CN103594561A - 氧化物薄膜硫化硒化法制备铜锌锡硫硒太阳电池吸收层的方法 - Google Patents
氧化物薄膜硫化硒化法制备铜锌锡硫硒太阳电池吸收层的方法 Download PDFInfo
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- CN103594561A CN103594561A CN201310616508.XA CN201310616508A CN103594561A CN 103594561 A CN103594561 A CN 103594561A CN 201310616508 A CN201310616508 A CN 201310616508A CN 103594561 A CN103594561 A CN 103594561A
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- zinc
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- copper
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- 229910052711 selenium Inorganic materials 0.000 title claims abstract description 35
- 238000000034 method Methods 0.000 title claims abstract description 30
- 229910052717 sulfur Inorganic materials 0.000 title claims abstract description 22
- 239000010409 thin film Substances 0.000 title abstract description 9
- 238000004519 manufacturing process Methods 0.000 title abstract 2
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 claims abstract description 57
- DNIAPMSPPWPWGF-UHFFFAOYSA-N Propylene glycol Chemical compound CC(O)CO DNIAPMSPPWPWGF-UHFFFAOYSA-N 0.000 claims abstract description 57
- 239000011669 selenium Substances 0.000 claims abstract description 40
- 239000010949 copper Substances 0.000 claims abstract description 34
- 238000004528 spin coating Methods 0.000 claims abstract description 33
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims abstract description 30
- 239000002904 solvent Substances 0.000 claims abstract description 30
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 claims abstract description 24
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 claims abstract description 21
- 238000000137 annealing Methods 0.000 claims abstract description 19
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 claims abstract description 18
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical class [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims abstract description 18
- 229910052718 tin Inorganic materials 0.000 claims abstract description 18
- 239000000758 substrate Substances 0.000 claims abstract description 15
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 claims abstract description 14
- 229910021626 Tin(II) chloride Inorganic materials 0.000 claims abstract description 12
- 238000010438 heat treatment Methods 0.000 claims abstract description 12
- XBDQKXXYIPTUBI-UHFFFAOYSA-N dimethylselenoniopropionate Natural products CCC(O)=O XBDQKXXYIPTUBI-UHFFFAOYSA-N 0.000 claims abstract description 10
- 150000003751 zinc Chemical class 0.000 claims abstract description 9
- 239000011701 zinc Substances 0.000 claims abstract description 6
- 235000019260 propionic acid Nutrition 0.000 claims abstract description 5
- IUVKMZGDUIUOCP-BTNSXGMBSA-N quinbolone Chemical compound O([C@H]1CC[C@H]2[C@H]3[C@@H]([C@]4(C=CC(=O)C=C4CC3)C)CC[C@@]21C)C1=CCCC1 IUVKMZGDUIUOCP-BTNSXGMBSA-N 0.000 claims abstract description 5
- 229910052725 zinc Inorganic materials 0.000 claims abstract description 5
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 4
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims abstract description 4
- 229910052802 copper Inorganic materials 0.000 claims abstract description 4
- 239000011261 inert gas Substances 0.000 claims abstract description 4
- 238000002360 preparation method Methods 0.000 claims description 21
- JIAARYAFYJHUJI-UHFFFAOYSA-L zinc dichloride Chemical compound [Cl-].[Cl-].[Zn+2] JIAARYAFYJHUJI-UHFFFAOYSA-L 0.000 claims description 20
- ZOIORXHNWRGPMV-UHFFFAOYSA-N acetic acid;zinc Chemical group [Zn].CC(O)=O.CC(O)=O ZOIORXHNWRGPMV-UHFFFAOYSA-N 0.000 claims description 14
- 239000004246 zinc acetate Substances 0.000 claims description 14
- 235000014121 butter Nutrition 0.000 claims description 13
- OPQARKPSCNTWTJ-UHFFFAOYSA-L copper(ii) acetate Chemical compound [Cu+2].CC([O-])=O.CC([O-])=O OPQARKPSCNTWTJ-UHFFFAOYSA-L 0.000 claims description 13
- 238000003756 stirring Methods 0.000 claims description 13
- 239000005864 Sulphur Substances 0.000 claims description 12
- TXUICONDJPYNPY-UHFFFAOYSA-N (1,10,13-trimethyl-3-oxo-4,5,6,7,8,9,11,12,14,15,16,17-dodecahydrocyclopenta[a]phenanthren-17-yl) heptanoate Chemical compound C1CC2CC(=O)C=C(C)C2(C)C2C1C1CCC(OC(=O)CCCCCC)C1(C)CC2 TXUICONDJPYNPY-UHFFFAOYSA-N 0.000 claims description 11
- ORTQZVOHEJQUHG-UHFFFAOYSA-L copper(II) chloride Chemical compound Cl[Cu]Cl ORTQZVOHEJQUHG-UHFFFAOYSA-L 0.000 claims description 11
- 235000011150 stannous chloride Nutrition 0.000 claims description 11
- 239000001119 stannous chloride Substances 0.000 claims description 11
- 239000011592 zinc chloride Substances 0.000 claims description 10
- 235000005074 zinc chloride Nutrition 0.000 claims description 10
- 239000002243 precursor Substances 0.000 claims description 8
- 150000003839 salts Chemical class 0.000 claims description 8
- 239000012298 atmosphere Substances 0.000 claims description 7
- 238000005987 sulfurization reaction Methods 0.000 claims description 7
- RWSOTUBLDIXVET-UHFFFAOYSA-N Dihydrogen sulfide Chemical compound S RWSOTUBLDIXVET-UHFFFAOYSA-N 0.000 claims description 6
- 229910000037 hydrogen sulfide Inorganic materials 0.000 claims description 6
- 239000000126 substance Substances 0.000 claims description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 4
- 229910000058 selane Inorganic materials 0.000 claims description 4
- 238000005352 clarification Methods 0.000 claims description 3
- 229910052786 argon Inorganic materials 0.000 claims description 2
- 239000007789 gas Substances 0.000 claims description 2
- 239000012046 mixed solvent Substances 0.000 claims description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N nitrogen Substances N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 2
- 229910052757 nitrogen Inorganic materials 0.000 claims description 2
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 claims description 2
- 239000010408 film Substances 0.000 abstract description 54
- 239000012704 polymeric precursor Substances 0.000 abstract 3
- 150000001879 copper Chemical class 0.000 abstract 1
- 235000019441 ethanol Nutrition 0.000 abstract 1
- 239000011593 sulfur Substances 0.000 abstract 1
- 239000000463 material Substances 0.000 description 16
- 239000011135 tin Substances 0.000 description 16
- 239000000376 reactant Substances 0.000 description 12
- 239000003153 chemical reaction reagent Substances 0.000 description 11
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 9
- 229910052750 molybdenum Inorganic materials 0.000 description 9
- 239000011733 molybdenum Substances 0.000 description 9
- 239000012299 nitrogen atmosphere Substances 0.000 description 8
- 238000010521 absorption reaction Methods 0.000 description 6
- 229910052733 gallium Inorganic materials 0.000 description 6
- 229910052738 indium Inorganic materials 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 5
- 231100000252 nontoxic Toxicity 0.000 description 5
- 230000003000 nontoxic effect Effects 0.000 description 5
- 239000002184 metal Substances 0.000 description 4
- 230000001476 alcoholic effect Effects 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- BDERNNFJNOPAEC-UHFFFAOYSA-N propan-1-ol Chemical compound CCCO BDERNNFJNOPAEC-UHFFFAOYSA-N 0.000 description 2
- JPVYNHNXODAKFH-UHFFFAOYSA-N Cu2+ Chemical compound [Cu+2] JPVYNHNXODAKFH-UHFFFAOYSA-N 0.000 description 1
- 241001572351 Lycaena dorcas Species 0.000 description 1
- 241001572347 Lycaena hermes Species 0.000 description 1
- 241000530268 Lycaena heteronea Species 0.000 description 1
- 241000784732 Lycaena phlaeas Species 0.000 description 1
- 229910000928 Yellow copper Inorganic materials 0.000 description 1
- SEUJAMVVGAETFN-UHFFFAOYSA-N [Cu].[Zn].S=[Sn]=[Se] Chemical compound [Cu].[Zn].S=[Sn]=[Se] SEUJAMVVGAETFN-UHFFFAOYSA-N 0.000 description 1
- 239000006096 absorbing agent Substances 0.000 description 1
- 229910001431 copper ion Inorganic materials 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 230000013011 mating Effects 0.000 description 1
- 238000013082 photovoltaic technology Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 230000004083 survival effect Effects 0.000 description 1
- 239000002341 toxic gas Substances 0.000 description 1
- 231100000419 toxicity Toxicity 0.000 description 1
- 230000001988 toxicity Effects 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02568—Chalcogenide semiconducting materials not being oxides, e.g. ternary compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/032—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312
- H01L31/0326—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312 comprising AIBIICIVDVI kesterite compounds, e.g. Cu2ZnSnSe4, Cu2ZnSnS4
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Electromagnetism (AREA)
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Photovoltaic Devices (AREA)
Abstract
Description
Claims (9)
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CN201310616508.XA CN103594561B (zh) | 2013-11-27 | 2013-11-27 | 氧化物薄膜硫化硒化法制备铜锌锡硫硒太阳电池吸收层的方法 |
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CN201310616508.XA CN103594561B (zh) | 2013-11-27 | 2013-11-27 | 氧化物薄膜硫化硒化法制备铜锌锡硫硒太阳电池吸收层的方法 |
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CN103594561A true CN103594561A (zh) | 2014-02-19 |
CN103594561B CN103594561B (zh) | 2017-01-25 |
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Cited By (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104393096A (zh) * | 2014-09-29 | 2015-03-04 | 上海科慧太阳能技术有限公司 | 一种禁带宽度可控的铜锌锡硫硒薄膜材料的制备方法 |
CN104409568A (zh) * | 2014-11-13 | 2015-03-11 | 郑州大学 | 一种提高用于太阳能电池的铜锌锡硫薄膜质量的方法 |
CN105039926A (zh) * | 2015-06-15 | 2015-11-11 | 岭南师范学院 | 一种液态锡加热连续硫化硒化法制备CZTSSe薄膜的方法及其CZTSSe薄膜和应用 |
CN105185848A (zh) * | 2015-09-02 | 2015-12-23 | 苏州大学 | 一种基于水溶液的铜锌锡硫或/和硒薄膜的制备方法 |
CN105185847A (zh) * | 2015-08-24 | 2015-12-23 | 扬州大学 | 一种制备铜锌锡硫薄膜的方法 |
CN106057973A (zh) * | 2016-07-01 | 2016-10-26 | 福建师范大学 | 一种氧化物纳米颗粒制备太阳能电池吸收层cts薄膜的方法 |
CN106684210A (zh) * | 2016-12-28 | 2017-05-17 | 中国电子科技集团公司第十八研究所 | 一种用于太阳电池的铜锌锡硫硒薄膜制备方法、该方法制备的薄膜及包含该薄膜的太阳电池 |
CN113754310A (zh) * | 2021-08-31 | 2021-12-07 | 河南大学 | 一种新型银铅硅硫硒薄膜光伏吸收层材料及其制备方法 |
CN114447128A (zh) * | 2022-01-29 | 2022-05-06 | 江西理工大学 | 一种基于无硫源前驱体制备锌黄锡矿结构薄膜太阳能电池吸收层的方法 |
CN114643175A (zh) * | 2022-03-10 | 2022-06-21 | 广东工业大学 | 一种离子液体作为溶剂的铜锌锡硫吸收层的制备方法 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TW201131665A (en) * | 2009-10-27 | 2011-09-16 | Ibm | Aqueous-based method of forming semiconductor film and photovoltaic device including the film |
CN103204540A (zh) * | 2013-02-23 | 2013-07-17 | 北京工业大学 | 一种Cu2ZnSnS4太阳能电池吸收层薄膜的非肼基溶液制备方法 |
KR20130084824A (ko) * | 2012-01-18 | 2013-07-26 | 한국과학기술연구원 | 페이스트 또는 잉크를 이용한 구리아연주석황화계 또는 구리아연주석셀렌계 박막의 제조 방법 |
-
2013
- 2013-11-27 CN CN201310616508.XA patent/CN103594561B/zh active Active
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TW201131665A (en) * | 2009-10-27 | 2011-09-16 | Ibm | Aqueous-based method of forming semiconductor film and photovoltaic device including the film |
KR20130084824A (ko) * | 2012-01-18 | 2013-07-26 | 한국과학기술연구원 | 페이스트 또는 잉크를 이용한 구리아연주석황화계 또는 구리아연주석셀렌계 박막의 제조 방법 |
CN103204540A (zh) * | 2013-02-23 | 2013-07-17 | 北京工业大学 | 一种Cu2ZnSnS4太阳能电池吸收层薄膜的非肼基溶液制备方法 |
Cited By (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104393096A (zh) * | 2014-09-29 | 2015-03-04 | 上海科慧太阳能技术有限公司 | 一种禁带宽度可控的铜锌锡硫硒薄膜材料的制备方法 |
CN104409568A (zh) * | 2014-11-13 | 2015-03-11 | 郑州大学 | 一种提高用于太阳能电池的铜锌锡硫薄膜质量的方法 |
CN104409568B (zh) * | 2014-11-13 | 2016-08-24 | 郑州大学 | 一种提高用于太阳能电池的铜锌锡硫薄膜质量的方法 |
CN105039926A (zh) * | 2015-06-15 | 2015-11-11 | 岭南师范学院 | 一种液态锡加热连续硫化硒化法制备CZTSSe薄膜的方法及其CZTSSe薄膜和应用 |
CN105185847A (zh) * | 2015-08-24 | 2015-12-23 | 扬州大学 | 一种制备铜锌锡硫薄膜的方法 |
CN105185848B (zh) * | 2015-09-02 | 2017-05-03 | 苏州大学 | 一种基于水溶液的铜锌锡硫或/和硒薄膜的制备方法 |
CN105185848A (zh) * | 2015-09-02 | 2015-12-23 | 苏州大学 | 一种基于水溶液的铜锌锡硫或/和硒薄膜的制备方法 |
CN106057973A (zh) * | 2016-07-01 | 2016-10-26 | 福建师范大学 | 一种氧化物纳米颗粒制备太阳能电池吸收层cts薄膜的方法 |
CN106684210A (zh) * | 2016-12-28 | 2017-05-17 | 中国电子科技集团公司第十八研究所 | 一种用于太阳电池的铜锌锡硫硒薄膜制备方法、该方法制备的薄膜及包含该薄膜的太阳电池 |
CN106684210B (zh) * | 2016-12-28 | 2019-08-27 | 中国电子科技集团公司第十八研究所 | 一种用于太阳电池的铜锌锡硫硒薄膜制备方法、该方法制备的薄膜及包含该薄膜的太阳电池 |
CN113754310A (zh) * | 2021-08-31 | 2021-12-07 | 河南大学 | 一种新型银铅硅硫硒薄膜光伏吸收层材料及其制备方法 |
CN114447128A (zh) * | 2022-01-29 | 2022-05-06 | 江西理工大学 | 一种基于无硫源前驱体制备锌黄锡矿结构薄膜太阳能电池吸收层的方法 |
CN114447128B (zh) * | 2022-01-29 | 2024-04-23 | 江西理工大学 | 一种基于无硫源前驱体制备锌黄锡矿结构薄膜太阳能电池吸收层的方法 |
CN114643175A (zh) * | 2022-03-10 | 2022-06-21 | 广东工业大学 | 一种离子液体作为溶剂的铜锌锡硫吸收层的制备方法 |
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