CN103608898A - 藉由紫外线辅助的光化学沉积而对等离子体损坏的低介电常数薄膜的介电恢复 - Google Patents

藉由紫外线辅助的光化学沉积而对等离子体损坏的低介电常数薄膜的介电恢复 Download PDF

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CN103608898A
CN103608898A CN201280027958.9A CN201280027958A CN103608898A CN 103608898 A CN103608898 A CN 103608898A CN 201280027958 A CN201280027958 A CN 201280027958A CN 103608898 A CN103608898 A CN 103608898A
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dielectric film
containing carbon
film
matrix precursor
radiation
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K·S·伊姆
T·诺瓦克
B·谢
A·T·迪莫斯
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Abstract

本发明提供了用于修复损坏的低k膜的方法。低k膜的损坏发生在处理膜期间，诸如在蚀刻、灰化和平坦化期间。处理低k膜导致水储存在膜的孔隙中，并且处理低k膜进一步导致亲水性化合物在低k膜结构中形成。结合紫外线（UV）辐射与含碳化合物的修复工艺从孔隙移除水，并且所述修复工艺进一步从低k膜结构中移除亲水性化合物。

Description

藉由紫外线辅助的光化学沉积而对等离子体损坏的低介电常数薄膜的介电恢复
发明背景
技术领域
本发明的实施例大体而言关于用于修复和降低半导体制造中的低k膜的介电常数的方法。
现有技术
随着器件规模持续调整，半导体制造中的介电膜的介电常数（k）持续减小。对于能够持续减小特征尺寸而言，最小化对低介电常数（低k）膜的整合损坏是重要的。然而，随着特征尺寸缩小，在介电膜的电阻电容与可靠度上的改良变成一项严峻的挑战。
当前用于蚀刻或灰化介电膜的技术涉及生成水（H2O）作为副产物的工艺化学过程（process chemistries）。水副产物可能导入沉积的介电膜中，因而增加介电膜的k值。同样，当前用于移除氧化铜（CuO）与化学机械平坦化（CMP）残余物的技术涉及使用氨（NH3）等离子体或氢（H2）等离子体。为了改良金属化结构的电迁移(EM)以及ILD膜的时间相关介电击穿（time dependent dielectric breakdown(TDDB)），移除氧化铜以及CMP残余物是必要的。然而，将低k膜暴露至NH3与H2等离子体修正了膜结构并且增加了k值。现存的修复技术涉及液相硅烷化或使用超临界CO2。然而，这些技术尚未被证实对修复膜中的凹陷特征的侧壁损坏有效。
因此，需要一种用于修复介电膜以降低k值的方法，从而改良效率并且允许更小的器件尺寸。
发明内容
本发明的实施例大体而言涉及用于修复和降低半导体制造中的低k膜的介电常数的方法。
在一个实施例中，提供一种修复损坏的低k介电膜的方法。所述方法通常包含：将介电膜定位在处理腔室中；加热所述处理腔室；使含碳前驱物流入所述处理腔室；将所述含碳前驱物与所述介电膜暴露至紫外线（UV）辐射；分解所述含碳前驱物；以及将含碳化合物沉积至介电膜的孔隙中。
附图说明
藉由参考实施例，可获得以上简要概述的本发明的更特定说明，可详细地了解本发明的上述特征，所述实施例中的一些实施例在附图中图示。然而，应注意附图仅图示本发明的典型实施例，因而不应将所述附图视为限制本发明的范围，因为本发明可容许其它等效实施例。
图1A至图1F绘示在处理的各阶段期间的介电层。
图2A至图2B绘示在处理的各阶段期间具有薄碳膜的介电层。
具体实施方式
本发明的实施例大体而言涉及用于修复和降低半导体制造中的低k膜的介电常数（k值）的方法。
图1A绘示沉积在结构101上的介电膜100。所述结构101可以是基板（诸如举例而言硅晶圆）或者先前形成的层（诸如举例而言金属化或互连的层）。介电膜100可以是多孔含硅低k膜，诸如举例而言SiO2、Si+O+C、Si+O+N、Si+C+O+H、Si+O+C+N、或其它相关膜。介电膜100可具有形成在所述介电膜中的孔隙102。
图1B绘示在平坦化和蚀刻之后的介电膜100，所述平坦化和蚀刻用于使特征104形成在介电膜100中。介电膜100可通过例如化学机械平坦化（CMP）工艺平坦化。介电膜100可通过例如以下方式蚀刻：遮蔽介电膜100的一部分；使介电膜100未遮蔽部分接触由氢氟酸（HF）蒸汽所形成的等离子体；以及使用由氧（O2）气或CO2气体形成的等离子体将所述遮蔽灰化出来。
介电膜100的平坦化、灰化、以及蚀刻将氢和/或水导入介电膜100，从而使Si-OH基形成，所述Si-OH基例如使介电膜100亲水。介电膜100的亲水性质使孔隙102被水填充，从而生成损坏的孔隙103。Si-OH基与损坏的孔隙103二者皆增加了介电膜100的k值。来自平坦化和蚀刻的损坏通常局限在介电膜100的上部并且局限在特征104的侧壁，如图1B所示。
图1C绘示在通过以下描述的修复工艺修复之后的介电膜100。举例而言，所述修复工艺通过将水从损坏的孔隙103移除以因而生成被修复的孔隙105、并且通过将介电膜100中的SiOH基转换成疏水的Si-O-Si(CH3)3基来减小介电膜100的k值。所述疏水的Si-O-Si(CH3)3基有助于将水从介电膜100的损坏孔隙103汲引出来。
在一个实施例中，可通过紫外线（UV）辅助的化学气相沉积（CVD）工艺来修复介电膜100。UV-CVD工艺包含：在UV辐射存在的情况下使介电膜100接触含碳化合物，从而在介电膜100中生成前文所述的Si-O-Si(CH3)3基。
例如，UV-CVD工艺可通过以下方式实施：将介电膜100放入处理腔室中；加热所述处理腔室；使气相含碳前驱物流入所述处理腔室；接合UV辐射源以使所述含碳前驱物与所述介电膜100接触UV辐射；以UV辐射分解所述含碳前驱物；以及将含碳化合物沉积至介电膜100的损坏孔隙103中。在一个实施例中，同时供应UV辐射与含碳前驱物。在修复工艺期间，薄的含碳膜201可沉积至修复的介电膜100上，如图2A中所见。所述薄的含碳膜201可以高达
Figure BDA0000432155900000031
厚。如图1C所示，通过升华所述薄的含碳膜201或者通过使所述薄的含碳膜201扩散至介电膜100中，可视情况移除所述薄的含碳膜201。
适合的含碳前驱物包括但不限于，乙烯、乙炔、1,3-丁二烯、以及异戊二烯。其它适合的含碳前驱物包括含有碳-碳双键（C=C）和/或碳-碳三键（C≡C）的化合物。可调整所述UV辐射以含有特定波长，所述特定波长可被所用的特定含碳前驱物吸收，以在修复工艺期间有效分解所述含碳前驱物。例如，1,3-丁二烯对波长介于200nm至220nm的UV辐射具高度吸收性，而乙炔对波长介于120nm至180nm的UV辐射具高度吸收性。UV辐射可具有介于10nm至400nm之间（例如，介于20nm至230nm之间）的波长。也可将处理腔室加热至有益于分解含碳前驱物的温度。
使用气相前驱物的一个优点在于，所述气相前驱物的分子能够比液相前驱物更深地渗入膜中。同样，使用UV辐射是有益的，因为UV辐射有助于将介电膜100中的Si-OH基转换成疏水的Si-O-Si(CH3)3基。
可在以下条件下施行UV-CVD工艺：处理腔室压力介于1托至100托之间（诸如10托）、介电膜温度介于0℃至400℃之间（诸如200℃）、含碳前驱物流速介于10sccm至5000sccm之间（诸如500sccm）、以及处理时间介于5秒至300秒之间（诸如30秒）。
在介电膜100已修复之后，可执行后续工艺以继续制造半导体器件。例如，可将扩散阻挡层106沉积至介电膜100的特征104中，并且且可将金属材料107（诸如举例而言铜或铜合金）沉积至特征104中，如图1D所示。可能有必要平坦化金属材料107、并且从金属材料107移除在平坦化期间可能形成的任何氧化物。常见的金属氧化物移除技术涉及使用氢等离子体或氨等离子体。所述平坦化和/或金属氧化物移除工艺可能再度损坏介电膜100的表面，如图1E所见。可藉由使用前文所述的修复工艺来修复介电膜100。与含碳膜201类似，薄的含碳膜202可在修复工艺期间沉积至修复的介电膜100上，如图2B所见。所述薄的含碳膜202可高达
Figure BDA0000432155900000041
厚。如图1F所示，通过升华所述薄的含碳膜202或者通过使所述薄的含碳膜202扩散至介电膜100中，可视情况移除所述薄的含碳膜202。
所述的修复工艺有效地降低损坏的介电膜的k值，因而使半导体器件特征能够持续在规模上有所调整。
尽管前述内容涉及本发明的实施例，但是可不背离本发明的基本范围而设计其它以及进一步的实施例，并且本发明的范围由随附的权利要求书所决定。

Claims (10)

1.一种修复损坏的低k介电膜的方法，所述方法包含：
将介电膜定位在处理腔室中；
加热所述处理腔室；
使含碳前驱物流入所述处理腔室；
将所述含碳前驱物与所述介电膜暴露至紫外线（UV）辐射；
分解所述含碳前驱物；以及
将含碳化合物沉积至所述介电膜的孔隙中。
2.如权利要求1所述的方法，其中所述含碳前驱物包含1,3-丁二烯与异戊二烯中的至少一个。
3.如权利要求2所述的方法，其中所述UV辐射具有介于200nm至220nm之间的波长。
4.如权利要求1所述的方法，其中所述UV辐射具有介于20nm至230nm之间的波长。
5.如权利要求1所述的方法，其中所述分解所述含碳前驱物包含：用所述UV辐射分解所述含碳前驱物。
6.如权利要求1所述的方法，其中所述处理腔室处于介于1托至100托之间的压力下，所述介电膜处于介于0℃至400℃之间的温度下，所述含碳前驱物以介于10sccm至5000sccm之间的流速流入所述处理腔室，并且所述介电膜受到处理达介于5秒至300秒之间的处理时间。
7.如权利要求1所述的方法，进一步包含：将含碳膜沉积至所述介电膜上。
8.如权利要求7所述的方法，其中所述含碳膜被沉积至不超过
Figure FDA0000432155890000021
的厚度。
9.如权利要求7所述的方法，进一步包含：从所述介电膜移除所述含碳膜。
10.如权利要求9所述的方法，其中所述从所述介电膜移除所述含碳膜包含以下步骤中的至少一个：升华所述含碳膜；以及使所述含碳膜扩散进入所述介电膜。
CN201280027958.9A 2011-06-28 2012-05-14 藉由紫外线辅助的光化学沉积而对等离子体损坏的低介电常数薄膜的介电恢复 Pending CN103608898A (zh)

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