CN103588166B - 高纵横比银纳米线的生产方法 - Google Patents

高纵横比银纳米线的生产方法 Download PDF

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Publication number
CN103588166B
CN103588166B CN201310463543.2A CN201310463543A CN103588166B CN 103588166 B CN103588166 B CN 103588166B CN 201310463543 A CN201310463543 A CN 201310463543A CN 103588166 B CN103588166 B CN 103588166B
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silver
shell
core
carrier
nanowires
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Expired - Fee Related
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Chinese (zh)
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CN103588166A (zh
Inventor
J·克拉拉克
G·卡纳里昂
卜路嘉
J·朱
P·特雷福纳斯
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DuPont Electronic Materials International LLC
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Rohm and Haas Electronic Materials LLC
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    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K7/00—Constructional details common to different types of electric apparatus
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F9/00—Making metallic powder or suspensions thereof
    • B22F9/16—Making metallic powder or suspensions thereof using chemical processes
    • B22F9/18—Making metallic powder or suspensions thereof using chemical processes with reduction of metal compounds
    • B22F9/24—Making metallic powder or suspensions thereof using chemical processes with reduction of metal compounds starting from liquid metal compounds, e.g. solutions
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F1/00—Metallic powder; Treatment of metallic powder, e.g. to facilitate working or to improve properties
    • B22F1/05—Metallic powder characterised by the size or surface area of the particles
    • B22F1/054—Nanosized particles
    • B22F1/0547—Nanofibres or nanotubes
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F1/00—Metallic powder; Treatment of metallic powder, e.g. to facilitate working or to improve properties
    • B22F1/10—Metallic powder containing lubricating or binding agents; Metallic powder containing organic material
    • B22F1/102—Metallic powder coated with organic material
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F9/00—Making metallic powder or suspensions thereof
    • B22F9/02—Making metallic powder or suspensions thereof using physical processes
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82B—NANOSTRUCTURES FORMED BY MANIPULATION OF INDIVIDUAL ATOMS, MOLECULES, OR LIMITED COLLECTIONS OF ATOMS OR MOLECULES AS DISCRETE UNITS; MANUFACTURE OR TREATMENT THEREOF
    • B82B3/00—Manufacture or treatment of nanostructures by manipulation of individual atoms or molecules, or limited collections of atoms or molecules as discrete units
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/60—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape characterised by shape
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/60—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape characterised by shape
    • C30B29/62—Whiskers or needles
    • D—TEXTILES; PAPER
    • D01—NATURAL OR MAN-MADE THREADS OR FIBRES; SPINNING
    • D01D—MECHANICAL METHODS OR APPARATUS IN THE MANUFACTURE OF ARTIFICIAL FILAMENTS, THREADS, FIBRES, BRISTLES OR RIBBONS
    • D01D5/00—Formation of filaments, threads, or the like
    • D01D5/0007—Electro-spinning
    • D—TEXTILES; PAPER
    • D01—NATURAL OR MAN-MADE THREADS OR FIBRES; SPINNING
    • D01D—MECHANICAL METHODS OR APPARATUS IN THE MANUFACTURE OF ARTIFICIAL FILAMENTS, THREADS, FIBRES, BRISTLES OR RIBBONS
    • D01D5/00—Formation of filaments, threads, or the like
    • D01D5/28—Formation of filaments, threads, or the like while mixing different spinning solutions or melts during the spinning operation; Spinnerette packs therefor
    • D01D5/30—Conjugate filaments; Spinnerette packs therefor
    • D01D5/34—Core-skin structure; Spinnerette packs therefor
    • D—TEXTILES; PAPER
    • D01—NATURAL OR MAN-MADE THREADS OR FIBRES; SPINNING
    • D01F—CHEMICAL FEATURES IN THE MANUFACTURE OF ARTIFICIAL FILAMENTS, THREADS, FIBRES, BRISTLES OR RIBBONS; APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OF CARBON FILAMENTS
    • D01F1/00—General methods for the manufacture of artificial filaments or the like
    • D01F1/02—Addition of substances to the spinning solution or to the melt
    • D01F1/09—Addition of substances to the spinning solution or to the melt for making electroconductive or anti-static filaments
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/244—Electrodes made of transparent conductive layers, e.g. transparent conductive oxide [TCO] layers
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Textile Engineering (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Mechanical Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Manufacturing & Machinery (AREA)
  • Inorganic Chemistry (AREA)
  • Composite Materials (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Powder Metallurgy (AREA)
  • Manufacture Of Metal Powder And Suspensions Thereof (AREA)
  • Inorganic Fibers (AREA)
  • Manufacturing Of Electric Cables (AREA)
CN201310463543.2A 2012-07-30 2013-07-30 高纵横比银纳米线的生产方法 Expired - Fee Related CN103588166B (zh)

Applications Claiming Priority (2)

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US201261677211P 2012-07-30 2012-07-30
US61/677,211 2012-07-30

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CN103588166A CN103588166A (zh) 2014-02-19
CN103588166B true CN103588166B (zh) 2016-06-29

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Country Link
US (1) US9148969B2 (enExample)
JP (1) JP6387221B2 (enExample)
KR (1) KR20140016190A (enExample)
CN (1) CN103588166B (enExample)
DE (1) DE102013012548A1 (enExample)
FR (1) FR2993875B1 (enExample)
TW (1) TWI505995B (enExample)

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US9295153B2 (en) * 2012-11-14 2016-03-22 Rohm And Haas Electronic Materials Llc Method of manufacturing a patterned transparent conductor
EP2991083B1 (en) * 2013-04-26 2021-06-09 Showa Denko K.K. Method for manufacturing electroconductive pattern and electroconductive pattern-formed substrate
US9353460B2 (en) * 2013-09-24 2016-05-31 Xerox Corporation Method for forming metal structures
DE102015013239A1 (de) * 2014-10-28 2016-04-28 Dow Global Technologies Llc Hydrothermalverfahren zur Herstellung von Silber-Nanodrähten
KR101696300B1 (ko) * 2014-12-23 2017-01-16 전자부품연구원 전극 및 그의 제조방법
JP6526739B2 (ja) * 2016-06-02 2019-06-05 Ｄｏｗａエレクトロニクス株式会社 銀ナノワイヤおよびその製造法並びに銀ナノワイヤインクおよび透明導電膜
WO2019124584A1 (ko) * 2017-12-21 2019-06-27 희성전자 주식회사 금속 나노 와이어의 제조방법 및 이에 의해 제조된 금속 나노 와이어
CN114496352A (zh) * 2020-11-12 2022-05-13 天材创新材料科技(厦门)有限公司 纳米银线保护层结构及其制备方法

Citations (5)

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CN101130900A (zh) * 2007-08-03 2008-02-27 东南大学 制备有机聚合物包裹单晶氧化锌共轴复合纳米线的方法
CN102021677A (zh) * 2010-10-13 2011-04-20 清华大学 含过渡金属与氮元素的碳纳米纤维的制备方法及其在燃料电池催化剂中的应用
CN102234846A (zh) * 2010-04-28 2011-11-09 中国科学院化学研究所 具有微米管套纳米线结构的核/壳纤维及其制备方法
CN102352548A (zh) * 2011-07-25 2012-02-15 浙江理工大学 一种静电纺丝制备SiC/C纳米纤维膜的方法
WO2012047042A2 (ko) * 2010-10-07 2012-04-12 포항공과대학교 산학협력단 미세 패턴 형성 방법 및 이를 이용한 미세 채널 트랜지스터 및 미세 채널 발광트랜지스터의 형성방법

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TW200728527A (en) * 2006-01-26 2007-08-01 Singland Biotech Int L Co Ltd A process for the nano-silver fabric through electro spinning filaments
DE102007040762A1 (de) * 2007-08-29 2009-03-05 Bayer Materialscience Ag Vorrichtung und Verfahren zur Herstellung von elektrisch leitenden Nanostrukturen mittels Elektrospinnen
JP5306760B2 (ja) 2008-09-30 2013-10-02 富士フイルム株式会社 透明導電体、タッチパネル、及び太陽電池パネル
CN101580978B (zh) * 2009-06-09 2012-01-11 东华大学 一种海洋生物抗菌纳米纤维及其制备方法
TWI420540B (zh) * 2009-09-14 2013-12-21 Ind Tech Res Inst 藉由光能或熱能成形之導電材料、導電材料之製備方法以及導電組合物
US9040114B2 (en) * 2012-08-29 2015-05-26 Rohm And Haas Electronic Material Llc Method of manufacturing silver miniwire films

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CN101130900A (zh) * 2007-08-03 2008-02-27 东南大学 制备有机聚合物包裹单晶氧化锌共轴复合纳米线的方法
CN102234846A (zh) * 2010-04-28 2011-11-09 中国科学院化学研究所 具有微米管套纳米线结构的核/壳纤维及其制备方法
WO2012047042A2 (ko) * 2010-10-07 2012-04-12 포항공과대학교 산학협력단 미세 패턴 형성 방법 및 이를 이용한 미세 채널 트랜지스터 및 미세 채널 발광트랜지스터의 형성방법
CN102021677A (zh) * 2010-10-13 2011-04-20 清华大学 含过渡金属与氮元素的碳纳米纤维的制备方法及其在燃料电池催化剂中的应用
CN102352548A (zh) * 2011-07-25 2012-02-15 浙江理工大学 一种静电纺丝制备SiC/C纳米纤维膜的方法

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Publication number Publication date
FR2993875A1 (fr) 2014-01-31
DE102013012548A1 (de) 2014-03-06
JP6387221B2 (ja) 2018-09-05
TWI505995B (zh) 2015-11-01
TW201410614A (zh) 2014-03-16
US20140027954A1 (en) 2014-01-30
KR20140016190A (ko) 2014-02-07
FR2993875B1 (fr) 2015-03-13
JP2014053291A (ja) 2014-03-20
CN103588166A (zh) 2014-02-19
US9148969B2 (en) 2015-09-29

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