CN204289426U CN 204289426 U CN204289426 U CN 204289426U CN 201420834538 U CN201420834538 U CN 201420834538U CN 204289426 U CN204289426 U CN 204289426U
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- China
- Prior art keywords
- metal substrate
- igbt
- frequency converter
- single tube
- heat
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 229910052751 metal Inorganic materials 0.000 claims abstract description 57
- 239000002184 metal Substances 0.000 claims abstract description 57
- 239000000758 substrate Substances 0.000 claims abstract description 48
- 239000000463 material Substances 0.000 claims abstract description 25
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 24
- 229910052802 copper Inorganic materials 0.000 claims abstract description 20
- 239000010949 copper Substances 0.000 claims abstract description 20
- 230000004888 barrier function Effects 0.000 claims abstract description 8
- 239000004411 aluminium Substances 0.000 claims description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 5
- 229910052782 aluminium Inorganic materials 0.000 claims description 5
- 239000000853 adhesive Substances 0.000 claims description 4
- 230000001070 adhesive effect Effects 0.000 claims description 4
- 239000000919 ceramic Substances 0.000 claims description 4
- 101100257134 Caenorhabditis elegans sma-4 gene Proteins 0.000 claims description 2
- 238000009413 insulation Methods 0.000 abstract description 3
- -1 insulating barrier Substances 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 description 4
- 239000011889 copper foil Substances 0.000 description 3
- 239000006185 dispersion Substances 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 230000005540 biological transmission Effects 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000010292 electrical insulation Methods 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 230000008646 thermal stress Effects 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1305—Bipolar Junction Transistor [BJT]
- H01L2924/13055—Insulated gate bipolar transistor [IGBT]
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Abstract
The utility model discloses a kind of frequency converter IGBT radiator structure, it comprises IGBT single tube, metal substrate, radiator, pcb board, heat-conducting interface material, described IGBT single tube has pin and single tube fin, metal substrate is three-decker, is followed successively by layers of copper, insulating barrier, metal-based layer from top to bottom; IGBT pin plug-in mounting is welded on pcb board, and single tube fin is welded in metal substrate layers of copper, and metal substrate is fixing on a heat sink, has heat-conducting interface material between metal substrate and radiator.The utility model makes greatly improve the useful life of IGBT single tube, and insulation heat-conducting property makes well IGBT single-pipe temp lifting speed and temperature greatly reduce, thus improves the reliability of frequency converter work.
Description
Technical field
The utility model belongs to converter technology field, particularly a kind of frequency converter IGBT radiator structure.
Background technology
Heat is the biggest threat of silicon based semiconductor, and along with the develop rapidly of electronics industry, the volume size of electronic product is come less, and power density is increasing, and solving heat dissipation problem is to one of electronics industry design huge challenge.Frequency converter belongs to large power power electronic appliance, and a large amount of power semiconductor of inner outfit, can produce amount of heat in the course of work.And power semiconductor IGBT pipe belongs to temperature sensor, causing power semiconductor to burn because junction temperature is too high is one of modal reason in frequency converter failure.For ensureing the reliable and stable operation of frequency converter equipment, the design of cooling system is the key link.
Practical experience shows, the quality of cooling system design, and can directly have influence on frequency converter the work of safety and stability for a long time.Original frequency converter IGBT single tube is dispelled the heat by thick film ceramic circuit or insulating paper or FR4 wiring board and is insulated.Traditional glass is easy to crushing mechanism poor performance, and insulating paper is that heat conductivility is poor.Traditional FR4 wiring board is for being generally three-decker, two-layer is up and down layers of copper, centre is the poor FR4 layer of heat conductivility, copper layer thickness is thinner, be generally 1 ~ 3oz, FR4 layer is thicker, is generally more than 0.6mm, it is comparatively large that heat passes to wiring board lower surface thermal resistance by wiring board upper surface, has the larger temperature difference.
Utility model content
Technical problem to be solved in the utility model is, provides a kind of frequency converter IGBT radiator structure, solves the heat dispersion existed in existing IGBT radiator structure poor, hold breakable problem.
For solving the problems of the technologies described above, the frequency converter IGBT radiator structure that the utility model provides, it comprises IGBT single tube, metal substrate, radiator, pcb board, heat-conducting interface material layer, described IGBT single tube has pin and single tube fin, metal substrate is three-decker, is followed successively by metal substrate layers of copper, metal substrate insulating barrier, metal substrate metal-based layer from top to bottom; IGBT pin plug-in mounting is welded on pcb board, and single tube fin is welded in metal substrate layers of copper, and metal substrate is fixing on a heat sink, has heat-conducting interface material layer between metal substrate and radiator.
As preferably, described heat-conducting interface material is adhesive heat-conducting interface material, easy for installation.
As preferably, described pcb board is FR4 wiring board or ceramic circuit-board, has good reliability, low price.
As preferably, the metal-based layer material of described metal substrate is aluminium or copper, is convenient to processing.
As preferably, described metal substrate insulating barrier is FR4 base material or CEM3 base material, low price, good insulation preformance.
As preferably, described single tube heat radiation length of a film 4 ~ 10mm, wide 3 ~ 8mm.
As preferably, described metal substrate long 20 ~ 40mm, wide 15 ~ 30mm.
As preferably, the thickness of described metal substrate layers of copper is 1 ~ 3oz, can have reasonable heat dispersion, be convenient to processing.
As preferably, described radiator material is aluminium or copper, and heat dispersion is good, lighter.
After adopting above structure, the utility model frequency converter IGBT radiator structure compared with prior art, has the following advantages:
1) good thermal conductivity, electrical insulation properties and machining property, can reduce module operating temperature, increase the service life, and improves power density and reliability.Compared with traditional FR4 wiring board, thermal resistance can be down to minimum by metal substrate, makes substrate have fabulous heat-conductive characteristic; Compared with thick film ceramic circuit, the machinery produced when it can be resisted device welding and run and thermal stress;
2) greatly improve the useful life of IGBT single tube, insulation heat-conducting property makes well IGBT single-pipe temp lifting speed and temperature greatly reduce, thus improves the reliability of frequency converter work.
3) metal substrate circuit layer (employing electrolytic copper foil) is for realizing assembling and the connection of IGBT single tube, compared with traditional FR4 wiring board, adopt identical live width and identical thickness, but metal substrate can carry higher electric current.This is because the heat waste power consumption of the P=I2R that produces of copper foil circuit by metal substrate more fast diffusion go out.The thickness of Copper Foil can affect the capacity of heat transmission of metal substrate, increases copper thickness, can improve the capacity of heat transmission of metal substrate.
Accompanying drawing explanation
Fig. 1 is structural representation of the present utility model;
Fig. 2 is structural front view of the present utility model;
Fig. 3 is A-A place sectional view in Fig. 2;
Fig. 4 is B place enlarged drawing in Fig. 3;
Wherein: 1, IGBT single tube, 2, metal substrate, 3, radiator, 4, pcb board, 5, heat-conducting interface material layer, 11, IGBT fin, 12, IGBT pin, 21, metal substrate layers of copper, 22, metal substrate insulating barrier, 23, metal substrate metal level.
Embodiment
Below by embodiment, the utility model will be further described by reference to the accompanying drawings.
As Figure 1-3, the frequency converter IGBT radiator structure that the utility model provides, it comprises IGBT single tube 1, metal substrate 2, radiator 3, pcb board 4.IGBT single tube 1 has pin one 2 and single tube fin 11, and pin one 2 is welded on pcb board 4 as plug-in unit, provides electrical connection, and pcb board 4 is the FR4 wiring board of double-sided cloth copper.Single tube fin 11 adopts paster technique to be welded on metal substrate.As shown in Figure 4, metal substrate is three-decker, is followed successively by layers of copper 21, insulating barrier 22, metal-based layer 23 from top to bottom, and metal-based layer material is aluminium.The fin 11 of 6 IGBT single tubes adopts paster technique to be welded in the metal substrate layers of copper 21 of metal substrate 2.The metal-based layer 23 of metal substrate 2 adopts adhesive heat-conducting interface material to be bonded on radiator 3.The thickness of metal substrate layers of copper 21 is 2oz; The material of insulating barrier 22 is FR4, and thickness is 1oz; The thickness of metal-based layer 23 is 0.95 ~ 1.05mm.The long 47mm of radiator 3, wide 33mm, high 31mm, base plate thickness 2.5mm, fin thickness 1.6mm, spacing of fin 7mm.
Metal substrate 2 also can be screwed on radiator 3, and heat-conducting interface material can select not adhesive heat-conducting interface material.
Claims (9)
1. a frequency converter IGBT radiator structure, it comprises IGBT single tube (1), metal substrate (2), radiator (3), pcb board (4), heat-conducting interface material layer (5), described IGBT single tube (1) has IGBT pin (12) and single tube fin (11), described IGBT pin (12) plug-in mounting is welded on pcb board (4), it is characterized in that: described metal substrate (2) is three-decker, be followed successively by metal substrate layers of copper (21), metal substrate insulating barrier (22), metal substrate metal-based layer (23) from top to bottom; Single tube fin (11) is welded in metal substrate layers of copper (21), and metal substrate (2) is fixed on radiator (3), has heat-conducting interface material layer (5) between metal substrate (2) and radiator (3).
2. frequency converter IGBT radiator structure as claimed in claim 1, is characterized in that described heat-conducting interface material is adhesive heat-conducting interface material.
3. frequency converter IGBT radiator structure as claimed in claim 1 or 2, is characterized in that described pcb board (4) is for FR4 wiring board or ceramic circuit-board.
4. frequency converter IGBT radiator structure as claimed in claim 1 or 2, is characterized in that metal-based layer (23) material of described metal substrate (2) is copper or aluminium.
5. frequency converter IGBT radiator structure as claimed in claim 1 or 2, is characterized in that the material of described metal substrate insulating barrier (22) is FR4 base material or CEM3 base material.
6. frequency converter IGBT radiator structure as claimed in claim 1 or 2, is characterized in that described single tube fin (11) long 4 ~ 10mm, wide 3 ~ 8mm.
7. frequency converter IGBT radiator structure as claimed in claim 1 or 2, is characterized in that described metal substrate (2) long 20 ~ 40mm, wide 15 ~ 30mm.
8. frequency converter IGBT radiator structure as claimed in claim 1 or 2, is characterized in that the thickness of described metal substrate layers of copper (21) is 1 ~ 3oz.
9. frequency converter IGBT radiator structure as claimed in claim 1 or 2, is characterized in that described radiator (3) material is aluminium or copper.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201420834538.8U CN204289426U (en) | 2014-12-25 | 2014-12-25 | A kind of frequency converter IGBT radiator structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201420834538.8U CN204289426U (en) | 2014-12-25 | 2014-12-25 | A kind of frequency converter IGBT radiator structure |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN204289426U true CN204289426U (en) | 2015-04-22 |
Family
ID=52872560
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201420834538.8U Expired - Fee Related CN204289426U (en) | 2014-12-25 | 2014-12-25 | A kind of frequency converter IGBT radiator structure |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN204289426U (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112532148A (en) * | 2020-12-01 | 2021-03-19 | 深圳麦格米特电气股份有限公司 | Motor controller and electric automobile |
| WO2024114220A1 (en) * | 2022-11-30 | 2024-06-06 | 华为数字能源技术有限公司 | Metal substrate heat dissipation structure and photovoltaic power optimizer |
-
2014
- 2014-12-25 CN CN201420834538.8U patent/CN204289426U/en not_active Expired - Fee Related
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112532148A (en) * | 2020-12-01 | 2021-03-19 | 深圳麦格米特电气股份有限公司 | Motor controller and electric automobile |
| WO2024114220A1 (en) * | 2022-11-30 | 2024-06-06 | 华为数字能源技术有限公司 | Metal substrate heat dissipation structure and photovoltaic power optimizer |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GR01 | Patent grant | ||
| C56 | Change in the name or address of the patentee | ||
| CP01 | Change in the name or title of a patent holder |
Address after: Haiyan County, Jiaxing city of Zhejiang province in 314308 towns of Xincheng Village Patentee after: ZHEJIANG JAROL SCIENTIFIC INSTRUMENT CO., LTD. Address before: Haiyan County, Jiaxing city of Zhejiang province in 314308 towns of Xincheng Village Patentee before: Jiaxing Jarol Scientific Instrument Co., Ltd. |
|
| CP02 | Change in the address of a patent holder | ||
| CP02 | Change in the address of a patent holder |
Address after: 314308 No. 1070 Lane 88 Yanbei West Road, Wuyuan Street, Haiyan County, Jiaxing City, Zhejiang Province Patentee after: ZHEJIANG JAROL SCIENTIFIC INSTRUMENT CO., LTD. Address before: 314308 Guyu Village, Haiyan County, Jiaxing City, Zhejiang Province Patentee before: ZHEJIANG JAROL SCIENTIFIC INSTRUMENT CO., LTD. |
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| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20150422 Termination date: 20201225 |